WO2008078595A1 - 面発光レーザ - Google Patents
面発光レーザ Download PDFInfo
- Publication number
- WO2008078595A1 WO2008078595A1 PCT/JP2007/074275 JP2007074275W WO2008078595A1 WO 2008078595 A1 WO2008078595 A1 WO 2008078595A1 JP 2007074275 W JP2007074275 W JP 2007074275W WO 2008078595 A1 WO2008078595 A1 WO 2008078595A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- reflecting mirror
- bragg reflecting
- resonator unit
- multilayer bragg
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
本発明の面発光レーザは、第1の層113および第1の層113よりも高屈折率の第1の高屈折率層を含む第1の多層膜ブラッグ反射鏡11と、第2の層131および第2の層131よりも高屈折率の第2の高屈折率層を含む第2の多層膜ブラッグ反射鏡13と、これらの多層膜ブラッグ反射鏡に挟まれ、活性層部を含む光共振器部12とを有する。そして、第1の多層膜ブラッグ反射鏡11について光共振器部12に接している層が第1の層113であり、第2の多層膜ブラッグ反射鏡13について光共振器部12に接している層が第2の層131である。共振器部12の実効的な屈折率neffが第1および第2の層113、131よりも大きく、かつ、光共振器部12の光路長neffLが面発光レーザの発振波長λと0.5λ<neffL≦0.7λの関係にある。さらに、光共振器部12と第1の多層膜ブラッグ反射鏡11または第2の多層膜ブラッグ反射鏡13との境界からΔL(=neffL-0.5λ)離れた位置に活性層部121が設けられている。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008551040A JP5212113B2 (ja) | 2006-12-27 | 2007-12-18 | 面発光レーザ |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006352535 | 2006-12-27 | ||
JP2006-352535 | 2006-12-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008078595A1 true WO2008078595A1 (ja) | 2008-07-03 |
Family
ID=39562388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/074275 WO2008078595A1 (ja) | 2006-12-27 | 2007-12-18 | 面発光レーザ |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5212113B2 (ja) |
WO (1) | WO2008078595A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010080571A (ja) * | 2008-09-25 | 2010-04-08 | Nec Corp | 面発光レーザ及びその製造方法 |
US9466945B2 (en) | 2014-10-03 | 2016-10-11 | Fuji Xerox Co., Ltd. | Surface-emitting semiconductor laser device and method for producing the same |
JP2020021883A (ja) * | 2018-08-02 | 2020-02-06 | 株式会社リコー | 発光素子及びその製造方法 |
JP2021036553A (ja) * | 2019-08-30 | 2021-03-04 | 学校法人 名城大学 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04167484A (ja) * | 1990-10-31 | 1992-06-15 | Toshiba Corp | 光半導体装置 |
JP2000174329A (ja) * | 1998-12-03 | 2000-06-23 | Oki Electric Ind Co Ltd | 垂直微小共振器型発光ダイオード |
JP2002204027A (ja) * | 1992-10-15 | 2002-07-19 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法 |
JP2002353568A (ja) * | 2001-05-28 | 2002-12-06 | Hitachi Ltd | 半導体レーザとそれを用いた光モジュール及び光通信システム |
JP2005039102A (ja) * | 2003-07-17 | 2005-02-10 | Yokogawa Electric Corp | 面発光レーザ |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005535141A (ja) * | 2002-07-30 | 2005-11-17 | 独立行政法人科学技術振興機構 | 高屈折率材料内で電界が最大の半波長マイクロポスト・マイクロキャビティ |
US20040213312A1 (en) * | 2003-04-25 | 2004-10-28 | Tan Michael R. | Semiconductor laser having improved high-frequency, large signal response at reduced operating current |
-
2007
- 2007-12-18 WO PCT/JP2007/074275 patent/WO2008078595A1/ja active Application Filing
- 2007-12-18 JP JP2008551040A patent/JP5212113B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04167484A (ja) * | 1990-10-31 | 1992-06-15 | Toshiba Corp | 光半導体装置 |
JP2002204027A (ja) * | 1992-10-15 | 2002-07-19 | Seiko Epson Corp | 面発光型半導体レーザおよびその製造方法 |
JP2000174329A (ja) * | 1998-12-03 | 2000-06-23 | Oki Electric Ind Co Ltd | 垂直微小共振器型発光ダイオード |
JP2002353568A (ja) * | 2001-05-28 | 2002-12-06 | Hitachi Ltd | 半導体レーザとそれを用いた光モジュール及び光通信システム |
JP2005039102A (ja) * | 2003-07-17 | 2005-02-10 | Yokogawa Electric Corp | 面発光レーザ |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010080571A (ja) * | 2008-09-25 | 2010-04-08 | Nec Corp | 面発光レーザ及びその製造方法 |
US9466945B2 (en) | 2014-10-03 | 2016-10-11 | Fuji Xerox Co., Ltd. | Surface-emitting semiconductor laser device and method for producing the same |
JP2020021883A (ja) * | 2018-08-02 | 2020-02-06 | 株式会社リコー | 発光素子及びその製造方法 |
JP7155723B2 (ja) | 2018-08-02 | 2022-10-19 | 株式会社リコー | 発光素子及びその製造方法 |
JP2021036553A (ja) * | 2019-08-30 | 2021-03-04 | 学校法人 名城大学 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
JP7369947B2 (ja) | 2019-08-30 | 2023-10-27 | 学校法人 名城大学 | 窒化物半導体発光素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2008078595A1 (ja) | 2010-04-22 |
JP5212113B2 (ja) | 2013-06-19 |
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