JP2009081406A5 - - Google Patents

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Publication number
JP2009081406A5
JP2009081406A5 JP2007251478A JP2007251478A JP2009081406A5 JP 2009081406 A5 JP2009081406 A5 JP 2009081406A5 JP 2007251478 A JP2007251478 A JP 2007251478A JP 2007251478 A JP2007251478 A JP 2007251478A JP 2009081406 A5 JP2009081406 A5 JP 2009081406A5
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JP
Japan
Prior art keywords
buffer layer
group iii
iii nitride
nitride semiconductor
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007251478A
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English (en)
Japanese (ja)
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JP2009081406A (ja
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Publication date
Application filed filed Critical
Priority to JP2007251478A priority Critical patent/JP2009081406A/ja
Priority claimed from JP2007251478A external-priority patent/JP2009081406A/ja
Priority to CN200880117594A priority patent/CN101874306A/zh
Priority to EP08833533.6A priority patent/EP2200099A4/en
Priority to US12/680,445 priority patent/US20100219445A1/en
Priority to KR1020107006929A priority patent/KR20100049123A/ko
Priority to PCT/JP2008/066261 priority patent/WO2009041256A1/ja
Priority to TW097136316A priority patent/TW200933933A/zh
Publication of JP2009081406A publication Critical patent/JP2009081406A/ja
Publication of JP2009081406A5 publication Critical patent/JP2009081406A5/ja
Pending legal-status Critical Current

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JP2007251478A 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ Pending JP2009081406A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2007251478A JP2009081406A (ja) 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
CN200880117594A CN101874306A (zh) 2007-09-27 2008-09-09 Ⅲ族氮化物半导体发光元件及其制造方法以及灯
EP08833533.6A EP2200099A4 (en) 2007-09-27 2008-09-09 GROUP III NITRID SEMICONDUCTOR LIGHTING ELEMENT, METHOD OF MANUFACTURING THEREOF AND LAMP
US12/680,445 US20100219445A1 (en) 2007-09-27 2008-09-09 Group iii nitride semiconductor light-emitting device, method for manufacturing the same, and lamp
KR1020107006929A KR20100049123A (ko) 2007-09-27 2008-09-09 Ⅲ족 질화물 반도체 발광 소자 및 그 제조 방법, 및 램프
PCT/JP2008/066261 WO2009041256A1 (ja) 2007-09-27 2008-09-09 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
TW097136316A TW200933933A (en) 2007-09-27 2008-09-22 Group III nitride semiconductor light emitting device, method of manufacturing thereof, and lamps using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007251478A JP2009081406A (ja) 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011002985A Division JP2011082570A (ja) 2011-01-11 2011-01-11 Ｉｉｉ族窒化物半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JP2009081406A JP2009081406A (ja) 2009-04-16
JP2009081406A5 true JP2009081406A5 (OSRAM) 2010-05-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007251478A Pending JP2009081406A (ja) 2007-09-27 2007-09-27 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

Country Status (7)

Country Link
US (1) US20100219445A1 (OSRAM)
EP (1) EP2200099A4 (OSRAM)
JP (1) JP2009081406A (OSRAM)
KR (1) KR20100049123A (OSRAM)
CN (1) CN101874306A (OSRAM)
TW (1) TW200933933A (OSRAM)
WO (1) WO2009041256A1 (OSRAM)

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US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
CN105164811B (zh) 2013-02-15 2018-08-31 创世舫电子有限公司 半导体器件的电极及其形成方法
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CN105633233B (zh) * 2015-12-31 2018-01-12 华灿光电(苏州）有限公司 AlN模板、AlN模板的制备方法及AlN模板上的半导体器件
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CN105755536B (zh) * 2016-02-06 2019-04-26 上海新傲科技股份有限公司 一种采用AlON缓冲层的氮化物的外延生长技术
CN105590839B (zh) * 2016-03-22 2018-09-14 安徽三安光电有限公司 氮化物底层、发光二极管及底层制备方法
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