JP2009027194A - 非均一な磁界を有する磁気励起プラズマチャンバ - Google Patents
非均一な磁界を有する磁気励起プラズマチャンバ Download PDFInfo
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Abstract
【解決手段】 磁気励起は、新規な磁界パターンを生成するマグネットによってなされる。ワークピースに平行且つこれに隣接する領域内では、その地点における磁界の方向が、(1)その点における磁界の大きさの勾配と(2)ワークピース面から垂直にプラズマの方へ延びるベクトルとのベクトル外積となるように、瞬間磁界の大きさと方向が関連している。
【選択図】 図1
Description
半導体製造プロセスチャンバは一般に、プラズマを用いて、シリコンウエハ又はその他のワークピース上への半導体デバイス製造のための様々なプロセスの性能を向上させる。このようなプロセスには、スパッタエッチング、プラズマ励起化学エッチング、プラズマ励起化学気相堆積(CVD)やイオン化スパッタ堆積が含まれる。プラズマ中の成分のエネルギーレベルは高いため、これにより製造プロセスの速度が一般に増加し、また、プロセス実行のため半導体ワークピースが維持されるべき温度をしばしば低減する。
本発明を説明する前に、従来の磁気励起プラズマチャンバ中におけるイオン流束(ion flux)の瞬間的な不均一性の理由を説明する。図1は、エッチング又は化学気相堆積(CVD)の何れかに適する磁気励起プラズマチャンバを示す。
我々の発明は、ウエハ面の上で電子がExBドリフトによって電子がそこへ掃引されて入るプラズマプレシースの領域で最も微弱となりExBドリフトによって電子がそこから掃引され出ていく領域で最も強力となる磁界を提供することによってイオン流束の瞬間的な空間的均一性を改善する。更に数学的に述べるならば、我々の発明は、ウエハの平面における点での強度が、ウエハの平面の中のExBベクトルの投射の反対の方向に指向する(即ち、この投射から約180゜の方向を有する)勾配ベクトルで特性が与えられる磁界を提供する(この磁界は、ウエハ表面全体に対してこのような性質を具備する必要はなく、この磁界がウエハ表面の大部分において係る性質を具備するならば、我々の発明の利点は維持される。)。
図2(a)は、2つの隣接した直交コイルを用いて磁界を発生させる本発明の一具体例を示す。2つの同じ環状コイルは、直列に、又は図中に例示されるように並列に接続される。この系列又は並列の結合は、DC電源60に接続される。好ましくは、DC電源60の出力電流は、従来のマイクロコントローラ又はマイクロプロセッサー65により制御され、人間のオペレーターによる磁界強度の調整を容易にする。
ここまで説明した2つのコイルの具体例についての我々の実験では、図2(a)の中で示された特定のコイル幾何学的形状に対して、磁界強度の空間的変化に起因する電子密度の差がExBドリフトに起因する差を上回ることを示す。従って、イオン流束の空間的均一性が従来の磁気励起のプラズマチャンバの上に大きく改善される一方、点Pの近隣のイオン流束は点Qの近隣のイオン流束より大きくなる。
我々は、第1のコイル対を流れる電流と第2のコイル対(第1のコイルと同じ)を流れる電流の比Rの異なるプラズマエッチングプロセスに対し、直径200mmのシリコンウエハ上の酸化シリコン層のエッチングについて空間的均一性を測定した。各ケースにおいて、プロセスガス混合物は、CHF3が45sccm、CF4が15sccm、Arが150sccmから成っていた。このチャンバは、図1に示されたと同様の容量結合のデザインであり、また、そして、カソード22とアノード18の間に接続されるRF電源24は、13.56MHzの周波数で1000ワットのRF動力を供給するよう調節された。干渉計(interferometer)により、ウエハ表面の上に一様に分布する225点における酸化物層の厚さを測定した。我々は、225個の厚さ測定値の標準偏差(1シグマ)と、最大厚さ及び最小厚さと平均厚さとの間の差とに基づき、瞬間的なエッチング速度の空間的均一性を判断した。
図2及び図3のそれぞれにおいて示される本発明の具体例では、磁界強度が最大の点Pに対して反時計回りの曲線を有している磁界パターンを採用する。図5で示されるまた別の具体例では、ウエハ20の表面の近くの磁界パターン(ウエハの上から見た場合が、磁界曲線56a〜56dによって表現される)は、磁界強度が最小の点Qに対して時計回りの曲線を有している。ここで数学的には、ウエハ表面の真上における磁界のベクトル「カール(curl)」関数(▽xB)は、ウエハの真上のプラズマ本体の方向からウエハに向けて下向きである。
図6は、本発明のもう一つの具体例を例示し、ここでは、ウエハ20の表面上方の磁界は曲線ではなく直線的である。より具体的には、ウエハ表面(の上の全ての点の上方では、磁界線はx‐軸方向に指向しており、即ち方位角方向が0゜である。従って、磁界曲線58a〜58dは、x‐軸に平行である。
上述の本発明の代替的なあらゆる態様においては、ワークピースに対して行われるプラズマ励起製造プロセスの半径方向の均一性を長期的な時平均につき改善する目的で、ワークピースに対して磁界を低速で回転させてもよい。例えば、エッチングプロセスでは、回転はバイア及びその他のステップ状の表面形状におけるエッチング速度、エッチング選択性とエッチングプロファイルの長期的な時平均の均一性を改善する。ワークピースと磁界の間の相対的な回転は、先行技術においては、半導体製造のための磁気励起プラズマシステムに従来から用いられている。
反時計回りの曲線(図2〜4)を有しているマグネット電界を用いる前述の本発明の具体例において、ウエハを囲んでいる狭い区域を提供しそこを介してRF電力をカソード電極22からプラズマに結合するようにすることによって、プラズマからのイオン流束のうちウエハ20表面上の空間的均一性が、更に改善されることができることを見出した。
最も広い意味では、本発明は、ウエハの表面上方の磁界の方向と勾配によって画定され、そしてそれは、この磁界を生成するマグネットの数にも配列にも限定されない。例えば、例示された好ましい具体例で用いられる電磁石に変えて永久磁石を用いることが可能である。また、異なる数の永久磁石又は電磁石を用いて、本発明の方向及び勾配を有している磁界発生することができる。
Claims (6)
- 半導体ワークピースを処理するための磁気励起プラズマチャンバであって、
ワークピース支持領域でワークピースを保持するためのワークピース支持体と、
該ワークピース支持領域の周縁の周りに間隔をおいて配置される複数の電磁石と、
該電磁石が共働して経時的に回転する磁界を発生するよう、連続する時間インターバルに対して決まった電流値の電流信号を連続して各電磁石に与えるための、電源と
を備え、
前記時間インターバルのそれぞれは、各電磁石に与えられる電流の値を該電源が変化させる遷移時間によって隔てられ、
各遷移時間の間、磁極が変化せず大きさが変化する電流変化が電源により与えられる電磁石に対して、該遷移時間の短い部分の間、該電源が前記電流変化を与え、
各遷移時間の間、磁極の変化を含む電流変化が電源により与えられる電磁石に対して、該遷移時間の長い部分の間、該電源が前記電流変化を与え、
それぞれの遷移時間の該長い部分が、それぞれの遷移時間の該短い部分よりも長い磁気励起プラズマチャンバ。 - それぞれの遷移時間の該長い部分が、それぞれの遷移時間全体と等しく、
それぞれの遷移時間の該短い部分が、それぞれの遷移時間の半分に等しい請求項1に記載の磁気励起プラズマチャンバ。 - 各遷移時間の間、磁極が変化せず大きさが増加する電流変化が電源により与えられる電磁石に対して、該遷移時間の最初のセグメントの間、該電源が前記電流変化を与え、
各遷移時間の間、磁極が変化せず大きさが減少する電流変化が電源により与えられる電磁石に対して、該遷移時間の最後のセグメントの間、該電源が前記電流変化を与える請求項1に記載の磁気励起プラズマチャンバ。 - 半導体ワークピースへのプラズマプロセスを磁気励起する方法であって、
周縁で仕切られるワークピース支持領域で半導体ワークピースを保持するステップと、
該ワークピース支持領域の周縁の周りに複数の電磁石を間隔をおいて配置するステップと、
該電磁石が共働して経時的に回転する磁界を発生するよう、連続する時間インターバルに対して決まった連続する電流値の電流信号を各電磁石に供給する供給のステップであって、前記時間インターバルのそれぞれは、各電磁石に与えられる電流の値が変化する遷移時間によって隔てられ、前記供給のステップが、
各遷移時間の間、磁極が変化せず大きさが変化する電流変化が与えられる電磁石に対して、該遷移時間の短い部分の間、前記電流変化が与えられ、
各遷移時間の間、磁極の変化を含む電流変化が与えられる電磁石に対して、該遷移時間の長い部分の間、前記電流変化が与えられ、
それぞれの遷移時間の該長い部分が、それぞれの遷移時間の該短い部分よりも長い
前記供給のステップと
を有する方法。 - それぞれの遷移時間の該長い部分が、それぞれの遷移時間全体と等しく、
それぞれの遷移時間の該短い部分が、それぞれの遷移時間の半分に等しい請求項4に記載の方法。 - 各遷移時間の間、磁極が変化せず大きさが増加する電流変化が与えられる電磁石に対して、該遷移時間の最初のセグメントの間、前記電流変化を与える工程と、
各遷移時間の間、磁極が変化せず大きさが減少する電流変化が与えられる電磁石に対して、該遷移時間の最後のセグメントの間、前記電流変化を与える工程と
を更に有する請求項4に記載の方法。
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US (1) | US6113731A (ja) |
EP (1) | EP0852389A3 (ja) |
JP (2) | JP4387471B2 (ja) |
KR (1) | KR100564087B1 (ja) |
TW (1) | TW439110B (ja) |
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Also Published As
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KR100564087B1 (ko) | 2006-11-10 |
TW439110B (en) | 2001-06-07 |
US6113731A (en) | 2000-09-05 |
JPH10233390A (ja) | 1998-09-02 |
KR19980070306A (ko) | 1998-10-26 |
EP0852389A2 (en) | 1998-07-08 |
JP4387471B2 (ja) | 2009-12-16 |
JP4932811B2 (ja) | 2012-05-16 |
EP0852389A3 (en) | 2002-01-02 |
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