JP2009026968A - 半導体レーザの制御方法 - Google Patents
半導体レーザの制御方法 Download PDFInfo
- Publication number
- JP2009026968A JP2009026968A JP2007188880A JP2007188880A JP2009026968A JP 2009026968 A JP2009026968 A JP 2009026968A JP 2007188880 A JP2007188880 A JP 2007188880A JP 2007188880 A JP2007188880 A JP 2007188880A JP 2009026968 A JP2009026968 A JP 2009026968A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- semiconductor laser
- wavelength
- region
- sequence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 35
- 230000003287 optical effect Effects 0.000 claims abstract description 48
- 238000001514 detection method Methods 0.000 claims abstract description 34
- 230000010355 oscillation Effects 0.000 claims abstract description 28
- 230000033228 biological regulation Effects 0.000 claims description 11
- 230000020169 heat generation Effects 0.000 claims description 10
- 238000012937 correction Methods 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims 1
- 238000001228 spectrum Methods 0.000 description 14
- 230000006866 deterioration Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】 半導体レーザ(10)の制御方法は、ヒータ(14)によって屈折率が制御される波長選択部(11)を有する半導体レーザの制御方法であって、ヒータの発熱量が規定値に到達するまで発熱量を調整する第1ステップを含む起動シーケンスと、起動シーケンスの完了後、半導体レーザの発振波長の検出結果に基づいて半導体レーザの波長を補正する第2ステップを含む波長制御シーケンスと、を含む。
【選択図】 図4
Description
11 SG−DBR領域
12 SG−DFB領域
13 SOA領域
14 ヒータ
15,16 電極
20 温度制御装置
30 波長検知部
40 出力検知部
50 コントローラ
100 レーザ装置
Claims (10)
- ヒータによって屈折率が制御される波長選択部を有する半導体レーザの制御方法であって、
前記ヒータの発熱量が規定値に到達するまで前記発熱量を調整する第1ステップを含む起動シーケンスと、
前記起動シーケンスの完了後、前記半導体レーザの発振波長の検出結果に基づいて、前記半導体レーザの波長を補正する第2ステップを含む波長制御シーケンスと、を含むことを特徴とする半導体レーザの制御方法。 - 前記第1ステップにおける前記ヒータの発熱量の調整は、前記ヒータに投入される電力を調整することによって実施されることを特徴とする請求項1記載の半導体レーザの制御方法。
- 前記第1ステップは、前記ヒータの両端の電圧と前記ヒータに投入される電流とにより得られる電力が規定値を満たすまで、前記ヒータに投入される電流値を調整することによって実施されることを特徴とする請求項1記載の半導体レーザの制御方法。
- 前記第1ステップは、前記ヒータ近傍に配置された温度検出手段の出力が規定値を満たすまで、前記ヒータに投入される電力を調整することによって実施されることを特徴とする請求項1記載の半導体レーザの制御方法。
- 前記波長制御シーケンスは、前記ヒータの発熱量を規定値に維持するための補正を実施する第3ステップを含むことを特徴とする請求項1記載の半導体レーザの制御方法。
- 前記半導体レーザは、発振波長の測定結果に基づいて、前記半導体レーザのパラメータを規定値に補正する波長ロッカ部を備えることを特徴とする請求項1記載の半導体レーザの制御方法。
- 前記半導体レーザは、回折格子を備える活性領域と、前記活性領域と光結合し回折格子を備え前記ヒータによって等価屈折率が変化する光導波路部と、を備えることを特徴とする請求項1記載の半導体レーザの制御方法。
- 前記活性領域および前記光導波路部における回折格子は、回折格子を有する第1の領域と、前記第1の領域に連結されかつスペース部となる第2の領域と、を備えることを特徴とする請求項7記載の半導体レーザの制御方法。
- 前記半導体レーザは、活性領域と、前記活性領域の両側にそれぞれ光結合して設けられ少なくとも一方には前記ヒータが設けられて等価屈折率が変化する1対の光導波路部と、を備えることを特徴とする請求項1記載の半導体レーザの制御方法。
- 外部への光出力を抑制した状態で前記起動シーケンスおよび前記波長制御シーケンスを実行するダークチューニングシーケンスと、
前記ダークチューニングシーケンスで選択された波長を保持しつつ、外部へ光を出力する光出力シーケンスと、を含むことを特徴とする請求項1記載の半導体レーザの制御方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007188880A JP5303124B2 (ja) | 2007-07-19 | 2007-07-19 | 半導体レーザ装置の制御方法 |
CN200810133955.9A CN101350497B (zh) | 2007-07-19 | 2008-07-18 | 半导体激光器的控制方法 |
US12/175,619 US20090022185A1 (en) | 2007-07-19 | 2008-07-18 | Method of controlling semiconductor laser |
EP08104799.5A EP2017927B1 (en) | 2007-07-19 | 2008-07-18 | Method of controlling semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007188880A JP5303124B2 (ja) | 2007-07-19 | 2007-07-19 | 半導体レーザ装置の制御方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012113807A Division JP2012156558A (ja) | 2012-05-17 | 2012-05-17 | 半導体レーザ装置の制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009026968A true JP2009026968A (ja) | 2009-02-05 |
JP5303124B2 JP5303124B2 (ja) | 2013-10-02 |
Family
ID=39832306
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007188880A Active JP5303124B2 (ja) | 2007-07-19 | 2007-07-19 | 半導体レーザ装置の制御方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090022185A1 (ja) |
EP (1) | EP2017927B1 (ja) |
JP (1) | JP5303124B2 (ja) |
CN (1) | CN101350497B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003748A (ja) * | 2009-06-19 | 2011-01-06 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
JP2020004808A (ja) * | 2018-06-27 | 2020-01-09 | 住友電工デバイス・イノベーション株式会社 | 波長可変レーザ装置の制御方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8699533B1 (en) * | 2009-02-23 | 2014-04-15 | Cirrex Systems, Llc | Method and system for managing thermally sensitive optical devices |
JP2011142584A (ja) * | 2010-01-08 | 2011-07-21 | Fujitsu Optical Components Ltd | 光伝送装置 |
US8976824B2 (en) * | 2012-02-09 | 2015-03-10 | Finisar Corporation | Heat-swap device and method |
US20140135601A1 (en) * | 2012-11-09 | 2014-05-15 | Kestrel Labs, Inc. | User replaceable optical subsystem for laser-based photoplethysmography |
CN104061446B (zh) * | 2013-03-21 | 2018-04-03 | 优志旺电机株式会社 | 激光光源装置 |
CN103297147A (zh) * | 2013-05-21 | 2013-09-11 | 武汉奥新科技有限公司 | Sg-dbr可调谐激光器模块及其控制方法 |
JP6229474B2 (ja) * | 2013-12-13 | 2017-11-15 | 富士通株式会社 | 半導体レーザ装置、光アンプおよび判定方法 |
JP6687663B2 (ja) * | 2018-04-12 | 2020-04-28 | ファナック株式会社 | 筐体の内部の熱を外部に放出する熱移動装置を備えるレーザ装置 |
KR102683598B1 (ko) * | 2019-02-01 | 2024-07-10 | 주식회사 포벨 | 광소자 제어방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003149610A (ja) * | 2001-11-12 | 2003-05-21 | Hitachi Cable Ltd | 導波路型光可変減衰器 |
JP2006245346A (ja) * | 2005-03-03 | 2006-09-14 | Nec Corp | 波長可変共振器、波長可変レーザ、光モジュール及びそれらの制御方法 |
JP2007048988A (ja) * | 2005-08-11 | 2007-02-22 | Eudyna Devices Inc | 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法 |
JP2007109765A (ja) * | 2005-10-12 | 2007-04-26 | Opnext Japan Inc | 波長可変光送信器および光送受信器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0632332B2 (ja) * | 1984-08-24 | 1994-04-27 | 日本電気株式会社 | 半導体レ−ザ装置 |
FR2636177B1 (fr) * | 1988-09-08 | 1990-11-16 | Comp Generale Electricite | Source laser a semi-conducteur modulee a frequence elevee |
JP2914248B2 (ja) | 1995-09-23 | 1999-06-28 | 日本電気株式会社 | 波長可変半導体レーザ素子 |
EP0774684A3 (en) * | 1995-11-16 | 1998-04-22 | Matsushita Electric Industrial Co., Ltd. | Optical apparatus and method for producing the same |
DE19755453A1 (de) | 1997-12-01 | 1999-07-01 | Deutsche Telekom Ag | Verfahren zur Wellenlängenabstimmung einer optoelektronischen Bauelemente-Anordnung |
US6597712B2 (en) * | 2001-02-26 | 2003-07-22 | Hitachi, Ltd. | Laser diode module |
US20040174915A1 (en) * | 2002-09-18 | 2004-09-09 | Adc Telecommunications, Inc. | Method for characterizing tunable lasers |
US20040190580A1 (en) * | 2003-03-04 | 2004-09-30 | Bardia Pezeshki | High-yield high-precision distributed feedback laser based on an array |
KR100541913B1 (ko) * | 2003-05-02 | 2006-01-10 | 한국전자통신연구원 | 추출 격자 브래그 반사기와 결합된 추출 격자 분포궤환파장가변 반도체 레이저 |
WO2005083854A1 (ja) * | 2004-02-27 | 2005-09-09 | Matsushita Electric Industrial Co., Ltd. | コヒーレント光源およびその制御方法、並びにそれらを用いたディスプレイ装置およびレーザディスプレイ |
JP4693364B2 (ja) * | 2004-05-12 | 2011-06-01 | キヤノン株式会社 | 光波長変換装置、その制御方法、およびそれを用いた画像投影装置 |
JP4629022B2 (ja) * | 2005-12-27 | 2011-02-09 | 住友電工デバイス・イノベーション株式会社 | レーザ装置、レーザモジュール、および、半導体レーザ |
US20080063016A1 (en) * | 2006-09-13 | 2008-03-13 | Vikram Bhatia | Thermal compensation in semiconductor lasers |
US7480317B2 (en) * | 2006-09-26 | 2009-01-20 | Corning Incorporated | Thermal compensation in semiconductor lasers |
-
2007
- 2007-07-19 JP JP2007188880A patent/JP5303124B2/ja active Active
-
2008
- 2008-07-18 CN CN200810133955.9A patent/CN101350497B/zh active Active
- 2008-07-18 EP EP08104799.5A patent/EP2017927B1/en active Active
- 2008-07-18 US US12/175,619 patent/US20090022185A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003149610A (ja) * | 2001-11-12 | 2003-05-21 | Hitachi Cable Ltd | 導波路型光可変減衰器 |
JP2006245346A (ja) * | 2005-03-03 | 2006-09-14 | Nec Corp | 波長可変共振器、波長可変レーザ、光モジュール及びそれらの制御方法 |
JP2007048988A (ja) * | 2005-08-11 | 2007-02-22 | Eudyna Devices Inc | 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法 |
JP2007109765A (ja) * | 2005-10-12 | 2007-04-26 | Opnext Japan Inc | 波長可変光送信器および光送受信器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011003748A (ja) * | 2009-06-19 | 2011-01-06 | Fuji Xerox Co Ltd | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
JP2020004808A (ja) * | 2018-06-27 | 2020-01-09 | 住友電工デバイス・イノベーション株式会社 | 波長可変レーザ装置の制御方法 |
JP7088609B2 (ja) | 2018-06-27 | 2022-06-21 | 住友電工デバイス・イノベーション株式会社 | 波長可変レーザ装置の制御方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090022185A1 (en) | 2009-01-22 |
EP2017927A3 (en) | 2009-10-28 |
EP2017927A2 (en) | 2009-01-21 |
EP2017927B1 (en) | 2019-02-13 |
JP5303124B2 (ja) | 2013-10-02 |
CN101350497B (zh) | 2014-04-02 |
CN101350497A (zh) | 2009-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5303124B2 (ja) | 半導体レーザ装置の制御方法 | |
JP4943255B2 (ja) | 半導体レーザの制御方法 | |
US9728937B2 (en) | Method of controlling wavelength tunable laser, control data structure of wavelength tunable laser, and wavelength tunable laser | |
JP5154581B2 (ja) | レーザ装置およびレーザ装置の制御データ | |
JP5457873B2 (ja) | 波長可変レーザの制御方法 | |
US7929581B2 (en) | Testing method of wavelength-tunable laser, controlling method of wavelength-tunable laser and laser device | |
JP5008831B2 (ja) | レーザ装置、レーザ装置の制御装置、レーザ装置の制御方法、レーザ装置の波長切換方法およびレーザ装置の制御データ | |
JP2009044024A (ja) | 半導体レーザ装置、および半導体レーザの制御方法 | |
JP6308456B2 (ja) | 波長可変レーザの制御方法 | |
JP6951983B2 (ja) | 波長可変レーザ装置、及び波長可変レーザ装置の波長制御方法 | |
JP2009177140A (ja) | 波長可変レーザの試験方法、波長可変レーザの制御方法およびレーザ装置 | |
US9742149B2 (en) | Method for controlling tunable wavelength laser | |
US9042415B2 (en) | Method to tune emission wavelength of semiconductor laser diode | |
US8681826B2 (en) | Method for tuning semiconductor laser | |
US9819148B2 (en) | Method for controlling tunable wavelength laser | |
JP2009044141A (ja) | 光学デバイスおよびその制御方法 | |
JP6256745B2 (ja) | 波長可変レーザの制御方法 | |
JP6998903B2 (ja) | 波長可変光源装置および波長可変光源装置の制御方法 | |
JP2012156558A (ja) | 半導体レーザ装置の制御方法 | |
JP2019161065A (ja) | 波長可変レーザ装置、及び波長可変レーザ装置の波長制御方法 | |
JP2011009772A (ja) | 固体レーザ装置の適正温度測定方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100611 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111005 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111011 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111206 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120517 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120525 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20120720 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130524 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130624 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5303124 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |