JP2009026382A5 - - Google Patents

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Publication number
JP2009026382A5
JP2009026382A5 JP2007188328A JP2007188328A JP2009026382A5 JP 2009026382 A5 JP2009026382 A5 JP 2009026382A5 JP 2007188328 A JP2007188328 A JP 2007188328A JP 2007188328 A JP2007188328 A JP 2007188328A JP 2009026382 A5 JP2009026382 A5 JP 2009026382A5
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JP
Japan
Prior art keywords
memory device
semiconductor memory
line driver
bit line
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007188328A
Other languages
English (en)
Japanese (ja)
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JP2009026382A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007188328A priority Critical patent/JP2009026382A/ja
Priority claimed from JP2007188328A external-priority patent/JP2009026382A/ja
Priority to TW097123709A priority patent/TW200917246A/zh
Priority to KR1020080067061A priority patent/KR100944058B1/ko
Priority to US12/172,198 priority patent/US7835171B2/en
Publication of JP2009026382A publication Critical patent/JP2009026382A/ja
Publication of JP2009026382A5 publication Critical patent/JP2009026382A5/ja
Priority to US12/916,499 priority patent/US20110044092A1/en
Withdrawn legal-status Critical Current

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JP2007188328A 2007-07-19 2007-07-19 半導体記憶装置 Withdrawn JP2009026382A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007188328A JP2009026382A (ja) 2007-07-19 2007-07-19 半導体記憶装置
TW097123709A TW200917246A (en) 2007-07-19 2008-06-25 Semiconductor memory device
KR1020080067061A KR100944058B1 (ko) 2007-07-19 2008-07-10 반도체 기억 장치
US12/172,198 US7835171B2 (en) 2007-07-19 2008-07-11 Semiconductor memory device
US12/916,499 US20110044092A1 (en) 2007-07-19 2010-10-30 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007188328A JP2009026382A (ja) 2007-07-19 2007-07-19 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2009026382A JP2009026382A (ja) 2009-02-05
JP2009026382A5 true JP2009026382A5 (cg-RX-API-DMAC7.html) 2010-04-30

Family

ID=40398066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007188328A Withdrawn JP2009026382A (ja) 2007-07-19 2007-07-19 半導体記憶装置

Country Status (4)

Country Link
US (2) US7835171B2 (cg-RX-API-DMAC7.html)
JP (1) JP2009026382A (cg-RX-API-DMAC7.html)
KR (1) KR100944058B1 (cg-RX-API-DMAC7.html)
TW (1) TW200917246A (cg-RX-API-DMAC7.html)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009026382A (ja) * 2007-07-19 2009-02-05 Hitachi Ltd 半導体記憶装置
JP5212378B2 (ja) * 2007-11-21 2013-06-19 日本電気株式会社 半導体装置のコンフィギュレーション方法
JP5161697B2 (ja) * 2008-08-08 2013-03-13 株式会社東芝 不揮発性半導体記憶装置
US8837251B2 (en) * 2008-10-06 2014-09-16 Hitachi, Ltd. Semiconductor device with low voltage programming/erasing operation
IT1392578B1 (it) * 2008-12-30 2012-03-09 St Microelectronics Rousset Metodo di programmazione multilivello di celle di memoria a cambiamento di fase utilizzante impulsi di reset adattativi
US8270199B2 (en) * 2009-04-03 2012-09-18 Sandisk 3D Llc Cross point non-volatile memory cell
WO2010125852A1 (ja) * 2009-04-27 2010-11-04 株式会社日立製作所 半導体装置
WO2011045886A1 (ja) * 2009-10-15 2011-04-21 パナソニック株式会社 抵抗変化型不揮発性記憶装置
JP5621784B2 (ja) * 2009-12-08 2014-11-12 日本電気株式会社 電気化学反応を利用した抵抗変化素子の製造方法
JP2011253595A (ja) * 2010-06-03 2011-12-15 Toshiba Corp 不揮発性半導体記憶装置
JP2011258288A (ja) * 2010-06-10 2011-12-22 Toshiba Corp 半導体記憶装置
US8274812B2 (en) * 2010-06-14 2012-09-25 Crossbar, Inc. Write and erase scheme for resistive memory device
JP5521850B2 (ja) * 2010-07-21 2014-06-18 ソニー株式会社 抵抗変化型メモリデバイスおよびその駆動方法
US8259485B2 (en) * 2010-08-31 2012-09-04 Hewlett-Packard Development Company, L.P. Multilayer structures having memory elements with varied resistance of switching layers
JP5626529B2 (ja) * 2011-02-08 2014-11-19 ソニー株式会社 記憶装置およびその動作方法
US9153319B2 (en) 2011-03-14 2015-10-06 Panasonic Intellectual Property Management Co., Ltd. Method for driving nonvolatile memory element, and nonvolatile memory device having a variable resistance element
JP5694053B2 (ja) * 2011-05-26 2015-04-01 株式会社東芝 半導体記憶装置
US8619471B2 (en) 2011-07-27 2013-12-31 Micron Technology, Inc. Apparatuses and methods including memory array data line selection
CN103177761A (zh) * 2011-12-23 2013-06-26 北京大学 阻变存储设备及其操作方法
US9275731B1 (en) * 2012-10-05 2016-03-01 Marvell International Ltd. Systems and methods for increasing the read sensitivity of a resistive random access memory (RRAM)
US9047945B2 (en) 2012-10-15 2015-06-02 Marvell World Trade Ltd. Systems and methods for reading resistive random access memory (RRAM) cells
US9042159B2 (en) 2012-10-15 2015-05-26 Marvell World Trade Ltd. Configuring resistive random access memory (RRAM) array for write operations
US8885388B2 (en) * 2012-10-24 2014-11-11 Marvell World Trade Ltd. Apparatus and method for reforming resistive memory cells
US9142284B2 (en) 2012-11-12 2015-09-22 Marvell World Trade Ltd. Concurrent use of SRAM cells with both NMOS and PMOS pass gates in a memory system
US9042162B2 (en) 2012-10-31 2015-05-26 Marvell World Trade Ltd. SRAM cells suitable for Fin field-effect transistor (FinFET) process
AT514477B1 (de) * 2013-07-05 2015-03-15 Nano Tecct Weiz Forschungsgmbh Speicher-Sensoranordnung mit einem Sensorelement und einem Speicher
US9928906B2 (en) * 2014-03-24 2018-03-27 Tohoku University Data-write device for resistance-change memory element
JP6372203B2 (ja) 2014-07-07 2018-08-15 株式会社ソシオネクスト データ保持回路および保持データ復元方法
JP6628053B2 (ja) * 2015-03-27 2020-01-08 パナソニックＩｐマネジメント株式会社 半導体記憶装置の書き換え方法
KR102401581B1 (ko) * 2015-10-26 2022-05-24 삼성전자주식회사 저항식 메모리 소자
KR102770122B1 (ko) 2016-10-24 2025-02-21 에스케이하이닉스 주식회사 전자 장치
KR102803096B1 (ko) 2016-10-28 2025-05-07 에스케이하이닉스 주식회사 전자 장치
WO2020000231A1 (zh) * 2018-06-27 2020-01-02 江苏时代全芯存储科技股份有限公司 记忆体驱动装置
JP2020205003A (ja) * 2019-06-19 2020-12-24 キオクシア株式会社 メモリシステム、メモリコントローラ、及び半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000076873A (ja) 1998-08-26 2000-03-14 Oki Micro Design:Kk メモリセルのしきい値電圧制御方法及び半導体記憶装置
JP4907011B2 (ja) 2001-04-27 2012-03-28 株式会社半導体エネルギー研究所 不揮発性メモリとその駆動方法、及び半導体装置
US7184301B2 (en) * 2002-11-27 2007-02-27 Nec Corporation Magnetic memory cell and magnetic random access memory using the same
JP4249992B2 (ja) 2002-12-04 2009-04-08 シャープ株式会社 半導体記憶装置及びメモリセルの書き込み並びに消去方法
JP4804133B2 (ja) * 2005-12-06 2011-11-02 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2009026382A (ja) * 2007-07-19 2009-02-05 Hitachi Ltd 半導体記憶装置

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