JP2009021441A - 電子装置 - Google Patents
電子装置 Download PDFInfo
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- JP2009021441A JP2009021441A JP2007183563A JP2007183563A JP2009021441A JP 2009021441 A JP2009021441 A JP 2009021441A JP 2007183563 A JP2007183563 A JP 2007183563A JP 2007183563 A JP2007183563 A JP 2007183563A JP 2009021441 A JP2009021441 A JP 2009021441A
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- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 238000003860 storage Methods 0.000 claims abstract description 16
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 230000015654 memory Effects 0.000 claims description 25
- 230000014759 maintenance of location Effects 0.000 claims description 5
- 230000032683 aging Effects 0.000 description 47
- 238000000034 method Methods 0.000 description 16
- 230000006870 function Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
【解決手段】基板と、前記基板に搭載され、第1と第2の端子を有し所定の寿命で前記第1と第2の端子の間のアクセスが切断される半導体時限スイッチが形成された第1のチップと、前記基板に搭載され、前記第1の端子に接続された第3の端子と外部との入出力端子である第4と第5の端子とを有する演算装置を内蔵する第2のチップと、前記基板に搭載され、前記前記第2の端子に接続される第6の端子を有し、前記演算装置を動作させる為に必要な情報を記録した第1の記憶装置と、少なくとも前記第1のチップの表面を被覆する封止手段とを有し、前記第1のチップは、前記封止手段により封止された部分に、前記所定の寿命を設定するための入力パッドを具備することを特徴とする。
【選択図】 図1
Description
図9の機能すべてにおいて、同じ型の比較的近い寿命を持つセルの集団を並列接続することによって、寿命の制御性を挙げることが出来る。図18はその一例としての接続図である。直列に接続したセルを更に並列に接続しても良い。直列及び並列の組み合わせには種々のバリエーションが考えられ、いずれも寿命の制御性に効果を挙げ得る。
図1は、本発明の第1の実施形態に係る電子装置の模式的な平面図、図2は図1のA−A´線に沿った断面図である。樹脂やセラミック等から形成された基板1上に、読み出し専用メモリ(ROM)3、時限スイッチとしてのエージングデバイス5、演算装置(MPU)7が搭載されている。エージングデバイス5には、第1の端子10と第2の端子11が備えられており、入力パッド17を通じて設定された所定の時間が無電源で経過した後、第1の端子と第2の端子の間が切断されるようになっている。
図3は、第2の実施形態に係る電子装置の摸式的平面図、図4は図3のA−A´線に沿った断面図である。第1の実施形態と同一箇所には同一番号を付して、重複する説明を省略する。
図5は、第3の実施形態に係る電子装置の摸式的平面図、図6は図5のA−A´線に沿った断面図である。第1及び第2の実施形態と同一箇所には同一番号を付して、重複する説明を省略する。
図7は、第4の実施形態に係る電子装置の摸式的平面図、図8は図7のA−A´線に沿った断面図である。第1乃至第3の実施形態と同一箇所には同一番号を付して、重複する説明を省略する。
3、25…読み出し専用メモリ
5…エージングデバイス(SSAD)
7…MPU
9〜13,27,29…接続端子(パッド)
15…(MPUの)出力手段
17…寿命書き込みパッド
19…樹脂キャップ
19´…キャップ
21,23、31…接続手段(ワイヤ)
Claims (10)
- 基板と、
前記基板に搭載され、第1と第2の端子を有し所定の寿命で前記第1と第2の端子の間のアクセスが切断される半導体時限スイッチが形成された第1のチップと、
前記基板に搭載され、前記第1の端子に接続された第3の端子と外部との入出力端子である第4と第5の端子とを有する演算装置を内蔵する第2のチップと、
前記基板に搭載され、前記前記第2の端子に接続される第6の端子を有し、前記演算装置を動作させる為に必要な情報を記録した第1の記憶装置と、
少なくとも前記第1のチップの表面を被覆する封止手段と、
を有し、前記第1のチップは、前記封止手段により封止された部分に、前記所定の寿命を設定するための入力パッドを具備することを特徴とする電子装置。 - 前記第2のチップの前記第5の端子に接続する第7の端子を有する第2の記憶装置をさらに具備し、前記情報は第1の暗号化されたシリアル番号であり、前記第2の記憶装置は第2の暗号化されたシリアル番号を記録したことを特徴とする請求項1に記載の電子装置。
- 基板と、
前記基板に搭載され、第1と第2の端子を有し、所定の寿命で前記第1と第2の端子の間のアクセスが切断される半導体時限スイッチと、前記第1の端子に接続された第3の端子と外部へ信号を発する第4の端子とを有する演算装置を内蔵する半導体チップと、
前記基板に搭載され、前記第2の端子に接続される第5の端子を有し、前記演算装置を動作させる為に必要な情報を記録した記憶装置と、
少なくとも前記第1のチップの表面を被覆する封止手段と、
を有し、前記半導体チップは、前記封止手段により封止された部分に、前記所定の寿命を設定するための入力パッドを具備することを特徴とする電子装置。
子装置。 - 基板と、
前記基板に搭載され、第1と第2の端子を有して所定の寿命で前記第1と第2の端子の間のアクセスが切断される半導体時限スイッチと、前記第1の端子に接続し第1の暗号化されたシリアル番号を記録した第1の記憶装置とが形成された第1のチップと、
前記基板に搭載され、前記第1の端子に接続された第3の端子と外部へ信号を発する第4の端子とを有する演算装置を内蔵する第2のチップと、
前記基板に搭載され、前記第2の端子に接続される第5の端子を有し前記演算装置を動作させる為に第2の暗号化されたシリアル番号を記録した第2の記憶装置と、
少なくとも前記第1のチップの表面を被覆する封止手段と、
を有し、前記第1のチップは、前記封止手段により封止された部分に、前記所定の寿命を設定するための入力パッドを具備することを特徴とする電子装置。 - 前記情報を記録した第1及び第2の記憶装置が、読み出し専用メモリであることを特徴とする請求項1乃至4のいずれかに記載の電子装置。
- 前記情報を記録した第1及び第2の記憶装置が、半導体メモリチップであることを特徴とする請求項1乃至4のいずれかに記載の電子装置。
- 前記半導体メモリチップの電荷保持寿命が、前記半導体時限スイッチの電荷保持寿命より長いことを特徴とする請求項6に記載の電子装置。
- 前記情報を記録した第1及び第2の記憶装置が、磁気記録装置であることを特徴とする請求項1乃至4のいずれかに記載の電子装置。
- 前記半導体時限スイッチは浮遊ゲートを有するセルトランジスタを含み、前記浮遊ゲートを取り囲む絶縁膜の最も薄い部分が10nm以上であることを特徴とする請求項乃至4のいずれかに記載の電子装置。
- 前記半導体時限スイッチは電荷蓄積層を有するセルトランジスタを含み、前記電荷蓄積層を取り囲む絶縁膜の最も薄い部分が7nm以上であることを特徴とする請求項乃至4のいずれかに記載の電子装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007183563A JP4469877B2 (ja) | 2007-07-12 | 2007-07-12 | 電子装置 |
US12/049,715 US8253255B2 (en) | 2007-07-12 | 2008-03-17 | Electronic device which disconnects first and second terminals upon lapse of a prescribed device lifetime |
EP20080152897 EP2015216A1 (en) | 2007-07-12 | 2008-03-18 | Electronic device |
KR1020080065244A KR20090006749A (ko) | 2007-07-12 | 2008-07-07 | 전자 장치 |
CNA2008101357453A CN101345239A (zh) | 2007-07-12 | 2008-07-11 | 电子装置 |
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JP2007183563A JP4469877B2 (ja) | 2007-07-12 | 2007-07-12 | 電子装置 |
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JP2009021441A true JP2009021441A (ja) | 2009-01-29 |
JP4469877B2 JP4469877B2 (ja) | 2010-06-02 |
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JP2007183563A Expired - Fee Related JP4469877B2 (ja) | 2007-07-12 | 2007-07-12 | 電子装置 |
Country Status (5)
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US (1) | US8253255B2 (ja) |
EP (1) | EP2015216A1 (ja) |
JP (1) | JP4469877B2 (ja) |
KR (1) | KR20090006749A (ja) |
CN (1) | CN101345239A (ja) |
Cited By (1)
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JP2015512136A (ja) * | 2011-12-01 | 2015-04-23 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | プログラム可能な変化を被るように設計された遷移デバイス |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4435095B2 (ja) * | 2006-01-04 | 2010-03-17 | 株式会社東芝 | 半導体システム |
JP4212622B2 (ja) | 2006-11-30 | 2009-01-21 | 株式会社東芝 | 時限スイッチ付き情報担体及び半導体集積回路 |
Citations (1)
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JP2004094922A (ja) * | 2002-07-08 | 2004-03-25 | Toshiba Corp | 有効期限付き機能利用装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US4588901A (en) | 1985-02-14 | 1986-05-13 | Pentalux Corporation | Timer control for television |
JP3955712B2 (ja) * | 2000-03-03 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体装置 |
US7630941B2 (en) * | 2000-10-31 | 2009-12-08 | International Business Machines Corporation | Performing horological functions in commercial transactions using time cells |
DE10108913A1 (de) * | 2001-02-23 | 2002-09-12 | Infineon Technologies Ag | Zeiterfassungsvorrichtung und Zeiterfassungsverfahren unter Verwendung eines Halbleiterelements |
JP2005516417A (ja) * | 2002-01-31 | 2005-06-02 | ミクロナス ゲーエムベーハー | プログラム可能な電子処理装置用のマウント |
US7075284B2 (en) | 2002-07-08 | 2006-07-11 | Kabushiki Kaisha Toshiba | Time limit function utilization |
JP4509721B2 (ja) | 2004-09-28 | 2010-07-21 | 株式会社東芝 | 半導体装置 |
JP2006221364A (ja) | 2005-02-09 | 2006-08-24 | Toshiba Corp | 半導体装置及びbios認証システム |
US20060277324A1 (en) * | 2005-06-02 | 2006-12-07 | Alfredo Aldereguia | Apparatus, system, and method for automatically detecting a cable configuration |
JP4489000B2 (ja) | 2005-10-12 | 2010-06-23 | 株式会社東芝 | 電子タイマー及びシステムlsi |
JP4435095B2 (ja) | 2006-01-04 | 2010-03-17 | 株式会社東芝 | 半導体システム |
-
2007
- 2007-07-12 JP JP2007183563A patent/JP4469877B2/ja not_active Expired - Fee Related
-
2008
- 2008-03-17 US US12/049,715 patent/US8253255B2/en not_active Expired - Fee Related
- 2008-03-18 EP EP20080152897 patent/EP2015216A1/en not_active Withdrawn
- 2008-07-07 KR KR1020080065244A patent/KR20090006749A/ko not_active Application Discontinuation
- 2008-07-11 CN CNA2008101357453A patent/CN101345239A/zh active Pending
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JP2004094922A (ja) * | 2002-07-08 | 2004-03-25 | Toshiba Corp | 有効期限付き機能利用装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015512136A (ja) * | 2011-12-01 | 2015-04-23 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | プログラム可能な変化を被るように設計された遷移デバイス |
JP2018032870A (ja) * | 2011-12-01 | 2018-03-01 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | プログラム可能な変化を被るように設計された遷移デバイス |
Also Published As
Publication number | Publication date |
---|---|
CN101345239A (zh) | 2009-01-14 |
US20090015074A1 (en) | 2009-01-15 |
US8253255B2 (en) | 2012-08-28 |
KR20090006749A (ko) | 2009-01-15 |
JP4469877B2 (ja) | 2010-06-02 |
EP2015216A1 (en) | 2009-01-14 |
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