JP2009016824A5 - - Google Patents

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Publication number
JP2009016824A5
JP2009016824A5 JP2008166113A JP2008166113A JP2009016824A5 JP 2009016824 A5 JP2009016824 A5 JP 2009016824A5 JP 2008166113 A JP2008166113 A JP 2008166113A JP 2008166113 A JP2008166113 A JP 2008166113A JP 2009016824 A5 JP2009016824 A5 JP 2009016824A5
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JP
Japan
Prior art keywords
forming
manufacturing
semiconductor device
film
diffusion barrier
Prior art date
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Granted
Application number
JP2008166113A
Other languages
English (en)
Japanese (ja)
Other versions
JP5445895B2 (ja
JP2009016824A (ja
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Publication date
Priority claimed from KR1020070064941A external-priority patent/KR100846097B1/ko
Application filed filed Critical
Publication of JP2009016824A publication Critical patent/JP2009016824A/ja
Publication of JP2009016824A5 publication Critical patent/JP2009016824A5/ja
Application granted granted Critical
Publication of JP5445895B2 publication Critical patent/JP5445895B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008166113A 2007-06-29 2008-06-25 半導体素子の製造方法 Expired - Fee Related JP5445895B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070064941A KR100846097B1 (ko) 2007-06-29 2007-06-29 반도체 소자의 제조 방법
KR10-2007-0064941 2007-06-29

Publications (3)

Publication Number Publication Date
JP2009016824A JP2009016824A (ja) 2009-01-22
JP2009016824A5 true JP2009016824A5 (enExample) 2011-08-04
JP5445895B2 JP5445895B2 (ja) 2014-03-19

Family

ID=39824476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008166113A Expired - Fee Related JP5445895B2 (ja) 2007-06-29 2008-06-25 半導体素子の製造方法

Country Status (3)

Country Link
US (1) US7732311B2 (enExample)
JP (1) JP5445895B2 (enExample)
KR (1) KR100846097B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101376260B1 (ko) * 2008-04-14 2014-03-20 삼성전자 주식회사 반도체 소자 및 그 제조 방법
CN102456556A (zh) * 2010-10-18 2012-05-16 中芯国际集成电路制造(上海)有限公司 金属硅化物的形成方法
US9483266B2 (en) 2013-03-15 2016-11-01 Intel Corporation Fusible instructions and logic to provide OR-test and AND-test functionality using multiple test sources
CN118969730B (zh) * 2024-10-16 2025-03-04 物元半导体技术(青岛)有限公司 混合键合方法及混合键合结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2889295B2 (ja) * 1989-07-17 1999-05-10 株式会社東芝 半導体装置及びその製造方法
JP3359794B2 (ja) * 1994-08-31 2002-12-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6323519B1 (en) * 1998-10-23 2001-11-27 Advanced Micro Devices, Inc. Ultrathin, nitrogen-containing MOSFET sidewall spacers using low-temperature semiconductor fabrication process
JP2000269490A (ja) * 1999-03-16 2000-09-29 Fujitsu Ltd 半導体装置の製造方法
JP4582837B2 (ja) * 1999-09-09 2010-11-17 シャープ株式会社 半導体装置の製造方法
KR100361576B1 (ko) 2000-04-07 2002-11-21 아남반도체 주식회사 반도체 소자의 금속전 절연막 제조 방법
US6534388B1 (en) * 2000-09-27 2003-03-18 Chartered Semiconductor Manufacturing Ltd. Method to reduce variation in LDD series resistance
JP2003077856A (ja) * 2001-06-18 2003-03-14 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2004153037A (ja) 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法
JP2004303789A (ja) * 2003-03-28 2004-10-28 Toshiba Corp 半導体装置及びその製造方法
KR100610436B1 (ko) * 2003-12-23 2006-08-08 주식회사 하이닉스반도체 게이트 산화막의 열화 억제 방법
JP2006019366A (ja) * 2004-06-30 2006-01-19 Canon Inc 半導体装置の絶縁膜形成方法
JP2006049779A (ja) * 2004-08-09 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
KR20060037776A (ko) * 2004-10-28 2006-05-03 주식회사 하이닉스반도체 원자층증착에 의한 게이트스페이서를 구비하는반도체소자의 제조 방법
KR100668954B1 (ko) 2004-12-15 2007-01-12 동부일렉트로닉스 주식회사 박막트랜지스터 제조 방법
KR20070043108A (ko) * 2005-10-20 2007-04-25 삼성전자주식회사 반도체 장치 제조방법

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