JP2009016808A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2009016808A
JP2009016808A JP2008146459A JP2008146459A JP2009016808A JP 2009016808 A JP2009016808 A JP 2009016808A JP 2008146459 A JP2008146459 A JP 2008146459A JP 2008146459 A JP2008146459 A JP 2008146459A JP 2009016808 A JP2009016808 A JP 2009016808A
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JP
Japan
Prior art keywords
fiber
element layer
film
semiconductor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008146459A
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English (en)
Japanese (ja)
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JP2009016808A5 (enExample
Inventor
Hisashi Otani
久 大谷
Eiji Sugiyama
栄二 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008146459A priority Critical patent/JP2009016808A/ja
Publication of JP2009016808A publication Critical patent/JP2009016808A/ja
Publication of JP2009016808A5 publication Critical patent/JP2009016808A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008146459A 2007-06-07 2008-06-04 半導体装置 Withdrawn JP2009016808A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008146459A JP2009016808A (ja) 2007-06-07 2008-06-04 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007151168 2007-06-07
JP2008146459A JP2009016808A (ja) 2007-06-07 2008-06-04 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012139924A Division JP2012212917A (ja) 2007-06-07 2012-06-21 半導体装置

Publications (2)

Publication Number Publication Date
JP2009016808A true JP2009016808A (ja) 2009-01-22
JP2009016808A5 JP2009016808A5 (enExample) 2011-07-07

Family

ID=39766836

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2008146459A Withdrawn JP2009016808A (ja) 2007-06-07 2008-06-04 半導体装置
JP2012139924A Withdrawn JP2012212917A (ja) 2007-06-07 2012-06-21 半導体装置
JP2014045961A Expired - Fee Related JP5770325B2 (ja) 2007-06-07 2014-03-10 半導体装置
JP2015126686A Withdrawn JP2015207785A (ja) 2007-06-07 2015-06-24 半導体装置

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2012139924A Withdrawn JP2012212917A (ja) 2007-06-07 2012-06-21 半導体装置
JP2014045961A Expired - Fee Related JP5770325B2 (ja) 2007-06-07 2014-03-10 半導体装置
JP2015126686A Withdrawn JP2015207785A (ja) 2007-06-07 2015-06-24 半導体装置

Country Status (4)

Country Link
US (1) US7906847B2 (enExample)
EP (1) EP2001047A1 (enExample)
JP (4) JP2009016808A (enExample)
KR (1) KR20080108047A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017157783A (ja) * 2016-03-04 2017-09-07 三菱瓦斯化学株式会社 プリント配線基板
JP2019520691A (ja) * 2016-07-08 2019-07-18 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 薄膜トランジスタ、薄膜トランジスタを有するゲートドライバオンアレイ及び表示装置、並びにそれらの製造方法
JP2021132208A (ja) * 2020-02-19 2021-09-09 東レ株式会社 半導体装置およびその製造方法、ならびに無線通信装置

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CN101803008B (zh) 2007-09-07 2012-11-28 株式会社半导体能源研究所 半导体装置及其制造方法
JP5460108B2 (ja) * 2008-04-18 2014-04-02 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
WO2009131132A1 (en) * 2008-04-25 2009-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20090114171A (ko) * 2008-04-29 2009-11-03 삼성전자주식회사 표시 장치
WO2009139282A1 (en) * 2008-05-12 2009-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2009142310A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2297778A1 (en) * 2008-05-23 2011-03-23 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
JP5248412B2 (ja) * 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8053253B2 (en) * 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102057488B (zh) * 2008-06-06 2013-09-18 株式会社半导体能源研究所 半导体装置的制造方法
JP5473413B2 (ja) * 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
WO2010005064A1 (en) * 2008-07-10 2010-01-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
JP2010041040A (ja) * 2008-07-10 2010-02-18 Semiconductor Energy Lab Co Ltd 光電変換装置および光電変換装置の製造方法
TWI475282B (zh) * 2008-07-10 2015-03-01 Semiconductor Energy Lab 液晶顯示裝置和其製造方法
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010032611A1 (en) * 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
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WO2010126876A1 (en) 2009-04-27 2010-11-04 Drexel University Transparent conformal polymer antennas for rfid and other wireless communications applications
KR101677076B1 (ko) * 2009-06-05 2016-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 디바이스 및 그 제조 방법
WO2010140539A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
WO2010140522A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
TW201110802A (en) * 2009-06-24 2011-03-16 Seiko Epson Corp Electro-optical device, electronic device, and illumination apparatus
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
US8345435B2 (en) * 2009-08-07 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Terminal structure and manufacturing method thereof, and electronic device and manufacturing method thereof
TWI517268B (zh) * 2009-08-07 2016-01-11 半導體能源研究所股份有限公司 端子構造的製造方法和電子裝置的製造方法
KR101801956B1 (ko) 2009-09-16 2017-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
JP5719560B2 (ja) * 2009-10-21 2015-05-20 株式会社半導体エネルギー研究所 端子構造の作製方法
KR101617280B1 (ko) * 2009-10-21 2016-05-03 엘지디스플레이 주식회사 플라스틱 기판을 이용한 표시장치 제조 방법
KR101094292B1 (ko) 2010-05-28 2011-12-19 삼성모바일디스플레이주식회사 유기 발광 표시 장치
KR101798487B1 (ko) * 2010-06-01 2017-11-17 삼성디스플레이 주식회사 표시 장치
KR101201720B1 (ko) * 2010-07-29 2012-11-15 삼성디스플레이 주식회사 표시 장치 및 유기 발광 표시 장치
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WO2013108311A1 (ja) * 2012-01-16 2013-07-25 Ｎｅｃカシオモバイルコミュニケーションズ株式会社 携帯端末装置
US8940618B2 (en) * 2012-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for cutting semiconductor wafers
CN109334132B (zh) 2012-08-24 2022-02-25 迪睿合电子材料有限公司 各向异性导电膜及其制造方法
KR102208591B1 (ko) * 2012-08-24 2021-01-27 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름의 제조 방법 및 이방성 도전 필름
KR20140071813A (ko) 2012-12-04 2014-06-12 삼성전자주식회사 파이버 상에 형성된 저항성 메모리 소자 및 그 제종 방법
WO2014098275A1 (ko) * 2012-12-17 2014-06-26 코오롱글로텍주식회사 플렉서블 디스플레이를 위한 평탄화 섬유기판의 제조방법
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JP6463662B2 (ja) * 2015-10-06 2019-02-06 信越化学工業株式会社 半導体封止用基材付封止材、半導体封止用基材付封止材の製造方法、及び半導体装置の製造方法
JP2017147537A (ja) * 2016-02-16 2017-08-24 レノボ・シンガポール・プライベート・リミテッド 電子機器および電子機器用筐体
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