JP2008538728A - ナノワイヤー分散組成物およびその使用 - Google Patents

ナノワイヤー分散組成物およびその使用 Download PDF

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Publication number
JP2008538728A
JP2008538728A JP2008506571A JP2008506571A JP2008538728A JP 2008538728 A JP2008538728 A JP 2008538728A JP 2008506571 A JP2008506571 A JP 2008506571A JP 2008506571 A JP2008506571 A JP 2008506571A JP 2008538728 A JP2008538728 A JP 2008538728A
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nanowire
dispersion composition
nanowires
dispersant
nanowire dispersion
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JP2008538728A5 (https=
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シェリ・エックス.・ワイ.・ペレイラ
フランセスコ・レミー
デヴィッド・ピー.・スタンボ
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ナノシス・インク.
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005Oxydation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/08Germanium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/602Nanotubes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24372Particulate matter
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24372Particulate matter
    • Y10T428/24405Polymer or resin [e.g., natural or synthetic rubber, etc.]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Biophysics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Silicon Compounds (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
  • Colloid Chemistry (AREA)
JP2008506571A 2005-04-13 2006-04-06 ナノワイヤー分散組成物およびその使用 Pending JP2008538728A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67113105P 2005-04-13 2005-04-13
PCT/US2006/013290 WO2006113207A2 (en) 2005-04-13 2006-04-06 Nanowire dispersion compositions and uses thereof

Related Child Applications (1)

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JP2014172027A Division JP2015037831A (ja) 2005-04-13 2014-08-26 ナノワイヤー分散組成物

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JP2008538728A true JP2008538728A (ja) 2008-11-06
JP2008538728A5 JP2008538728A5 (https=) 2009-05-28

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JP2014172027A Pending JP2015037831A (ja) 2005-04-13 2014-08-26 ナノワイヤー分散組成物

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US (2) US7745498B2 (https=)
EP (1) EP1871162B1 (https=)
JP (2) JP2008538728A (https=)
WO (1) WO2006113207A2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012238592A (ja) * 2011-04-28 2012-12-06 Fujifilm Corp 金属ナノワイヤを含有する分散液および導電膜
JP5472299B2 (ja) * 2009-06-24 2014-04-16 コニカミノルタ株式会社 透明電極、該透明電極に用いられる導電性繊維の精製方法、及び有機エレクトロルミネッセンス素子
JP2019505403A (ja) * 2015-12-31 2019-02-28 ダウ グローバル テクノロジーズ エルエルシー ナノ構造材料の連続フロー合成
US12568714B2 (en) 2022-07-05 2026-03-03 Kabushiki Kaisha Toshiba Transparent electrode, producing method thereof, and electronic device using transparent electrode

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
KR101138865B1 (ko) * 2005-03-09 2012-05-14 삼성전자주식회사 나노 와이어 및 그 제조 방법
JP4965835B2 (ja) * 2005-03-25 2012-07-04 キヤノン株式会社 構造体、その製造方法、及び該構造体を用いたデバイス
GB0512666D0 (en) * 2005-06-22 2005-07-27 Univ Loughborough Method for concentrating nanosuspensions
ATE532217T1 (de) * 2005-08-12 2011-11-15 Cambrios Technologies Corp Verfahren zur herstellung von transparente leiter auf nanodrahtbasis
EP2076924B1 (en) * 2006-11-17 2017-03-08 Semiconductor Energy Laboratory Co, Ltd. Unerasable memory element and method for manufacturing the same
JP4528324B2 (ja) * 2007-01-11 2010-08-18 本田技研工業株式会社 熱輸送流体およびその製造方法
JP2008201834A (ja) * 2007-02-16 2008-09-04 Honda Motor Co Ltd 熱輸送流体
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
EP2127787B1 (en) * 2007-03-08 2013-05-08 Asahi Kasei Medical Co., Ltd. Method for test on integrity of microporous membrane
US7859036B2 (en) 2007-04-05 2010-12-28 Micron Technology, Inc. Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
CA2688335C (en) 2007-05-29 2015-07-21 Innova Materials, Llc Surfaces having particles and related methods
EP2173655B1 (en) * 2007-07-09 2020-04-08 Nanocomp Technologies, Inc. Chemically-assisted alignment of nanotubes within extensible structures
US8455055B1 (en) * 2007-10-26 2013-06-04 The Boeing Company Aligning nanotubes
JP5507440B2 (ja) * 2008-02-27 2014-05-28 株式会社クラレ 金属ナノワイヤの製造方法並びに得られた金属ナノワイヤよりなる分散液および透明導電膜
JP5360739B2 (ja) * 2008-03-05 2013-12-04 独立行政法人物質・材料研究機構 電子素子とその製造方法
WO2009142763A1 (en) * 2008-05-23 2009-11-26 Swaminathan Ramesh Hybrid photovoltaic cell module
EP2143768A1 (en) * 2008-07-11 2010-01-13 Acreo AB Waterbased casting or printing composition
WO2010022353A1 (en) 2008-08-21 2010-02-25 Innova Meterials, Llc Enhanced surfaces, coatings, and related methods
US20120107600A1 (en) * 2009-07-17 2012-05-03 Chaofeng Zou Transparent conductive film comprising cellulose esters
WO2011031876A1 (en) 2009-09-09 2011-03-17 Qd Vision, Inc. Formulations including nanoparticles
JP5744033B2 (ja) 2009-09-09 2015-07-01 キユーデイー・ビジヨン・インコーポレーテツド ナノ粒子を含む粒子、それの使用および方法
KR101564330B1 (ko) 2009-10-15 2015-10-29 삼성전자주식회사 유기 나노와이어를 포함하는 태양전지
US8396420B2 (en) * 2009-12-30 2013-03-12 Ubidyne, Inc. Active antenna system for a mobile communications network as well as a method for relaying a plurality of radio signals through the active antenna system
EP2539904A4 (en) * 2010-02-27 2018-01-10 Innova Dynamics, Inc. Structures with surface-embedded additives and related manufacturing methods
KR20130038812A (ko) * 2010-03-19 2013-04-18 케어스트림 헬스 인코포레이티드 투명한 전도성 필름용 부식 방지제
KR20110126998A (ko) * 2010-05-18 2011-11-24 삼성전자주식회사 Cnt 조성물, cnt 막구조체, 액정표시장치, cnt 막구조체의 제조방법 및 액정표시장치의 제조방법
JP5988974B2 (ja) 2010-08-07 2016-09-07 ティーピーケイ ホールディング カンパニー リミテッド 表面埋込添加物を有する素子構成要素および関連製造方法
US9000660B2 (en) * 2010-11-15 2015-04-07 Laurence H. Cooke Uses of hydrocarbon nanorings
CN103338882B (zh) * 2010-12-07 2017-03-08 罗地亚管理公司 导电纳米结构体、制备该纳米结构体的方法、包括该纳米结构体的导电聚合物膜以及包括该膜的电子装置
US8722171B2 (en) 2011-01-04 2014-05-13 Nanocomp Technologies, Inc. Nanotube-based insulators
JP2013016455A (ja) * 2011-01-13 2013-01-24 Jnc Corp 透明導電膜の形成に用いられる塗膜形成用組成物
WO2012118582A1 (en) * 2011-02-28 2012-09-07 Nthdegree Technologies Worldwide Inc. Metallic nanofiber ink, substantially transparent conductor, and fabrication method
US20120301705A1 (en) * 2011-05-23 2012-11-29 Eckert Karissa L Nanowire coatings, films, and articles
JP2015527259A (ja) * 2012-06-18 2015-09-17 イノーバ ダイナミクス インコーポレイテッド 容器内に貯蔵されたナノワイヤ懸濁液における凝集体の低減
JP6147860B2 (ja) 2012-09-27 2017-06-14 ロディア オペレーションズRhodia Operations 銀ナノ構造を作製するための方法及び同方法に有用なコポリマー
TWI525643B (zh) * 2012-11-09 2016-03-11 財團法人工業技術研究院 導電油墨組成物及透明導電薄膜
US20140205845A1 (en) * 2013-01-18 2014-07-24 Carestream Health, Inc. Stabilization agents for transparent conductive films
WO2014204561A1 (en) 2013-06-17 2014-12-24 Nanocomp Technologies, Inc. Exfoliating-dispersing agents for nanotubes, bundles and fibers
KR101683532B1 (ko) * 2013-07-31 2016-12-08 고려대학교 산학협력단 바나듐 옥사이드 나노와이어를 이용한 다공성 고분자막의 제조방법 및 이에 따라 제조된 다공성 고분자막
KR102152632B1 (ko) * 2013-08-23 2020-09-09 엘지이노텍 주식회사 나노 와이어 잉크
US20150108388A1 (en) * 2013-10-21 2015-04-23 Taiflex Scientific Co., Ltd. Light Absorbing Composition And Light-Absorbing Structure Made Therefrom
DE102013226998B4 (de) 2013-12-20 2015-08-06 Technische Universität Dresden Verfahren zur Herstellung einer Nanodrahtelektrode für optoelektronische Bauelemente sowie deren Verwendung
US10190051B2 (en) * 2014-06-10 2019-01-29 Alexium, Inc. Emulsification of hydrophobic organophosphorous compounds
US9607726B2 (en) * 2015-01-30 2017-03-28 Xerox Corporation Composition comprising silver nanowires
US9947430B2 (en) 2015-01-30 2018-04-17 Xerox Corporation Transparent conductive film comprising silver nanowires
CN110534684A (zh) * 2019-08-27 2019-12-03 华南理工大学 一种一维纳米线改性聚合物隔膜及其制备方法与应用
CN115182017A (zh) * 2021-04-01 2022-10-14 浙江正泰电器股份有限公司 复配型分散剂及制备方法、混合电镀液及制备方法

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1128669A (ja) * 1997-07-04 1999-02-02 Mitsubishi Materials Corp 精密切断用超砥粒メタルボンド砥石およびその製造方法
JP2001167692A (ja) * 1999-10-18 2001-06-22 Lucent Technol Inc 位置合せされたナノワイヤを備えた物品および物品を製作するプロセス
JP2002009278A (ja) * 2000-06-21 2002-01-11 Toshiba Corp 半導体装置及びその製造方法
JP2002154819A (ja) * 2000-11-09 2002-05-28 Japan Science & Technology Corp 酸化珪素のナノワイヤの製造方法
JP2002220300A (ja) * 2001-01-18 2002-08-09 Vision Arts Kk ナノファイバーおよびナノファイバーの作製方法
JP2003020228A (ja) * 2001-07-03 2003-01-24 Fuji Photo Film Co Ltd 金属または金属−カルコゲンナノ粒子の液相合成法およびこれを用いた相変化光記録媒体
WO2003107359A1 (en) * 2002-06-14 2003-12-24 Hyperion Catalysis International, Inc. Electroconductive carbon fibril-based inks and coatings
WO2004032193A2 (en) * 2002-09-30 2004-04-15 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US20040157414A1 (en) * 2000-03-29 2004-08-12 Gole James L. Silicon based nanospheres and nanowires
JP2004238503A (ja) * 2003-02-06 2004-08-26 Mitsubishi Materials Corp 金属ナノ繊維含有組成物およびその用途
US20040175844A1 (en) * 2002-12-09 2004-09-09 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube
JP2004271735A (ja) * 2003-03-06 2004-09-30 Fuji Photo Film Co Ltd 硬化性コーティング組成物の製造方法、硬化膜、反射防止膜、偏光板、及び画像表示装置
JP2004311265A (ja) * 2003-04-09 2004-11-04 Sumitomo Electric Ind Ltd 導電性インク及びその製造方法
WO2004101430A1 (ja) * 2003-05-13 2004-11-25 Mitsubishi Materials Corporation 金属ナノロッドの製造方法およびその用途
US20050009224A1 (en) * 2003-06-20 2005-01-13 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same
US20050025694A1 (en) * 2000-12-12 2005-02-03 Zhiqiang Zhang Preparation of stable carbon nanotube dispersions in liquids
JP2005070318A (ja) * 2003-08-22 2005-03-17 Fuji Photo Film Co Ltd 防眩性反射防止フィルムおよびその製造方法、偏光板並びに画像表示装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993010564A1 (en) * 1991-11-22 1993-05-27 The Regents Of The University Of California Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US6048616A (en) * 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
TW324022B (en) * 1993-10-08 1998-01-01 Toshiba Co Ltd Pigment dispersion liquid composition
US5690807A (en) * 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
US5869405A (en) * 1996-01-03 1999-02-09 Micron Technology, Inc. In situ rapid thermal etch and rapid thermal oxidation
US5897945A (en) * 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6036774A (en) * 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
EP0792688A1 (en) * 1996-03-01 1997-09-03 Dow Corning Corporation Nanoparticles of silicon oxide alloys
US5997832A (en) * 1997-03-07 1999-12-07 President And Fellows Of Harvard College Preparation of carbide nanorods
US6413489B1 (en) * 1997-04-15 2002-07-02 Massachusetts Institute Of Technology Synthesis of nanometer-sized particles by reverse micelle mediated techniques
US5990479A (en) * 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
AU782000B2 (en) * 1999-07-02 2005-06-23 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6225198B1 (en) * 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6306736B1 (en) * 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
GB0020273D0 (en) * 2000-08-18 2000-10-04 Avecia Ltd Chemical composition
AU8664901A (en) * 2000-08-22 2002-03-04 Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
ATE408140T1 (de) * 2000-12-11 2008-09-15 Harvard College Vorrichtung enthaltend nanosensoren zur ekennung eines analyten und verfahren zu ihrer herstellung
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US6896864B2 (en) * 2001-07-10 2005-05-24 Battelle Memorial Institute Spatial localization of dispersed single walled carbon nanotubes into useful structures
AU2002356530A1 (en) * 2001-09-28 2003-04-07 Boston Scientific Limited Medical devices comprising nanomaterials and therapeutic methods utilizing the same
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20040026684A1 (en) * 2002-04-02 2004-02-12 Nanosys, Inc. Nanowire heterostructures for encoding information
JP2005538573A (ja) * 2002-09-05 2005-12-15 ナノシス・インク. ナノ構造及びナノ複合材をベースとする組成物
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7357877B2 (en) 2002-11-18 2008-04-15 Koninklijke Philips Electronics N.V. Dispersion of nanowires of semiconductor material
US7067328B2 (en) * 2003-09-25 2006-06-27 Nanosys, Inc. Methods, devices and compositions for depositing and orienting nanostructures
JP2008506254A (ja) * 2004-07-07 2008-02-28 ナノシス・インコーポレイテッド ナノワイヤーの集積及び組み込みのためのシステムおよび方法
DE102004034567A1 (de) * 2004-07-17 2006-02-23 Daimlerchrysler Ag Vorrichtung zur Schwingungsdämpfung

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1128669A (ja) * 1997-07-04 1999-02-02 Mitsubishi Materials Corp 精密切断用超砥粒メタルボンド砥石およびその製造方法
JP2001167692A (ja) * 1999-10-18 2001-06-22 Lucent Technol Inc 位置合せされたナノワイヤを備えた物品および物品を製作するプロセス
US20040157414A1 (en) * 2000-03-29 2004-08-12 Gole James L. Silicon based nanospheres and nanowires
JP2002009278A (ja) * 2000-06-21 2002-01-11 Toshiba Corp 半導体装置及びその製造方法
JP2002154819A (ja) * 2000-11-09 2002-05-28 Japan Science & Technology Corp 酸化珪素のナノワイヤの製造方法
US20050025694A1 (en) * 2000-12-12 2005-02-03 Zhiqiang Zhang Preparation of stable carbon nanotube dispersions in liquids
JP2002220300A (ja) * 2001-01-18 2002-08-09 Vision Arts Kk ナノファイバーおよびナノファイバーの作製方法
JP2003020228A (ja) * 2001-07-03 2003-01-24 Fuji Photo Film Co Ltd 金属または金属−カルコゲンナノ粒子の液相合成法およびこれを用いた相変化光記録媒体
WO2003107359A1 (en) * 2002-06-14 2003-12-24 Hyperion Catalysis International, Inc. Electroconductive carbon fibril-based inks and coatings
WO2004032193A2 (en) * 2002-09-30 2004-04-15 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US20040175844A1 (en) * 2002-12-09 2004-09-09 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube
JP2004238503A (ja) * 2003-02-06 2004-08-26 Mitsubishi Materials Corp 金属ナノ繊維含有組成物およびその用途
JP2004271735A (ja) * 2003-03-06 2004-09-30 Fuji Photo Film Co Ltd 硬化性コーティング組成物の製造方法、硬化膜、反射防止膜、偏光板、及び画像表示装置
JP2004311265A (ja) * 2003-04-09 2004-11-04 Sumitomo Electric Ind Ltd 導電性インク及びその製造方法
WO2004101430A1 (ja) * 2003-05-13 2004-11-25 Mitsubishi Materials Corporation 金属ナノロッドの製造方法およびその用途
US20050009224A1 (en) * 2003-06-20 2005-01-13 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same
JP2005070318A (ja) * 2003-08-22 2005-03-17 Fuji Photo Film Co Ltd 防眩性反射防止フィルムおよびその製造方法、偏光板並びに画像表示装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5472299B2 (ja) * 2009-06-24 2014-04-16 コニカミノルタ株式会社 透明電極、該透明電極に用いられる導電性繊維の精製方法、及び有機エレクトロルミネッセンス素子
JP2012238592A (ja) * 2011-04-28 2012-12-06 Fujifilm Corp 金属ナノワイヤを含有する分散液および導電膜
JP2019505403A (ja) * 2015-12-31 2019-02-28 ダウ グローバル テクノロジーズ エルエルシー ナノ構造材料の連続フロー合成
JP7018021B2 (ja) 2015-12-31 2022-02-09 ダウ グローバル テクノロジーズ エルエルシー ナノ構造材料の連続フロー合成
US12568714B2 (en) 2022-07-05 2026-03-03 Kabushiki Kaisha Toshiba Transparent electrode, producing method thereof, and electronic device using transparent electrode

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