JP2008532299A - 放射線を発する半導体を備えたモジュール - Google Patents

放射線を発する半導体を備えたモジュール Download PDF

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Publication number
JP2008532299A
JP2008532299A JP2007557317A JP2007557317A JP2008532299A JP 2008532299 A JP2008532299 A JP 2008532299A JP 2007557317 A JP2007557317 A JP 2007557317A JP 2007557317 A JP2007557317 A JP 2007557317A JP 2008532299 A JP2008532299 A JP 2008532299A
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JP
Japan
Prior art keywords
semiconductor
module according
radiation
semiconductors
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007557317A
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English (en)
Japanese (ja)
Inventor
グレッチュ シュテファン
ハーン ベルトルト
イレク シュテファン
シュナーベル ヴォルフガング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2008532299A publication Critical patent/JP2008532299A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
JP2007557317A 2005-02-28 2006-02-10 放射線を発する半導体を備えたモジュール Pending JP2008532299A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005009060A DE102005009060A1 (de) 2005-02-28 2005-02-28 Modul mit strahlungsemittierenden Halbleiterkörpern
PCT/DE2006/000232 WO2006089512A1 (de) 2005-02-28 2006-02-10 Modul mit strahlungsemittierenden halbleiterkörpern

Publications (1)

Publication Number Publication Date
JP2008532299A true JP2008532299A (ja) 2008-08-14

Family

ID=36442045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007557317A Pending JP2008532299A (ja) 2005-02-28 2006-02-10 放射線を発する半導体を備えたモジュール

Country Status (8)

Country Link
US (1) US8154031B2 (https=)
EP (1) EP1854139A1 (https=)
JP (1) JP2008532299A (https=)
KR (1) KR101238981B1 (https=)
CN (1) CN100595918C (https=)
DE (1) DE102005009060A1 (https=)
TW (1) TW200711099A (https=)
WO (1) WO2006089512A1 (https=)

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JP2010251796A (ja) * 2010-07-06 2010-11-04 Toshiba Lighting & Technology Corp 発光モジュール
JP2012502464A (ja) * 2009-06-18 2012-01-26 ユトロニクス インコーポレイテッド Ｌｅｄアレイモジュール及びその製造方法
JP2022107942A (ja) * 2021-01-12 2022-07-25 シーシーエス株式会社 Ｌｅｄ光源

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DE102008005935A1 (de) * 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Halbleiteranordnung sowie Verfahren zur Herstellung einer Halbleiteranordnung
JP5340879B2 (ja) * 2009-10-13 2013-11-13 スタンレー電気株式会社 発光装置
US8482015B2 (en) * 2009-12-03 2013-07-09 Toyoda Gosei Co., Ltd. LED light emitting apparatus and vehicle headlamp using the same
JP5571419B2 (ja) * 2010-03-24 2014-08-13 スタンレー電気株式会社 車両用前照灯
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US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
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DE102013218541A1 (de) * 2013-09-16 2015-03-19 Osram Gmbh Leuchtmodul mit Halbleiterlichtquellen und Trägerplatte
CN104576883B (zh) 2013-10-29 2018-11-16 普因特工程有限公司 芯片安装用阵列基板及其制造方法
US9367094B2 (en) 2013-12-17 2016-06-14 Apple Inc. Display module and system applications
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
DE102013114691A1 (de) 2013-12-20 2015-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und adaptiver Scheinwerfer für ein Kraftfahrzeug
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9542638B2 (en) 2014-02-18 2017-01-10 Apple Inc. RFID tag and micro chip integration design
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
DE102014103751A1 (de) * 2014-03-19 2015-09-24 Osram Opto Semiconductors Gmbh Organisches strahlungsemittierendes Bauelement
US9522468B2 (en) 2014-05-08 2016-12-20 Apple Inc. Mass transfer tool manipulator assembly with remote center of compliance
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9741286B2 (en) 2014-06-03 2017-08-22 Apple Inc. Interactive display panel with emitting and sensing diodes
US9624100B2 (en) 2014-06-12 2017-04-18 Apple Inc. Micro pick up array pivot mount with integrated strain sensing elements
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KR102298484B1 (ko) 2016-01-15 2021-09-03 로히니, 엘엘씨. 장치 상의 커버를 통해 후면 발광하는 장치 및 방법
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Publication number Priority date Publication date Assignee Title
JP2012502464A (ja) * 2009-06-18 2012-01-26 ユトロニクス インコーポレイテッド Ｌｅｄアレイモジュール及びその製造方法
JP2010251796A (ja) * 2010-07-06 2010-11-04 Toshiba Lighting & Technology Corp 発光モジュール
JP2022107942A (ja) * 2021-01-12 2022-07-25 シーシーエス株式会社 Ｌｅｄ光源

Also Published As

Publication number Publication date
DE102005009060A1 (de) 2006-09-07
TW200711099A (en) 2007-03-16
CN100595918C (zh) 2010-03-24
WO2006089512A1 (de) 2006-08-31
EP1854139A1 (de) 2007-11-14
KR20070106624A (ko) 2007-11-02
KR101238981B1 (ko) 2013-03-08
US20080303038A1 (en) 2008-12-11
TWI332259B (https=) 2010-10-21
CN101128932A (zh) 2008-02-20
US8154031B2 (en) 2012-04-10

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