JP2008532299A - 放射線を発する半導体を備えたモジュール - Google Patents
放射線を発する半導体を備えたモジュール Download PDFInfo
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- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Abstract
Description
−放射線を発生させるエピタキシ層列の、支持エレメントに面した第1の主面に、反射性の層が被着されるか、または形成されており、この反射性の層は、エピタキシ層列で発生された電磁放射線の少なくとも一部を、該エピタキシ層列内へ再反射させる、
−支持エレメントが、エピタキシ層列を成長させた成長基板とは異なる、該成長基板の剥離前にエピタキシ層列に被着されたエレメントである、
−エピタキシ層列が、20μmまたはそれよりも小さい範囲の厚さ、特に10μmの範囲の厚さを有している、
−エピタキシ層列が、混合構造を有する少なくとも1つの面を備えた少なくとも1つの半導体層を有しており、この混合構造は、理想的にはエピタキシャル(epitaktisch)なエピタキシ層列内での光線のほぼエルゴード的(ergodisch)な分布を生ぜしめる、すなわち前記混合構造はできるだけエルゴード的に確率的(stochastisch.)な散乱特性を有している。
図2は、本発明によるモジュールの第2実施例の概略的な平面図であり、
図3は、第1実施例および第2実施例の概略的な断面図であり、
図4は、本発明によるモジュールの第3実施例の概略的な平面図であり、
図5は、本発明によるモジュールの第4実施例の概略的な平面図であり、
図6aは、第4実施例による薄膜型の半導体の概略的な断面図であり、
図6bは、第4実施例による薄膜型の半導体の概略的な平面図である。
Claims (24)
- 支持体(2)に設けられた搭載面(6)に被着されている、規則的に配置された、放射線を発する個々の半導体(1)を有するモジュールにおいて、互いに隣接し合った2つの、放射線を発する半導体(1)の間のワイヤ接続部(5)が、該両半導体(1)の、前記搭載面(6)とは反対の側の上面に取り付けられていることを特徴とする、放射線を発する半導体を備えたモジュール。
- 規則的な配置が、複数の列と複数の行とから成るマトリックスに相当している、請求項1記載のモジュール。
- マトリックスが、3×4−マトリックス、4×3−マトリックスまたは16×9−マトリックスである、請求項2記載のモジュール。
- 2つの行の間の間隔(17)が、100μmに等しいか、またはそれよりも小さい、請求項2または3記載のモジュール。
- 2つの列の間の間隔(18)が、100μmに等しいか、またはそれよりも小さい、請求項2から4までのいずれか1項記載のモジュール。
- 同一列内の、放射線を発する半導体(1)が、直列に接続されている、請求項2から5までのいずれか1項記載のモジュール。
- 互いに隣接した2つの列の、放射線を発する半導体(1)が、同一行内で並列に接続されている、請求項2から6までのいずれか1項記載のモジュール。
- 放射線を発する1つの半導体の上面が、第1の電気伝導タイプの層を有しており、該半導体に同一列内で隣接した、放射線を発する別の半導体の上面が、第2の電気伝導タイプの層を有している、請求項2から7までのいずれか1項記載のモジュール。
- 支持体(2)が、搭載面(6)にメタライジング部(4)を有している、請求項8記載のモジュール。
- メタライジング部(4)が、1つまたは複数の中断部(7)を有している、請求項9記載のモジュール。
- 2つの中断部の間の間隔が、行間隔の2倍に相当している、請求項10記載のモジュール。
- 放射線を発する各半導体(1)が、上面にp−コンタクティング部もn−コンタクティング部をも有している、請求項2から7までのいずれか1項記載のモジュール。
- n−コンタクティング部(8b)が、放射線を発する半導体(1)の、支持エレメント(9)上に配置された層列(13,9,15,11,12,14,13)の上面(16)に被着されている、請求項12記載のモジュール。
- p−コンタクティング部(8a)が、放射線を発する半導体(1)のメサ構造体に被着されている、請求項12または13記載のモジュール。
- 支持体(2)が、搭載面(6)にメタライジング部を有している、請求項12から14までのいずれか1項記載のモジュール。
- 放射線を発する半導体(1)から成る配置に、多数のボンディングパッド(3)が横方向で後置されている、請求項1から15までのいずれか1項記載のモジュール。
- 放射線を発する半導体(1)の一部が、ワイヤ接続部(5)によってボンディングパッド(3)に接続されている、請求項16記載のモジュール。
- 放射線を発する半導体(1)が、薄膜型の半導体である、請求項1から17までのいずれか1項記載のモジュール。
- 放射線を発する半導体(1)が、InGaNまたはInGaAlPのような半導体材料を含有している、請求項18記載のモジュール。
- 放射線を発する半導体(1)が搭載されている支持体(2)が、電気的に絶縁性の材料を含有している、請求項1から19までのいずれか1項記載のモジュール。
- 支持体(2)がセラミック材料を含有している、請求項20記載のモジュール。
- 支持体(2)がAlNを含有している、請求項21記載のモジュール。
- 放射線を発する半導体(1)が成形材料によって包囲されている、請求項1から22までのいずれか1項記載のモジュール。
- 請求項1から23までのいずれか1項記載のモジュールの、投影用途のための使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005009060A DE102005009060A1 (de) | 2005-02-28 | 2005-02-28 | Modul mit strahlungsemittierenden Halbleiterkörpern |
PCT/DE2006/000232 WO2006089512A1 (de) | 2005-02-28 | 2006-02-10 | Modul mit strahlungsemittierenden halbleiterkörpern |
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Publication Number | Publication Date |
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JP2008532299A true JP2008532299A (ja) | 2008-08-14 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007557317A Pending JP2008532299A (ja) | 2005-02-28 | 2006-02-10 | 放射線を発する半導体を備えたモジュール |
Country Status (8)
Country | Link |
---|---|
US (1) | US8154031B2 (ja) |
EP (1) | EP1854139A1 (ja) |
JP (1) | JP2008532299A (ja) |
KR (1) | KR101238981B1 (ja) |
CN (1) | CN100595918C (ja) |
DE (1) | DE102005009060A1 (ja) |
TW (1) | TW200711099A (ja) |
WO (1) | WO2006089512A1 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
CN100595918C (zh) | 2010-03-24 |
EP1854139A1 (de) | 2007-11-14 |
US8154031B2 (en) | 2012-04-10 |
DE102005009060A1 (de) | 2006-09-07 |
CN101128932A (zh) | 2008-02-20 |
WO2006089512A1 (de) | 2006-08-31 |
KR101238981B1 (ko) | 2013-03-08 |
US20080303038A1 (en) | 2008-12-11 |
KR20070106624A (ko) | 2007-11-02 |
TWI332259B (ja) | 2010-10-21 |
TW200711099A (en) | 2007-03-16 |
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