JP2008532262A5 - - Google Patents
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- Publication number
- JP2008532262A5 JP2008532262A5 JP2007553093A JP2007553093A JP2008532262A5 JP 2008532262 A5 JP2008532262 A5 JP 2008532262A5 JP 2007553093 A JP2007553093 A JP 2007553093A JP 2007553093 A JP2007553093 A JP 2007553093A JP 2008532262 A5 JP2008532262 A5 JP 2008532262A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- dopant
- gate stack
- containing gas
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 35
- 239000002019 doping agent Substances 0.000 claims 18
- 239000007789 gas Substances 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 15
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910004542 HfN Inorganic materials 0.000 claims 1
- 229910004129 HfSiO Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910004166 TaN Inorganic materials 0.000 claims 1
- 229910004200 TaSiN Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 229910008482 TiSiN Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910006501 ZrSiO Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/045,124 | 2005-01-31 | ||
| US11/045,124 US7393761B2 (en) | 2005-01-31 | 2005-01-31 | Method for fabricating a semiconductor device |
| PCT/US2005/043293 WO2006083380A2 (en) | 2005-01-31 | 2005-11-30 | Method for fabricating a semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008532262A JP2008532262A (ja) | 2008-08-14 |
| JP2008532262A5 true JP2008532262A5 (enExample) | 2009-02-19 |
| JP5042038B2 JP5042038B2 (ja) | 2012-10-03 |
Family
ID=36757111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007553093A Expired - Fee Related JP5042038B2 (ja) | 2005-01-31 | 2005-11-30 | 半導体装置を製造する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7393761B2 (enExample) |
| JP (1) | JP5042038B2 (enExample) |
| KR (1) | KR101161468B1 (enExample) |
| CN (1) | CN101128922B (enExample) |
| WO (1) | WO2006083380A2 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007088199A (ja) * | 2005-09-22 | 2007-04-05 | Canon Inc | 処理装置 |
| US7667247B2 (en) * | 2007-03-30 | 2010-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for passivating gate dielectric films |
| US7713757B2 (en) * | 2008-03-14 | 2010-05-11 | Applied Materials, Inc. | Method for measuring dopant concentration during plasma ion implantation |
| US9711373B2 (en) * | 2008-09-22 | 2017-07-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a gate dielectric for high-k metal gate devices |
| US7807961B2 (en) * | 2008-10-08 | 2010-10-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for ion implantation of molecular ions |
| US8664070B2 (en) * | 2009-12-21 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | High temperature gate replacement process |
| US8836035B2 (en) * | 2010-03-10 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for reducing gate resistance |
| US8436318B2 (en) * | 2010-04-05 | 2013-05-07 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for controlling the temperature of an RF ion source window |
| WO2011145633A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2013534712A (ja) * | 2010-06-23 | 2013-09-05 | 東京エレクトロン株式会社 | プラズマドーピング装置、プラズマドーピング方法、半導体素子の製造方法、および半導体素子 |
| US8003503B1 (en) | 2010-09-30 | 2011-08-23 | Tokyo Electron Limited | Method of integrating stress into a gate stack |
| US20130149852A1 (en) * | 2011-12-08 | 2013-06-13 | Tokyo Electron Limited | Method for forming a semiconductor device |
| JP2013165254A (ja) * | 2012-01-13 | 2013-08-22 | Tokyo Electron Ltd | プラズマドーピング装置、プラズマドーピング方法、半導体素子の製造方法、および半導体素子 |
| US20150132929A1 (en) * | 2012-05-01 | 2015-05-14 | Tokyo Electron Limited | Method for injecting dopant into substrate to be processed, and plasma doping apparatus |
| EP2885868A4 (en) | 2012-08-16 | 2016-04-13 | Bayer Ip Gmbh | LAMINATED AND COMPLIANT DIELECTRIC ELASTOMER ACTUATORS |
| EP2917945B1 (en) * | 2012-11-06 | 2019-01-09 | Parker-Hannifin Corporation | Stacked electroactive transducer and fabrication method thereof |
| CN104347411B (zh) * | 2013-08-01 | 2018-04-13 | 中国科学院微电子研究所 | 金属栅电极等效功函数调节方法 |
| TWI590329B (zh) * | 2014-03-02 | 2017-07-01 | 東京威力科創股份有限公司 | 藉由微波電漿處理以提升半導體裝置中之高介電常數膜成核速率及電移動度的方法 |
| US20180138292A1 (en) * | 2016-11-11 | 2018-05-17 | Sandisk Technologies Llc | Methods and apparatus for three-dimensional nonvolatile memory |
| US10431462B2 (en) * | 2017-02-15 | 2019-10-01 | Lam Research Corporation | Plasma assisted doping on germanium |
| US10332747B1 (en) | 2018-01-24 | 2019-06-25 | Globalfoundries Inc. | Selective titanium nitride deposition using oxides of lanthanum masks |
| JP2021048239A (ja) | 2019-09-18 | 2021-03-25 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| US11355325B2 (en) * | 2020-05-28 | 2022-06-07 | Applied Materials, Inc. | Methods and systems for monitoring input power for process control in semiconductor process systems |
| US11854770B2 (en) * | 2021-01-14 | 2023-12-26 | Applied Materials, Inc. | Plasma processing with independent temperature control |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6841203B2 (en) * | 1997-12-24 | 2005-01-11 | Tokyo Electron Limited | Method of forming titanium film by CVD |
| US6285038B1 (en) * | 2000-03-01 | 2001-09-04 | Micron Technology, Inc. | Integrated circuitry and DRAM integrated circuitry |
| TW445540B (en) * | 2000-08-07 | 2001-07-11 | Nano Architect Res Corp | Bundle concentrating type multi-chamber plasma reacting system |
| US6383880B1 (en) * | 2000-10-05 | 2002-05-07 | Advanced Micro Devices, Inc. | NH3/N2-plasma treatment for reduced nickel silicide bridging |
| JP4090225B2 (ja) * | 2001-08-29 | 2008-05-28 | 東京エレクトロン株式会社 | 半導体装置の製造方法、及び、基板処理方法 |
| JP4198903B2 (ja) * | 2001-08-31 | 2008-12-17 | 株式会社東芝 | 半導体記憶装置 |
| JP4001498B2 (ja) * | 2002-03-29 | 2007-10-31 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜の形成システム |
| JP4387355B2 (ja) * | 2003-02-19 | 2009-12-16 | パナソニック株式会社 | 不純物導入方法 |
| US7015534B2 (en) * | 2003-10-14 | 2006-03-21 | Texas Instruments Incorporated | Encapsulated MOS transistor gate structures and methods for making the same |
| US6936518B2 (en) * | 2004-01-21 | 2005-08-30 | Intel Corporation | Creating shallow junction transistors |
| US7514360B2 (en) * | 2004-03-17 | 2009-04-07 | Hong Yu Yu | Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof |
-
2005
- 2005-01-31 US US11/045,124 patent/US7393761B2/en not_active Expired - Lifetime
- 2005-11-30 WO PCT/US2005/043293 patent/WO2006083380A2/en not_active Ceased
- 2005-11-30 KR KR1020077014095A patent/KR101161468B1/ko not_active Expired - Fee Related
- 2005-11-30 CN CN2005800474755A patent/CN101128922B/zh not_active Expired - Fee Related
- 2005-11-30 JP JP2007553093A patent/JP5042038B2/ja not_active Expired - Fee Related
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