JP2008524869A5 - - Google Patents
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- JP2008524869A5 JP2008524869A5 JP2007548262A JP2007548262A JP2008524869A5 JP 2008524869 A5 JP2008524869 A5 JP 2008524869A5 JP 2007548262 A JP2007548262 A JP 2007548262A JP 2007548262 A JP2007548262 A JP 2007548262A JP 2008524869 A5 JP2008524869 A5 JP 2008524869A5
- Authority
- JP
- Japan
- Prior art keywords
- article
- thin film
- substituted
- arylalkyl
- substituent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052757 nitrogen Inorganic materials 0.000 claims 5
- 125000001424 substituent group Chemical group 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- 125000003710 aryl alkyl group Chemical group 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- 125000002837 carbocyclic group Chemical group 0.000 claims 2
- 229910000071 diazene Inorganic materials 0.000 claims 2
- -1 diimide compound Chemical class 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 125000002080 perylenyl group Chemical class C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 125000000962 organic group Chemical group 0.000 claims 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 claims 1
Claims (3)
- 二価炭化水素基を介して各イミド窒素原子に結合された置換型又は無置換型の炭素環式芳香環系を有する、N,N'-ジ(アリールアルキル)-置換型ペリレン系テトラカルボン酸ジイミド化合物を含む有機半導体材料から成る薄膜を、薄膜トランジスタ内に含んで成る物品であって、各炭素環式芳香環系上に置換基がある場合は、該置換基は、少なくとも１つの電子供与性有機置換基を含む。
- 該有機半導体材料薄膜が、下記構造：
によって表されるN,N'-ジ(アリールアルキル)-置換型3,4,9,10ペリレン系テトラカルボン酸ジイミド化合物である化合物を含む請求項1に記載の物品。 - 前記構造内で、n＝1又は2であり、R1、R2、R3、R4、及びR5のうちの少なくとも2つがHであり、そしてR6、R7、R8、R9、及びR10のうちの少なくとも2つがHである請求項1に記載の物品。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/021,739 US7198977B2 (en) | 2004-12-21 | 2004-12-21 | N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
| PCT/US2005/044241 WO2006068833A2 (en) | 2004-12-21 | 2005-12-06 | N-type semiconductor materials for thin film transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008524869A JP2008524869A (ja) | 2008-07-10 |
| JP2008524869A5 true JP2008524869A5 (ja) | 2008-12-11 |
Family
ID=36596468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007548262A Pending JP2008524869A (ja) | 2004-12-21 | 2005-12-06 | 薄膜トランジスタのためのｎ型半導体材料 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7198977B2 (ja) |
| EP (1) | EP1829133A2 (ja) |
| JP (1) | JP2008524869A (ja) |
| KR (1) | KR20070095907A (ja) |
| CN (1) | CN101084590B (ja) |
| TW (1) | TWI423493B (ja) |
| WO (1) | WO2006068833A2 (ja) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005076815A2 (en) * | 2004-01-26 | 2005-08-25 | Northwestern University | PERYLENE n-TYPE SEMICONDUCTORS AND RELATED DEVICES |
| US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
| WO2007146250A2 (en) * | 2006-06-12 | 2007-12-21 | Northwestern University | Naphthalene-based semiconductor materials and methods of preparing and use thereof |
| US20080087878A1 (en) * | 2006-10-17 | 2008-04-17 | Basf Akiengesellschaft | Use of perylene diimide derivatives as air-stable n-channel organic semiconductors |
| US20080054258A1 (en) * | 2006-08-11 | 2008-03-06 | Basf Aktiengesellschaft | Use of perylene diimide derivatives as air-stable n-channel organic semiconductors |
| US7947837B2 (en) * | 2006-10-25 | 2011-05-24 | Polyera Corporation | Organic semiconductor materials and methods of preparing and use thereof |
| US7902363B2 (en) | 2006-11-17 | 2011-03-08 | Polyera Corporation | Diimide-based semiconductor materials and methods of preparing and using the same |
| EP2104676A2 (en) * | 2007-01-08 | 2009-09-30 | Polyera Corporation | Methods for preparing arene-bis(dicarboximide)-based semiconducting materials and related intermediates for preparing same |
| WO2008091670A2 (en) * | 2007-01-24 | 2008-07-31 | Polyera Corporation | Organic semiconductor materials and precursors thereof |
| KR101529358B1 (ko) * | 2008-02-05 | 2015-06-16 | 바스프 에스이 | 나프탈렌-이미드 반도체 중합체 |
| US7649199B2 (en) * | 2008-04-11 | 2010-01-19 | Eastman Kodak Company | N-type semiconductor materials in thin film transistors and electronic devices |
| KR101367129B1 (ko) | 2008-07-08 | 2014-02-25 | 삼성전자주식회사 | 씬 필름 트랜지스터 및 그 제조 방법 |
| US20120091449A1 (en) * | 2009-06-23 | 2012-04-19 | Sumitomo Chemical Company, Limited | Organic electroluminescent element |
| EP2495780B1 (en) * | 2009-10-29 | 2016-12-14 | Dainichiseika Color & Chemicals Mfg. Co., Ltd. | Organic semiconductor material, organic semiconductor thin film, and organic thin film transistor |
| DE102010009903A1 (de) * | 2010-03-02 | 2011-09-08 | Merck Patent Gmbh | Verbindungen für elektronische Vorrichtungen |
| US8283469B2 (en) * | 2010-03-24 | 2012-10-09 | National Tsing Hua University | Perylene diimide derivative and organic semiconductor element using the same material |
| CN102234366B (zh) * | 2010-04-29 | 2013-01-23 | 海洋王照明科技股份有限公司 | 含噻吩单元苝四羧酸二酰亚胺共聚物及其制备方法和应用 |
| US8314265B2 (en) | 2010-04-30 | 2012-11-20 | Eastman Kodak Company | Aromatic amic acids or amic esters and compositions |
| US20110269966A1 (en) | 2010-04-30 | 2011-11-03 | Deepak Shukla | Semiconducting articles |
| US8530270B2 (en) | 2010-04-30 | 2013-09-10 | Eastman Kodak Company | Methods of preparing semiconductive compositions and devices |
| US8411489B2 (en) | 2010-04-30 | 2013-04-02 | Eastman Kodak Company | Semiconducting devices and methods of preparing |
| US8404892B2 (en) | 2010-05-27 | 2013-03-26 | Eastman Kodak Company | Aromatic amic acid salts and compositions |
| KR101473124B1 (ko) | 2010-08-29 | 2014-12-15 | 고쿠리츠 다이가쿠 호우징 신슈 다이가쿠 | 유기 반도체 미립자 재료, 유기 반도체 박막, 유기 반도체막 형성용 분산액, 유기 반도체 박막의 제조 방법 및 유기 박막 트랜지스터 |
| WO2014100961A1 (en) * | 2012-12-24 | 2014-07-03 | Rhodia Operations | Use of compounds of the perylene type as acceptors in photovoltaics |
| KR102576999B1 (ko) * | 2016-07-05 | 2023-09-12 | 삼성디스플레이 주식회사 | 액정표시장치 |
| JP7464397B2 (ja) | 2020-01-31 | 2024-04-09 | 保土谷化学工業株式会社 | ペリレン誘導体化合物、該化合物を用いた有機半導体用組成物、該有機半導体用組成物を用いた有機薄膜トランジスタ |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2636421A1 (de) * | 1976-08-13 | 1978-02-16 | Basf Ag | Elektrisch leitfaehige perylenderivate |
| US4746741A (en) * | 1986-06-19 | 1988-05-24 | Eastman Kodak Company | N,N'-bis[2-(3-methylphenyl)ethyl]-perylene-3,4:9,10-bis (dicarboximide) compound use thereof in multi-active photoconductive insulating elements exhibiting far red sensitivity |
| US4719163A (en) * | 1986-06-19 | 1988-01-12 | Eastman Kodak Company | Multi-active photoconductive insulating elements exhibiting far red sensitivity |
| FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
| US5981970A (en) | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
| DE69839010T2 (de) * | 1997-04-29 | 2009-01-02 | Ciba Holding Inc. | Beschreibbare und löschbare optische aufzeichnungsmedien mit hoher dichte |
| US6387727B1 (en) | 1999-03-29 | 2002-05-14 | Agere Systems Guardian Corp. | Device comprising n-channel semiconductor material |
| US6635507B1 (en) | 1999-07-14 | 2003-10-21 | Hughes Electronics Corporation | Monolithic bypass-diode and solar-cell string assembly |
| DE10024993A1 (de) * | 2000-05-22 | 2001-11-29 | Univ Bremen | Elektrisches Bauelement und Verfahren zu seiner Herstellung |
| GB0028867D0 (en) * | 2000-11-28 | 2001-01-10 | Avecia Ltd | Field effect translators,methods for the manufacture thereof and materials therefor |
| JP3426211B2 (ja) * | 2000-12-19 | 2003-07-14 | 科学技術振興事業団 | 高速応答光電流増倍装置 |
| JP2002289878A (ja) * | 2001-03-26 | 2002-10-04 | Pioneer Electronic Corp | 有機半導体ダイオード |
| US7026643B2 (en) * | 2001-05-04 | 2006-04-11 | International Business Machines Corporation | Organic n-channel semiconductor device of N,N' 3,4,9,10 perylene tetracarboxylic diimide |
| JP2003041145A (ja) * | 2001-07-27 | 2003-02-13 | Yokohama Tlo Co Ltd | 黒色ペリレン系顔料およびその製造方法 |
| DE10218618A1 (de) * | 2002-04-25 | 2003-11-06 | Basf Ag | Verfahren zur Herstellung von Perylen-3,4:9,10-tetracarbonsäuredimiden und Perylen-3,4:9,10-tetracarbonsäuredianhydrid sowie von Naphthalin-1,8-dicarbonsäureimiden |
| US7090929B2 (en) * | 2002-07-30 | 2006-08-15 | E.I. Du Pont De Nemours And Company | Metallic complexes covalently bound to conjugated polymers and electronic devices containing such compositions |
| EP1529317A2 (en) * | 2002-08-06 | 2005-05-11 | Avecia Limited | Organic electronic devices |
| JP4340428B2 (ja) * | 2002-09-20 | 2009-10-07 | 国立大学法人京都大学 | 半導体装置およびその製造方法 |
| JP2004247716A (ja) * | 2003-01-23 | 2004-09-02 | Mitsubishi Chemicals Corp | 積層体の製造方法 |
| WO2005076815A2 (en) | 2004-01-26 | 2005-08-25 | Northwestern University | PERYLENE n-TYPE SEMICONDUCTORS AND RELATED DEVICES |
| US7326956B2 (en) * | 2004-12-17 | 2008-02-05 | Eastman Kodak Company | Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors |
-
2004
- 2004-12-21 US US11/021,739 patent/US7198977B2/en active Active
-
2005
- 2005-12-06 JP JP2007548262A patent/JP2008524869A/ja active Pending
- 2005-12-06 EP EP05853225A patent/EP1829133A2/en not_active Withdrawn
- 2005-12-06 KR KR1020077013932A patent/KR20070095907A/ko not_active Application Discontinuation
- 2005-12-06 WO PCT/US2005/044241 patent/WO2006068833A2/en active Application Filing
- 2005-12-06 CN CN2005800441323A patent/CN101084590B/zh not_active Expired - Fee Related
- 2005-12-20 TW TW094145190A patent/TWI423493B/zh not_active IP Right Cessation
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