JP2008538653A5 - - Google Patents

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Publication number
JP2008538653A5
JP2008538653A5 JP2008507692A JP2008507692A JP2008538653A5 JP 2008538653 A5 JP2008538653 A5 JP 2008538653A5 JP 2008507692 A JP2008507692 A JP 2008507692A JP 2008507692 A JP2008507692 A JP 2008507692A JP 2008538653 A5 JP2008538653 A5 JP 2008538653A5
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JP
Japan
Prior art keywords
ring system
semiconductor material
organic semiconductor
substituted
thin film
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Pending
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JP2008507692A
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JP2008538653A (ja
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Priority claimed from US11/110,076 external-priority patent/US7579619B2/en
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Publication of JP2008538653A publication Critical patent/JP2008538653A/ja
Publication of JP2008538653A5 publication Critical patent/JP2008538653A5/ja
Pending legal-status Critical Current

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Claims (3)

  1. 薄膜トランジスタの中に有機半導体材料からなる薄膜を含む物品であって、該有機半導体材料は、2価の炭化水素基を介して各イミド窒素原子に結合した置換されたまたは置換されていない芳香族炭素環系を有するN,N’-ジ(アリールアルキル)置換ナフタレンテトラカルボン酸ジイミド化合物を含み、各芳香族炭素環系上の置換基は、存在している場合には、独立して選択された電子供与性有機置換基である物品。
  2. 有機半導体材料からなる上記薄膜が、以下の構造式：
    Figure 2008538653
     で表わされるN,N’-ジ(アリールアルキル)置換1,4,5,8-ナフタレンテトラカルボン酸ジイミド化合物を含む（ただし、Xは2価の-CH2-基またはアルキル置換された2価の-CH2-基であり、nは1、2、3のいずれかであり、この構造式に含まれる第1の環系上と第2の環系上のR1、R2、R3、R4、R5、R6、R7、R8、R9、R10は、それぞれ独立に、Hまたは電子供与性有機基であり、場合によってはその第1の環系上または第2の環系上の隣り合った2つの基が縮合芳香族環を形成することができる）、請求項1に記載の物品。
  3. 薄膜半導体デバイスを製造する方法であって、
    必ずしも以下の順番ではなくてもよいが、
    （a）基板上に、nチャネル有機半導体材料からなる薄膜（該nチャネル有機半導体材料は、2価の炭化水素基を介して各イミド窒素原子に結合した置換されたまたは置換されていない芳香族炭素環系を有するN,N’-ジ(アリールアルキル)置換ナフタレンテトラカルボン酸ジイミド化合物を含み、各芳香族炭素環系上の置換基は、存在している場合には、電子供与性有機基である）を堆積させ、該有機半導体材料が、0.01cm2/V秒よりも大きな電界効果電子易動度を示すようにするステップと；
    （b）上記nチャネル半導体膜によって分離されているが、その半導体膜に電気的に接続された、互いに離れたソース電極とドレイン電極を形成するステップと；
    （c）上記有機半導体材料と離してゲート電極を形成するステップを含む方法。
JP2008507692A 2005-04-20 2006-04-05 薄膜トランジスタのための半導体材料 Pending JP2008538653A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/110,076 US7579619B2 (en) 2005-04-20 2005-04-20 N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
PCT/US2006/012520 WO2006115714A1 (en) 2005-04-20 2006-04-05 Semiconductor materials for thin film transistors

Publications (2)

Publication Number Publication Date
JP2008538653A JP2008538653A (ja) 2008-10-30
JP2008538653A5 true JP2008538653A5 (ja) 2009-07-02

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JP2008507692A Pending JP2008538653A (ja) 2005-04-20 2006-04-05 薄膜トランジスタのための半導体材料

Country Status (7)

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US (2) US7579619B2 (ja)
EP (1) EP1872416B1 (ja)
JP (1) JP2008538653A (ja)
KR (1) KR20080003813A (ja)
DE (1) DE602006014128D1 (ja)
TW (1) TW200644304A (ja)
WO (1) WO2006115714A1 (ja)

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US8314265B2 (en) 2010-04-30 2012-11-20 Eastman Kodak Company Aromatic amic acids or amic esters and compositions
US20110269966A1 (en) 2010-04-30 2011-11-03 Deepak Shukla Semiconducting articles
US8411489B2 (en) 2010-04-30 2013-04-02 Eastman Kodak Company Semiconducting devices and methods of preparing
US8530270B2 (en) 2010-04-30 2013-09-10 Eastman Kodak Company Methods of preparing semiconductive compositions and devices
US8450726B2 (en) 2010-05-27 2013-05-28 Eastman Kodak Company Articles containing coatings of amic acid salts
US8404892B2 (en) 2010-05-27 2013-03-26 Eastman Kodak Company Aromatic amic acid salts and compositions
US8431433B2 (en) 2010-05-27 2013-04-30 Eastman Kodak Company Methods of providing semiconductor layers from amic acid salts
US8692238B2 (en) 2012-04-25 2014-04-08 Eastman Kodak Company Semiconductor devices and methods of preparation
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