JP2008517468A5 - - Google Patents

Download PDF

Info

Publication number
JP2008517468A5
JP2008517468A5 JP2007536993A JP2007536993A JP2008517468A5 JP 2008517468 A5 JP2008517468 A5 JP 2008517468A5 JP 2007536993 A JP2007536993 A JP 2007536993A JP 2007536993 A JP2007536993 A JP 2007536993A JP 2008517468 A5 JP2008517468 A5 JP 2008517468A5
Authority
JP
Japan
Prior art keywords
nanowire
contact
electronic device
core
nanowires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007536993A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008517468A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2005/037237 external-priority patent/WO2007030126A2/en
Publication of JP2008517468A publication Critical patent/JP2008517468A/ja
Publication of JP2008517468A5 publication Critical patent/JP2008517468A5/ja
Pending legal-status Critical Current

Links

JP2007536993A 2004-10-15 2005-10-14 ナノワイヤを基礎にした電子デバイスにおけるゲート開閉形態および改良された接点のための方法、システム、および装置 Pending JP2008517468A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61876204P 2004-10-15 2004-10-15
PCT/US2005/037237 WO2007030126A2 (en) 2004-10-15 2005-10-14 Method, system, and apparatus for gating configurations and improved contacts in nanowire-based electronic devices

Publications (2)

Publication Number Publication Date
JP2008517468A JP2008517468A (ja) 2008-05-22
JP2008517468A5 true JP2008517468A5 (cg-RX-API-DMAC7.html) 2008-11-06

Family

ID=37836293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007536993A Pending JP2008517468A (ja) 2004-10-15 2005-10-14 ナノワイヤを基礎にした電子デバイスにおけるゲート開閉形態および改良された接点のための方法、システム、および装置

Country Status (8)

Country Link
US (3) US7473943B2 (cg-RX-API-DMAC7.html)
EP (1) EP1810340A2 (cg-RX-API-DMAC7.html)
JP (1) JP2008517468A (cg-RX-API-DMAC7.html)
KR (1) KR20070063597A (cg-RX-API-DMAC7.html)
CN (1) CN101401210B (cg-RX-API-DMAC7.html)
AU (1) AU2005336130B2 (cg-RX-API-DMAC7.html)
CA (1) CA2589432C (cg-RX-API-DMAC7.html)
WO (1) WO2007030126A2 (cg-RX-API-DMAC7.html)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US9056783B2 (en) * 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US8958917B2 (en) * 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US20110125412A1 (en) * 1998-12-17 2011-05-26 Hach Company Remote monitoring of carbon nanotube sensor
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
US7473943B2 (en) * 2004-10-15 2009-01-06 Nanosys, Inc. Gate configuration for nanowire electronic devices
US8883568B2 (en) * 2008-06-10 2014-11-11 Brown University Research Foundation Method providing radial addressing of nanowires
US8072005B2 (en) * 2005-02-04 2011-12-06 Brown University Research Foundation Apparatus, method and computer program product providing radial addressing of nanowires
KR101100887B1 (ko) * 2005-03-17 2012-01-02 삼성전자주식회사 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
US20060231237A1 (en) * 2005-03-21 2006-10-19 Carlos Dangelo Apparatus and method for cooling ICs using nano-rod based chip-level heat sinks
CA2603352C (en) * 2005-04-06 2013-10-01 Jene Golovchenko Molecular characterization with carbon nanotube control
US7649665B2 (en) * 2005-08-24 2010-01-19 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
US7906803B2 (en) * 2005-12-06 2011-03-15 Canon Kabushiki Kaisha Nano-wire capacitor and circuit device therewith
US8119032B2 (en) 2006-02-07 2012-02-21 President And Fellows Of Harvard College Gas-phase functionalization of surfaces including carbon-based surfaces
EP1999067B1 (en) * 2006-02-07 2014-04-09 President and Fellows of Harvard College Gas-phase functionalization of carbon nanotubes
WO2008018726A1 (en) * 2006-08-07 2008-02-14 Seoul National University Industry Foundation Nanostructure sensors
US7667260B2 (en) * 2006-08-09 2010-02-23 Micron Technology, Inc. Nanoscale floating gate and methods of formation
US7999251B2 (en) * 2006-09-11 2011-08-16 International Business Machines Corporation Nanowire MOSFET with doped epitaxial contacts for source and drain
US7858918B2 (en) * 2007-02-05 2010-12-28 Ludwig Lester F Molecular transistor circuits compatible with carbon nanotube sensors and transducers
US7838809B2 (en) * 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
US7923310B2 (en) * 2007-07-17 2011-04-12 Sharp Laboratories Of America, Inc. Core-shell-shell nanowire transistor and fabrication method
US20110275544A1 (en) * 2007-10-01 2011-11-10 University Of Southern California Microfluidic integration with nanosensor platform
US8188513B2 (en) * 2007-10-04 2012-05-29 Stc.Unm Nanowire and larger GaN based HEMTS
US20100204062A1 (en) * 2008-11-07 2010-08-12 University Of Southern California Calibration methods for multiplexed sensor arrays
WO2010071658A1 (en) * 2008-12-19 2010-06-24 Hewlett-Packard Development Company, Hewlett-Packard Development Company, L.P. Photovoltaic structure and method of fabrication employing nanowire on stub
FR2942660B1 (fr) * 2009-02-27 2011-04-01 Commissariat Energie Atomique Dispositif capteur a base de nanofils
EP2409327A1 (de) * 2009-03-20 2012-01-25 Microgan Gmbh Vertikal kontaktiertes elektronisches bauelement sowie verfahren zur herstellung eines solchen
WO2010115143A1 (en) * 2009-04-03 2010-10-07 University Of Southern California Surface modification of nanosensor platforms to increase sensitivity and reproducibility
US8368125B2 (en) * 2009-07-20 2013-02-05 International Business Machines Corporation Multiple orientation nanowires with gate stack stressors
WO2011010542A1 (en) * 2009-07-23 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8455334B2 (en) * 2009-12-04 2013-06-04 International Business Machines Corporation Planar and nanowire field effect transistors
US8143113B2 (en) 2009-12-04 2012-03-27 International Business Machines Corporation Omega shaped nanowire tunnel field effect transistors fabrication
US8173993B2 (en) * 2009-12-04 2012-05-08 International Business Machines Corporation Gate-all-around nanowire tunnel field effect transistors
US8384065B2 (en) * 2009-12-04 2013-02-26 International Business Machines Corporation Gate-all-around nanowire field effect transistors
US8129247B2 (en) 2009-12-04 2012-03-06 International Business Machines Corporation Omega shaped nanowire field effect transistors
US8368123B2 (en) * 2009-12-23 2013-02-05 Nokia Corporation Apparatus for sensing an event
US8722492B2 (en) 2010-01-08 2014-05-13 International Business Machines Corporation Nanowire pin tunnel field effect devices
US8324940B2 (en) 2010-04-13 2012-12-04 International Business Machines Corporation Nanowire circuits in matched devices
US8361907B2 (en) 2010-05-10 2013-01-29 International Business Machines Corporation Directionally etched nanowire field effect transistors
US8324030B2 (en) 2010-05-12 2012-12-04 International Business Machines Corporation Nanowire tunnel field effect transistors
US8394710B2 (en) * 2010-06-21 2013-03-12 International Business Machines Corporation Semiconductor devices fabricated by doped material layer as dopant source
US8680510B2 (en) * 2010-06-28 2014-03-25 International Business Machines Corporation Method of forming compound semiconductor
US8298881B2 (en) * 2010-06-28 2012-10-30 International Business Machines Corporation Nanowire FET with trapezoid gate structure
US8835231B2 (en) 2010-08-16 2014-09-16 International Business Machines Corporation Methods of forming contacts for nanowire field effect transistors
US8536563B2 (en) 2010-09-17 2013-09-17 International Business Machines Corporation Nanowire field effect transistors
TWI565063B (zh) * 2010-10-01 2017-01-01 應用材料股份有限公司 用在薄膜電晶體應用中的砷化鎵類的材料
US9040364B2 (en) * 2012-10-30 2015-05-26 International Business Machines Corporation Carbon nanotube devices with unzipped low-resistance contacts
US20150243837A1 (en) * 2013-03-15 2015-08-27 Moonsub Shim Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
CN104979403A (zh) * 2015-05-20 2015-10-14 北京大学 导电沟道全包裹纳米线平面环栅场效应器件及其制备方法
US10396300B2 (en) * 2015-12-03 2019-08-27 International Business Machines Corporation Carbon nanotube device with N-type end-bonded metal contacts
CN108091569A (zh) * 2016-11-23 2018-05-29 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
US10985164B1 (en) * 2019-09-27 2021-04-20 Nanya Technology Corporation Semiconductor device with nanowire contact and method for fabricating the same

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962863A (en) 1993-09-09 1999-10-05 The United States Of America As Represented By The Secretary Of The Navy Laterally disposed nanostructures of silicon on an insulating substrate
JP3460863B2 (ja) * 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
EP0661733A2 (en) 1993-12-21 1995-07-05 International Business Machines Corporation One dimensional silicon quantum wire devices and the method of manufacture thereof
US5920078A (en) 1996-06-20 1999-07-06 Frey; Jeffrey Optoelectronic device using indirect-bandgap semiconductor material
ATE256092T1 (de) * 1996-07-31 2003-12-15 Shionogi & Co Neue p-terphenyl verbindungen
JPH1197691A (ja) * 1997-09-18 1999-04-09 Toshiba Corp 薄膜トランジスタおよび接合構造
KR100277881B1 (ko) 1998-06-16 2001-02-01 김영환 트랜지스터
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6815218B1 (en) 1999-06-09 2004-11-09 Massachusetts Institute Of Technology Methods for manufacturing bioelectronic devices
EP1194960B1 (en) 1999-07-02 2010-09-15 President and Fellows of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6438025B1 (en) 1999-09-08 2002-08-20 Sergei Skarupo Magnetic memory device
ATE494261T1 (de) 1999-10-27 2011-01-15 Univ Rice William M Makroskopische geordnete anordnung von kohlenstoffnanoröhren
RU2173003C2 (ru) 1999-11-25 2001-08-27 Септре Электроникс Лимитед Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
KR100360476B1 (ko) 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
US6586785B2 (en) 2000-06-29 2003-07-01 California Institute Of Technology Aerosol silicon nanoparticles for use in semiconductor device fabrication
WO2002003482A1 (de) 2000-07-04 2002-01-10 Infineon Technologies Ag Feldeffekttransistor
US6447663B1 (en) 2000-08-01 2002-09-10 Ut-Battelle, Llc Programmable nanometer-scale electrolytic metal deposition and depletion
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
EP1314189B1 (en) 2000-08-22 2013-02-27 President and Fellows of Harvard College Electrical device comprising doped semiconductor nanowires and method for its production
JP3386789B2 (ja) 2000-09-29 2003-03-17 富士通カンタムデバイス株式会社 半導体装置及びその製造方法
DE10060120B4 (de) * 2000-12-04 2005-12-22 Gkn Driveline International Gmbh Kugelgleichlaufgelenk als Gegenbahngelenk
WO2002048701A2 (en) 2000-12-11 2002-06-20 President And Fellows Of Harvard College Nanosensors
US6423583B1 (en) 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US6593065B2 (en) 2001-03-12 2003-07-15 California Institute Of Technology Method of fabricating nanometer-scale flowchannels and trenches with self-aligned electrodes and the structures formed by the same
CN1306619C (zh) 2001-03-30 2007-03-21 加利福尼亚大学董事会 纳米线以及由其制造的器件
US7084507B2 (en) 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
US6787179B2 (en) * 2001-06-29 2004-09-07 Ethicon, Inc. Sterilization of bioactive coatings
JP2003017508A (ja) 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
US6896864B2 (en) 2001-07-10 2005-05-24 Battelle Memorial Institute Spatial localization of dispersed single walled carbon nanotubes into useful structures
US6672925B2 (en) 2001-08-17 2004-01-06 Motorola, Inc. Vacuum microelectronic device and method
NZ513637A (en) 2001-08-20 2004-02-27 Canterprise Ltd Nanoscale electronic devices & fabrication methods
JP2005501404A (ja) 2001-08-30 2005-01-13 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 磁気抵抗装置および電子装置
JP2003108021A (ja) 2001-09-28 2003-04-11 Hitachi Ltd 表示装置
US7385262B2 (en) * 2001-11-27 2008-06-10 The Board Of Trustees Of The Leland Stanford Junior University Band-structure modulation of nano-structures in an electric field
US20040005258A1 (en) 2001-12-12 2004-01-08 Fonash Stephen J. Chemical reactor templates: sacrificial layer fabrication and template use
US7049625B2 (en) 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20030189202A1 (en) 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
US6760245B2 (en) 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
WO2004010552A1 (en) 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
US7358121B2 (en) 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US7115916B2 (en) 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
EP1563555A4 (en) * 2002-09-30 2009-08-26 Nanosys Inc APPLICATION OF NANO-PREPARED LARGE-MIXED MACROELECTRONIC SUBSTRATES WITH NANO LINES AND NANO-LEADING COMPOSITIONS
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
JP3790238B2 (ja) * 2002-12-27 2006-06-28 株式会社東芝 半導体装置
US6918284B2 (en) 2003-03-24 2005-07-19 The United States Of America As Represented By The Secretary Of The Navy Interconnected networks of single-walled carbon nanotubes
US6916195B2 (en) * 2003-03-26 2005-07-12 Intel Corporation Land grid array socket loading device
US7323730B2 (en) * 2004-07-21 2008-01-29 Commissariat A L'energie Atomique Optically-configurable nanotube or nanowire semiconductor device
US7473943B2 (en) * 2004-10-15 2009-01-06 Nanosys, Inc. Gate configuration for nanowire electronic devices

Similar Documents

Publication Publication Date Title
JP2008517468A5 (cg-RX-API-DMAC7.html)
US8344358B2 (en) Graphene transistor with a self-aligned gate
CN103107199B (zh) 半导体结构和形成场效应晶体管的方法
JP4922373B2 (ja) 半導体装置およびその製造方法
US7015142B2 (en) Patterned thin film graphite devices and method for making same
CN102738237B (zh) 石墨烯电子器件及其制造方法
JP4991814B2 (ja) 半導体装置およびその製造方法
CN103227103B (zh) 石墨烯晶体管以及制造石墨烯器件的方法
JP2007311584A5 (cg-RX-API-DMAC7.html)
JP2006524436A5 (cg-RX-API-DMAC7.html)
JP2020519013A (ja) Ｎｆｅｔ及びｐｆｅｔナノワイヤデバイスを製造する方法
JP2008512875A5 (cg-RX-API-DMAC7.html)
JP2006352087A5 (cg-RX-API-DMAC7.html)
CN102915929A (zh) 一种石墨烯场效应器件制备方法
ATE515791T1 (de) Herstellungsverfahren für eine halbleitervorrichtung
TWI527220B (zh) 自對準碳化物源極／汲極場效電晶體
US8795772B2 (en) Method of forming nano-pads of catalytic metal for growth of single walled carbon nanotubes
CN105304501B (zh) 一种制备三维环栅结构半导体场效应晶体管器件的方法
TWI419233B (zh) 圖案化金屬層製作方法
US20170170012A1 (en) Method of intercalating insulating layer between metal catalyst layer and graphene layer and method of fabricating semiconductor device using the same
US9129882B2 (en) Method of fabricating graphene nano device
JP2005142481A5 (cg-RX-API-DMAC7.html)
JP2015154006A (ja) 半導体装置及びその製造方法
CN113644111B (zh) 晶体管及制作方法
CN110729358B (zh) 薄膜晶体管及其制造方法