JP2008515654A5 - - Google Patents

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Publication number
JP2008515654A5
JP2008515654A5 JP2007536710A JP2007536710A JP2008515654A5 JP 2008515654 A5 JP2008515654 A5 JP 2008515654A5 JP 2007536710 A JP2007536710 A JP 2007536710A JP 2007536710 A JP2007536710 A JP 2007536710A JP 2008515654 A5 JP2008515654 A5 JP 2008515654A5
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JP
Japan
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nanowire
conductive polymer
polymer layer
substrate
thin film
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JP2007536710A
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Japanese (ja)
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JP2008515654A (ja
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Priority claimed from PCT/US2005/034394 external-priority patent/WO2006124055A2/en
Publication of JP2008515654A publication Critical patent/JP2008515654A/ja
Publication of JP2008515654A5 publication Critical patent/JP2008515654A5/ja
Pending legal-status Critical Current

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JP2007536710A 2004-10-12 2005-09-22 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス Pending JP2008515654A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US61783004P 2004-10-12 2004-10-12
PCT/US2005/034394 WO2006124055A2 (en) 2004-10-12 2005-09-22 Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires

Publications (2)

Publication Number Publication Date
JP2008515654A JP2008515654A (ja) 2008-05-15
JP2008515654A5 true JP2008515654A5 (https=) 2008-11-06

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JP2007536710A Pending JP2008515654A (ja) 2004-10-12 2005-09-22 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス

Country Status (4)

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US (2) US7345307B2 (https=)
EP (1) EP1805823A2 (https=)
JP (1) JP2008515654A (https=)
WO (1) WO2006124055A2 (https=)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8958917B2 (en) * 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US20110125412A1 (en) * 1998-12-17 2011-05-26 Hach Company Remote monitoring of carbon nanotube sensor
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US9056783B2 (en) * 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
WO2001017320A1 (en) 1999-08-27 2001-03-08 Lex Kosowsky Current carrying structure using voltage switchable dielectric material
US20100038119A1 (en) * 1999-08-27 2010-02-18 Lex Kosowsky Metal Deposition
US20100038121A1 (en) * 1999-08-27 2010-02-18 Lex Kosowsky Metal Deposition
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
US7557433B2 (en) 2004-10-25 2009-07-07 Mccain Joseph H Microelectronic device with integrated energy source
KR100708644B1 (ko) * 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
JP4856900B2 (ja) * 2005-06-13 2012-01-18 パナソニック株式会社 電界効果トランジスタの製造方法
EP1938381A2 (en) * 2005-09-23 2008-07-02 Nanosys, Inc. Methods for nanostructure doping
US7492015B2 (en) * 2005-11-10 2009-02-17 International Business Machines Corporation Complementary carbon nanotube triple gate technology
CN101496167A (zh) 2005-11-22 2009-07-29 肖克科技有限公司 用于过电压保护的包括电压可变换材料的半导体器件
US20100264225A1 (en) * 2005-11-22 2010-10-21 Lex Kosowsky Wireless communication device using voltage switchable dielectric material
US7692610B2 (en) * 2005-11-30 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20070079744A (ko) * 2006-02-03 2007-08-08 삼성전자주식회사 반도체성 비율을 높인 탄소나노튜브를 이용한 유기 반도체소재, 유기 반도체 박막 및 이를 채용한 유기 반도체 소자
JP4574634B2 (ja) * 2006-04-03 2010-11-04 キヤノン株式会社 シリコンワイヤを含み構成される物品の製造方法
KR101206661B1 (ko) * 2006-06-02 2012-11-30 삼성전자주식회사 동일 계열의 소재로 형성된 반도체층 및 소스/드레인전극을 포함하는 유기 전자 소자
TWI412079B (zh) * 2006-07-28 2013-10-11 半導體能源研究所股份有限公司 製造顯示裝置的方法
US7943287B2 (en) * 2006-07-28 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US7981325B2 (en) 2006-07-29 2011-07-19 Shocking Technologies, Inc. Electronic device for voltage switchable dielectric material having high aspect ratio particles
US20080029405A1 (en) * 2006-07-29 2008-02-07 Lex Kosowsky Voltage switchable dielectric material having conductive or semi-conductive organic material
KR101346246B1 (ko) * 2006-08-24 2013-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148259B2 (en) 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2010504437A (ja) * 2006-09-24 2010-02-12 ショッキング テクノロジーズ インコーポレイテッド 電圧で切替可能な誘電体材料および光補助を用いた基板デバイスをメッキする技法
JP2010521058A (ja) 2006-09-24 2010-06-17 ショッキング テクノロジーズ,インコーポレイテッド ステップ電圧応答を有する電圧切り換え可能な誘電体材料の組成及び該誘電体材料の製造方法
CN101589473B (zh) 2006-10-12 2011-10-05 凯博瑞奥斯技术公司 基于纳米线的透明导体及其应用
US8018568B2 (en) 2006-10-12 2011-09-13 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
US20080210929A1 (en) * 2007-03-01 2008-09-04 Motorola, Inc. Organic Thin Film Transistor
KR101356238B1 (ko) * 2007-03-26 2014-01-28 삼성전자주식회사 Uv 패터닝 가능한 전도성 고분자 필름의 제조방법 및이에 의해 제조되는 전도성 고분자 필름
TWI556456B (zh) 2007-04-20 2016-11-01 坎畢歐科技公司 複合透明導體及形成其之方法
WO2008144762A2 (en) * 2007-05-21 2008-11-27 Plextronics, Inc. Organic electrodes and electronic devices
WO2008144759A2 (en) * 2007-05-21 2008-11-27 Plextronics, Inc. Organic electrodes and electronic devices
KR100861131B1 (ko) * 2007-05-23 2008-09-30 삼성전자주식회사 전도성 고분자를 이용한 이미지 형성체, 이의 제조 방법 및이를 이용한 이미지 형성장치
US20090047502A1 (en) * 2007-08-13 2009-02-19 Smart Nanomaterials, Llc Nano-enhanced modularly constructed composite panel
US20090050856A1 (en) * 2007-08-20 2009-02-26 Lex Kosowsky Voltage switchable dielectric material incorporating modified high aspect ratio particles
US20100224862A1 (en) * 2007-09-07 2010-09-09 Hiroyuki Endoh Carbon nanotube structure and thin film transistor
JP2011500184A (ja) * 2007-10-15 2011-01-06 ユニヴァルシテ カソリック デ ルーバン 薬物溶出ナノワイヤアレイ
KR100949375B1 (ko) * 2007-10-31 2010-03-25 포항공과대학교 산학협력단 미세 와이어 제조 방법, 그리고 미세 와이어를 포함하는 센서 제조 방법
FR2925226A1 (fr) * 2007-12-12 2009-06-19 Commissariat Energie Atomique Transistor organique ayant des objets nanometriques de forme filaire dans une matrice organique semi-conductrice et procede de realisation
US8206614B2 (en) 2008-01-18 2012-06-26 Shocking Technologies, Inc. Voltage switchable dielectric material having bonded particle constituents
JP5063500B2 (ja) 2008-02-08 2012-10-31 富士通コンポーネント株式会社 パネル型入力装置、パネル型入力装置の製造方法、及びパネル型入力装置を備えた電子機器
US20090220771A1 (en) * 2008-02-12 2009-09-03 Robert Fleming Voltage switchable dielectric material with superior physical properties for structural applications
JP4811533B2 (ja) * 2008-08-22 2011-11-09 日立化成工業株式会社 感光性導電フィルム、導電膜の形成方法、導電パターンの形成方法及び導電膜基板
KR20100035380A (ko) * 2008-09-26 2010-04-05 삼성전자주식회사 박막형 센싱부재를 이용한 화학 센서
US9208931B2 (en) 2008-09-30 2015-12-08 Littelfuse, Inc. Voltage switchable dielectric material containing conductor-on-conductor core shelled particles
EP2342722A2 (en) 2008-09-30 2011-07-13 Shocking Technologies Inc Voltage switchable dielectric material containing conductive core shelled particles
GB0821980D0 (en) * 2008-12-02 2009-01-07 Cambridge Entpr Ltd Optoelectronic device
US8399773B2 (en) 2009-01-27 2013-03-19 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US9226391B2 (en) 2009-01-27 2015-12-29 Littelfuse, Inc. Substrates having voltage switchable dielectric materials
US8272123B2 (en) 2009-01-27 2012-09-25 Shocking Technologies, Inc. Substrates having voltage switchable dielectric materials
US8968606B2 (en) 2009-03-26 2015-03-03 Littelfuse, Inc. Components having voltage switchable dielectric materials
CN102387880B (zh) 2009-04-10 2014-07-02 住友化学株式会社 金属复合体及其组合物
US8199045B1 (en) * 2009-04-13 2012-06-12 Exelis Inc. Nickel nanostrand ESD/conductive coating or composite
WO2010121130A2 (en) 2009-04-16 2010-10-21 President And Fellows Of Harvard College Molecular delivery with nanowires
SG10201403233XA (en) 2009-06-15 2014-10-30 Univ Rice William M Graphene nanoribbons prepared from carbon nanotubes via alkali metal exposure
WO2011106438A1 (en) * 2010-02-24 2011-09-01 Cambrios Technologies Corporation Nanowire-based transparent conductors and methods of patterning same
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
WO2011149991A1 (en) * 2010-05-24 2011-12-01 The Regents Of The University Of California Inorganic nanostructure-organic polymer heterostructures useful for thermoelectric devices
CN105396220A (zh) * 2010-09-29 2016-03-16 哈佛学院院长等 用纳米线的分子递送
CA2848400A1 (en) 2011-09-14 2013-03-21 William Marsh Rice University Solvent-based methods for production of graphene nanoribbons
CN104520946A (zh) 2012-01-27 2015-04-15 威廉马歇莱思大学 磁性碳纳米带和磁性功能化碳纳米带的合成
US8785909B2 (en) * 2012-09-27 2014-07-22 Intel Corporation Non-planar semiconductor device having channel region with low band-gap cladding layer
US8710490B2 (en) * 2012-09-27 2014-04-29 Intel Corporation Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
US8735869B2 (en) 2012-09-27 2014-05-27 Intel Corporation Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
KR101980198B1 (ko) * 2012-11-12 2019-05-21 삼성전자주식회사 신축성 트랜지스터용 채널층
CN104756273B (zh) 2012-11-20 2017-10-24 默克专利有限公司 用于制造电子器件的高纯度溶剂中的制剂
US8768271B1 (en) 2012-12-19 2014-07-01 Intel Corporation Group III-N transistors on nanoscale template structures
US9840418B2 (en) 2014-06-16 2017-12-12 William Marsh Rice University Production of graphene nanoplatelets by oxidative anhydrous acidic media
US20180169403A1 (en) 2015-01-09 2018-06-21 President And Fellows Of Harvard College Nanowire arrays for neurotechnology and other applications
US9748113B2 (en) * 2015-07-30 2017-08-29 Veeco Intruments Inc. Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
GB201517629D0 (en) * 2015-10-06 2015-11-18 Isis Innovation Device architecture
US10431758B2 (en) * 2016-10-10 2019-10-01 Boe Technology Group Co., Ltd. Thin film transistor, display panel and display apparatus having the same, and fabricating method thereof
CN106744669B (zh) * 2016-11-23 2019-01-04 宁波大学 一种基于波导器件的单根纳米线的转移方法
CN108459055B (zh) * 2017-02-20 2020-06-19 天津大学 聚吡咯表面修饰硅纳米线气敏元件及其应用
CN106876479B (zh) * 2017-04-19 2020-03-06 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板及其制备方法、显示面板
DE112019001953T5 (de) 2018-04-13 2021-01-21 Veeco Instruments Inc. Vorrichtung zur chemischen gasphasenabscheidung mit mehrzonen-injektorblock
US11165032B2 (en) * 2019-09-05 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor using carbon nanotubes
US10994387B1 (en) * 2020-09-09 2021-05-04 King Abdulaziz University Fabrication of flexible conductive films, with semiconductive material, formed with rubbing-in technology for elastic or deformable devices

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962863A (en) * 1993-09-09 1999-10-05 The United States Of America As Represented By The Secretary Of The Navy Laterally disposed nanostructures of silicon on an insulating substrate
WO1997049132A1 (en) * 1996-06-20 1997-12-24 Jeffrey Frey Light-emitting semiconductor device
KR100277881B1 (ko) * 1998-06-16 2001-02-01 김영환 트랜지스터
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6815218B1 (en) * 1999-06-09 2004-11-09 Massachusetts Institute Of Technology Methods for manufacturing bioelectronic devices
WO2001003208A1 (en) * 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6438025B1 (en) * 1999-09-08 2002-08-20 Sergei Skarupo Magnetic memory device
US6790425B1 (en) * 1999-10-27 2004-09-14 Wiliam Marsh Rice University Macroscopic ordered assembly of carbon nanotubes
RU2173003C2 (ru) * 1999-11-25 2001-08-27 Септре Электроникс Лимитед Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
WO2002003430A2 (en) * 2000-06-29 2002-01-10 California Institute Of Technology Aerosol process for fabricating discontinuous floating gate microelectronic devices
EP1299914B1 (de) * 2000-07-04 2008-04-02 Qimonda AG Feldeffekttransistor
US6447663B1 (en) * 2000-08-01 2002-09-10 Ut-Battelle, Llc Programmable nanometer-scale electrolytic metal deposition and depletion
CN101887935B (zh) 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
KR20030055346A (ko) 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
US6423583B1 (en) * 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US6593065B2 (en) * 2001-03-12 2003-07-15 California Institute Of Technology Method of fabricating nanometer-scale flowchannels and trenches with self-aligned electrodes and the structures formed by the same
EP1374309A1 (en) * 2001-03-30 2004-01-02 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
JP2003017508A (ja) * 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
US6896864B2 (en) * 2001-07-10 2005-05-24 Battelle Memorial Institute Spatial localization of dispersed single walled carbon nanotubes into useful structures
US6672925B2 (en) * 2001-08-17 2004-01-06 Motorola, Inc. Vacuum microelectronic device and method
NZ513637A (en) * 2001-08-20 2004-02-27 Canterprise Ltd Nanoscale electronic devices & fabrication methods
JP2005501404A (ja) * 2001-08-30 2005-01-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 磁気抵抗装置および電子装置
JP2003108021A (ja) * 2001-09-28 2003-04-11 Hitachi Ltd 表示装置
AU2002364157A1 (en) * 2001-12-12 2003-06-23 The Pennsylvania State University Chemical reactor templates: sacrificial layer fabrication and template use
US7956525B2 (en) * 2003-05-16 2011-06-07 Nanomix, Inc. Flexible nanostructure electronic devices
US6740900B2 (en) * 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
US7049625B2 (en) 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20030189202A1 (en) * 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
US6760245B2 (en) * 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
AU2003261205A1 (en) * 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
US7204388B2 (en) * 2002-08-14 2007-04-17 International Molded Packaging Corporation Latchable container system
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
EP1537445B1 (en) * 2002-09-05 2012-08-01 Nanosys, Inc. Nanocomposites
WO2004029128A2 (en) * 2002-09-24 2004-04-08 E.I. Du Pont De Nemours And Company Water dispersible polythiophenes made with polymeric acid colloids
US7115916B2 (en) * 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
CA2499965C (en) * 2002-09-30 2013-03-19 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
WO2004032191A2 (en) * 2002-09-30 2004-04-15 Nanosys, Inc. Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7068868B1 (en) * 2002-11-12 2006-06-27 Ifos, Inc. Sensing devices based on evanescent optical coupling
JP2004247716A (ja) * 2003-01-23 2004-09-02 Mitsubishi Chemicals Corp 積層体の製造方法
JP2007501525A (ja) * 2003-08-04 2007-01-25 ナノシス・インコーポレイテッド ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法
WO2005078770A2 (en) * 2003-12-19 2005-08-25 The Regents Of The University Of California Active electronic devices with nanowire composite components
CN101091266A (zh) * 2004-08-27 2007-12-19 杜邦公司 半导体渗滤网状物
US7960037B2 (en) * 2004-12-03 2011-06-14 The Regents Of The University Of California Carbon nanotube polymer composition and devices

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