JP2008515220A - Ｈｉｇｈ−ｋ層内に形態を形成する方法及びシステム - Google Patents

Ｈｉｇｈ−ｋ層内に形態を形成する方法及びシステム Download PDF

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Publication number
JP2008515220A
JP2008515220A JP2007534576A JP2007534576A JP2008515220A JP 2008515220 A JP2008515220 A JP 2008515220A JP 2007534576 A JP2007534576 A JP 2007534576A JP 2007534576 A JP2007534576 A JP 2007534576A JP 2008515220 A JP2008515220 A JP 2008515220A
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JP
Japan
Prior art keywords
layer
substrate
plasma
frequency power
interface layer
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JP2007534576A
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English (en)
Japanese (ja)
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JP2008515220A5 (https=
Inventor
高明輝
シャ、アニー
チェン、リー
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2008515220A publication Critical patent/JP2008515220A/ja
Publication of JP2008515220A5 publication Critical patent/JP2008515220A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2007534576A 2004-09-30 2005-08-10 Ｈｉｇｈ−ｋ層内に形態を形成する方法及びシステム Withdrawn JP2008515220A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/954,104 US7361608B2 (en) 2004-09-30 2004-09-30 Method and system for forming a feature in a high-k layer
PCT/US2005/028321 WO2006038974A2 (en) 2004-09-30 2005-08-10 A method and system for forming a feature in a high-k layer

Publications (2)

Publication Number Publication Date
JP2008515220A true JP2008515220A (ja) 2008-05-08
JP2008515220A5 JP2008515220A5 (https=) 2008-10-09

Family

ID=36098050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007534576A Withdrawn JP2008515220A (ja) 2004-09-30 2005-08-10 Ｈｉｇｈ−ｋ層内に形態を形成する方法及びシステム

Country Status (4)

Country Link
US (1) US7361608B2 (https=)
JP (1) JP2008515220A (https=)
TW (1) TWI288975B (https=)
WO (1) WO2006038974A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008530770A (ja) * 2005-01-13 2008-08-07 インターナショナル・ビジネス・マシーンズ・コーポレーション ｎ−ＦＥＴ用途のためのＨｆＳｉＮ金属を形成する方法
JP2009141161A (ja) * 2007-12-07 2009-06-25 Renesas Technology Corp 半導体装置およびその製造方法
JP2009295621A (ja) * 2008-06-02 2009-12-17 Panasonic Corp 半導体装置及びその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050101147A1 (en) * 2003-11-08 2005-05-12 Advanced Micro Devices, Inc. Method for integrating a high-k gate dielectric in a transistor fabrication process
US7834387B2 (en) * 2008-04-10 2010-11-16 International Business Machines Corporation Metal gate compatible flash memory gate stack
US8975706B2 (en) 2013-08-06 2015-03-10 Intermolecular, Inc. Gate stacks including TaXSiYO for MOSFETS
CN110993567B (zh) * 2019-12-09 2022-08-30 中国科学院微电子研究所 一种半导体结构及其形成方法

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US6727148B1 (en) * 1998-06-30 2004-04-27 Lam Research Corporation ULSI MOS with high dielectric constant gate insulator
US6709715B1 (en) * 1999-06-17 2004-03-23 Applied Materials Inc. Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds
US6348420B1 (en) * 1999-12-23 2002-02-19 Asm America, Inc. Situ dielectric stacks
US6492283B2 (en) * 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
WO2002001622A2 (en) * 2000-06-26 2002-01-03 North Carolina State University Novel non-crystalline oxides for use in microelectronic, optical, and other applications
US6660660B2 (en) * 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
JP2002343790A (ja) * 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
US6806095B2 (en) * 2002-03-06 2004-10-19 Padmapani C. Nallan Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers
CN100390945C (zh) * 2002-03-29 2008-05-28 东京毅力科创株式会社 基底绝缘膜的形成方法
US6787440B2 (en) * 2002-12-10 2004-09-07 Intel Corporation Method for making a semiconductor device having an ultra-thin high-k gate dielectric
US6750126B1 (en) * 2003-01-08 2004-06-15 Texas Instruments Incorporated Methods for sputter deposition of high-k dielectric films
JP4681886B2 (ja) * 2003-01-17 2011-05-11 富士通セミコンダクター株式会社 半導体装置
US6869542B2 (en) * 2003-03-12 2005-03-22 International Business Machines Corporation Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials
US6696327B1 (en) * 2003-03-18 2004-02-24 Intel Corporation Method for making a semiconductor device having a high-k gate dielectric
JP2005039015A (ja) * 2003-07-18 2005-02-10 Hitachi High-Technologies Corp プラズマ処理方法および装置
KR20060054387A (ko) * 2003-08-04 2006-05-22 에이에스엠 아메리카, 인코포레이티드 증착 전 게르마늄 표면 처리 방법
US7303996B2 (en) * 2003-10-01 2007-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
US7115530B2 (en) * 2003-12-03 2006-10-03 Texas Instruments Incorporated Top surface roughness reduction of high-k dielectric materials using plasma based processes
KR100568516B1 (ko) * 2004-02-24 2006-04-07 삼성전자주식회사 후처리 기술을 사용하여 아날로그 커패시터를 제조하는 방법
US20050205969A1 (en) * 2004-03-19 2005-09-22 Sharp Laboratories Of America, Inc. Charge trap non-volatile memory structure for 2 bits per transistor
JP4919586B2 (ja) * 2004-06-14 2012-04-18 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US7323423B2 (en) * 2004-06-30 2008-01-29 Intel Corporation Forming high-k dielectric layers on smooth substrates
US7439113B2 (en) * 2004-07-12 2008-10-21 Intel Corporation Forming dual metal complementary metal oxide semiconductor integrated circuits

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008530770A (ja) * 2005-01-13 2008-08-07 インターナショナル・ビジネス・マシーンズ・コーポレーション ｎ−ＦＥＴ用途のためのＨｆＳｉＮ金属を形成する方法
JP2009141161A (ja) * 2007-12-07 2009-06-25 Renesas Technology Corp 半導体装置およびその製造方法
JP2009295621A (ja) * 2008-06-02 2009-12-17 Panasonic Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20060065938A1 (en) 2006-03-30
TW200629542A (en) 2006-08-16
WO2006038974A3 (en) 2009-04-23
US7361608B2 (en) 2008-04-22
WO2006038974A2 (en) 2006-04-13
TWI288975B (en) 2007-10-21

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