JP2008515220A5 - - Google Patents
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- Publication number
- JP2008515220A5 JP2008515220A5 JP2007534576A JP2007534576A JP2008515220A5 JP 2008515220 A5 JP2008515220 A5 JP 2008515220A5 JP 2007534576 A JP2007534576 A JP 2007534576A JP 2007534576 A JP2007534576 A JP 2007534576A JP 2008515220 A5 JP2008515220 A5 JP 2008515220A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- frequency power
- substrate
- high frequency
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 claims 51
- 239000000758 substrate Substances 0.000 claims 29
- 238000005530 etching Methods 0.000 claims 13
- 230000015572 biosynthetic process Effects 0.000 claims 7
- 239000007789 gas Substances 0.000 claims 6
- 230000006698 induction Effects 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 238000001020 plasma etching Methods 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 241000293849 Cordylanthus Species 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 229910004129 HfSiO Inorganic materials 0.000 claims 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims 2
- 229910006501 ZrSiO Inorganic materials 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910004542 HfN Inorganic materials 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 229910004166 TaN Inorganic materials 0.000 claims 1
- 229910004200 TaSiN Inorganic materials 0.000 claims 1
- 229910008482 TiSiN Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/954,104 US7361608B2 (en) | 2004-09-30 | 2004-09-30 | Method and system for forming a feature in a high-k layer |
| PCT/US2005/028321 WO2006038974A2 (en) | 2004-09-30 | 2005-08-10 | A method and system for forming a feature in a high-k layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008515220A JP2008515220A (ja) | 2008-05-08 |
| JP2008515220A5 true JP2008515220A5 (https=) | 2008-10-09 |
Family
ID=36098050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007534576A Withdrawn JP2008515220A (ja) | 2004-09-30 | 2005-08-10 | Ｈｉｇｈ−ｋ層内に形態を形成する方法及びシステム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7361608B2 (https=) |
| JP (1) | JP2008515220A (https=) |
| TW (1) | TWI288975B (https=) |
| WO (1) | WO2006038974A2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050101147A1 (en) * | 2003-11-08 | 2005-05-12 | Advanced Micro Devices, Inc. | Method for integrating a high-k gate dielectric in a transistor fabrication process |
| US20060151846A1 (en) * | 2005-01-13 | 2006-07-13 | International Business Machines Corporation | Method of forming HfSiN metal for n-FET applications |
| JP5280670B2 (ja) * | 2007-12-07 | 2013-09-04 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7834387B2 (en) * | 2008-04-10 | 2010-11-16 | International Business Machines Corporation | Metal gate compatible flash memory gate stack |
| JP2009295621A (ja) * | 2008-06-02 | 2009-12-17 | Panasonic Corp | 半導体装置及びその製造方法 |
| US8975706B2 (en) | 2013-08-06 | 2015-03-10 | Intermolecular, Inc. | Gate stacks including TaXSiYO for MOSFETS |
| CN110993567B (zh) * | 2019-12-09 | 2022-08-30 | 中国科学院微电子研究所 | 一种半导体结构及其形成方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727148B1 (en) * | 1998-06-30 | 2004-04-27 | Lam Research Corporation | ULSI MOS with high dielectric constant gate insulator |
| US6709715B1 (en) * | 1999-06-17 | 2004-03-23 | Applied Materials Inc. | Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds |
| US6348420B1 (en) * | 1999-12-23 | 2002-02-19 | Asm America, Inc. | Situ dielectric stacks |
| US6492283B2 (en) * | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
| WO2002001622A2 (en) * | 2000-06-26 | 2002-01-03 | North Carolina State University | Novel non-crystalline oxides for use in microelectronic, optical, and other applications |
| US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
| JP2002343790A (ja) * | 2001-05-21 | 2002-11-29 | Nec Corp | 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法 |
| US6806095B2 (en) * | 2002-03-06 | 2004-10-19 | Padmapani C. Nallan | Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers |
| CN100390945C (zh) * | 2002-03-29 | 2008-05-28 | 东京毅力科创株式会社 | 基底绝缘膜的形成方法 |
| US6787440B2 (en) * | 2002-12-10 | 2004-09-07 | Intel Corporation | Method for making a semiconductor device having an ultra-thin high-k gate dielectric |
| US6750126B1 (en) * | 2003-01-08 | 2004-06-15 | Texas Instruments Incorporated | Methods for sputter deposition of high-k dielectric films |
| JP4681886B2 (ja) * | 2003-01-17 | 2011-05-11 | 富士通セミコンダクター株式会社 | 半導体装置 |
| US6869542B2 (en) * | 2003-03-12 | 2005-03-22 | International Business Machines Corporation | Hard mask integrated etch process for patterning of silicon oxide and other dielectric materials |
| US6696327B1 (en) * | 2003-03-18 | 2004-02-24 | Intel Corporation | Method for making a semiconductor device having a high-k gate dielectric |
| JP2005039015A (ja) * | 2003-07-18 | 2005-02-10 | Hitachi High-Technologies Corp | プラズマ処理方法および装置 |
| KR20060054387A (ko) * | 2003-08-04 | 2006-05-22 | 에이에스엠 아메리카, 인코포레이티드 | 증착 전 게르마늄 표면 처리 방법 |
| US7303996B2 (en) * | 2003-10-01 | 2007-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics |
| US7115530B2 (en) * | 2003-12-03 | 2006-10-03 | Texas Instruments Incorporated | Top surface roughness reduction of high-k dielectric materials using plasma based processes |
| KR100568516B1 (ko) * | 2004-02-24 | 2006-04-07 | 삼성전자주식회사 | 후처리 기술을 사용하여 아날로그 커패시터를 제조하는 방법 |
| US20050205969A1 (en) * | 2004-03-19 | 2005-09-22 | Sharp Laboratories Of America, Inc. | Charge trap non-volatile memory structure for 2 bits per transistor |
| JP4919586B2 (ja) * | 2004-06-14 | 2012-04-18 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
| US7323423B2 (en) * | 2004-06-30 | 2008-01-29 | Intel Corporation | Forming high-k dielectric layers on smooth substrates |
| US7439113B2 (en) * | 2004-07-12 | 2008-10-21 | Intel Corporation | Forming dual metal complementary metal oxide semiconductor integrated circuits |
-
2004
- 2004-09-30 US US10/954,104 patent/US7361608B2/en not_active Expired - Fee Related
-
2005
- 2005-08-10 WO PCT/US2005/028321 patent/WO2006038974A2/en not_active Ceased
- 2005-08-10 JP JP2007534576A patent/JP2008515220A/ja not_active Withdrawn
- 2005-09-30 TW TW094134227A patent/TWI288975B/zh not_active IP Right Cessation
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