JP2008514991A - リフトオフ工程技術を用いたインターフェロメトリック変調器の製造方法 - Google Patents
リフトオフ工程技術を用いたインターフェロメトリック変調器の製造方法 Download PDFInfo
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Abstract
【解決手段】本開示の実施形態は、リフトオフ工程技術を用いてインターフェロメトリックデバイスを製造する方法を含む。光学的スタックまたは屈曲層などのインターフェロメトリック変調器の種々の層の製造においてリフトオフ工程を用いることは、各層に関連する複数の材料に関する個々の化学現象を有利に避けることができる。さらに、リフトオフ工程を使用することは、インターフェロメトリック変調器の製造に利用される材料及び施設の選択を増やすことを可能にする。
【選択図】図8
Description
発明の分野
本発明の分野は、インターフェロメトリックデバイスの製造の分野を含む、微小電気機械システム(MEMS)に関する。一実施形態において、本発明は、インターフェロメトリックデバイスの製造に用いることが可能な材料及び施設の数を拡張するのに用いられる製造工程技術に関する。
微小電気機械システム(MEMS)は、微少機械要素、アクチュエータ及び電子機器を含む。微少機械要素は、堆積、エッチング、及び又は、基板及び/又は堆積材料層の部分をエッチング除去し、あるいは、層を加えて電気素子及び電気機械素子を形成する他のミクロ機械加工プロセスを用いて形成することができる。MEMSデバイスの1つのタイプは、インターフェロメトリック変調器と称される。本明細書中で用いる場合、インターフェロメトリック変調器又はインターフェロメトリック光変調器とは、光学的干渉の原理を用いて光を選択的に吸収し及び/又は反射するデバイスを指す。ある実施形態において、インターフェロメトリック変調器は、一方又は両方が、この全体又は一部が透過性及び/又は反射性であってもよく、かつ適当な電気信号を印加したときに相対運動が可能な、1組の導電性プレートを備えてもよい。特定の実施形態において、一方のプレートは、基板上に堆積された固定層を備えてもよく、また他方のプレートは、この固定層からエアギャップだけ離れている金属膜を備えてもよい。本明細書に詳細に記載されているように、一方のプレートの他方に対する位置は、このインターフェロメトリック変調器に入射する光の光学的干渉を変えることができる。このようなデバイスは、広範囲の用途を有しており、これらのタイプのデバイスの特徴を利用し及び/又は変更することが当分野において有益であるため、現在ある製品を改良する際、及びまだ開発されていない新しい製品を考案する際に、これらの特徴を活かすことができる。
Claims (42)
- インターフェロメトリック変調器の製造方法であって、
少なくとも第1のパターニング製造工程を用いて透明な基板上に光学的スタックを形成することと、
前記基板上に支持体構造を形成することと、
少なくとも第2のパターニング製造工程を用いて前記光学的スタック及び前記支持体構造上に上部ミラー層を形成することと、を具備し、
前記光学的スタック、前記支持体構造、前記上部ミラー層の少なくとも1つの表面に空洞部が形成され、前記上部ミラー層の前記空洞部への一部の移動は、前記基板の表面から認識される光学特性を制御可能かつ予測可能な方法で変化させ、前記第1及び第2の製造工程の少なくとも1つはリフトオフ工程を具備する方法。 - 前記光学的スタックは導電層、下部ミラー金属層、誘電体層の少なくとも1つを具備する請求項1に記載の方法。
- 前記光学的スタックは下部ミラー金属層を具備する請求項2に記載の方法。
- 少なくとも前記下部ミラー金属層はロー(行)電極を形成する請求項3に記載の方法。
- 前記光学的スタック上に前記上部ミラー層を形成することは、前記光学的スタックと前記上部ミラー層間に犠牲層を堆積することを具備する請求項1に記載の方法。
- 前記空洞部を形成するために前記犠牲層の少なくとも一部を除去することをさらに具備する請求項5に記載の方法。
- 前記リフトオフ工程は、前記犠牲層の少なくとも一部とともに前記光学的スタックの少なくとも一部を離昇することを具備する請求項5に記載の方法。
- 前記上部ミラー層は弾性をもつ金属導電層を具備する請求項1に記載の方法。
- 少なくとも前記上部ミラー層はカラム(列)電極を構成する請求項8に記載の方法。
- 前記第1及び第2の製造工程は、リフトオフ工程を具備する請求項1に記載の方法。
- イメージングアプリケーションを形成することをさらに具備する請求項1に記載の方法。
- 前記イメージングアプリケーションはフラットパネルディスプレイを具備する請求項11に記載の方法。
- 前記フラットパネルディスプレイはモバイル電子デバイスの一部である請求項12に記載の方法。
- 前記イメージングアプリケーションは、ハンドヘルドコンピュータ、パーソナルデジタルアシスタント、ラップトップコンピュータ、携帯電話、ハンドヘルドビデオゲームデバイス、家庭機器、テレビ、時計、キオスク、自動車計算装置の少なくとも1つを具備する請求項11に記載の方法。
- 前記リフトオフ工程は概してT字形状のリフトオフステンシルを形成することを具備する請求項1に記載の方法。
- 前記リフトオフ工程はリフトオフステンシルをパターニングすることを具備する請求項1に記載の方法。
- 前記リフトオフステンシルのパターニングはポリマー上にフォトレジストを堆積することを具備する請求項16に記載の方法。
- 前記リフトオフ工程は、リフトオフステンシルを除去するためのウエットエッチングを具備する請求項1に記載の方法。
- 前記上部ミラー層上に変形可能な層を堆積することをさらに具備する請求項1に記載の方法。
- 前記上部ミラー層は犠牲層の除去後、前記変形可能な層から吊り下げられる請求項19に記載の方法。
- 請求項1の方法によって製造されるインターフェロメトリック変調器。
- 請求項1の方法によって製造されるインターフェロメトリック変調器のアレイからなるディスプレイシステム。
- 前記アレイと電気通信可能であり、イメージデータを処理するように構成されたプロセッサと、
前記プロセッサと電気通信可能なメモリ装置と、をさらに具備する請求項22に記載のディスプレイ装置。 - 少なくとも1つの信号を前記アレイに送信するように構成された請求項23に記載のディスプレイ装置。
- 前記イメージデータの少なくとも一部を前記駆動回路に送信するように構成されたコントローラをさらに具備する請求項24に記載のディスプレイ装置。
- 前記イメージデータを前記プロセッサに送信するように構成されたイメージ源モジュールをさらに具備する請求項23に記載のディスプレイ装置。
- 前記イメージ源モジュールは、受信機、トランシーバ、送信器の少なくとも1つを具備する請求項26に記載のディスプレイ装置。
- 入力データを受信するとともに当該入力データを前記プロセッサに送信するように構成された入力装置をさらに具備する請求項23に記載のディスプレイ装置。
- インターフェロメトリック変調器の製造方法であって、
基板上にリフトオフステンシルを形成することと、
前記リフトオフステンシルと前記基板上に第1の材料層を堆積することと、
前記第1の材料層上に第2の材料層を堆積することと、
前記リフトオフステンシルを除去して、前記第2の材料層と前記第1の材料層とからなるパターニングされた領域を形成することと、を具備する方法。 - 前記第1の材料層はITO(インジウムすず酸化物)であることを特徴とする請求項29に記載の方法。
- 前記第2の材料層は、クロム、モリブデン、チタンからなる群から選択された少なくとも1つの金属を具備する請求項30に記載の方法。
- 前記第2の材料層はモリブデンを具備する請求項31に記載の方法。
- 前記第1の材料層は前記第2の材料層の厚さよりも大きい厚さをもつ請求項31に記載の方法。
- 前記第2の材料層上に第3の材料層を堆積することをさらに具備する請求項29に記載の方法。
- 前記第3の材料層は、誘電材料を具備する請求項34に記載の方法。
- 前記第3の材料層上に第4の材料層を堆積することをさらに具備する請求項34に記載の方法。
- 前記第4の材料層は、モリブデンを具備する請求項36に記載の方法。
- 請求項29の方法によって製造されたインターフェロメトリック変調器。
- インターフェロメトリック変調器のアレイを製造する方法であって、
リフトオフステンシルを用いて基板上に複数の正にパターニングされた光学的スタックと、複数の負にパターニングされたポスト領域とを形成することと、
前記負にパターニングされたポスト領域内に複数のポスト構造を形成すること、とを具備する方法。 - 請求項39の方法によって製造されたインターフェロメトリック変調器のアレイ。
- ディスプレイ装置の製造方法であって、
第1のミラー層を堆積することと、
前記第1のミラー層上に犠牲層を堆積することと、
前記犠牲層上にリフトオフステンシルを形成することと、
前記リフトオフステンシル上に第2のミラー層を堆積することと、
前記リフトオフステンシルを除去することによって、前記第2のミラー層のパターニングされた領域を形成して前記犠牲層の一部を露出することと、
を具備する方法。 - 請求項41の方法によって製造されたディスプレイ装置。
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US61349604P | 2004-09-27 | 2004-09-27 | |
US60/613,496 | 2004-09-27 | ||
US11/155,379 US7553684B2 (en) | 2004-09-27 | 2005-06-17 | Method of fabricating interferometric devices using lift-off processing techniques |
US11/155,379 | 2005-06-17 | ||
PCT/US2005/031693 WO2006036470A1 (en) | 2004-09-27 | 2005-09-02 | Method of fabricating interferometric modulator devices using lift-off processing techniques |
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- 2005-09-02 CN CN2005800321266A patent/CN101027593B/zh not_active Expired - Fee Related
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JP2014508958A (ja) * | 2010-11-30 | 2014-04-10 | クゥアルコム・メムス・テクノロジーズ・インコーポレイテッド | 電気機械干渉変調器デバイス |
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Publication number | Publication date |
---|---|
US20090262412A1 (en) | 2009-10-22 |
WO2006036470A1 (en) | 2006-04-06 |
US7906353B2 (en) | 2011-03-15 |
TWI387780B (zh) | 2013-03-01 |
KR101168647B1 (ko) | 2012-07-27 |
KR20070062587A (ko) | 2007-06-15 |
JP5096151B2 (ja) | 2012-12-12 |
CN101027593A (zh) | 2007-08-29 |
CN101027593B (zh) | 2010-07-21 |
US7553684B2 (en) | 2009-06-30 |
US20060067644A1 (en) | 2006-03-30 |
TW200636285A (en) | 2006-10-16 |
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