JP2008513552A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2008513552A5 JP2008513552A5 JP2007531317A JP2007531317A JP2008513552A5 JP 2008513552 A5 JP2008513552 A5 JP 2008513552A5 JP 2007531317 A JP2007531317 A JP 2007531317A JP 2007531317 A JP2007531317 A JP 2007531317A JP 2008513552 A5 JP2008513552 A5 JP 2008513552A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric film
- glass dielectric
- organic silicate
- silicate glass
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims description 9
- 239000005368 silicate glass Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 11
- 239000011521 glass Substances 0.000 claims 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 6
- 229910052799 carbon Inorganic materials 0.000 claims 6
- 239000012190 activator Substances 0.000 claims 5
- 230000002152 alkylating effect Effects 0.000 claims 5
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims 5
- 238000006884 silylation reaction Methods 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 238000004377 microelectronic Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000004615 ingredient Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 3
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- QUMXDOLUJCHOAY-UHFFFAOYSA-N 1-Phenylethyl acetate Chemical compound CC(=O)OC(C)C1=CC=CC=C1 QUMXDOLUJCHOAY-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- -1 2- (Butoxyethoxy) ethyl Chemical group 0.000 description 2
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 2
- YVBCULSIZWMTFY-UHFFFAOYSA-N 4-Heptanol Natural products CCCC(O)CCC YVBCULSIZWMTFY-UHFFFAOYSA-N 0.000 description 2
- BKQICAFAUMRYLZ-UHFFFAOYSA-N 4-methylheptan-3-ol Chemical compound CCCC(C)C(O)CC BKQICAFAUMRYLZ-UHFFFAOYSA-N 0.000 description 2
- FCOUHTHQYOMLJT-UHFFFAOYSA-N 6-methylheptan-2-ol Chemical compound CC(C)CCCC(C)O FCOUHTHQYOMLJT-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Natural products CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- GJQIMXVRFNLMTB-UHFFFAOYSA-N nonyl acetate Chemical compound CCCCCCCCCOC(C)=O GJQIMXVRFNLMTB-UHFFFAOYSA-N 0.000 description 2
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 2
- MDHYEMXUFSJLGV-UHFFFAOYSA-N phenethyl acetate Chemical compound CC(=O)OCCC1=CC=CC=C1 MDHYEMXUFSJLGV-UHFFFAOYSA-N 0.000 description 2
- RCYIBFNZRWQGNB-UHFFFAOYSA-N 2,6-dimethylheptan-1-ol Chemical compound CC(C)CCCC(C)CO RCYIBFNZRWQGNB-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- WOYWLLHHWAMFCB-UHFFFAOYSA-N 2-ethylhexyl acetate Chemical compound CCCCC(CC)COC(C)=O WOYWLLHHWAMFCB-UHFFFAOYSA-N 0.000 description 1
- PLHCSZRZWOWUBW-UHFFFAOYSA-N 2-methoxyethyl 3-oxobutanoate Chemical compound COCCOC(=O)CC(C)=O PLHCSZRZWOWUBW-UHFFFAOYSA-N 0.000 description 1
- ZVHAANQOQZVVFD-UHFFFAOYSA-N 5-methylhexan-1-ol Chemical compound CC(C)CCCCO ZVHAANQOQZVVFD-UHFFFAOYSA-N 0.000 description 1
- FDXBUMXUJRZANT-UHFFFAOYSA-N 6-phenylhexan-1-ol Chemical compound OCCCCCCC1=CC=CC=C1 FDXBUMXUJRZANT-UHFFFAOYSA-N 0.000 description 1
- WOFAGNLBCJWEOE-UHFFFAOYSA-N Benzyl acetoacetate Chemical compound CC(=O)CC(=O)OCC1=CC=CC=C1 WOFAGNLBCJWEOE-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- GXMIHVHJTLPVKL-UHFFFAOYSA-N n,n,2-trimethylpropanamide Chemical compound CC(C)C(=O)N(C)C GXMIHVHJTLPVKL-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- UXDAWVUDZLBBAM-UHFFFAOYSA-N n,n-diethylbenzeneacetamide Chemical compound CCN(CC)C(=O)CC1=CC=CC=C1 UXDAWVUDZLBBAM-UHFFFAOYSA-N 0.000 description 1
- MBHINSULENHCMF-UHFFFAOYSA-N n,n-dimethylpropanamide Chemical compound CCC(=O)N(C)C MBHINSULENHCMF-UHFFFAOYSA-N 0.000 description 1
- DKLYDESVXZKCFI-UHFFFAOYSA-N n,n-diphenylacetamide Chemical compound C=1C=CC=CC=1N(C(=O)C)C1=CC=CC=C1 DKLYDESVXZKCFI-UHFFFAOYSA-N 0.000 description 1
- OYVXVLSZQHSNDK-UHFFFAOYSA-N n-methoxy-n-methylacetamide Chemical compound CON(C)C(C)=O OYVXVLSZQHSNDK-UHFFFAOYSA-N 0.000 description 1
- AXLMPTNTPOWPLT-UHFFFAOYSA-N prop-2-enyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OCC=C AXLMPTNTPOWPLT-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- JKUYRAMKJLMYLO-UHFFFAOYSA-N tert-butyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OC(C)(C)C JKUYRAMKJLMYLO-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/940,686 | 2004-09-15 | ||
| US10/940,686 US8475666B2 (en) | 2004-09-15 | 2004-09-15 | Method for making toughening agent materials |
| US11/203,558 | 2005-08-12 | ||
| US11/203,558 US7915159B2 (en) | 2004-09-15 | 2005-08-12 | Treating agent materials |
| PCT/US2005/031936 WO2006033836A2 (en) | 2004-09-15 | 2005-09-07 | Treating agent materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008513552A JP2008513552A (ja) | 2008-05-01 |
| JP2008513552A5 true JP2008513552A5 (enExample) | 2008-10-23 |
| JP5161571B2 JP5161571B2 (ja) | 2013-03-13 |
Family
ID=36090456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007531317A Expired - Fee Related JP5161571B2 (ja) | 2004-09-15 | 2005-09-07 | 処理剤物質 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1803149A2 (enExample) |
| JP (1) | JP5161571B2 (enExample) |
| KR (1) | KR20070060117A (enExample) |
| SG (1) | SG141441A1 (enExample) |
| WO (1) | WO2006033836A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5019714B2 (ja) * | 2005-01-31 | 2012-09-05 | 大陽日酸株式会社 | 低誘電率膜のダメージ回復法 |
| US7807219B2 (en) * | 2006-06-27 | 2010-10-05 | Lam Research Corporation | Repairing and restoring strength of etch-damaged low-k dielectric materials |
| US7999355B2 (en) * | 2008-07-11 | 2011-08-16 | Air Products And Chemicals, Inc. | Aminosilanes for shallow trench isolation films |
| JP5705751B2 (ja) * | 2009-03-10 | 2015-04-22 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ｌｏｗ−ｋシリル化用の環式アミノ化合物 |
| JP5404361B2 (ja) | 2009-12-11 | 2014-01-29 | 株式会社東芝 | 半導体基板の表面処理装置及び方法 |
| JP5820688B2 (ja) | 2011-03-23 | 2015-11-24 | 株式会社Kri | 多糖類の溶解に用いられる溶媒ならびに該溶媒を用いた成形体および多糖類誘導体の製造方法 |
| US9029171B2 (en) | 2012-06-25 | 2015-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self repairing process for porous dielectric materials |
| KR101847033B1 (ko) | 2015-11-30 | 2018-04-09 | 김태관 | 은 코팅용 용액 조성물 및 이를 이용한 은 코팅 방법 |
| JP7292020B2 (ja) * | 2018-08-27 | 2023-06-16 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
| JPWO2021176913A1 (enExample) * | 2020-03-04 | 2021-09-10 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448331B1 (en) * | 1997-07-15 | 2002-09-10 | Asahi Kasei Kabushiki Kaisha | Alkoxysilane/organic polymer composition for thin insulating film production and use thereof |
| US6395651B1 (en) * | 1998-07-07 | 2002-05-28 | Alliedsignal | Simplified process for producing nanoporous silica |
| JP2001118842A (ja) * | 1999-10-15 | 2001-04-27 | Nec Corp | 半導体装置とその製造方法 |
| CA2413592A1 (en) * | 2000-06-23 | 2002-01-03 | Nigel P. Hacker | Method to restore hydrophobicity in dielectric films and materials |
| JP2002353308A (ja) * | 2001-05-28 | 2002-12-06 | Toshiba Corp | 半導体装置及びその製造方法 |
| US6879046B2 (en) * | 2001-06-28 | 2005-04-12 | Agere Systems Inc. | Split barrier layer including nitrogen-containing portion and oxygen-containing portion |
| CN1296771C (zh) * | 2002-03-04 | 2007-01-24 | 东京毅力科创株式会社 | 在晶片处理中低电介质材料的钝化方法 |
| JP2003282698A (ja) * | 2002-03-22 | 2003-10-03 | Sony Corp | 半導体装置の製造方法および半導体装置 |
| AU2002309807A1 (en) * | 2002-04-10 | 2003-10-27 | Honeywell International, Inc. | Low metal porous silica dielectric for integral circuit applications |
| JP4225765B2 (ja) * | 2002-10-31 | 2009-02-18 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜 |
| JP2007508691A (ja) * | 2003-10-08 | 2007-04-05 | ハネウェル・インターナショナル・インコーポレーテッド | シリル化剤を用いる低誘電率誘電材料の損傷の修復 |
-
2005
- 2005-09-07 KR KR1020077008636A patent/KR20070060117A/ko not_active Withdrawn
- 2005-09-07 WO PCT/US2005/031936 patent/WO2006033836A2/en not_active Ceased
- 2005-09-07 SG SG200802085-1A patent/SG141441A1/en unknown
- 2005-09-07 EP EP05806419A patent/EP1803149A2/en not_active Withdrawn
- 2005-09-07 JP JP2007531317A patent/JP5161571B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2023027033A5 (enExample) | ||
| CN1296771C (zh) | 在晶片处理中低电介质材料的钝化方法 | |
| JP2008513552A5 (enExample) | ||
| JP2005519481A5 (enExample) | ||
| JP5590364B2 (ja) | フォトレジスト剥離液組成物 | |
| JP5029686B2 (ja) | シリコン系絶縁膜のエッチング後処理剤、半導体装置の製造方法および半導体装置 | |
| US6680164B2 (en) | Solvent free photoresist strip and residue removal processing for post etching of low-k films | |
| JP2013118347A (ja) | ウェハの洗浄方法 | |
| WO2010018430A8 (en) | A hardmask process for forming a reverse tone image | |
| TW200700933A (en) | Immersion lithography and treatment system thereof | |
| JP2008277748A5 (enExample) | ||
| JP2006520104A5 (enExample) | ||
| WO2007111694A3 (en) | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon | |
| JP2010534935A5 (enExample) | ||
| CN111356759A (zh) | 剥离剂溶液和使用剥离剂溶液的方法 | |
| TW200619872A (en) | Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate | |
| TW200707125A (en) | Immersion lithography and treatment method thereof | |
| US7056824B2 (en) | Electronic device manufacture | |
| EP2015352A3 (en) | Photon induced etching of copper | |
| TW200802535A (en) | Method and system for patterning a dielectric film | |
| WO2015118836A1 (ja) | ポリイミド前駆体を含む樹脂組成物、硬化膜の製造方法及び電子部品 | |
| TW200712000A (en) | Method for producing porous silica and apparatus for producing thereof | |
| JP3833176B2 (ja) | フォトレジスト除去剤組成物 | |
| TW200308051A (en) | Method of treatment of porous dielectric films to reduce damage during cleaning | |
| TW556056B (en) | Method of removing photo-resist and polymer residue |