KR20070060117A - 처리제 물질 - Google Patents

처리제 물질 Download PDF

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Publication number
KR20070060117A
KR20070060117A KR1020077008636A KR20077008636A KR20070060117A KR 20070060117 A KR20070060117 A KR 20070060117A KR 1020077008636 A KR1020077008636 A KR 1020077008636A KR 20077008636 A KR20077008636 A KR 20077008636A KR 20070060117 A KR20070060117 A KR 20070060117A
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KR
South Korea
Prior art keywords
dielectric film
organosilicate glass
glass dielectric
solvent
acetate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020077008636A
Other languages
English (en)
Korean (ko)
Inventor
아닐 에스. 바납
보리스 에이. 코롤레프
로저 와이. 렁
베쓰 씨. 뮤노즈
테레사 에이. 라모스
로버트 알. 로쓰
폴 쥐. 아펜
데니스 에이취. 엔디쉬
브라이언 제이. 다니엘스
아난쓰 나만
낸시 이와모토
Original Assignee
허니웰 인터내셔널 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/940,686 external-priority patent/US8475666B2/en
Application filed by 허니웰 인터내셔널 인코포레이티드 filed Critical 허니웰 인터내셔널 인코포레이티드
Publication of KR20070060117A publication Critical patent/KR20070060117A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
  • Paints Or Removers (AREA)
KR1020077008636A 2004-09-15 2005-09-07 처리제 물질 Withdrawn KR20070060117A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/940,686 US8475666B2 (en) 2004-09-15 2004-09-15 Method for making toughening agent materials
US10/940,686 2004-09-15
US11/203,558 US7915159B2 (en) 2004-09-15 2005-08-12 Treating agent materials
US11/203,558 2005-08-12

Publications (1)

Publication Number Publication Date
KR20070060117A true KR20070060117A (ko) 2007-06-12

Family

ID=36090456

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077008636A Withdrawn KR20070060117A (ko) 2004-09-15 2005-09-07 처리제 물질

Country Status (5)

Country Link
EP (1) EP1803149A2 (enExample)
JP (1) JP5161571B2 (enExample)
KR (1) KR20070060117A (enExample)
SG (1) SG141441A1 (enExample)
WO (1) WO2006033836A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101376003B1 (ko) * 2012-06-25 2014-03-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 다공성 유전 물질을 위한 자체 수리 프로세스

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5019714B2 (ja) * 2005-01-31 2012-09-05 大陽日酸株式会社 低誘電率膜のダメージ回復法
US7807219B2 (en) * 2006-06-27 2010-10-05 Lam Research Corporation Repairing and restoring strength of etch-damaged low-k dielectric materials
US7999355B2 (en) * 2008-07-11 2011-08-16 Air Products And Chemicals, Inc. Aminosilanes for shallow trench isolation films
SG174296A1 (en) * 2009-03-10 2011-10-28 Air Liquide Cyclic amino compounds for low-k silylation
JP5404361B2 (ja) 2009-12-11 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
JP5820688B2 (ja) * 2011-03-23 2015-11-24 株式会社Kri 多糖類の溶解に用いられる溶媒ならびに該溶媒を用いた成形体および多糖類誘導体の製造方法
KR101847033B1 (ko) 2015-11-30 2018-04-09 김태관 은 코팅용 용액 조성물 및 이를 이용한 은 코팅 방법
JP7292020B2 (ja) * 2018-08-27 2023-06-16 東京応化工業株式会社 表面処理剤及び表面処理方法
JPWO2021176913A1 (enExample) * 2020-03-04 2021-09-10

Family Cites Families (11)

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US6448331B1 (en) * 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
US6395651B1 (en) * 1998-07-07 2002-05-28 Alliedsignal Simplified process for producing nanoporous silica
JP2001118842A (ja) * 1999-10-15 2001-04-27 Nec Corp 半導体装置とその製造方法
US7029826B2 (en) * 2000-06-23 2006-04-18 Honeywell International Inc. Method to restore hydrophobicity in dielectric films and materials
JP2002353308A (ja) * 2001-05-28 2002-12-06 Toshiba Corp 半導体装置及びその製造方法
US6879046B2 (en) * 2001-06-28 2005-04-12 Agere Systems Inc. Split barrier layer including nitrogen-containing portion and oxygen-containing portion
AU2003220039A1 (en) * 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
JP2003282698A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体装置の製造方法および半導体装置
US7381441B2 (en) * 2002-04-10 2008-06-03 Honeywell International Inc. Low metal porous silica dielectric for integral circuit applications
JP4225765B2 (ja) * 2002-10-31 2009-02-18 日揮触媒化成株式会社 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜
CN1839468B (zh) * 2003-10-08 2010-11-24 霍尼韦尔国际公司 使用甲硅烷基化剂修复低k介电材料的损伤

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101376003B1 (ko) * 2012-06-25 2014-03-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 다공성 유전 물질을 위한 자체 수리 프로세스
US9029171B2 (en) 2012-06-25 2015-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Self repairing process for porous dielectric materials
US9806026B2 (en) 2012-06-25 2017-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Self repairing process for porous dielectric materials

Also Published As

Publication number Publication date
SG141441A1 (en) 2008-04-28
WO2006033836A2 (en) 2006-03-30
JP2008513552A (ja) 2008-05-01
EP1803149A2 (en) 2007-07-04
JP5161571B2 (ja) 2013-03-13
WO2006033836A3 (en) 2006-07-27

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PA0105 International application

Patent event date: 20070416

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid