JP2008511758A - 粘性前駆物質を用いた化学気相堆積による機能的に段階的な誘電体層の堆積方法 - Google Patents
粘性前駆物質を用いた化学気相堆積による機能的に段階的な誘電体層の堆積方法 Download PDFInfo
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- 239000002243 precursor Substances 0.000 title description 4
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 141
- 238000000034 method Methods 0.000 claims abstract description 75
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000012159 carrier gas Substances 0.000 claims abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000001301 oxygen Substances 0.000 claims abstract description 28
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 21
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- 230000000903 blocking effect Effects 0.000 claims abstract description 7
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- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
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- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
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Abstract
【選択図】 図6
Description
[0022]図1Aは、バリヤ層と機能的に段階的な誘電体層が本発明の実施形態に従って形成された層の一実施例を示す図である。層は、導電材料(例えば、銅)で充填したトレンチ106を含有する誘電体層104を含む。誘電体層104とトレンチ106は、下にある支持層102上に形成されてもよい。支持層102は、他の種類の層の中でも、シリコン基板、金属膜層(例えば、銅又はアルミニウム層)、ソース、ドレイン又はゲート電極の最上部に形成されるサリサイド層、又は誘電体層(例えば、IMD層)であってもよい。
[0031]図3を参照すると、本発明の実施形態に従って段階的誘電体層の形成方法のステップを示すフローチャートが示されている。上記方法は、ガス混合物を初期流量302でガスシャワーヘッドに流して、下にある層(例えば、低κバリヤ層)上に段階的誘電体層304の酸化物を多く含む部分を堆積させることにより開始してもよい。ガス混合物は、シリコン-炭素含有ガス(例えば、OMCS)と、酸素含有ガス(例えば、O2)と、キャリヤガス(例えば、He)とを含んでもよい。
[0044]図6は、本発明の実施形態において用いることができるシャワーヘッド600の構造を示す断面図である。複数の通し穴604を持つブロッカープレート606は、シャワーヘッド600の面板606とガス供給口の接続部分608の間に配置されている。ブロッカープレート602において、ガス供給口608から分配されるガスは、ブロッカープレート602の上流側のバッフルスペース610に一時的に貯えられる。
[0058]実験例は、段階的な誘電体層を形成するための本発明の方法が下にあるバリヤ層上に堆積した膜内付加物の数を減少させるということを示した。従来の堆積技術を用いた誘電体層を形成する比較例のためのプロセス条件を表1-Aに示す。
Claims (23)
- 下にある層上に段階的な誘電体層を形成する方法であって、
シリコン-炭素含有ガスと酸素含有ガスとキャリヤガスの混合物を阻止板と面板を備えたシャワーヘッドに流して、該段階的な誘電体層の酸化物を多く含む部分を形成するステップであって、該シリコン-炭素含有ガスが初期流量を持つ前記ステップと、
該シリコン-炭素含有ガスを第1中間流量で約0.5秒以上流すステップであって、該第1中間流量が該初期流量より大きい前記ステップと、
該シリコン-炭素含有ガスを該第1中間流量より大きい最大流量で流して、該段階的な誘電体層の炭素を多く含む部分を形成するステップと、
を含む前記方法。 - 該シリコン-炭素含有ガスが室温で液体である、請求項1記載の方法。
- 該シリコン-炭素含有ガスがオクタメチルシクロテトラシロキサン(OMCTS)である、請求項1記載の方法。
- 該酸素含有ガスが酸素(O2)を含む、請求項1記載の方法。
- 該キャリヤガスがヘリウム(He)を含む、請求項1記載の方法。
- 該下にある層が炭素含有拡散バリヤ層である、請求項1記載の方法。
- 該炭素含有拡散バリヤ層がシリコンオキシカーバイド(SiOCH)を含む、請求項6記載の方法。
- 該段階的な誘電体層の該酸化物を多く含む部分の厚さが約70オングストローム〜約80オングストロームである、請求項1記載の方法。
- 該シリコン-炭素含有ガスが該初期流量から該第1中間流量に約600ミリグラム/秒以下で増加させる、請求項1記載の方法。
- 該方法が、該シリコン-炭素含有ガスを第2中間流量で約0.5秒以上流すステップであって、該第2中間流量が該第1中間流量より大きい前記ステップを含む、請求項1記載の方法。
- 該シリコン-炭素含有ガスが該初期流量から該第1中間流量に向かう場合に、該酸素含有ガスの流量が減少する、請求項1記載の方法。
- 該シリコン-炭素含有ガスが該初期流量から該第1中間流量に向かう場合に、該キャリヤガスの流量が減少する、請求項1記載の方法。
- 下にある層上に段階的な誘電体層を形成する方法であって、
シリコン-炭素含有ガスと酸素含有ガスとキャリヤガスの混合物を阻止板と面板を備えたシャワーヘッドに流して、該段階的な誘電体層の酸化物を多く含む部分を形成するステップであって、該シリコン-炭素含有ガスが初期流量を持つ前記ステップと、
該シリコン-炭素含有ガスを最大流量に増加させて、該段階的な誘電体層の炭素を多く含む部分を形成するステップであって、該シリコン-炭素含有ガスが該最大流量に達した後まで一定のままであるキャリヤガス流量を該キャリヤガスが有する前記ステップと、
を含む前記方法。 - 該シリコン-炭素含有ガスがオクタメチルシクロテトラシロキサン(OMCTS)である、請求項13記載の方法。
- 該キャリヤガスがヘリウム(He)を含む、請求項13記載の方法。
- 該酸素含有ガスが酸素(O2)を含む、請求項13記載の方法。
- 該シリコン-炭素含有ガスが該最大流量に達した後に該キャリヤガス流量が約50%以上だけ減少する、請求項13記載の方法。
- 該シリコン-炭素含有ガスの該初期流量が約500mgmであり、該最大流量が約3000mgmである、請求項13記載の方法。
- 該シリコン-炭素含有ガスが該最大流量に達した後に該キャリヤガス流量が約5000sccmから約1000sccmに減少する、請求項18記載の方法。
- 下にある層上に段階的な誘電体層を形成するシステムであって、
阻止板と面板を備えたシャワーヘッドであって、該シャワーヘッドがガス供給口に結合され、シリコン-炭素含有ガスと酸素含有ガスとキャリヤヘッドを含むプロセスガスが該シャワーヘッドに導入される前記シャワーヘッドと、
該シリコン-炭素含有ガスの該シャワーヘッドへの流量を制御する液体流量メータであって、該液体流量メータが、該段階的な誘電体層の酸素を多く含む部分を形成する間、該シリコン-炭素含有ガスを初期流量で流し、その後、該シリコン-炭素含有ガス流量を該初期流量から中間流量に増加させ、該中間流量を約0.5秒以上維持し、その後更に、該シリコン-炭素含有ガス流量を該中間流量から最大流量に増加させて、該段階的な誘電体層の炭素を多く含む部分を形成するようにプログラムされている、前記液体流量メータと、
を備えた前記システム。 - 該シリコン-炭素含有ガスがオクタメチルシクロテトラシロキサン(OMCTS)である、請求項20記載のシステム。
- 該酸素含有ガスが酸素(O2)を含み、該キャリヤガスがヘリウム(He)を含む、請求項20記載のシステム。
- 該システムが、該シャワーヘッドに存在する該プロセスガスからプラズマを形成するように構成されたプラズマ生成システムを備えている、請求項20記載のシステム。
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WO2006028844A1 (en) | 2006-03-16 |
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