JP2008511141A - 半導体被処理物を薄肉化するためのシステム - Google Patents
半導体被処理物を薄肉化するためのシステム Download PDFInfo
- Publication number
- JP2008511141A JP2008511141A JP2007528050A JP2007528050A JP2008511141A JP 2008511141 A JP2008511141 A JP 2008511141A JP 2007528050 A JP2007528050 A JP 2007528050A JP 2007528050 A JP2007528050 A JP 2007528050A JP 2008511141 A JP2008511141 A JP 2008511141A
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- workpiece
- main body
- processed
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Weting (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/922,762 US20060040111A1 (en) | 2004-08-20 | 2004-08-20 | Process chamber and system for thinning a semiconductor workpiece |
US10/923,132 US7354649B2 (en) | 2004-08-20 | 2004-08-20 | Semiconductor workpiece |
US10/923,363 US7288489B2 (en) | 2004-08-20 | 2004-08-20 | Process for thinning a semiconductor workpiece |
US10/923,436 US20060046499A1 (en) | 2004-08-20 | 2004-08-20 | Apparatus for use in thinning a semiconductor workpiece |
PCT/US2005/029598 WO2006023753A2 (en) | 2004-08-20 | 2005-08-18 | System for thinning a semiconductor workpiece |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008511141A true JP2008511141A (ja) | 2008-04-10 |
Family
ID=35968220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007528050A Pending JP2008511141A (ja) | 2004-08-20 | 2005-08-18 | 半導体被処理物を薄肉化するためのシステム |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1799446A4 (zh) |
JP (1) | JP2008511141A (zh) |
KR (2) | KR20070051337A (zh) |
CN (1) | CN102790000B (zh) |
AT (1) | AT10874U1 (zh) |
DE (1) | DE212005000047U1 (zh) |
TW (2) | TWI463527B (zh) |
WO (1) | WO2006023753A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011040753A (ja) * | 2009-08-12 | 2011-02-24 | Siltronic Ag | ポリッシングされた半導体ウェハを製造する方法 |
JP2020096101A (ja) * | 2018-12-13 | 2020-06-18 | 株式会社荏原製作所 | 基板ホルダに使用するシール |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG147330A1 (en) | 2007-04-19 | 2008-11-28 | Micron Technology Inc | Semiconductor workpiece carriers and methods for processing semiconductor workpieces |
US7989318B2 (en) * | 2008-12-08 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stacking semiconductor dies |
NL2014625B1 (en) * | 2015-04-13 | 2017-01-06 | Suss Microtec Lithography Gmbh | Wafer treating device and sealing ring for a wafer treating device. |
DE102019110402A1 (de) | 2018-05-25 | 2019-11-28 | Infineon Technologies Ag | Ein Verfahren zum Bearbeiten eines Halbleiterwafers, eine Halbleiter-Verbundstruktur und eine Stützstruktur für einen Halbleiterwafer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003243356A (ja) * | 2001-12-12 | 2003-08-29 | Denso Corp | 半導体装置の製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL162254B (nl) * | 1968-11-29 | 1979-11-15 | Philips Nv | Halfgeleiderinrichting voor het omzetten van mechanische spanningen in elektrische signalen en werkwijze voor het vervaardigen daarvan. |
US4266334A (en) * | 1979-07-25 | 1981-05-12 | Rca Corporation | Manufacture of thinned substrate imagers |
US5011782A (en) * | 1989-03-31 | 1991-04-30 | Electric Power Research Institute | Method of making passivated antireflective coating for photovoltaic cell |
JPH0684731A (ja) * | 1992-09-07 | 1994-03-25 | Nec Kyushu Ltd | 半導体ウェハー |
JP3161515B2 (ja) * | 1997-10-08 | 2001-04-25 | 三菱マテリアル株式会社 | 半導体装置の製造方法 |
US6613681B1 (en) * | 1998-08-28 | 2003-09-02 | Micron Technology, Inc. | Method of removing etch residues |
US6248222B1 (en) * | 1998-09-08 | 2001-06-19 | Acm Research, Inc. | Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces |
US6162702A (en) * | 1999-06-17 | 2000-12-19 | Intersil Corporation | Self-supported ultra thin silicon wafer process |
US6402843B1 (en) * | 1999-12-07 | 2002-06-11 | Trusi Technologies, Llc | Non-contact workpiece holder |
US6334453B1 (en) * | 2000-02-14 | 2002-01-01 | Semitool, Inc. | Seal configuration for use with a motor drive assembly in a microelectronic workpiece processing system |
WO2002047139A2 (en) * | 2000-12-04 | 2002-06-13 | Ebara Corporation | Methode of forming a copper film on a substrate |
JP3899871B2 (ja) * | 2001-08-23 | 2007-03-28 | 株式会社デンソー | エッチング方法及びエッチング装置並びに薄膜センサの製造方法 |
DE10256985B4 (de) * | 2001-12-12 | 2013-01-10 | Denso Corporation | Verfahren zur Herstellung eines Leistungshalbleiterbauelements |
JP4185704B2 (ja) * | 2002-05-15 | 2008-11-26 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US20040074808A1 (en) * | 2002-07-05 | 2004-04-22 | Entegris, Inc. | Fire retardant wafer carrier |
DE10260233B4 (de) * | 2002-12-20 | 2016-05-19 | Infineon Technologies Ag | Verfahren zum Befestigen eines Werkstücks mit einem Feststoff an einem Werkstückträger und Werkstückträger |
US6940181B2 (en) * | 2003-10-21 | 2005-09-06 | Micron Technology, Inc. | Thinned, strengthened semiconductor substrates and packages including same |
US20050239295A1 (en) * | 2004-04-27 | 2005-10-27 | Wang Pei-L | Chemical treatment of material surfaces |
-
2005
- 2005-08-18 KR KR1020077006237A patent/KR20070051337A/ko not_active Application Discontinuation
- 2005-08-18 CN CN201210101297.1A patent/CN102790000B/zh not_active Expired - Fee Related
- 2005-08-18 KR KR1020077006971A patent/KR20070048793A/ko not_active Application Discontinuation
- 2005-08-18 AT AT0900405U patent/AT10874U1/de not_active IP Right Cessation
- 2005-08-18 EP EP05789099A patent/EP1799446A4/en not_active Ceased
- 2005-08-18 JP JP2007528050A patent/JP2008511141A/ja active Pending
- 2005-08-18 WO PCT/US2005/029598 patent/WO2006023753A2/en active Application Filing
- 2005-08-18 DE DE212005000047U patent/DE212005000047U1/de not_active Expired - Lifetime
- 2005-08-19 TW TW094128423A patent/TWI463527B/zh not_active IP Right Cessation
- 2005-08-19 TW TW101109367A patent/TWI502620B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003243356A (ja) * | 2001-12-12 | 2003-08-29 | Denso Corp | 半導体装置の製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011040753A (ja) * | 2009-08-12 | 2011-02-24 | Siltronic Ag | ポリッシングされた半導体ウェハを製造する方法 |
JP2020096101A (ja) * | 2018-12-13 | 2020-06-18 | 株式会社荏原製作所 | 基板ホルダに使用するシール |
CN111321449A (zh) * | 2018-12-13 | 2020-06-23 | 株式会社荏原制作所 | 用于基板保持件的密封件 |
JP7136679B2 (ja) | 2018-12-13 | 2022-09-13 | 株式会社荏原製作所 | 基板ホルダに使用するシール |
Also Published As
Publication number | Publication date |
---|---|
TWI463527B (zh) | 2014-12-01 |
WO2006023753A3 (en) | 2009-06-25 |
WO2006023753A2 (en) | 2006-03-02 |
KR20070051337A (ko) | 2007-05-17 |
TW200614329A (en) | 2006-05-01 |
CN102790000B (zh) | 2016-06-29 |
TWI502620B (zh) | 2015-10-01 |
DE212005000047U1 (de) | 2007-08-02 |
EP1799446A4 (en) | 2010-03-03 |
EP1799446A2 (en) | 2007-06-27 |
TW201230144A (en) | 2012-07-16 |
AT10874U1 (de) | 2009-11-15 |
CN102790000A (zh) | 2012-11-21 |
KR20070048793A (ko) | 2007-05-09 |
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