TW201230144A - Method for thinning a semiconductor workpiece - Google Patents

Method for thinning a semiconductor workpiece Download PDF

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Publication number
TW201230144A
TW201230144A TW101109367A TW101109367A TW201230144A TW 201230144 A TW201230144 A TW 201230144A TW 101109367 A TW101109367 A TW 101109367A TW 101109367 A TW101109367 A TW 101109367A TW 201230144 A TW201230144 A TW 201230144A
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Taiwan
Prior art keywords
workpiece
back side
thickness
semiconductor
chamber
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TW101109367A
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Chinese (zh)
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TWI502620B (en
Inventor
Kert L Dolechek
Raymon F Thompson
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Applied Materials Inc
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Priority claimed from US10/922,762 external-priority patent/US20060040111A1/en
Priority claimed from US10/923,436 external-priority patent/US20060046499A1/en
Priority claimed from US10/923,132 external-priority patent/US7354649B2/en
Priority claimed from US10/923,363 external-priority patent/US7288489B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201230144A publication Critical patent/TW201230144A/en
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Publication of TWI502620B publication Critical patent/TWI502620B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02035—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

The present invention provides a system for use in processing semiconductor workpieces. A new apparatus and method allows for the production of thinner workpieces that at the same time remain strong. Particularly, a chuck is provided that includes a body, a retainer removeably attached to the body and a seal forming member. When a workpiece is placed on the chuck body and the retainer is engaged to the body, a peripheral portion of the back side of the workpiece is covered by the retainer while an interior region of the back side of the workpiece is exposed. The exposed back side of the workpiece is then subjected to a wet chemical etching process to thin the workpiece and form a relatively thick rim comprised of semiconductor material at the periphery of the workpiece. The thick rim or hoop imparts strength to the otherwise fragile, thinned semiconductor workpiece. The present invention provides for single workpiece thinning or thinning a batch of workpieces. Semiconductor workpieces made according to the present invention offer an improved structure for handling thinned wafers in conventional automated equipment. This results in improved yields and improved process efficiency.

Description

201230144 六、發明說明： 【發明所屬之技術領域】 本發明相關於與工件一起使用的方法及設備，其中工 件為例如半導體晶圓，平坦面板顯示器，剛性磁碟或光 學媒體，薄膜磁頭，或由上面可形成微電子電路，資料 儲存元件或層，或微機械元件的基板形成的其他工件。 這些及類似的物品在此通稱為「晶圓（wafer)」或「工 件（workpiece)」。明確地說，本發明相關於薄化半導體 工件用的方法及設備。 【先前技術】 最新技術的電子設備（例如行動電話，個人數位辅助 機，及智慧卡）要求較薄的積體電路裝置（ICD >另外’ 先進的半導體裝置的封裝（例如堆疊晶粒或倒裝片）提 供也要求超薄晶粒的尺寸封農限制。另夕卜，隨著icd的 操作速率的持續增加，熱散逸也變得日益重要。此大部 份是由於以極高速率操料ICD傾向於產生纟量的熱的 事實所造成。熱必須從ICD移去以防止由㈣應力㈣ 成的裝置故障’以及防止由於載子移動率的減小所造成 的頻率回應的退化。增進熱傳遞離開ICD因而緩和任何 有害的溫度效應的一種方式是藉著將製造icd的半導體 晶圓薄化（使其變得較薄)。薄化半導體晶圓的其他原因 包括訊號傳輸特性的最佳化，晶粒中導孔的形成，及個 201230144 別半導體裝置與封裝之間 化。 的熱膨脹係數的效應的極小 半導體晶圓薄化技術已曾回應此對於較小且性能較高 的ICD的日益增加的需求被開發。典型i，半導體裝置 是在裝置處於晶圓形式之下被薄化。晶圓厚度根據晶圓 的尺寸而不同。例如，150職（毫米）i徑的矽半導體 晶圓的厚度為大約65〇微米，而具有細&扇_的直 徑的晶圓為大約725微米厚。機械研磨半導體的背側為 薄化晶圓的一種標準方法。此種薄化被稱為「背部研磨 (back grinding)」。一般而言，背部研磨處理採用各種 方法來保護半導體晶圓的前側或裝置側。傳統的半導體 晶圓的裝置側的保護方法包括對晶圓的裝置側施加保護 帶或光抗蝕劑層。然後，晶圓的背側被研磨，直到晶圓 達到想要的厚度。 但是，傳統的背部研磨處理有缺點1械研磨在晶圓 的表面及邊緣誘發應力，包括微裂縫及邊緣碎片。此誘 發的晶圓應力可能引起性能退化及晶圓破裂，導致低的 產率。另外，使用背部研磨處理對於半導體晶圓可薄化 多少有限制。例如，具有標準厚度（如上所述者）的半 導體晶圓一般而言可被薄化至大約25〇至15〇微米的範 圍。 因此，通常在半導體晶圓已藉著背部研磨而被薄化之 後對半導體晶圓施加濕化學姓刻處理。此處理通常被稱 為應力釋放蝕刻，化學薄化，化學蝕刻，或化學拋光。 201230144 上述處理釋放晶圓中誘發的應力，從晶圓的背側移除研 磨痕跡，並且導致相當均勻的晶圓厚度。另外，背部研 磨之後的化學蝕刻將半導體晶圓薄化至超過傳統背部研 磨的能力。例如，在背部研磨之後使用濕化學蝕刻處理 容許標準的200及300mm的半導體晶圓被薄化至1〇〇 微米或比100微米更小。濕化學蝕刻典型上包含使晶圓 的背側曝露於氧化/還原劑（例如HF(氫氟酸），hN〇3 (硝酸），h3po4 (磷酸）’ H2S〇4 (硫酸））或者曝露於 苛性鹼溶液（例如KOH(氫氧化鉀），Na〇H(氫氧化鈉）， H2〇2 (過氧化氫））。濕化學蝕刻處理的例子可見讓渡給 本發明的焚讓人的2003年7月30曰申請的共同審查中 的美國專利申請案序號第1〇/63 ^”號。申請案序號第 1〇/631，376號的教示藉著參考結合於此。 雖然薄化半導體晶圓的方法為已知，但是其並非沒有 缺陷。例如，將半導體晶圓安裝於安裝件或通常所謂的 「夾頭（chuck )」成為使得晶圓可被薄化必須採用昂貴 的塗層及黏結設備及材料，必須有增長的處理時間，且 必須承爻將污染物引入處理區域的可能性。另外，可用 在機械研磨處理中的用來將晶圓黏結於夾頭的黏著劑不 月b抵抗濕化學蝕刻中所用的化學處理流體。另外，目前 的光抗蝕劑或黏著帶的使用無法在背部研磨處理期間或 後續的操縱（handling )及處理中為非常薄的晶圓提供 機械支撐。黏著帶的使用也在移除過程中產生障礙。例 如，黏著γ的移除可能使晶圓承受不想要有的彎曲應 201230144 力。在光抗蝕劑的情況中，是用溶劑來將材料從晶圓的 裝置側洗去，因而増加處理時間及化學物品的使用，並 且增加污染的可能性。膠黏及保護聚合物的使用也造成 商成本，因為必須有設備以及材料來施加及移除保護媒 質。 另外，薄化的半導體晶圓易於翹曲（warping)及弧狀 彎曲 易碎 bowing)。並且，因為薄化的半導體晶圓可能極為 所以也易於在進一步處理期間被操縱時破裂。薄 化的半導體晶圓（例如250措半l + U 川微木以下）也在自動化晶圓 操縱中呈現新增的問題，因枭—in_二_ 丄 囚马般而言，現有的操縱設 備已被設計來順應標準的晶圓厚度（例如15〇麵晶圓的 650微米及200及3〇〇mm晶圓的725微米 體工件的方法及設備有需 以將破裂的危險性減至最 求 因此，對於產生較薄的半導 。同時，對於提供足夠強固 小但疋維持與傳統的自動化丰遙 ^ 勒化牛導體晶圓操縱設備相容的 較薄工件有需求。最後，開 取傻间^出減少薄化半導體工件的 處理步驟的數目的系統會是报有利的。 【發明内容】 本發明提供處理半導體晶圓時所用的系統，方法^ 設備。創新的系統及設備容許生產較薄且同時維持強β 及對弧形彎曲和趣曲的抵抗 ★ 的方法所生產的晶圓較不易破二由本㈣ 也在減少處理步驟的數目 、方法及設備 Τ於#緃溥化的晶圓提供 201230144 改良的製品結構。 以及許多其他有利點。#進的產率及增進的處理效率 側，斜肖了：中及背本:::供用來接收及支樓具有裝置 體，用來，、導體工件的夾頭。夾頭具有本 成為可覆=件；扣持件’可移去地附著於本體，且 其組萍 …、件與卫件的背側之間形成密封。由於 離 ^ ^ _工件的背側的内部區域成為曝露狀 :二Γ護：件的背側的周邊部份。然後，工件經 小於⑽被#化。結果獲得具有薄化的主體（例如 至；25微米）及厚的周緣（rim)(例如在大約600 微米的範圍内）的處理過的半導體工件。相對而 周緣為薄化的卫件提供強度，並且容許工件可 在克的自動化操縱設備操縱以進行額外的處理。 面中，本發明提供具有由半導體材料構成的 及周緣的半導體卫件。主體成整體地連接於周緣， 且具有小於周緣厚度的大約50%的厚度。相對而言厚 :周緣為工件提供強度，防止主體弧狀彎曲及翹曲。同 ’ ’半導體卫件的主體可被薄化至小# 3G0微米的厚 度’較佳地為小於125微米’更佳地為小於100微米， 特别是小於50微米，i甚至是小於25微米。本發明的 薄化的半導體工件的結構組態符合對於今日的最新電子 °又備及先進封裝技術中所需的薄化的ICD的產業需求， 而同時降低由於薄化的工件的易脆狀態所造成的破裂危 201230144 險。 本：明也提供數種薄化半導體工件 中，方法包含將半導體工件置八― ：： 的大約抓成為曝露狀態。_ ^工件的背侧表面 學敍刻處理被薄化，…二/導體工件經由濕化 -.ΗΝ〇3，Η3Ρ〇"；；Ι；；：]：^---- 液（例如K〇H，NaOH，H2〇4 =疋曝露於苛性驗溶 „ ^ 2〇2)。在濕化學蝕刻步驟期 的曝露的背側被薄化至小於工件的濕化學㈣ 刖的厚度的50%的厚度。結果， 〇> a , ^ R ^ 周緣形成在工件的周邊 ，如業界中通常所稱的「排除區域（咖⑽。—」 處。周緣具有大致等於在濕化學_㈣前的1的厚 度的厚度（例如在600至725微米的範圍内）。工件的立 餘部份（亦即薄化的主體）具有小於周緣厚度的5〇%的 厚度（例如小於300微米，較佳地為小於125微米，更 佳地為小於100微米，特別是小於5〇微米且甚至是小 於25微米）。此方法消除與上述的薄化半導體工件的已 知方法相關聯的限制’而同時增加整體製造效率。 本發明也提供薄化-批半導體工件的方法。此方法包 含的步驟為將半導體X件置人炎頭本體内成為使得工件 的背側曝露，將一批工件插入載運器總成内，將載運器 總成載入轉子總成内成為使得半導體工件被定位成為具 有一傾斜度，旋轉轉子總成使其隨後提供旋轉運動給栽 運器總成及其内的工件，及噴淋處理流體至工件的曝露 201230144 。經由此系統，工件的背側被薄化至想要的厚 地小於125微米）。在卫件被薄化之後，所揭示 ::及系統提供對卫件的沖洗及乾燥。系統也提供用 過的處理流體的再循環及回收。 為執行半導體晶圓的成批處理，本發明也提供包含一 處理容室的系、統’此處理容室容許半導體卫件被成批地 濕化學薄化至小於125微米。處理容室包含容室本體， 其具有第-端部，外壁’及在第一端部處的引至一空穴 内的開口。處理容室在處理機器内被支撐成為具有一傾 斜度，並且處理容室内的半導體工件被類似地支撐成為 具有一傾斜度。門總成相鄰於容室本體的第一端部被設 置。門總成具有選擇性地關閉容室本體的開口的門。處 理容室也具有具有喷嘴的喷淋總成，以將處理流體喷淋 至容室本體的空穴内且至其内的半導體工件的曝露部份 上。在一實施例中，喷淋總成具有雙入口 /出口機構，其 將流體從相反方向引入處理容室内。 根據另一方面’處理容室具有排氣通道及出口或排泄 裝置。排氣通道排出來自處理容室的空穴的氣體及蒸 汽。排泄裝置移除來自處理容室的容室本體的空穴的過 量及用過的處理流體。排泄裝置可連接於再循環系統， 以將來自處理容室的過量及用過的處理流體傳送至傳送 槽。 根據另一方面’系統包含扣持多個工件的載運器總 成。載運器總成被定位在處理容室的空穴中且在處理容 201230144 室内旋轉，以容許被喷淋的處理流體在工件上有較佳的 涵蓋範圍。在-實施財，載運器總成具有繞其本體的 一長度的多個定位構件。定位構件被用來將半導體工件 扣持在載運器總成中的特定位置，並且被用來在相鄰的 半導體工件之間提供間隙。另外，由於載運器總成的定 位構件的幾何形狀，載運器總成中的卫件與載運器總成 一起旋轉並且也略微獨立於載運器總成的旋轉而旋轉。 根據另-方面，系統包含轉子總成。轉子總成被定位 在處理容室的空穴内，並且載運器總成被定位在轉子總 成的工八内。與處理容室相關聯的馬達驅動轉子總成， 以在容室本體的空穴内旋轉轉子總成。轉子總成隨後提 供旋轉運動給載運器總成及其内的半導體工件。 所述的本發明的方面的任何之_可被_次或多次地結 合及/或重複以達成最佳的結果。本發明也在於所述方面 的次級組合（SUb-c〇mbinati()ns )。本發明的這些及其他 目的’特徵’及有利點從以下參考圖式的本發明的較佳 貫施例的叙述會顯明。 【實施方式】 A.用來支樓半導體工件的夾頭 參考圖1A至1E，圖中顯干奸姑 μ r，.，、貝不根據本發明的一實施例 的用來在處理期間支撐半導體 、 甲組仟50的夾頭10。夹頭 10包含支標本體12，扣拉杜 ^符件14，及密封構件16，24。 扣持件14具有兩個凹槽岑 a 4凹18。密封構件16，24分 201230144 別被收容在兩個環狀凹槽1 8中。扣持件14較佳地成為 環圈的形式且被可移去地附著於支撐本體12。在使用時 ’具有裝置側51 ’斜削部（亦即周邊邊緣）52，及背側 53的工件50在裝置側51向下之下被放置在夾頭5〇的支 撐本體12的支撐表面28上。然後，扣持件丨4附著於支 撐本體12的外周邊。如圖1C明確所示地，當扣持件14 接合於支撐本體12時，扣持件14包裹支撐本體12的外 埏部且覆蓋工件5〇的背側53的周邊部份，因而將工件 5〇穩固在夾頭1〇中。 在接合時，扣持件14較佳地只覆蓋工件5〇的背侧 53的一小周邊部份，留下工件5〇的背側53的大部份於 曝露狀態。在較佳實施例中，由扣持件14覆蓋的背側^ 的表面區域從斜削部52向内延伸大約i至(毫米 )的距離’更佳地為在大約丨至5mm之間，且特別是在 大約2至4_之間。較佳地’工件5〇的背側53的表面 面積的至少叫或甚至是97%或99%)處於曝露狀態 、。然後，工件50的背側53的曝露部份承受處理流體且 她:至想要的厚度。由於工件5〇的背側53的周邊部 知在薄化期間被覆蓋，因此處理流體不能盥 t t ’、丄1干50的皆 =53的周邊火相互作用。因此，工件50的背側53的周邊 、·持與薄化前大致相同的形式，組態，及厚卢。 明的目的，在薄化之後存留在 為本發 ^ ,,,. 的周邊處的半導體 材料被稱為周緣（rim ) ^周緣對薄化 汁賤予強声 且今s午自動化操縱設備操縱根據本發 又 乃所處理的薄化的 12 201230144 半導體工件5 〇。 轉向圆ID及ιέ，為方便扣持件μ的附著於支撐本 體12，扣拉杜1 z 、牛14具有與形成於支撐本體12的凹部22合 的接。構件20。以此方式，達成扣持件14與支擇本體 之間的簡單機械扣合連接。雖然在圖1Α至1D中未顯 八 X本發明包含接合構件20從支撑本體.i2延伸且 與形成於扣持件M的凹部22合作以將扣持件Μ與支樓 本體12可移去地連接的組態。在任'组態中，接合構件 :〇及凹部22較佳地位在第一密封構件16與第二密封構 件24之間。 ，考圖ic，扣持件14具有有傾斜表面的外周邊 端部％。當扣持件14附著於支樓本體㈣，扣持件“ =周邊端部30的傾斜表面32與在支撐本體Η的外周 邊鳊部處的傾斜表面34 . 〜取缺口 30。缺口 30可接 =工具（未顯示）而方便扣持件14從支撑本體12的移 除。 C_ie，支樓本體12具有形成在其圓周上的 。邛或梯26。唇部26作用來在工件 件5〇被載入夹頭10 夺排％或引導工件50。當正確地對準時，工件％會整 =置在支樓本體12的支撐表面28上。雖然夾頭料 =形狀Γ例如正方形’矩形，圓形等)，但是如㈣ 主1E所不’在較佳實施例中， 微大#又碩為圓盤形且會具有稍 政大於要破處理的工件5〇的直徑的直徑。 現在參考圖2A及2B，fsitbs 中-員示根據本發明的夾頭 13 201230144 1 〇的另一實施例。如 1Λ , 如冋圖^至1Ε所示的夾頭10,夾頭 10包含支撐本體12 _ ,, 扣持件1 4。扣持件丨4具有設置在 核狀凹槽18，38内的笙 1的弟一及第二密封構件16，24。伸是 ’圖2Α及2Β所干納〜 疋 一 、的貰施例中的機械附著機構與圖1Α 至1Ε所示的機構赖 稍微不同。接合構件20從支撐本體12 周邊延伸。扣持件14則具有凹部22，其與支樓本體 、接°構件2G合作以提供將扣持件14附著於支標本 體12的簡早扣合式接合。包含密封構件16的扣持件14 的上方部份於接合位置覆蓋工件5〇的背側Μ的排除區 二夕1US1〇n Z〇ne )。在此較佳實施例中，扣持件14具 *、固冲洗孔4G，用來容許處理流體從形成於爽頭⑺的 工八排出°產生與接合構件2G的機械扣合連接的扣持件 W的：方部份42與支撐本體12的匹配下方部份扑一起 多成衣狀凹。p 44。工具（未顯示）可被插入環狀凹部切 内，以使扣持件14可在處理完成之後簡單地從爽頭1〇 的支撐本體12脫離。 在具有兩個密封構件1 6，24的實施例中（如圖lA 至1E及圖2A及2B所揭示者），密封構件w在工件 與扣持件14之間產生撓性界面及密封，以防止處理流體 、、（ccess )工件5〇的裝置側51及斜削部52。此撓性 界面也釋放在夹頭10的組裝及拆卸期間施加在工件5〇 上的—些應力。密封構件24在扣持件14與支撐本體12 之間產生撓性界面，並且也有助於釋放在夹頭1〇的組裝 及拆卸期間施加在工件5〇上的一些應力。 201230144 現在參考圖3A Bf π 圈^及3B至圖7八及7B，圖令顯示只具 有單-密_ 16的各種不同的夾頭1〇的設計。明確201230144 VI. Description of the Invention: [Technical Field] The present invention relates to a method and apparatus for use with a workpiece, such as a semiconductor wafer, a flat panel display, a rigid magnetic or optical medium, a thin film magnetic head, or The above may form microelectronic circuits, data storage elements or layers, or other workpieces formed by the substrate of the micromechanical components. These and similar items are collectively referred to herein as "wafers" or "workpieces." In particular, the present invention relates to methods and apparatus for thinning semiconductor workpieces. [Prior Art] The latest technology of electronic devices (such as mobile phones, personal digital assistants, and smart cards) require thinner integrated circuit devices (ICD > additionally 'advanced semiconductor device packages (such as stacked die or inverted) Loading) provides limits on the size of the ultra-thin grain. In addition, as the operating rate of icd continues to increase, heat dissipation becomes more and more important. This is due in large part to the high rate. The fact that ICD tends to generate heat of enthalpy is necessary. Heat must be removed from the ICD to prevent device failure caused by (iv) stress (iv) and to prevent degradation of frequency response due to reduced carrier mobility. One way to pass away from the ICD and mitigate any harmful temperature effects is by thinning the semiconductor wafer from which the icd is made (making it thinner). Other reasons for thinning the semiconductor wafer include optimization of signal transmission characteristics. The formation of via holes in the die, and the integration of a semiconductor device and package in 201230144. The effect of the coefficient of thermal expansion of the semiconductor wafer thinning technology has been back This is an increasing demand for smaller and higher performance ICDs. Typically, semiconductor devices are thinned while the device is in wafer form. The thickness of the wafer varies depending on the size of the wafer. For example, 150 The thickness of the germanium (millimeter) i-diameter semiconductor wafer is about 65 μm, and the wafer with the diameter of the thin & fan is about 725 μm thick. The back side of the mechanically ground semiconductor is a thinned wafer. Standard method. This thinning is called "back grinding." Generally, the back grinding process uses various methods to protect the front side or the device side of the semiconductor wafer. The protection of the device side of the conventional semiconductor wafer The method includes applying a protective tape or photoresist layer to the device side of the wafer. The back side of the wafer is then ground until the wafer reaches a desired thickness. However, conventional back grinding processes have disadvantages. The surface and edges of the wafer induce stresses, including micro-cracks and edge debris. This induced wafer stress can cause performance degradation and wafer rupture, resulting in low yields. The rubbing process has limitations on how thin the semiconductor wafer can be thinned. For example, a semiconductor wafer having a standard thickness (as described above) can generally be thinned to a range of about 25 Å to 15 〇 microns. The semiconductor wafer has been thinned by back grinding to apply a wet chemical treatment to the semiconductor wafer. This process is commonly referred to as stress relief etching, chemical thinning, chemical etching, or chemical polishing. The stress induced in the circle removes the abrasive traces from the back side of the wafer and results in a fairly uniform wafer thickness. In addition, chemical etching after back grinding thins the semiconductor wafer beyond conventional back grinding. For example, The use of a wet chemical etch process after back grinding allows standard 200 and 300 mm semiconductor wafers to be thinned to less than 1 micron or less than 100 microns. Wet chemical etching typically involves exposing the back side of the wafer to an oxidizing/reducing agent (eg, HF (hydrofluoric acid), hN〇3 (nitric acid), h3po4 (phosphoric acid) 'H2S〇4 (sulfuric acid)) or exposure to causticity An alkaline solution (for example, KOH (potassium hydroxide), Na〇H (sodium hydroxide), H2〇2 (hydrogen peroxide)). An example of a wet chemical etching process can be found in U.S. Patent Application Serial No. 1/63^", which is assigned to the inventor of the present invention. The teachings of 631, 376 are incorporated herein by reference. Although the method of thinning a semiconductor wafer is known, it is not without defects. For example, mounting a semiconductor wafer on a mounting or a so-called "chuck" The need to use expensive coating and bonding equipment and materials to make wafers thinner must have increased processing time and the possibility of introducing contaminants into the processing area. In addition, the adhesive used to bond the wafer to the chuck in the mechanical grinding process is resistant to the chemical treatment fluid used in wet chemical etching. In addition, the use of current photoresists or adhesive tapes does not provide mechanical support for very thin wafers during backgrinding or subsequent handling and processing. The use of adhesive tape also creates obstacles in the removal process. For example, removal of the adhesive gamma may expose the wafer to unwanted bends of 201230144. In the case of a photoresist, a solvent is used to wash the material from the device side of the wafer, thereby increasing the processing time and the use of chemicals, and increasing the possibility of contamination. The use of adhesives and protective polymers also creates cost because of the necessity of equipment and materials to apply and remove the protective media. In addition, thinned semiconductor wafers are prone to warping and arcing and brittle bowing. Also, because the thinned semiconductor wafer may be extremely large, it is also susceptible to cracking when manipulated during further processing. Thinned semiconductor wafers (such as 250 1/2 half + U Chuanmumu) also present new problems in automated wafer manipulation, because of the 操纵-in_二_ 丄 丄 般Methods and equipment that have been designed to conform to standard wafer thicknesses (eg 650 micron and 650 micron workpieces of 15 〇 wafers and 200 and 3 〇〇 mm wafers) are required to minimize the risk of rupture Therefore, it is necessary to produce a thinner semi-conductor. At the same time, there is a need to provide a thinner workpiece that is sufficiently strong and small to maintain compatibility with the conventional automated Fengmano-powered beef conductor wafer handling device. It would be advantageous to have a system that reduces the number of processing steps for thinning semiconductor workpieces. SUMMARY OF THE INVENTION The present invention provides systems, methods, and apparatus for processing semiconductor wafers. Innovative systems and devices allow for thinner production At the same time, the method of maintaining strong β and resistance to curved bending and interesting music is less likely to be broken. This (4) is also reducing the number of processing steps, methods and equipment. 1230144 Improved product structure. And many other advantages. #进的效率 and enhanced processing efficiency side, oblique: middle and back::: for receiving and supporting the building with device body, for, conductor The collet of the workpiece. The collet has a cover that can be covered; the retaining member is removably attached to the body, and the seal is formed between the member and the back side of the guard. Since ^ ^ _ The inner region of the back side of the workpiece becomes exposed: the peripheral portion of the back side of the member. Then, the workpiece is etched by less than (10). As a result, a thinned body (for example, to 25 μm) and thick is obtained. The treated semiconductor workpiece of the rim (for example, in the range of about 600 microns) provides strength to the thinned guard, and allows the workpiece to be manipulated in grams of automated handling equipment for additional processing. In one aspect, the present invention provides a semiconductor shield having a semiconductor material and a peripheral edge. The body is integrally joined to the periphery and has a thickness that is less than about 50% of the thickness of the perimeter. Relatively thick: the perimeter provides the workpiece Degree, to prevent the body from bending and warping. The body of the semiconductor guard can be thinned to a thickness of less than 3G0 microns, preferably less than 125 microns, more preferably less than 100 microns, especially less than 50 microns, i even less than 25 microns. The structural configuration of the thinned semiconductor workpiece of the present invention meets the industrial needs of the thinned ICD required in today's latest electronic and advanced packaging technologies, while reducing Due to the fragile state of the thinned workpiece, the risk of rupture is 201230144. Ben: Ming also provides several kinds of thinned semiconductor workpieces, including the method of placing the semiconductor workpieces at eight-:: about the exposed state. The backside surface characterization process is thinned, ... the second/conductor workpiece via humidification - ΗΝ〇3, Η3Ρ〇";;;;:]:^---- liquid (eg K〇H, NaOH, H2〇4 = 疋 exposure to caustic solubilization „ ^ 2〇 2). The exposed back side during the wet chemical etching step is thinned to a thickness less than 50% of the wet chemical (tetra) thickness of the workpiece. As a result, 〇> a , ^ R ^ is formed around the periphery of the workpiece, as commonly referred to in the industry as the "excluded area (Cai (10).-". The circumference has a thickness substantially equal to 1 before the wet chemical _ (four) Thickness (eg, in the range of 600 to 725 microns). The remainder of the workpiece (ie, the thinned body) has a thickness less than 5% of the thickness of the perimeter (eg, less than 300 microns, preferably less than 125 microns) More preferably less than 100 microns, especially less than 5 microns and even less than 25 microns. This method eliminates the limitations associated with the known methods of thinning semiconductor workpieces described above while increasing overall manufacturing efficiency. The invention also provides a method of thinning a batch of semiconductor workpieces. The method comprises the steps of placing a semiconductor X piece into a body of the body to expose the back side of the workpiece, inserting a batch of workpieces into the carrier assembly, and carrying the carrier The assembly is loaded into the rotor assembly such that the semiconductor workpiece is positioned to have an inclination, the rotating rotor assembly provides subsequent rotational motion to the carrier assembly and the workpiece therein, and the spray Treatment fluid to the exposed workpiece 201,230,144. Via this system, the back side of the workpiece is thinned to a desired thickness less than 125 microns). After the guard is thinned, the revealed :: and system provides for the rinsing and drying of the guard. The system also provides recycling and recycling of used process fluids. To perform batch processing of semiconductor wafers, the present invention also provides a system comprising a processing chamber that allows the semiconductor shield to be wet chemically thinned to less than 125 microns in batches. The processing chamber includes a chamber body having a first end, an outer wall 'and an opening at the first end that leads into a cavity. The processing chamber is supported within the processing machine to have a degree of tilt and the semiconductor workpiece within the processing chamber is similarly supported to have an inclination. The door assembly is disposed adjacent to the first end of the chamber body. The door assembly has a door that selectively closes the opening of the chamber body. The processing chamber also has a spray assembly having a nozzle for spraying a treatment fluid into the cavity of the chamber body and onto the exposed portion of the semiconductor workpiece therein. In one embodiment, the spray assembly has a dual inlet/outlet mechanism that introduces fluid from the opposite direction into the processing chamber. According to another aspect, the processing chamber has an exhaust passage and an outlet or drain. The exhaust passage discharges gas and vapor from the cavity of the processing chamber. The drain removes excess of voids from the chamber body of the process chamber and used process fluid. A drain may be coupled to the recirculation system to deliver excess and used process fluid from the process chamber to the transfer tank. According to another aspect, the system includes a carrier assembly that holds a plurality of workpieces. The carrier assembly is positioned in the cavity of the process chamber and rotated within the process volume 201230144 to allow the sprayed process fluid to have a better coverage on the workpiece. In the implementation, the carrier assembly has a plurality of positioning members of a length about its body. Positioning members are used to hold the semiconductor workpiece in a particular position in the carrier assembly and are used to provide clearance between adjacent semiconductor workpieces. Additionally, due to the geometry of the positioning member of the carrier assembly, the guard in the carrier assembly rotates with the carrier assembly and also rotates slightly independent of the rotation of the carrier assembly. According to another aspect, the system includes a rotor assembly. The rotor assembly is positioned within the cavity of the process chamber and the carrier assembly is positioned within the assembly of the rotor assembly. A motor associated with the process chamber drives the rotor assembly to rotate the rotor assembly within the cavity of the chamber body. The rotor assembly then provides rotational motion to the carrier assembly and the semiconductor workpiece therein. Any of the aspects of the invention described may be combined and/or repeated _ times or more to achieve optimal results. The invention also lies in the sub-combination of the aspects (SUb-c〇mbinati() ns). These and other objects and features of the present invention will become apparent from the following description of the preferred embodiments of the invention. [Embodiment] A. A chuck for a semiconductor workpiece of a building is referred to Figs. 1A to 1E, and the figure is not used to support the semiconductor during processing according to an embodiment of the present invention. , Group 10 仟 50 chuck 10 . The collet 10 includes a support body 12, a pull-up member 14, and sealing members 16, 24. The retaining member 14 has two recesses 4 a 4 recesses 18. The sealing member 16, 24 points 201230144 is not housed in the two annular grooves 18. The retaining member 14 is preferably in the form of a loop and is removably attached to the support body 12. In use, the workpiece 50 having the device side 51' beveled portion (i.e., the peripheral edge) 52, and the back side 53 is placed below the device side 51 downwardly on the support surface 28 of the support body 12 of the collet 5〇. on. Then, the holding member 丨4 is attached to the outer periphery of the support body 12. As clearly shown in FIG. 1C, when the fastening member 14 is engaged with the support body 12, the holding member 14 wraps the outer crotch portion of the support body 12 and covers the peripheral portion of the back side 53 of the workpiece 5, thereby placing the workpiece 5 〇 Stabilize in the chuck 1〇. When engaged, the retaining member 14 preferably covers only a small peripheral portion of the back side 53 of the workpiece 5, leaving substantially the exposed side of the back side 53 of the workpiece 5〇 in an exposed state. In a preferred embodiment, the surface area of the back side covered by the retaining member 14 extends inwardly from the beveled portion 52 by a distance i of about i to (mm), more preferably between about 丨 and 5 mm, and Especially between about 2 and 4_. Preferably, at least or even 97% or 99% of the surface area of the back side 53 of the workpiece 5 is in an exposed state. The exposed portion of the back side 53 of the workpiece 50 is then subjected to the treatment fluid and her: to the desired thickness. Since the peripheral portion of the back side 53 of the workpiece 5 is covered during thinning, the processing fluid cannot interact with the surrounding fire of φ t t ', 丄1 dry 50 = 53. Therefore, the periphery of the back side 53 of the workpiece 50 is held in substantially the same form, configuration, and thickness as before thinning. For the purpose of Ming, the semiconductor material remaining at the periphery of the hair, is called the periphery (rim) after the thinning, and the periphery is used to make a strong sound to the thinned juice. This issue is also processed by the thinned 12 201230144 semiconductor workpiece 5 〇. In order to facilitate the attachment of the buckle member μ to the support body 12, the buckled ID and the yoke 14 are coupled to the recess 22 formed in the support body 12. Member 20. In this way, a simple mechanical snap connection between the retaining member 14 and the support body is achieved. Although not shown in FIGS. 1A to 1D, the present invention includes the engaging member 20 extending from the support body .i2 and cooperating with the recess 22 formed in the holding member M to removably hold the holding member and the branch body 12. The configuration of the connection. In any configuration, the engagement members: the turns and recesses 22 are preferably positioned between the first sealing member 16 and the second sealing member 24. In the figure ic, the holding member 14 has an outer peripheral end portion having an inclined surface. When the holding member 14 is attached to the main body (4), the holding member "= the inclined surface 32 of the peripheral end portion 30 and the inclined surface 34 at the outer peripheral crotch portion of the supporting body". The notch 30 is taken. The notch 30 can be connected. = tool (not shown) to facilitate removal of the retaining member 14 from the support body 12. C_ie, the wagon body 12 has a cymbal or ladder 26 formed on its circumference. The lip 26 acts to be placed on the workpiece member 5 The loading collet 10 captures % or guides the workpiece 50. When properly aligned, the workpiece % will be placed on the support surface 28 of the wagon body 12. Although the collet = shape, such as a square 'rectangle, a circle Etc.), but as in (4) the main 1E does not. In the preferred embodiment, the micro-large is also disc-shaped and will have a diameter slightly larger than the diameter of the workpiece 5〇 to be broken. Referring now to Figure 2A and 2B, fsitbs-indicator shows another embodiment of the collet 13 201230144 1 根据 according to the invention. For example, the collet 10 according to the figure ^ to 1 ,, the collet 10 comprises a support body 12 _ , , buckle Holding member 14. The holding member 4 has the first and second sealing members 16 and 24 of the crucible 1 disposed in the core-shaped recesses 18, 38. The mechanical attachment mechanism in the embodiment of the present invention is slightly different from the mechanism shown in Figs. 1A to 1B. The joint member 20 extends from the periphery of the support body 12. The holding member 14 There is a recess 22 that cooperates with the wagon body and the attachment member 2G to provide a simple snap-fit engagement for attaching the clasp 14 to the wand body 12. The upper portion of the clasp 14 including the sealing member 16 is The engagement position covers the exclusion zone of the back side of the workpiece 5〇1US1〇n Z〇ne). In the preferred embodiment, the fastening member 14 has a *, a solid flushing hole 4G for allowing the treatment fluid to form. The hooking of the head (7) produces a latching member W that is mechanically coupled to the engaging member 2G: the square portion 42 and the matching lower portion of the supporting body 12 are together in a garment-like recess. p 44. (not shown) can be inserted into the annular recess to allow the clasp 14 to be easily detached from the support body 12 after the treatment is completed. Embodiments having two sealing members 166, 24 Medium (as disclosed in Figures 1A to 1E and Figures 2A and 2B), the sealing member w is in the workpiece A flexible interface and seal are formed between the retaining members 14 to prevent the treatment fluid, the device side 51 of the workpiece 5 and the beveled portion 52. This flexible interface is also released during assembly and disassembly of the collet 10. Some of the stresses exerted on the workpiece 5. The sealing member 24 creates a flexible interface between the clasp 14 and the support body 12 and also facilitates the release of the workpiece 5 during assembly and disassembly of the collet 1〇. Some of the stresses above. 201230144 Referring now to Figures 3A Bf π circle ^ and 3B to Figures 7 and 7B, the figure shows the design of a variety of different chucks 1 Having only a single-dense _ 16. clear

地說’圖3 A及3 R S5 - 4* TT 顯不夾頭10,其具有扣持件14，支撐 本體12，及類似於圖2aub所示且如上所述的接合機 構的接合機構。但是’扣持件14只具有單—環狀凹槽18 ，其可收容密封構件16。在此實施例中，環狀凹槽18為 V形’且接收正方形的可壓縮密封構#…較佳地，正 方形的密封構件16具有從每一角落凸出的半圓形延伸部 份，以確保在凹槽18中的適當裝配。 圖4A及4B以及圖5八及56顯示的夹頭具有在 圓周上附著於支樓本體12的底部外周邊的接合環圈48 。接合環圈48從支撐本體12徑向向外延伸，在支撐本 體12與接合環圈48之間產生階梯狀關係，並且形成接 合構件2〇。扣持件14具有下方部份42,其形成有μ 凹部22。U形凹部22接收接合構件2〇。扣持件μ的下 方部份42具有延伸部份49，其包裹接合構件2〇以在扣 持件14肖支撐本體12的接合環_ 48《間形成機械扣合 連接。在圖4Α及4Β中，扣持件14具有兩個階梯狀環狀 :槽18,其接收密封構件16，而密封構件㈣有有第 —寬度以用來插入環狀凹槽18的第_階梯内的頂部部份 ，及有第二寬度以用來插入環狀凹槽18的第二階梯内的 1部部份。在圖5Α及SB中，扣持件14具有單一 乂形 衣狀凹槽1 8，用來收容在此實施例中為可壓縮◦形環的 密封構件1 6。 15 201230144 圖6A及6B顯示根據本發明的夾頭ι〇的另一較佳實 ::。在此實施例中’扣持件14的下方部份42具有内 貝6〇’其具有從其向外延伸的凸出妝 Γ、1甲扪凸出狀凸出部62。支撐 本具有端壁64,其具有凹入狀凹部“，用來接收 扣持件14的下方部份42 、 J n w的凸出狀凸出部62 。以此方式’扣持件14接合支撐. — σ文仿尽體12且將工件50固 定在夾頭10的支撐表面28上。 在只具有單一密封構件16的實施例中（如圖3Α及 3Β至圖6Α及印所揭示者），密封構件16在工件與 支撐本體12之間產生撓性界 丨囬u防止處理流體與工件 50的裝置側5 1及斜削部52相互作田* 、 邗互作用，並且釋放在組裝/ 斥卸過程期間施加在工件上的應力。 現在轉向圖7A及7B，圖中gg-力丄人 圓中顯不結合先前實施例的 扣持件1 4及密封構件1 6的夾頭 ^ 久頌10的較佳實施例。在此 貫施例中，扣持件丨4為單一 平汲件的可壓縮環狀環圈，其 具有在圓周上延伸通過扣持件 行什14的中間的環狀凹槽18 。支撐本體12具有外端部13，| v、破插入扣持件1 4的環 狀凹槽18内。扣持件14由於由 田於由扣持件14施加在支撐本 體12及工件50上的壓缩六品抓 查縮力而維持接合於支撐本體12。 於附著位置，工件50的外周邊邱 Π遠°卩伤（例如排除區域）也 位在環狀凹槽1 8内。在此較佳眘 竿乂1圭實施例中，扣持件14盥 工件50的背側53 —起產生 '、 在封’因而防止處理流體在 處理期間通達工件5〇的斜削部52及裝置側5卜 以下討論適合用於根據本發明的夹頭1〇的實施例的 16 201230144 材料。一般而言，夾頭10可由穩定且具有高度化學抵抗 性的數種不同聚合物材料製成。較佳地，支樓本體12包 含聚四氟乙烯（polytetrafluoroethylene )，而扣持件14 較佳地包含氟聚合物（fluoropolymer )，例如由AtoHna Chemicals以商品名KYNAR販售的聚偏氟乙烯（ polyvinylidene fluoride )。在圖7A及7B所示的實施例中 ’扣持件14較佳地由具有小於氟聚合物的硬度但是大於 以下相關於密封構件所討論的彈性體材料的硬度的硬度 s十硬度（Durometer hardness)的材料形成。亦即，可被 壓縮至足以與工件50 —起形成密封但是強勁至足以為扣 持件14提供用來接收支撐本體1 2的結構的材料。在本 發明的任何實施例中，為增進扣持件1 4對支撐本體i 2 的可附著性’支撐本體1 2較佳地由具有比形成扣持件J 4 的材料的硬度計硬度大的硬度計硬度的材料構成。 如圖1A至IE ’ 2A及2B，5A及5B，以及6A及6B 所示，密封構件16’24較佳地形成為如同r 〇形環（〇_Hng )」’但是其他形狀也可被使用（如圖3a及3B以及圖4A 及4B所示者）。密封構件！ 6，24較佳地由具有等於或大 於50的硬度計硬度的可壓縮材料形成。合適的彈性體材 料的特定例子包括由杜邦（DuP〇nt)以商品名Kalrez販 售的全氟彈性體（perfluoroelastomer)，由 Greene, Tweed & Co·以商品名chemraz販售的全氟彈性體，由杜邦以商 名Viton販售的乱彈性體（fiu〇r〇eiast〇rner)，及以商品 名EPDM販售的碳氫化合物（hydr〇carb〇n )彈性體。 17 201230144 Β·用來薄化單導體工件的方法 現在轉向根據本發明的工件薄化處理方法，圖"員 不可在上述的夾頭1〇及工件5〇被用來薄化工件5〇的背 側53時實施的方法的—實施例。於步驟200 4，具有褒 置側5卜斜削部52’及背側53的工件5〇被提供。工件 的月側53取決於其尺寸會具有給定的表面面積。並且 ，工件50具有給定厚度。 於步驟210處，工件5〇在裝置側51直接緊鄰於爽 頭10的支#本體12之下被放置在炎頭1G的支揮表面28 上扣持件14附著於支撐本體12成為使得工件的背 側53的周邊部份（例如工件5()的排除區域）被覆蓋。 在步驟210中，工件50被固定於夾頭10。由於夾頭1Q 的組態’在將扣持件14附著於支撐本體12 _，在步驟 220中’背側53的表面面積的大部份（且較佳地為至少 95%，更佳地為至少97%，並且特別為至少99%)被曝露 ，而工件50的背側μ的一小周邊部份被覆蓋。 然後，工件50於步驟23〇處藉著施加處理流體於工 件50的曝露的背側53而被薄化至想要的厚度。由於扣 持件14的重疊組態，藉著薄化工件的曝露的背側，於 步驟240處’-周緣及—主體形成於工件5〇。周緣形成 在工件50的外周邊處且具有厚度以，而工件5〇的主體 具有厚度MBT。在圖8的較佳實施例中，MBT小於灯 的大約50°/。。想要的MBT較佳地小於RT的大約， 18 201230144 更佳的為小於RT的大約30%，特別是小於RT的大約2〇% ，且甚至是小於RT的大約1〇%。應瞭解在薄化工件5〇 之後，RT應與薄化處理之前的工件5 〇的厚度大致相同 。因此，對於傳統的200mm及300mm工件，薄化後的 RT為大約725微米。並且，傳統的15〇mm工件在薄化之 後的RT為大約6 5 0微米。 但是，處理先前已曾藉著某一其他方法例如機械研 磨被薄化的工件50也在本發明的範圍内。因此，具有從 150至725微米的任何厚度的工件5〇可根據本發明被薄 化而產生具有厚度為RT的周緣及厚度為MBT的主體的 工件50，其中RT是在與工件5〇大致相同的厚度的範圍 (亦即大約150至725微米，甚至是大約6〇〇至725微 米，或甚至是大約300至725微米），並且MBT是在大 約25至3 00微米的範圍，較佳地是在大約1〇〇至125微 米的範圍，更佳的是在大約5〇 i j 〇〇微米的範圍，特別 疋在大約25至50微米的範圍。 現在轉向圖9,圖中顯示可在上述的夾頭1〇被用來 薄化工件5〇時實施的方法的另一實施例。於步驟300處 ，具有厚度WPT的工件5〇被提供。工件5〇具有裝置側 51斜削部52，及背側53。工件50於步驟310處在裝 置側51直接緊鄰於夾頭1〇的支撐本體I?之下被放置在 央員10上。於步驟32〇處，扣持件14附著於支撐本體 12成為使得工件50的背側53的周邊部份被覆蓋。在此 步驟中 ~r /J_ . ’件50被固定於夾頭10。由於夾頭10的組態 19 201230144 ，當扣持件1 4附著於支撐本體丨2時，除了被覆蓋的排 除區域外’工件5 0的背側5 3大致上全部被曝露。 仍然參考圖9’於步驟330處，夾頭1〇及工件5〇被 置入一處理容室内。處理容室可為手動式或自動化，並 且較佳地是在一喷淋酸工具平台（spray acid t〇〇i platform)内’如可從蒙大拿州的KaHspeU的以他〇〇1， Inc·取彳于者。一旦在處理容室的内部，處理流體就於步驟 34〇處施加於工件50的曝露的背側53。步驟34〇的薄化 處理較佳地包含傳統的濕化學蝕刻處理或拋光處理。在 任種處理中，處理流體較佳地由去離子水，過氧化氫 ，臭氧，氫氧化鉀，氫氧化鈉，氫氟酸，硝酸，硫酸， 矽酸’及磷酸之一或其组合構成。取決於要被處理的特 別表面及要被移除的材料，也可使用多種其他酸性及鹼 性溶液。 處理"IL體可以任何傳統方式施加於工件5 〇。但是， 在較佳實施例中’處理流體經由一喷嘴或多個喷嘴而被 喷淋在工件50的背側53上。在另一較佳實施例中夾 頭及工件50被浸入一處理流體體積内，或依序被浸 入多個相同處理流體體積（於不同濃度或溫度）或多個 不同處理流體體積内。 旦取决於要被矛多&的材才斗的成分及要被矛多&的材料的 量^即所想要的最終工件厚度），4理流體會具有想要 餘^ '服度，及流里。藉著監控及保持這些處理流體 變數’處理流體可以用第一飯刻率施加於工件5〇的曝露 20 201230144 的背側53，然後隨後以第二蝕刻率施加。較佳地，第一 餘刻率大於第二㈣率。亦即，半導體材料先被快速地 蝕去，然後隨著工件50的厚度趨近想要的厚度而較緩慢 地被姓去。 參考圖9的步驟350’薄化處理於工件5〇形成周緣 70及主體72。薄化處理被執行直到主體72達到想要的 厚度MBT。較佳地，MBT小於赠的5〇%，更佳地小 於wpt的40%，甚至更佳地小於赠的3〇%，特別是 小於WPT的2〇%，並且特佳地小於赠的抓。較佳 的是在整個薄化處理期間測量半導體工件5〇的主體Μ 的厚度。此可藉著在處理容室_採用傳統的紅外線監控 技術而達成’或藉著任何其他已知的測量技術例如電容 測量技術而達成。如果需要’上述的處理流體變數可根 據工件厚度的持續監控被調整。 於步驟3 6 〇處，蓮#的τ I < Λ、木、丄丄 /専化的工件50破沖洗及乾燥。例如 ，工件可在沖洗步驟期間被喷淋以去離子水流，氮流， 或’然後可承受任何—種或多種已知的乾燥技術 。最後’工件50從夹頭被移去（步驟37〇)，並且薄化的 工件50被切塊成為多個晶粒（步驟3 )。 C_用來薄化半導體工件$成批處理容室及系統 根據本明的半導體工件5 〇的薄化可對單—工件 執行或同時對多個T # c Λ 1 > , 件5 0執行。當薄化多個工件$ 〇 ’想要的是將每—工杜 工件50置入相應的夾頭1 〇内，然 21 201230144 將此多個夹頭10及工件50置入—栽運器 審查中的美國I利申咬宏楚 j如共同 函專利申晴案第10/200,074 0M75號中所揭示的載運拔及第 、 旦^個工件50 (及相關聯的夾頭1〇) 被置入載運器，載運古恭 戰連益沈破載入處理容器内，並且 流體施加於多個工杜$ n从ng + & # … 夕1U工件5〇的曝路的背側53。為確保處 體適當地施加於工件5 〇，較佳的B卢 肝川杈佳的疋在處理期間旋轉處理 谷器内的夾頭10或載運器或是旋轉二者。處理容器可為 獨立機具’或為構成較大的工件處理系統的多個工作站 之一 〇 現在參考圖12，13，及27，圖中顯示用來處理工件 412的機器或機具41〇。機具41〇較佳地包含收容第—處 理模組416及第二處理模組418的機箱414，但是可瞭解 額外的工作進行中的槽箱或模組也可被設置在機具410 中。第一處理模組416典型上為薄化半導體工件412的 處理谷室’例如圖丨4所示的處理容室42〇，而第二處理 模、.且4 1 8典型上為在工件4丨2已被薄化之後乾燥及沖洗 工件412的乾燥及沖洗容室422。機具41〇也具有電子控 制區域425，其與諸如控制面板424，顯示器426，及用 來控制及監控系統的操作的處理器等設備相關聯。另外 ’機具4 1 0具有收容工作進行中的槽箱的另一模組427 。以下會詳細敘述系統的其他特徵及組件。 如以上所說明的’在此系統中，多個工件412在處 理容室420中被薄化。在較佳實施例中，在被置入處理 22 201230144 容室420之前，每一工件412分別被安裝於用來處理的 各別夾頭430。工件與各種不同夹頭組態之間的配置已在 以上相關於圖1至7被詳細敘述。然後，多個已安裝的 工件被置入用來扣持多個工件4丨2的載運器總成452内 。參考圖15及16，載運器總成452大致繞工件的周邊部 份扣持工件412。在此實施例中’載運器總成452包含互 相連接以形成整個載運器總成452的第一載運器構件454 及第二載運器構件4 5 6。大約2 5個工件4 12可被扣持在 此載運器總成452内。載運器構件454，456的每一個具 有多個支撐腿458以對載運器總成452提供剛性。在較 佳實施例中，如圖15所示，載運器構件454，456的每 一個具有四個控向延伸且大致等距間隔開的支撐腿458 。支撐腿45 8之間的間隔容許處理流體在處理容室々μ 中到達工件412。另外，支撐腿458具有多個穿通的開孔 460 ’以減小載運器構件454，456的重量。如圖15所示 ’ g第及第一載運器構件454，456結合時，第一及第 二接合構件457，459從載運器總成452延伸。接合構件 457，459與轉子總成474 (以下會說明）配合以將載運 器總成452定位地扣持在轉子總成474内。 載運器總成452具有中心鑽孔區域462。在中心鑽孔 區域462的周邊處，载運器總成具有多個定位構件 464，其將半導體工件412定位及扣持在載運器總成452 内。定位構件464從支撐腿458大致徑向向内延伸。如 此，定位構件464在載運器總成452中的相鄰工件412 23 201230144 之間提供間隙，以容許處理流體與工件412的整個背側 相互作用。如圖i 6中最佳顯示的定位構件偏有助於 將如以上所說明的被安裝於夾頭430的工件412在邊緣 上扣持在載運器總成452中。然而，定位構件464的幾 何形狀大致容許工件412在被定位在載運器總成452中 時於軸向以及旋轉方向均可稍微自由移動。如此，工件 412可在載運總成452内略微獨立旋轉。載運器總成 452典型上由聚四氟乙烯或不銹鋼製成。在較佳實施例中 ’載運器總成由聚四氟乙烯製成。 另一載連器總成466顯示在圖1 7中。在此實施例中 ’載運器總成466具有第一端板468，第二端板470，及 在第一端板468與第二端板47〇之間延伸的多個連結構 件472。連結構件472中的至少一個具有從其懸垂且徑向 向内延伸的足位構件464，以將工件4 1 2定位及扣持在載 運益總成466内。如同在上述的載運器總成452中，此 載運斋總成466中的定位構件464有助於將固定於失頭 430的工件412在邊緣上扣持在.載運器總成466中。另外 ，如同在上述的載運器總成中，定位構件464容許工件 41 2在被定位在載運器總成466中時於袖向以及旋轉方向 均可稍微自由移動。載運器總成452，466可被用來處理 具有各種不同尺寸的工件412，但是其典型上形成為處理 某一尺寸的工件412，例如2〇〇mm或300mm直徑的半導 體晶圓ϋ 在適當的載運器總成（為舉例的目的，此揭示在此 24 201230144 處的進一步討論中會使用載運器總成452 )載有工件412 之後，其被裝配於容納在處理容室420的空穴5〇6中的 轉子總成474。轉子總成474的一例顯示在圖18及19中 ’並且載有載運器總成452的轉子總成474的一例顯示 在圖14中。轉子總成474大致包含大致圓柱形轉子476 ’大致圓形底座板478 ’及驅動軸480。轉子476具有外 晨482，底座484，及在底座484與外環482之間延伸的 多個連接構件486。空穴488被界定在底座484的内部， 連接構件486,與外環482之間。空穴488的形狀成為可 接受載運器總成452。驅動軸480連接於驅動板49〇，其 與驅動軸480 —起旋轉。多個輔助驅動桿492又連接於 驅動板490。驅動桿492延伸通過連接構件486以輔助驅 動轉子總成474。典型上，轉子476是由聚四氤乙烯製成 ，但是其他材料也可接受。另外，為保持充分的剛性， 但是減小重量，輔助驅動桿492是由碳石墨（carb〇n graphite )製成❶驅動軸480及驅動板490典型上是由不 銹鋼或某一其他適當材料製成。密封件494被用來確保 處理流體不會進入轉子總成474的内部組件内。 參考圖14及22,載運器總成452被載入在處理容室 42〇的空穴506中的轉子總成474内。處理容室42〇包含 4室本體496，其具有第一端部498，第二端部5〇〇，外 漉5〇2，及在容室本體490的第一端部498處的引至處理 今至420的空穴506内的開口 5〇4。空穴5〇6的形狀成為 各納充填有載有多個工件412的載運器總成M2的轉子 25 201230144 總成474。容室本體496可具有連接於容室本體a%的第 一端部498的開口環總成497。在較佳實施例中，容室本 體496是由厚的（例如大約25mm厚的）聚四氟乙烯製 成。此材料對於蝕刻/薄化處理中所用的各種不同的件勉 性及腐蝕性蝕刻劑而言具有惰性。但是，可瞭解提供井員 似tm質的其他材料也可被使用。或者，處理容室42〇 具有由此種材料製成的襯襄5 0 7。 處理容室420也具有連接於其的各種不同總成包 括門總成5 0 8及馬達總成5 12。如圖14及21所示，馬達 總成512大致包含馬達514及安裝板516。馬達514連接 於女裝板5 1 6 ’而安裝板5 1 6又連接於處理容室42〇的容 室本體496的第二端部500。在較佳實施例中，馬達512 為無刷式D.C_ (直流）伺服馬達。如圖23所示，轉子總 成474的驅動軸48〇延伸至處理容室42〇的外部且通過 容室本體496的第二端部500的開孔518。驅動軸48〇插 入馬達5 14内以容許馬達5 14驅動驅動軸48〇(亦即對驅 動軸480提供旋轉運動）。因此，經由轉子總成474的驅 動軸480,馬達514可旋轉載運器總成452及其内的工件 412 〇 處理各室420也包含將處理流體喷射至處理容室内 的喷淋總成5 1 0。在較佳實施例中，喷淋總成5 1 〇與處理 谷室420成整體。在圖14及圖20至24所示的較佳實施 例中，喷淋總成51〇具有一對雙（dual)重疊喷淋歧管 52〇，以提供較均勻的處理流體的傳送。歧管520的每一 26 201230144 receptacle) 523内的多個噴嘴522，及多個開口 525，而 處理流體從喷嘴522經由開口 525被噴淋至處理容室 内。歧管520在入口通口 521處接收來自傳送槽⑷的 處理流體，並且將處理流體沿著歧管52〇的長度分佈於 多個喷嘴522,如圖24所示。喷嘴扣持件524 ^喷嘴 522。喷嘴522在工件被轉子總成474旋轉時將處理流體 喷淋至處理容室420的空穴5〇6内以及至載運器總成々μ 中的工件的曝露部份上。 在較佳實施例中，歧管52〇的每—個具有在處理容 室420的第一端部498以及第二端部5〇〇二者處的入口 通口 52卜及大致沿著處理容室42〇的整個長度延伸的喷 嘴522。此提供於歧管52〇的相反方向的雙重處理流體入 口。藉著在歧管520中具有雙重處理流體入口，橫越歧 管520的壓力降減小，並且可被引入處理容室42〇内的 流體的流量或體積增加。 參考圊20，門總成508相鄰於容室本體496的第一 端部498延伸，以提供對處理容室42〇的空穴5〇6的通 達。門總成508較佳地與處理容室42〇的第—端部 一起形成密封。如圖20所示，門總成5〇8大致包含支撐 板526’前面板528’門53〇,及一對線性軌道或導件532 。在較佳實施例中’線性執道532包含線性致動器。支 撐板526連接於容室本體496以將門總成5〇8固定於處 理容室420。前面板528在支撐板526下方延伸且對線性 致動器532的下方端部提供支撐。線性致動器532支撐 27 201230144 門530 ’且被設置來使門530可從門530密封地關閉通至 容室本體496的空穴5〇6的開口 5〇4的第一位置移動至 空穴506可被通達的第二位置（如圖2〇所示）。門 也可具有用來容許對處理容室420内目視檢查的窗口 534 如圖13中最佳顯示的，處理容室42〇以傾斜角度被 固定在機3 410的機箱414内。在較佳實施例中，處理 容室420具有在容室本體496的側邊上的安裝構件536 。安裝構件536與機器41〇的接收件（未顯示）配合以 支撐處理容室420。在此實施例中，安裝構件536操作成 :公型配合構件，而接收件操作成為母型配合構件。但 是’可瞭解在不離開本發明的範圍下可有其他類型的安 裝’包括在容室本體496上的安裝構#別可為母型， 而機器4 1 0的接收件可為公型。 雖然處理容室42G可被水平定向，但是較佳的是」 傾斜角度定向。另外，在較佳實施例中，容室本體V 的第一端部498以例如5至3〇度的角度向上傾斜，且上 大約1〇度最佳，使得處理容室例的第—端部498處方 =理:室的第，高的高度。為達侧 疋向，在較佳霄施例中，機肖4M的接收 具有適當的傾斜角度。處理容室4 又置成肩 至420的谷室本體496如 上所述經由安裝構# 536而連接於接收件。可睁解半導 體工件會因而被定位成為具有與處理容室切Referring to Figures 3A and 3 R S5 - 4* TT, the collet 10 is shown having a retaining member 14, a support body 12, and an engagement mechanism similar to that shown in Figure 2aub and described above. However, the retaining member 14 has only a single-annular recess 18 that can receive the sealing member 16. In this embodiment, the annular groove 18 is V-shaped and receives a square compressible seal. Preferably, the square sealing member 16 has a semi-circular extension projecting from each corner to Ensure proper assembly in the recess 18. 4A and 4B and Figs. 5 and 56 show a collet 48 that is circumferentially attached to the outer periphery of the bottom of the wagon body 12. The engagement ring 48 extends radially outward from the support body 12 to create a stepped relationship between the support body 12 and the engagement ring 48 and to form the engagement member 2''. The catching member 14 has a lower portion 42 formed with a μ recess 22. The U-shaped recess 22 receives the engaging member 2A. The lower portion 42 of the retaining member 51 has an extended portion 49 that wraps the engaging member 2 to form a mechanical snap-fit connection between the engaging members 14 and the engaging ring _ 48 of the body 12. In FIGS. 4A and 4B, the retaining member 14 has two stepped rings: a groove 18 that receives the sealing member 16, and the sealing member (4) has a first width for inserting the first step of the annular groove 18. The inner top portion has a second width for insertion into a portion of the second step of the annular groove 18. In Figs. 5A and SB, the retaining member 14 has a single crotch-like recess 18 for receiving the sealing member 16 which is a compressible beak ring in this embodiment. 15 201230144 Figures 6A and 6B show another preferred embodiment of the chuck ι according to the present invention. In this embodiment, the lower portion 42 of the holding member 14 has a inner casing 6'' having a convex makeup member extending outward therefrom, and a nail projection embossing portion 62. The support body has an end wall 64 having a concave recess "for receiving the convex portion 62 of the lower portion 42 of the holding member 14, J nw. In this way, the holding member 14 is engaged and supported. - σ stencils the body 12 and secures the workpiece 50 to the support surface 28 of the collet 10. In an embodiment having only a single sealing member 16 (as disclosed in Figures 3A and 3A to Figure 6 and printed), the seal The member 16 creates a flex boundary between the workpiece and the support body 12 to prevent the process fluid from interacting with the device side 5 1 and the bevel portion 52 of the workpiece 50, and releasing during the assembly/removal process. The stress applied to the workpiece. Turning now to Figs. 7A and 7B, it is preferred that the gg-force of the gg-force is not combined with the holder 14 of the prior embodiment and the collet of the sealing member 16. Embodiments In this embodiment, the retaining member 丨 4 is a single flat jaw compressible annular ring having an annular groove 18 extending circumferentially through the middle of the retaining member row 14. The support body 12 has an outer end portion 13, v, inserted into the annular groove 18 of the fastening member 14. The buckle member 14 is The field is held by the support member 12 and the workpiece 50 by the gripping member 14 to maintain the engagement force on the support body 12. In the attachment position, the outer periphery of the workpiece 50 is far away from the knee injury (for example, exclusion) The region) is also located within the annular recess 18. In this preferred embodiment, the backing 53 of the workpiece 14 of the holding member 14 together produces 'in the seal' thereby preventing the treatment fluid from being The bevel 52 and the device side of the workpiece 5〇 during processing are discussed below. 16 201230144 materials suitable for use in embodiments of the collet 1 according to the present invention are discussed. In general, the collet 10 can be stabilized and highly chemical. Made of several different polymeric materials that are resistant. Preferably, the building body 12 comprises polytetrafluoroethylene, and the fastening member 14 preferably comprises a fluoropolymer, such as by AtoHna Chemicals. Commercial name KYNAR sold polyvinylidene fluoride. In the embodiment shown in Figures 7A and 7B, the 'fastener 14 preferably has a hardness less than that of the fluoropolymer but greater than the following relating to the sealing member. discuss The Durometer hardness material of the hardness of the elastomeric material is formed. That is, it can be compressed enough to form a seal with the workpiece 50 but strong enough to provide the support member 14 for receiving the support body. The material of the structure of 12. In any embodiment of the present invention, in order to improve the adhesion of the holding member 14 to the supporting body i 2 , the supporting body 1 2 is preferably provided by having a ratio of the holding member J 4 . The hardness of the material is composed of a material having a hardness of a durometer hardness. As shown in FIGS. 1A to IE ' 2A and 2B, 5A and 5B, and 6A and 6B, the sealing member 16'24 is preferably formed like an r-shaped ring (〇_Hng )" but other shapes can also be used ( 3a and 3B and Figures 4A and 4B). Sealing member! 6, 24 is preferably formed of a compressible material having a durometer hardness equal to or greater than 50. Specific examples of suitable elastomeric materials include perfluoroelastomers sold by DuPont under the trade name Kalrez, and perfluoroelastomers sold by Greene, Tweed & Co. under the trade name chemraz. , a chaotic elastomer sold by DuPont under the trade name Viton (fiu〇r〇eiast〇rner), and a hydrocarbon (hydr〇carb〇n) elastomer sold under the trade name EPDM. 17 201230144 方法The method for thinning a single-conductor workpiece is now turned to the method of thinning the workpiece according to the present invention, and the figure cannot be used to thin the workpiece 5 at the above-mentioned chuck 1 and workpiece 5 An embodiment of the method performed on the back side 53. In step 200 4, a workpiece 5 having a side 5 and a back side 53 is provided. The lunar side 53 of the workpiece will have a given surface area depending on its size. Also, the workpiece 50 has a given thickness. At step 210, the workpiece 5 is placed on the support surface 28 of the head 1G directly below the support body 12 of the shower head 51. The fastener 14 is attached to the support body 12 to become the workpiece. The peripheral portion of the back side 53 (e.g., the exclusion area of the workpiece 5 ()) is covered. In step 210, the workpiece 50 is secured to the collet 10. Since the configuration of the collet 1Q 'attaches the clasp 14 to the support body 12 _, the majority of the surface area of the back side 53 in step 220 (and preferably at least 95%, more preferably At least 97%, and in particular at least 99%) are exposed, while a small peripheral portion of the back side μ of the workpiece 50 is covered. The workpiece 50 is then thinned to the desired thickness at step 23 by applying the treatment fluid to the exposed back side 53 of the workpiece 50. Due to the overlapping configuration of the fasteners 14, by the thinning of the exposed back side of the workpiece, at step 240, the 'periphery' and the body are formed on the workpiece 5'. The circumference is formed at the outer periphery of the workpiece 50 and has a thickness, and the body of the workpiece 5 has a thickness MBT. In the preferred embodiment of Figure 8, the MBT is less than about 50°/ of the lamp. . The desired MBT is preferably less than about RT, and 18 201230144 is preferably less than about 30% of RT, especially less than about 2% of RT, and even less than about 1% of RT. It should be understood that after thinning the workpiece 5 RT, the RT should be approximately the same as the thickness of the workpiece 5 之前 before the thinning treatment. Thus, for conventional 200mm and 300mm workpieces, the thinned RT is approximately 725 microns. Also, the conventional 15 mm workpiece has an RT of about 650 microns after thinning. However, it is within the scope of the invention to process workpieces 50 that have previously been thinned by some other method, such as mechanical grinding. Thus, a workpiece 5 having any thickness from 150 to 725 microns can be thinned according to the present invention to produce a workpiece 50 having a perimeter of thickness RT and a body of thickness MBT, wherein RT is substantially the same as workpiece 5 The range of thickness (i.e., about 150 to 725 microns, even about 6 to 725 microns, or even about 300 to 725 microns), and the MBT is in the range of about 25 to 300 microns, preferably It is in the range of about 1 〇〇 to 125 μm, more preferably in the range of about 5 〇 ij 〇〇 μm, especially in the range of about 25 to 50 μm. Turning now to Figure 9, there is shown another embodiment of a method that can be implemented when the above-described collet 1 is used to thin the workpiece 5〇. At step 300, a workpiece 5 having a thickness WPT is provided. The workpiece 5 has a device side 51 bevel 52 and a back side 53. The workpiece 50 is placed on the central member 10 at step 310 directly below the support body I of the collet 1〇 on the device side 51. At step 32, the holding member 14 is attached to the support body 12 such that the peripheral portion of the back side 53 of the workpiece 50 is covered. In this step, the ~r /J_ . ' member 50 is fixed to the collet 10. Due to the configuration 19 of the collet 10, 201230144, when the clasp 14 is attached to the support body 2, the back side 5 3 of the workpiece 50 is substantially exposed except for the covered exclusion area. Still referring to Figure 9' at step 330, the collet 1 and the workpiece 5 are placed in a processing chamber. The processing chamber can be manual or automated, and is preferably in a spray acid t〇〇i platform, as can be obtained from KaHspeU, Montana, Inc. · Take advantage of it. Once inside the processing chamber, the processing fluid is applied to the exposed back side 53 of the workpiece 50 at step 34. The thinning treatment of step 34 is preferably carried out by a conventional wet chemical etching treatment or polishing treatment. In any of the treatments, the treatment fluid is preferably comprised of one or a combination of deionized water, hydrogen peroxide, ozone, potassium hydroxide, sodium hydroxide, hydrofluoric acid, nitric acid, sulfuric acid, citric acid and phosphoric acid. A variety of other acidic and basic solutions can also be used depending on the particular surface to be treated and the material to be removed. The process "IL body can be applied to the workpiece 5 in any conventional manner. However, in the preferred embodiment the processing fluid is sprayed onto the back side 53 of the workpiece 50 via a nozzle or nozzles. In another preferred embodiment, the collet and workpiece 50 are immersed in a volume of treatment fluid, or sequentially immersed in a plurality of volumes of the same treatment fluid (at different concentrations or temperatures) or a plurality of different treatment fluid volumes. Depending on the composition of the material to be plucked and the amount of material to be plucked & the desired final workpiece thickness, the 4 fluid will have the desired amount of service. And the flow. By monitoring and maintaining these process fluid variables, the process fluid can be applied to the back side 53 of the exposure 20 201230144 of the workpiece 5 with a first meal rate, and then applied at a second etch rate. Preferably, the first residual rate is greater than the second (four) rate. That is, the semiconductor material is first quickly etched away and then slowly surnamed as the thickness of the workpiece 50 approaches the desired thickness. Referring to step 350' of Fig. 9, the peripheral portion 70 and the body 72 are formed by thinning on the workpiece 5. The thinning process is performed until the body 72 reaches the desired thickness MBT. Preferably, the MBT is less than 5% of the gift, more preferably less than 40% of the wpt, even more preferably less than 3% of the gift, especially less than 2% of the WPT, and particularly preferably less than the gift. It is preferable to measure the thickness of the body Μ of the semiconductor workpiece 5 整个 during the entire thinning process. This can be achieved by using conventional infrared monitoring techniques in the processing chamber _ or by any other known measurement technique such as capacitance measurement techniques. If desired, the process fluid variables described above can be adjusted based on continuous monitoring of the thickness of the workpiece. At step 3 6 , the τ I < Λ, wood, 丄丄 / 専化 workpiece 50 of the lotus # is washed and dried. For example, the workpiece can be sprayed with a stream of deionized water, a stream of nitrogen, or 'and can then withstand any one or more of the known drying techniques during the rinsing step. Finally, the workpiece 50 is removed from the chuck (step 37A), and the thinned workpiece 50 is diced into a plurality of dies (step 3). C_ used to thin the semiconductor workpiece $ batch processing chamber and system according to the thinning of the semiconductor workpiece 5 可 can be performed on a single-workpiece or simultaneously on multiple T # c Λ 1 > . When thinning a plurality of workpieces, $ 〇 'I want to place each of the workpieces 50 into the corresponding chuck 1 ,, then 21 201230144 put the plurality of chucks 10 and 50 into the vessel - the processor review In the United States, I Li Shen, Hong Chu, j, as disclosed in the patent application Shen Qing case No. 10/200, 074 0M75, is loaded and pulled, and the workpiece 50 (and associated chuck 1) is placed. The carrier, carrying the ancient squadron, was smashed into the processing container, and the fluid was applied to multiple workers from the ng+ &#1 夕1U workpiece 5〇 exposed side of the back side 53. In order to ensure that the body is properly applied to the workpiece 5, the preferred 卢 卢 疋 疋 旋转 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋The processing vessel can be a stand-alone implement' or one of a plurality of workstations that make up a larger workpiece handling system. Referring now to Figures 12, 13, and 27, the machine or implement 41 for processing the workpiece 412 is shown. The implement 41 preferably includes a housing 414 that houses the first processing module 416 and the second processing module 418, although it is understood that additional slots or modules in operation may also be provided in the implement 410. The first processing module 416 is typically a processing chamber for thinning the semiconductor workpiece 412, such as the processing chamber 42A shown in FIG. 4, and the second processing module, and 4 1 8 is typically at the workpiece 4丨. 2 The drying and rinsing chamber 422 of the workpiece 412 is dried and rinsed after being thinned. The implement 41 also has an electronic control area 425 associated with devices such as control panel 424, display 426, and a processor for controlling and monitoring the operation of the system. Further, the implement 4 1 0 has another module 427 for housing the tank in progress. Other features and components of the system are detailed below. As explained above, in this system, a plurality of workpieces 412 are thinned in the processing chamber 420. In the preferred embodiment, each workpiece 412 is mounted to a respective collet 430 for processing prior to being placed into process 22 201230144 chamber 420. The configuration between the workpiece and the various collet configurations has been described in detail above with respect to Figures 1-7. Then, a plurality of installed workpieces are placed in the carrier assembly 452 for holding the plurality of workpieces 4丨2. Referring to Figures 15 and 16, the carrier assembly 452 substantially holds the workpiece 412 about the peripheral portion of the workpiece. In this embodiment, the carrier assembly 452 includes a first carrier member 454 and a second carrier member 456 that are interconnected to form the entire carrier assembly 452. Approximately 25 workpieces 4 12 can be retained within the carrier assembly 452. Each of the carrier members 454, 456 has a plurality of support legs 458 to provide rigidity to the carrier assembly 452. In the preferred embodiment, as shown in Figure 15, each of the carrier members 454, 456 has four support legs 458 that extend in a controlled and substantially equidistant spacing. The spacing between the support legs 45 8 allows the process fluid to reach the workpiece 412 in the process chamber 々μ. Additionally, the support legs 458 have a plurality of through openings 460' to reduce the weight of the carrier members 454, 456. The first and second engagement members 457, 459 extend from the carrier assembly 452 when the <g first and first carrier members 454, 456 are joined as shown in FIG. Engagement members 457, 459 cooperate with rotor assembly 474 (described below) to positionally retain carrier assembly 452 within rotor assembly 474. Carrier assembly 452 has a central bore region 462. At the periphery of the central bore region 462, the carrier assembly has a plurality of locating members 464 that position and hold the semiconductor workpiece 412 within the carrier assembly 452. The positioning member 464 extends generally radially inward from the support leg 458. As such, the positioning member 464 provides a gap between adjacent workpieces 412 23 201230144 in the carrier assembly 452 to allow the processing fluid to interact with the entire back side of the workpiece 412. The positioning member biased as best shown in Fig. 6 helps to hold the workpiece 412 mounted to the collet 430 as described above on the edge in the carrier assembly 452. However, the geometric shape of the positioning member 464 generally allows the workpiece 412 to be slightly free to move in both the axial and rotational directions when positioned in the carrier assembly 452. As such, the workpiece 412 can rotate slightly independently within the carrier assembly 452. The carrier assembly 452 is typically made of Teflon or stainless steel. In a preferred embodiment the carrier assembly is made of polytetrafluoroethylene. Another carrier assembly 466 is shown in Figure 17. In this embodiment, the carrier assembly 466 has a first end plate 468, a second end plate 470, and a plurality of connecting members 472 extending between the first end plate 468 and the second end plate 47A. At least one of the joint members 472 has a foot member 464 depending therefrom depending therefrom and extending radially inwardly to position and hold the workpiece 4 1 2 within the carrier assembly 466. As in the carrier assembly 452 described above, the positioning member 464 of the carrier assembly 466 facilitates the securing of the workpiece 412 secured to the lost head 430 in the carrier assembly 466. Additionally, as in the carrier assembly described above, the positioning member 464 allows the workpiece 41 2 to be slightly free to move in both the sleeve and direction of rotation when positioned in the carrier assembly 466. The carrier assemblies 452, 466 can be used to process workpieces 412 having a variety of different sizes, but are typically formed to process workpieces 412 of a certain size, such as semiconductor wafers of 2 mm or 300 mm diameter, in appropriate The carrier assembly (for purposes of example, this disclosure will use the carrier assembly 452 in further discussion at this 2012 20120144), after carrying the workpiece 412, is assembled to the cavity contained in the processing chamber 420. The rotor assembly 6 of 6. An example of a rotor assembly 474 is shown in Figures 18 and 19 and an example of a rotor assembly 474 carrying a carrier assembly 452 is shown in Figure 14. The rotor assembly 474 generally includes a generally cylindrical rotor 476' generally circular base plate 478' and a drive shaft 480. The rotor 476 has an outer 482, a base 484, and a plurality of connecting members 486 extending between the base 484 and the outer ring 482. The void 488 is defined within the interior of the base 484, between the connecting member 486 and the outer ring 482. The shape of the cavity 488 becomes an acceptable carrier assembly 452. The drive shaft 480 is coupled to the drive plate 49A and rotates with the drive shaft 480. A plurality of auxiliary drive rods 492 are in turn coupled to the drive plate 490. Drive rod 492 extends through connecting member 486 to assist in driving rotor assembly 474. Typically, rotor 476 is made of polytetradecene, but other materials are also acceptable. In addition, in order to maintain sufficient rigidity, but to reduce weight, the auxiliary drive rod 492 is made of carb〇n graphite, the drive shaft 480 and the drive plate 490 is typically made of stainless steel or some other suitable material. . Seal 494 is used to ensure that process fluid does not enter the internal components of rotor assembly 474. Referring to Figures 14 and 22, the carrier assembly 452 is loaded into the rotor assembly 474 in the cavity 506 of the process chamber 42A. The processing chamber 42A includes a 4-chamber body 496 having a first end 498, a second end 5〇〇, an outer bore 5〇2, and a lead-through treatment at the first end 498 of the chamber body 490. The opening 5 〇 4 in the cavity 506 of the present 420. The shape of the cavity 5〇6 is the rotor 25 201230144 assembly 474 in which each of the carrier assemblies M2 carrying the plurality of workpieces 412 is filled. The chamber body 496 can have a split ring assembly 497 that is coupled to the first end 498 of the chamber body a%. In the preferred embodiment, the chamber body 496 is formed from a thick (e.g., about 25 mm thick) polytetrafluoroethylene. This material is inert to the various component and corrosive etchants used in the etching/thinning process. However, it is understood that other materials that provide well-like tm quality can also be used. Alternatively, the processing chamber 42A has a lining 507 made of such a material. The processing chamber 420 also has various different assemblies coupled thereto including a door assembly 508 and a motor assembly 512. As shown in Figures 14 and 21, motor assembly 512 generally includes motor 514 and mounting plate 516. The motor 514 is coupled to the women's panel 5 1 6 ' and the mounting panel 5 16 is in turn coupled to the second end 500 of the chamber body 496 of the process chamber 42A. In the preferred embodiment, motor 512 is a brushless D.C_ (direct current) servo motor. As shown in Figure 23, the drive shaft 48 of the rotor assembly 474 extends to the exterior of the process chamber 42A and through the opening 518 of the second end 500 of the chamber body 496. The drive shaft 48 is inserted into the motor 5 14 to allow the motor 514 to drive the drive shaft 48 (i.e., to provide rotational motion to the drive shaft 480). Thus, via the drive shaft 480 of the rotor assembly 474, the motor 514 can rotate the carrier assembly 452 and the workpiece 412 therein. The chambers 420 also include a spray assembly that sprays process fluid into the process chamber 5 1 0 . In the preferred embodiment, the spray assembly 5 1 成 is integral with the processing valley 420. In the preferred embodiment illustrated in Figures 14 and 20-24, the spray assembly 51A has a pair of dual overlapping spray manifolds 52' to provide a more uniform transfer of process fluid. A plurality of nozzles 522 within each of the manifolds 520, 520, and a plurality of openings 525, and process fluid is sprayed from the nozzles 522 through the openings 525 into the process chamber. Manifold 520 receives the process fluid from transfer trough (4) at inlet port 521 and distributes the process fluid along manifolds 52 to the plurality of nozzles 522, as shown in FIG. Nozzle holder 524 ^nozzle 522. The nozzle 522 sprays process fluid into the cavity 5〇6 of the process chamber 420 and onto the exposed portion of the workpiece in the carrier assembly 々μ as the workpiece is rotated by the rotor assembly 474. In the preferred embodiment, each of the manifolds 52A has an inlet port 52 at both the first end 498 and the second end 5 of the process chamber 420. A nozzle 522 extends over the entire length of the chamber 42. This provides a dual treatment fluid inlet in the opposite direction of manifold 52〇. By having a dual treatment fluid inlet in the manifold 520, the pressure drop across the manifold 520 is reduced and the flow or volume of fluid that can be introduced into the processing chamber 42 is increased. Referring to 圊20, door assembly 508 extends adjacent first end 498 of chamber body 496 to provide access to voids 5〇6 of processing chamber 42〇. Door assembly 508 preferably forms a seal with the first end of processing chamber 42A. As shown in Fig. 20, the door assembly 5〇8 generally includes a support plate 526' front panel 528' door 53〇, and a pair of linear rails or guides 532. In the preferred embodiment, the linear actuator 532 includes a linear actuator. A support plate 526 is coupled to the chamber body 496 to secure the door assembly 5〇8 to the treatment chamber 420. The front panel 528 extends below the support plate 526 and provides support for the lower end of the linear actuator 532. The linear actuator 532 supports 27 201230144 the door 530' and is configured to allow the door 530 to sealingly close the first position of the opening 5〇4 leading to the cavity 5〇6 of the chamber body 496 from the door 530 to the cavity 506 can be accessed in a second position (as shown in Figure 2A). The door may also have a window 534 for permitting visual inspection of the processing chamber 420. As best shown in FIG. 13, the processing chamber 42 is secured within the housing 414 of the machine 3410 at an oblique angle. In the preferred embodiment, the processing chamber 420 has mounting members 536 on the sides of the chamber body 496. Mounting member 536 cooperates with a receiving member (not shown) of machine 41A to support processing chamber 420. In this embodiment, the mounting member 536 operates as a male mating member and the receiving member operates as a female mating member. However, it is to be understood that other types of mountings may be included without departing from the scope of the invention. The mounting structure included on the chamber body 496 may be a female type, and the receiving member of the machine 410 may be a male type. Although the process chamber 42G can be oriented horizontally, it is preferably an "inclined angle orientation." Further, in the preferred embodiment, the first end portion 498 of the chamber body V is inclined upward at an angle of, for example, 5 to 3 degrees, and is preferably about 1 degree, so that the first end portion of the processing chamber example is 498 prescription = rational: the height of the room, the height. In order to achieve side orientation, in a preferred embodiment, the receiver 4M has an appropriate tilt angle. The chamber chamber 496, which is further disposed shoulders 420, is coupled to the receiver via mounting structure #536 as described above. It can be understood that the semiconductor workpiece will thus be positioned to have a cut with the processing chamber

的傾斜角度。 入双祁UThe angle of inclination. Into the double U

S 201230144 如圖21至23所示，處理交6 η。 1 如理合至420具有排氣通道54〇 及出口或排泄裝置542。排氣诵洁ς/)Λ “ 1 + 孔通道54〇排放來自處理容室 420的空穴506的氣體及蒗汽且 、、/lj兑將其排出通氣出口 5 4 1。 在較佳實施例中’排氣通道54〇 Μ+从——丄 υ延伸大約容室本體496 的1個長度。排泄裝置5 4 2在4γ f y ^ 你权1圭λ她例中包含類似地 延伸大約容室本體496的黎徊旦* ΛΑ j 町i個長度的排泄滑槽，以將用 過的處理流體及移除的碎向下排泄且排泄至處理容室 420的外部。如圖22所示，排氣通道540可位於與排泄 裝置542相反的容室本體部份。排泄裝置542具有連接 於再循環系統544的排泄出口 543,以排泄來自處理容室 420的容室本體496的空穴5〇6的過量及用過的處理流體 及矽。再循環系統544典型上將來自處理容室的過量及 用過的處理流體傳送至適當的傳送槽4S6。另外，處理流 體及移除的矽可被排泄至處理容室42〇的外部以被拋棄 而非被再循環。排氣通道540及排泄裝置542形成為在 一次通過（single pass)中將過量/用過的處理流體及煙 (fume )從處理容室移去。煙被向上排出至排氣通道54〇 的外部’而用過的處理流體及矽被向下排泄至排池茫置 5 42的外部。 在較佳實施例中，本發明的系統中所用的處理流體 包含水，過氧化氫’臭氧，氫氧化鉀，氫氧化鈉，.氫氟 酸，硝酸，硫酸，石夕酸，及填酸中的—種或多種。也可 用其他處理流體。處理流體可被混合及調整來應付系統 的特定需求。 29 201230144 某一體積的處理流體典型上被收容在傳送槽546中 以傳送至處理容室420。但是，額外的組件可被設置成為 整體系統的一部份來將流體從傳送槽546傳送至處理容 室420。流體傳送設計的一例顯示在圖26中。在此例子 中，泵548被用來將處理流體從傳送槽546泵唧至處理 容室420。過渡器55〇被設置在傳送槽⑷與處理容室 之間以過濾處理流體。另外，濃度監控器552可被設 置在傳送槽546與處理容室42〇之間來監控正被傳送: 處理容室420的處理流體的濃度。最後，流量言十554被 用來監控傳送至處理容室42〇的處理流體的體積。Μ 換器州也可被設置來與傳送槽546連接，以調節處理 流體的溫度。這些組件典型上被收容在整個機具41〇中 〇 系統也可包含容納各種不 、曲 — j蜒理极體的濃縮體積的 浪細计置谷器558。例如，如 囫26所不，三個計量 558被設置。在此例子中，— ° 一抑— 個叶置容器容納氫氟酸’另 4里谷态容納硝酸，而另— — θ °十里谷器容納碟酸。每一 计罝谷器558典型上具有且太 母 ^ ，、本身的計量泵560，以從舛晉 谷器558傳送特定的處理流體 ° 傳送槽5 4 6。取決於搞骨 疋由濃度監控器552決定的處 ' " 中的一個或多個可適當地調配 朿 傳延槽546申的虚理、，*和 池以保持所需的流體濃度 a 的処理抓體 ^ 410 ^ 计更谷器558可被收容在機 ” 内，或疋可在機具 被泵唧至機具410内。 …而流體經由計量粟560 30 201230144 如以下在處理工件的方法中所說明的，各種不同的 ’月潔及蝕刻步驟被提供。對於每一步驟，典型上設置有 分開的傳送槽5 4 6。W itl·，《η、主* b U此預清潔步驟6丨2所需的處理流 體可被收今在-傳送槽546中，粗敍刻步驟6 Μ所需的 處理流體可被收容在分開的傳送肖546巾，拋光触刻步 驟6 1 6所而的處理流體可被收容在另一分開的傳送槽 中而'中洗步'驟6 1 8戶斤需的處理流體可被收容在又一分 開的傳送t 546 t。因此，計量容器558可被用來分開 地傳送流體至適當的傳送槽546 (圖％中只顯示—個傳 送乜）另外，再循壤系統將來自處理容室的過量及用過 的處理流體根據目前的處理步驟傳送至適當的傳送槽 546。 D ·薄化一批半導體工件的方法 用來處理一批半導放 干¥體工件的—方法顯示在圖25中。 如圖所示’經常在處理工件時實施的第-步驟600是將 工件412在工件412的背側曝露之下置入夾頭430中。 第二步驟602包含將工株 ’件412 (已在夹頭430中）載入載 運器總成4 5 2内於載琿哭她士、 6 尺硬益、，心成的疋位構件之間。在載運 器總成452完全載有多個工件412(典型上為25至則固 工件）之後’載運态總成452於步驟6〇4被置入在處理 容室420的空穴506内 1的轉于總成4 7 4中。在工件4 12 被載入處理容室420中的鳇不她士 τ的轉千總成474内之後，門530 被移至第一位置以密封砧α, 山对地關閉容室本體496的通至空穴 31 201230144 506 的開口 504 (步驟 6〇8 )。 在工件412被置入空穴506内且處理容室42〇的門 530關閉之後’工件準備被處理。典型上，工件412是在 旋轉處理容室420的同時被處理。因此，於步驟6ι〇，馬 達514被充電以旋轉處理容室420内的轉子總成474。工 件4 1 2與轉子總成474申的載運器總成452 一起旋轉， 是件4 1 2如以上所說明的也略微獨立地旋轉及軸向 移動。其次，處理流體在工件被轉子總成474旋轉時經 由噴淋總的噴嘴522噴淋在載運器總成452中的 工件的曝露部份上。 在一 Λ施例中，實施第一預清潔噴淋步驟（步驟6 1 2 )。在此步驟612中，清潔流體喷淋通過噴淋總成51〇且 至處理容室420中的工件412的曝露部份上，以去除工 件412上的表面污染。清潔溶液被收容在第一傳送槽中 ’並且可包含η2ο (水），η2〇2，及ΝΗ4〇η.(氫氧化録 )的至乂之。其次，於步驟6 1 4實施第一粗化學|虫刻 。在第一化學蝕刻步驟中，使用增加的蝕刻率來從工件 412移除較大量的基板。在於工件4丨2上實施粗化學蝕刻 之後，於步驟616在工件412上實施拋光化學蝕刻。拋 光化學飯刻的蝕刻率小於粗化學蝕刻的蝕刻率。在較佳 實施例令，化學蝕刻工件412的步驟包含對工件412施 加HF，ΗΝ〇3，及H：jP〇4的溶液。兩個不同的傳送槽被 用來收容用於粗及拋光蝕刻處理的流體。經由此二步驟 ’成批的工件412在處理容室42〇令被薄化。工件4i2 32 201230144 可被薄化至小於100微米的厚度。其次，工# 4i2於步 驟6 1 8在處理容室中被沖先 合至T散β况冲洗工件4 12 —般而言包 含對處理容室42〇中的工侏41? & | u Λ 主〒的工件412施加的溶液。此S 201230144 As shown in Figures 21 to 23, the intersection is 6 η. 1 If the fit to 420 has an exhaust passage 54A and an outlet or drain 542. Exhaust 诵 ς Λ Λ Λ 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 The middle 'exhaust passage 54 〇Μ + 丄υ 丄υ extends about 1 length of the chamber body 496. The drain device 5 4 2 is in 4 γ fy ^ 496 Li Ridan* ΛΑ j ー i length of drain chute to drain the used treatment fluid and removed debris and drain to the outside of the processing chamber 420. As shown in Figure 22, exhaust The passage 540 can be located in a chamber body portion opposite the drain 542. The drain 542 has a drain outlet 543 connected to the recirculation system 544 to drain holes 5 〇 6 from the chamber body 496 of the process chamber 420. Excessive and used process fluid and helium. Recirculation system 544 typically delivers excess and used process fluid from the process chamber to an appropriate transfer tank 4S6. Additionally, the process fluid and removed helium can be drained to The exterior of the chamber 42 is treated to be discarded rather than recycled. The exhaust passage 54 0 and the draining device 542 are formed to remove excess/used process fluid and smoke from the processing chamber in a single pass. The smoke is discharged upward to the outside of the exhaust passage 54' The treated fluid and helium are drained down to the exterior of the drainage chamber 5 42. In a preferred embodiment, the treatment fluid used in the system of the present invention comprises water, hydrogen peroxide 'ozone, potassium hydroxide, hydrogen One or more of sodium oxide, hydrofluoric acid, nitric acid, sulfuric acid, rock acid, and acid. Other treatment fluids may be used. The treatment fluids may be mixed and adjusted to meet the specific needs of the system. The volume of processing fluid is typically contained in transfer trough 546 for transfer to processing chamber 420. However, additional components can be provided as part of the overall system to transfer fluid from transfer trough 546 to processing chamber 420. An example of a fluid transfer design is shown in Figure 26. In this example, pump 548 is used to pump process fluid from transfer tank 546 to process chamber 420. Transitioner 55 is disposed in transfer tank (4) and process chamber Between The treatment fluid is filtered. Additionally, a concentration monitor 552 can be disposed between the transfer tank 546 and the process chamber 42A to monitor the concentration of the process fluid being processed: the process chamber 420. Finally, the flow rate 554 is used The volume of process fluid delivered to the process chamber 42 is monitored. The exchanger state can also be configured to interface with the transfer tank 546 to regulate the temperature of the process fluid. These components are typically housed throughout the tool 41. It is also possible to include a concentrating volume granulator 558 that accommodates a variety of non-magnetic, tangential bodies. For example, as 囫26 does not, three meters 558 are provided. In this example, - ° - a leaf container containing hydrofluoric acid - the other 4 valleys contain nitric acid, while the other - θ ° ten valleys contain dish acid. Each meter granulator 558 typically has a metering pump 560, and a metering pump 560 of its own, for transporting a particular processing fluid from the sifter 558 to the transfer tank 546. Depending on the one or more of the '" determined by the concentration monitor 552, the processing of the enthalpy, the * and the pool can be properly configured to maintain the desired fluid concentration a. The gripping body 410 410 can be contained within the machine, or the machine can be pumped into the implement 410. ... and the fluid is metered by the mill 560 30 201230144 as described below in the method of processing the workpiece Various 'monthly cleaning and etching steps are provided. For each step, a separate transfer groove 5 4 6 is typically provided. W itl·, "η, main * b U this pre-cleaning step 6丨2 The required treatment fluid can be received in the transfer tank 546, and the processing fluid required for the step 6 can be accommodated in a separate transfer 546 towel, and the processing fluid in the polishing touch step 6 16 can be The treatment fluid that is contained in another separate transfer tank and is 'washed in the middle step' can be accommodated in a separate transfer t 546 t. Therefore, the metering container 558 can be used separately. Transfer fluid to the appropriate transfer slot 546 (only one transfer port is shown in Figure %) The re-routing system transfers excess and used process fluid from the process chamber to the appropriate transfer tank 546 according to current processing steps. D. Thinning a batch of semiconductor workpieces for processing a batch of semi-conductive drains The method of the body workpiece is shown in Figure 25. As shown, the first step 600, which is often performed while processing the workpiece, is to place the workpiece 412 into the collet 430 under the back side of the workpiece 412. Step 602 includes loading the worker's member 412 (which has been in the collet 430) between the carrier assembly 4 5 2 and the jaw member, the 6-foot hard, and the core member. After the carrier assembly 452 is fully loaded with a plurality of workpieces 412 (typically 25 to a solid workpiece), the carrier assembly 452 is placed in the cavity 506 of the processing chamber 420 at step 6〇4. In the assembly 474. After the workpiece 4 12 is loaded into the rotary 474 of the 鳇 她 τ in the processing chamber 420, the door 530 is moved to the first position to seal the anvil α, the mountain pair The opening 504 of the chamber body 496 leading to the cavity 31 201230144 506 is closed (step 6〇8). The cavity 506 is placed in the workpiece 412. The workpiece is ready to be processed after the door 530 of the processing chamber 42 is closed. Typically, the workpiece 412 is processed while rotating the processing chamber 420. Therefore, in step 6i, the motor 514 is charged to rotate the processing capacity. The rotor assembly 474 within the chamber 420. The workpiece 4 1 2 rotates with the carrier assembly 452 of the rotor assembly 474, which is also slightly independent of rotation and axial movement as explained above. The process fluid is sprayed onto the exposed portion of the workpiece in the carrier assembly 452 via the spray total nozzle 522 as the workpiece is rotated by the rotor assembly 474. In one embodiment, a first pre-cleaning spray step (step 6 1 2) is performed. In this step 612, the cleaning fluid is sprayed through the spray assembly 51 and onto the exposed portion of the workpiece 412 in the process chamber 420 to remove surface contamination on the workpiece 412. The cleaning solution is contained in the first transfer tank' and may contain η2ο (water), η2〇2, and ΝΗ4〇η. Next, the first crude chemical|insect is performed in step 614. In the first chemical etching step, an increased etch rate is used to remove a larger amount of substrate from the workpiece 412. After the rough chemical etching is performed on the workpiece 4A, a polishing chemical etch is performed on the workpiece 412 at step 616. The etch rate of the polishing chemistry is less than the etch rate of the coarse chemical etch. In a preferred embodiment, the step of chemically etching the workpiece 412 includes applying a solution of HF, ΗΝ〇3, and H:jP〇4 to the workpiece 412. Two different transfer channels are used to accommodate the fluid used for the rough and polishing etch process. The workpiece 412, which is batched by this two steps, is thinned in the processing chamber 42. The workpiece 4i2 32 201230144 can be thinned to a thickness of less than 100 microns. Next, the worker #4i2 is flushed to the T-spray condition in the processing chamber in step 168. In general, the workpiece 4 in the processing chamber 42 is included in the processing chamber 42? & | u Λ The solution applied by the main workpiece 412. this

溶液被收容在另—傳送# 546巾。在這些步鄉的每—個 的期間，用過的處理流體典型上經由再循環系统Μ4被 回收，並且從處理容室携被傳送至適當的傳送槽W 在件4 1 2已被溥化及沖洗之後，工件典型上於步 驟620從處理容室42〇被移去…般而言，工件M2維 持在載運器總丨452巾’並且載運器總成452從處理容 室420中的轉子總成474被移去。於步驟624，固持著工 件4 1 2的載運器總成452被置入第二處理模，且“ 8中以 進行乾燥及沖洗。在乾燥及沖洗容室422中乾燥及沖洗 工件412的步驟—般而言包含首先對工件川施加去離 子水來沖洗工件412，然後對工件施加異丙醇（is〇pr〇pyi alcohol )洛汽或熱氮氣來乾燥工件4丨2，此均是在旋轉工 牛4 1 2之下進行。這些流體的每一個可被收容在另一傳 送槽中， 在工件4 1 2已被清潔及乾燥之後，載運器總成452 於步驟626從第二處理容室422被移去。於步驟628，工 件4 12從載運益總成452被移去，並且最後於步驟〇 ’工件4 1 2從夾頭430被移去。 E ·薄化的半導體工件 33 201230144 理所：在參考圖1〇及11 ’以下敘述根據本發明的方法處 理所得的薄化的半導體工件50。 ：方法處 5 〇包含R # 斤述，溥化的工件 匕3周緣70及主體72。周緣7Ω # & + 邊虎曰& n，、象7〇形成在工件50的周 邊处且與主體72整體。— 工件50日* , 舨而&，在處理標準半導體 哙，處理後的工件50會呈；& μ 厚产的士 μ s，、有有小於微米的 又、主粗72，及有在大約6〇 厚唐的Η这 王/25咏未的範圍内的 坪度的周緣7〇。但是，在 合I认 佳R施例中’主體72的厚度 gy1 〇〇微米，較佳的是小於 25微米。如上戶"1络 且特別是小於 戈上所边’周緣7 〇形土 處，# θ ^ 形成在工件5〇的排除區域 、’曰具有在1 至 10mm f + Φ α '壯- 礼图μ的寬度（在圖1 ο 是 ^ 1至5mm的範圍内，且特別 至2mm的範圍内。主體72 前的工杜… ® 72及周緣70是由與薄化 】的工件50相同的材料形成。 70由秒構成。 72及周緣 也如上所述’先前已曾藉著另— 一 -fit CA , _ 方法而破溥化的工 也可根據本發明被薄化。在 發明被薄化的工件⑽、仏 清况中’要根據本 饥/寻化的工件5 0的初始厚唐匕 。产+ & 予度了此為200微米或更小 在此情況中，根據本發明薄化 曰丄 ；件5〇的主體72合 :二於周緣70的厚度的大約5〇%的厚度，較佳地為:、 於周、·彖70的厚度的大約4〇%， 頂 尺1地為小於周緣70的 又的30%，特佳地為小於周 θ , 豕/U的厚度的20%，甚至 疋小於周緣70的厚度的丨〇% , m 0 ^ co/ 符別疋小於周緣70的 又的5 /〇。本發明也可被用來 cn m 守化具有不同尺寸的工件 。因此，周緣70會較佳地包含 3 J表工件50的背側53 34 201230144 的表面面積（BSSA)的大約5%的表面面積，更佳地為小 於BSSA的3%，且甚至小於BSSA的1%。 ’、 在不離開本發明的基礎教示下可對上述的本發明進行 眾多的修改。雖然已參考—或多個特定實施料細地敎 述本發明，但是熟習此項技術者會認知到在不離開本發 明的範圍及精神下可對上述實施例進行改變。 【圖式簡單說明】 圖1 A為根據本發明的夾頭的立體圖，其中固定有薄 化之前的半導體工件。 圖1 B為圖1 A所示的夾頭及工件的剖面圖。The solution was contained in another-transfer #546 towel. During each of these steps, the used process fluid is typically recovered via the recirculation system Μ4 and carried from the process chamber to the appropriate transfer tank W where it has been deuterated and After rinsing, the workpiece is typically removed from the process chamber 42 at step 620. In general, the workpiece M2 is maintained at the carrier 452, and the carrier assembly 452 is from the rotor assembly in the process chamber 420. 474 was removed. At step 624, the carrier assembly 452 holding the workpiece 4 1 2 is placed into the second processing die, and "8 is used for drying and rinsing. The steps of drying and rinsing the workpiece 412 in the drying and rinsing chamber 422 - Generally speaking, firstly, deionized water is applied to the workpiece to rinse the workpiece 412, and then the workpiece is subjected to isopropanol (is〇pr〇pyi alcohol) or hot nitrogen to dry the workpiece 4丨2, which is in the rotary machine. The cattle 4 1 2 are performed. Each of these fluids can be housed in another transfer tank. After the workpiece 42 has been cleaned and dried, the carrier assembly 452 is from step 626 from the second processing chamber 422. The workpiece 4 12 is removed from the carrier assembly 452 at step 628, and finally the workpiece 4 1 2 is removed from the chuck 430 in step 。 E. Thinned semiconductor workpiece 33 201230144 The resulting thinned semiconductor workpiece 50 is processed in accordance with the method of the present invention with reference to Figures 1A and 11'.: Method 5 includes R # 述, 溥化的匕3 periphery 70 and body 72. Peripheral 7Ω # & + 边虎曰& n,, like 7〇 formed in the work The periphery of 50 is integral with the main body 72. - The workpiece is 50 days*, 舨和&,; in the processing of the standard semiconductor 哙, the processed workpiece 50 will appear; & μ thickly produced taxi μ s, there are less than micron The width of the main body 72 in the range of about 〇 R 72 , , , 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 Gy1 〇〇 micron, preferably less than 25 micrometers. The above-mentioned household "1 network and especially less than the top of the side of the 'south 7 〇-shaped soil, # θ ^ formed in the exclusion zone of the workpiece 5〇, '曰 has In 1 to 10mm f + Φ α 'strong - the width of the ritual μ (in the range of 1 to 5mm in Figure 1 and especially in the range of 2mm. The front of the main body 72... ® 72 and the peripheral 70 It is formed of the same material as the thinned workpiece 50. 70 is composed of seconds. 72 and the periphery are also as described above. 'The work that has been previously broken by another-fit CA, _ method can also be based on The present invention is thinned. In the invention of the thinned workpiece (10), the initial thickness of the workpiece 50 according to the hunger/seeking is determined. + & to this is 200 microns or less. In this case, according to the present invention, the body 72 of the member 5 is combined: a thickness of about 5% of the thickness of the peripheral edge 70, preferably The ground is: about 4,000% of the thickness of the 、70, the top rule 1 is less than 30% of the circumference 70, and particularly preferably less than the circumference θ, 20% of the thickness of the 豕/U, even疋 is less than 丨〇% of the thickness of the peripheral edge 70, and m 0 ^ co/ is not less than 5 〇 of the peripheral edge 70. The invention can also be used to cn m to protect workpieces of different sizes. Thus, the peripheral edge 70 will preferably comprise a surface area of about 5% of the surface area (BSSA) of the back side 53 34 201230144 of the 3 J-table workpiece 50, more preferably less than 3% of the BSSA, and even less than 1 of the BSSA. %. The invention as described above is susceptible to numerous modifications without departing from the basic teachings of the invention. While the invention has been described in detail with reference to the specific embodiments of the invention, it will be understood that BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a perspective view of a collet according to the present invention in which a semiconductor workpiece before thinning is fixed. Figure 1B is a cross-sectional view of the collet and workpiece shown in Figure 1A.

圖1C為圖1B所示的夾頭及工件的部份放大視圖 示夾頭與工件之間的合作。 圖1D為圖1A所示的夾頭及工件的分解剖面圖。 圖1E為在圖1D中以X標示的灰頭及工件部份的部份 放大視圖。 圖2 A為根據本發明的夾頭的另— 乃J人峨J力貫施例的剖面圖 其中固定有薄化之前的工件。Figure 1C is a partial enlarged view of the collet and workpiece shown in Figure 1B showing the cooperation between the collet and the workpiece. Figure 1D is an exploded cross-sectional view of the collet and workpiece shown in Figure 1A. Figure 1E is a partial enlarged view of the gray head and the workpiece portion indicated by X in Figure 1D. Fig. 2A is a cross-sectional view showing another embodiment of the collet according to the present invention in which the workpiece before thinning is fixed.

圖2B為圖2A所示的炎頭及工件的部份放大視圖， 示夹頭與工件之間的合作。 圖 其中 3A為根據本發明的夾頭的另— A轭例的剖面圖 固定有薄化之前的工件。 圖3B為圖3A所示的炎頭及 示爽頭與工件之間的合作。 工件的部份放大視圖Figure 2B is a partial enlarged view of the inflamed head and workpiece shown in Figure 2A showing the cooperation between the collet and the workpiece. 3A is a cross-sectional view of another yoke example of the collet according to the present invention, and the workpiece before thinning is fixed. Fig. 3B is a view showing the cooperation between the head and the head shown in Fig. 3A and the workpiece. Partial enlarged view of the workpiece

35 201230144 圖4A為根據本發明的夾頭的另— 其中固定有薄化之前的工件。 汽施例的剖面圖， 圖4B為圖4A所示μ頭及卫 示夾頭與工件之間的合作。 。份放大視圖，_ 貫施例的剖面圖 的部份放大視圖，35 201230144 Figure 4A shows another embodiment of the collet according to the present invention in which the workpiece before thinning is fixed. A cross-sectional view of the steam embodiment, and Fig. 4B is a cooperation between the μ head shown in Fig. 4A and the guard collet and the workpiece. . a magnified view of the enlarged view, a partial enlarged view of the cross-sectional view of the embodiment,

圖5 Α為根據本發明的夾頭的另 其中固定有薄化之前的工件。 圖5B為圖5A所示的夾頭及工件 示夾頭與工件之間的合作。 圖6A為根據本發明的夾頭的另—输p i φ田卞古·^ 汽她例的剖面圖， 其中固疋有溥化之前的工件。 部份放大視圖， 施例的剖面圖，Fig. 5 is a view showing the workpiece before the thinning of the chuck according to the present invention. Figure 5B is a view of the collet between the collet and the workpiece collet shown in Figure 5A and the workpiece. Fig. 6A is a cross-sectional view showing another example of the chuck of the present invention, in which the workpiece is before the crucible. Partially enlarged view, sectional view of the example,

其 圖6B為圖6A所示的夾頭及工件的 示夾頭與工件之間的合作。 圊7A為根據本發明的夾頭的—實 中固定有薄化之前的工件。 圖7B為圖7A所示的夾頭及工 1干的部份放大視圖， 示炎頭與工件之間的合作。 圖8及9為顯示根據本發明的 戍机私方面的流程圖。 圖10為根據本發明的方、本姑@ μ 月的方法被溽化的半導體工件的立 體圖。 圖11為圖1〇戶斤示的薄化的半導體卫件的剖面圖。 圖12為用來處理半導體工件的機具的立體圖。 圖13為圖12的機具的立體圖’其中面板被移去以揭 露機具中的傾斜工作站。 圖14為圖12的機具的工作站所用的處理容室的一實 36 201230144 施例的分解立體圖。 圖15為與處理容室一起使用的载運器總成的—實施 例的立體圖。 圖1 6為依圖1 5的線A_A所取的載運器總成的剖面側 視圖。 圖17為與圖14的處理容室一起使用的載運器總成的 另一實施例的立體圖。 圖1 8為工件處理系統中所用的轉子總成的前立體圖。 圖1 9為圖]8的轉子總成的後分解立體圖。 圖20為圖14的處理容室的前立體圖。 圖21為圖14的處理容室的後立體圖。 圖22為圊21的處理容室的後剖面圖。 圖23為圖2 1的處理容室的通過通氣及排泄總成的剖 面側視圖。 圖24為圖21的處理容室的通過噴淋總成的剖面側視 圖。 圖25為顯示用來在處理容室中薄化工件的單程方法 的流程圖。 圖26為顯示單程流體傳送設計的流線圖。 圖2 7為結合圖1 4的處理容室的機具的示意圖。 【主要元件符號說明】 1 0 :夾頭 12 :支撐本體 37 201230144 1 3 :外端部 1 4 :扣持件 1 6 :密封構件 1 8 :凹槽或凹部 20 :接合構件 22 :凹部 24 :密封構件 26 :唇部或階梯 28 :支撐表面 3 0 :外周邊端部 3 2 :傾斜表面 3 4 :傾斜表面 36 :缺口 3 8 :凹槽 40 :沖洗孔 42 :下方部份 44 :環狀凹部 46 :下方部份 48 :接合環圈 49 :延伸部份 5 0 :半導體工件 5 1 :裝置側 52 :斜削部（周邊邊緣） 53 :背側 38 201230144 凸出部 凹部 60 :内側壁 62 :凸出狀 64 :端壁 6 6 :凹入狀 70周緣 72 :主體 2 0 0 :步驟 2 1 0 :步驟 220 :步驟 23 0 ：步驟 2 4 0 :步驟 3 0 0 :步驟 3 1 0 :步驟 3 2 0 :步驟 3 3 0 :步驟 3 40 :步驟 3 5 0 :步驟 360 :步驟 . 3 7 0 :步驟 3 8 0 :步驟 或機具 處理模組 4 1 0 :機器 4 1 2 :工件 4 1 4 :機箱 416 :第一 201230144 4 1 8 :第二處理模組 420 :處理容室 422 :乾燥及沖洗容室 424 :控制面板 425 :電子控制區域 426 :顯示器 427 :模組 430 :夾頭 452 :載運器總成 454 :第一載運器構件 456 :第二載運器構件 457 :第一接合構件 458 :支撐腿 459 :第二接合構件 460 :開孔 4 62 :中心鑽孔區域 4 64 :定位構件 466 :載運器總成 468 :第一端板 470 :第二端板 472 :連結構件 474 :轉子總成 476 :轉子 478 :底座板 201230144 480 :驅動轴 482 ：外環 484 :底座 4 8 6 :連接構件 488 :空穴 490 :驅動板 492 :輔助驅動桿 494 :密封件 496 :容室本體 497 :開口環總成 498 :第一端部 5 00 :第二端部 502 :外壁 504 ：開口 506 :空穴 5 07 :襯裏 508 :門總成 5 1 0 :喷淋總成 5 1 2 :馬達總成 5 1 4 :馬達 5 1 6 :安裝板 5 1 8 :開孔 520 :歧管 521 :入口通口 201230144 5 2 2 :喷嘴 523 :喷嘴接受座 524 :喷嘴扣持件 525 ：開口 526 :支撐板 5 2 8 :前面板 530 ：門 5 32 :線性轨道或導件，線性致動器 534 :窗口 5 3 6 :安裝構件 5 40 :排氣通道 541 :通氣出口 5 42 :出口或排泄裝置 543 ：排泄出口 544 :再循環系統 546 :傳送槽 548 :泵 550 :過濾器 552 :濃度監控器 554 :流量計 5 5 6 :熱交換器 5 5 8 :計量容器 560 :計量泵 600 :第一步驟 42 201230144 6 0 2 :第二步驟 604 :步驟 6 0 8 :步驟 6 1 0 :步驟 6 1 2 :預清潔步驟 6 1 4 :粗蝕刻步驟 6 1 6 :拋光蝕刻步驟 6 1 8 :沖洗步驟 6 2 0 :步驟 624 :步驟 6 2 6 :步驟 628 :步驟 6 3 0 :步驟 ΜΒΤ、RT、WPT :厚度 w :寬度 43Fig. 6B is a cooperation between the chuck shown in Fig. 6A and the chuck of the workpiece and the workpiece. The crucible 7A is a workpiece of the collet according to the present invention in which the thinning is fixed. Fig. 7B is a partial enlarged view of the collet and the stem shown in Fig. 7A showing the cooperation between the head and the workpiece. Figures 8 and 9 are flow charts showing the private aspects of the downtime in accordance with the present invention. Fig. 10 is a perspective view showing a semiconductor workpiece in which the method of the present invention is degenerated according to the method of the present invention. Figure 11 is a cross-sectional view of the thinned semiconductor guard of Figure 1. Figure 12 is a perspective view of an implement for processing a semiconductor workpiece. Figure 13 is a perspective view of the implement of Figure 12 with the panel removed to reveal the tilting station in the implement. Figure 14 is an exploded perspective view of a embodiment of a processing chamber used in the workstation of the implement of Figure 12; Figure 15 is a perspective view of an embodiment of a carrier assembly for use with a processing chamber. Figure 16 is a cross-sectional side view of the carrier assembly taken in line A_A of Figure 15. 17 is a perspective view of another embodiment of a carrier assembly for use with the processing chamber of FIG. Figure 18 is a front perspective view of the rotor assembly used in the workpiece processing system. Figure 19 is a rear exploded perspective view of the rotor assembly of Figure 8. Figure 20 is a front perspective view of the process chamber of Figure 14. 21 is a rear perspective view of the process chamber of FIG. 14. Figure 22 is a rear cross-sectional view of the processing chamber of the crucible 21. Figure 23 is a cross-sectional side view of the venting and draining assembly of the processing chamber of Figure 21; Figure 24 is a cross-sectional side elevational view of the process chamber of Figure 21 through the spray assembly. Figure 25 is a flow chart showing a one-way method for thinning a workpiece in a process chamber. Figure 26 is a streamline diagram showing a single pass fluid transfer design. Figure 27 is a schematic illustration of the implement incorporating the processing chamber of Figure 14. [Description of main component symbols] 1 0 : Chuck 12 : Support body 37 201230144 1 3 : Outer end portion 1 4 : Binder 1 6 : Sealing member 18: Groove or recess 20 : Engagement member 22 : Recess 24 : Sealing member 26: lip or step 28: support surface 30: outer peripheral end 3 2: inclined surface 3 4: inclined surface 36: notch 3 8 : groove 40: flushing hole 42: lower portion 44: ring Concave portion 46: lower portion 48: joint ring 49: extension portion 50: semiconductor workpiece 5 1 : device side 52: bevel portion (peripheral edge) 53: back side 38 201230144 projection recess 60: inner side wall 62 : convex shape 64 : end wall 6 6 : concave shape 70 circumference 72 : main body 2 0 0 : step 2 1 0 : step 220 : step 23 0 : step 2 4 0 : step 3 0 0 : step 3 1 0 : Step 3 2 0 : Step 3 3 0 : Step 3 40 : Step 3 5 0 : Step 360 : Step . 3 7 0 : Step 3 8 0 : Step or implement processing module 4 1 0 : Machine 4 1 2 : Workpiece 4 1 4 : Chassis 416 : First 201230144 4 1 8 : Second processing module 420 : Processing chamber 422 : Drying and flushing chamber 424 : Control panel 425 : Electronic control area 426 : Display 427 : Module 430: collet 452: carrier assembly 454: first carrier member 456: second carrier member 457: first engagement member 458: support leg 459: second engagement member 460: opening 4 62: center Drilling area 4 64 : positioning member 466 : carrier assembly 468 : first end plate 470 : second end plate 472 : coupling member 474 : rotor assembly 476 : rotor 478 : base plate 201230144 480 : drive shaft 482 : external Ring 484: base 4 8 6 : connecting member 488 : cavity 490 : drive plate 492 : auxiliary drive rod 494 : seal 496 : chamber body 497 : split ring assembly 498 : first end 5 00 : second end Portion 502: Outer wall 504: Opening 506: Hole 5 07: Lining 508: Door assembly 5 1 0: Spray assembly 5 1 2: Motor assembly 5 1 4: Motor 5 1 6 : Mounting plate 5 1 8 : Opening 520: manifold 521: inlet port 201230144 5 2 2 : nozzle 523: nozzle receiving seat 524: nozzle holder 525: opening 526: support plate 5 2 8 : front panel 530: door 5 32: linear track or Guide, linear actuator 534: window 5 3 6 : mounting member 5 40 : exhaust passage 541 : vent outlet 5 42 : outlet or drain 543 : row Vent outlet 544: recirculation system 546: transfer tank 548: pump 550: filter 552: concentration monitor 554: flow meter 5 5 6 : heat exchanger 5 5 8 : metering container 560: metering pump 600: first step 42 201230144 6 0 2 : second step 604 : step 6 0 8 : step 6 1 0 : step 6 1 2 : pre-cleaning step 6 1 4 : rough etching step 6 1 6 : polishing etching step 6 1 8 : rinsing step 6 2 0: Step 624: Step 6 2 6 : Step 628: Step 6 3 0: Step ΜΒΤ, RT, WPT: Thickness w: Width 43

Claims (1)

201230144 七、申請專利範圍： 1. 種同蚪處理多個半導體工件的方法，包含以下步 驟： 將多個工件置入載運器中； 將該載運器載入處理容室，該處理容室包含： 谷至本體，具有第一端部，第二端部，外壁， 及在該第-端部處的引至一空穴内的開口； 門總成，相鄰於該容室本體的該第一端部連接 於該谷室本體，兮* pq她J·、 FT I 門w成具有一門，其從使該門關閉通 至該容室本體的該咖々从# 0日 工八的该開口的第〆位置移動至使通 至該容室本體的該Vt?—认4日日 組W成二八的泫開口可供進出的第二位置； 喷淋總成，具有與多個嘴嘴連通的歧管，以將 處理流體喷淋至該交玄太辟 、 邊合至本體的該空穴内，該歧管具有用 來接收該處理流體的第一入 的弟入口通口及相反的第二入口诵 口； ^ 在該處理容室的該空穴中旋轉該載運器；及 將處理流體經由該喷嘴噴 的曝露部份上。 該載運器中的該工件 2. 如申請專利範圍第1項 、 具有多個$ Υ Μ π 、 a勺方法，其中該載運器 ”有夕個疋位構件’該工件 绝, 八5亥載運益内成為其邊 緣在该定位構件之間。 ，、兔 3. 如申請專利範圍第！項 下步驟： 疋的方法，進一步包含以 及 將每一工件固定在夾頭中； 44 201230144 將該夾頭置入該載運哭 間。 D内在該載運器的定位構件之 4.如申請專利範園第3項 蓋該工件的背側的周邊部份、，^的方法，其中該夾頭覆 面面積的至少95%成為曝二：了該工件的該背側的表 5·如申請專利範圍第丨項戶: 下步驟： 的方法’進—步包含以 將該載運器置入該處理 處理容室具有一馬達；&amp; …-轉子總成内’該 ，動該馬達以在該處理容室中旋轉該轉子總成。 至少1^ ^ 員斤述的方法，其中該載運器 乂。卩伤地由聚四氟乙烯製成。 ;7·如中請專利範圍第1項所述的方法，進-步包含將 5亥處理容室的該空穴同時排氣及排泄的步驟，該處理容 至=從接近該容室本體的該第一端部之處延伸至接近 ，：室本體的該第二端部之處的排氣通道，並且該處理 容室具有從接近該容室本體的該第一端部之處延伸至接 L X谷至本體的該第二端部之處的排泄滑槽。 8 ·如申請專利範圍第1項所述的方法，進一步包含在 該工件已被薄化之後沖洗及乾燥該工件的步驟。 9.如申請專利範圍第8項所述的方法，其中沖洗該工 件的步驟包含對該工件施加去離子水。 1 〇.如申請專利範圍第8項所述的方法，其中乾燥該 件的步驟包含對該工件施加異丙醇（isopropyl alcohol 45 201230144 )及熱氮氣的至少之一。 11 ·如申請專利範圍第1項所述的方法，其中噴淋處 理流體至該工件上的步驟包含在該工件於該處理容室中 被旋轉時，經由該噴淋總成的多個噴嘴喷淋處理流體至 該工件上。 1 2.如申請專利範圍第丨1項所述的方法，其中該處理 流體係擇自由水，過氧化氫，臭氧，氫氧化鉀，氩氧化 鈉，氫氟酸，硝酸，硫酸，矽酸，及磷酸所構成的群類 1 3 ·如申請專利範圍第丨丨項所述的方法，進—步包含 回收來自s亥處理容室内的用過的處理流體的步驟。 14.如申請專利範圍第丨項所述的方法，其中從該噴 淋總成喷淋處理流體至該載運器中的該工件的曝露部份 上的步驟包含以下步驟： 乃 在該處理容室中用清潔溶液預清潔該工件以去 面污染； 斤、表 在該處理容室中用蝕刻流體化學蝕刻該 古* 丁丛.R Λ缚化 牡战蚝埋谷室中沖洗該工件。 15.如申請專利範圍第14項所述的方法，其-、、主 該工件的步驟包含對該工件施加清潔溶液。 … 1 6 ·如申請專利範圍第1 5項所述的方法，其中n 溶液包含水（Η20 )，渦窗儿#广ϊτ ^ &quot; 過虱化虱（Η2〇2)，及氫氧化 ΝΗ4ΟΗ)的至少之_。 辦 46 201230144 】7·如申請專利範圍第14項所述的方法，其中化學钮 刻該載運器中的該卫件的步驟包含在該處理容室中實施 該工件的粗化學蝕刻的步驟，及在該處理容室中實施該 工件的拋光化學敍刻的步驟。 18. 如申請專利範圍第17項所述的方法，其中該粗化 學蚀刻的钱刻率大於該拋光化學蝕刻的蝕刻率。 19. 如申請專利範圍帛14項所述的方法，其中化學蝕 刻該工件的步驟包含對該卫件施加氫_ (Μ)，硝酸（ hno3 ) ’及磷酸（h3p〇4 )的溶液。 20. 如申請專利_ 14項所述的方法，其中沖洗該 工件的步驟包含在該處理容室中對該工件施加磷酸（ H3P04)的溶液。 2!•-種薄化半導體工件的背側的方法，該半導體工 件的該背侧具有表面面積BSSA，該 “ u 3 Μ下步驟. 將該半導體工件置入夾頭内，言玄夾頭可覆蓋咳工. 的該背側的周邊部份，留下該BSSA的至少9 Λ工件 狀態；及 °成為曝露 •溥化該工件的該背側的曝露部份，以產生 RT的周緣及具有小於該RT的大約5〇%的严具有厚度 22.如申請專利範圍第21項所述的方法，其中▲遛。 具有小於該RT的大約40%的厚度。 亥主體 23_如申請專利範圍第21項所述的方 具有小於該RT的大約3 〇%的厚度。 體 24.如申請專利範圍第21項所述的方法， 其中該主體 201230144 具有小於該RT的大約20%的厚度。 2 5.如申請專利範圍第2 1項所述的方法，其中該主體 具有小於該RT的大約1 0%的厚度。 26.如申請專利範圍第 2 1項所述的方法，其中該 BSSA的至少97%成為曝露狀態。 2 7.如申請專利範圍第2 1項所述的方法，其中該 BSSA的至少99%成為曝露狀態。 28. 如申請專利範圍第2 1項所述的方法，其中該周緣 形成在該工件的周邊處。 29. 如申請專利範圍第21項所述的方法，其中該RT 是在200至725微米的範圍内。 3 0.如申請專利範圍第29項所述的方法，其中該主體 具有在大約1 00至1 20微米的範圍内的厚度。 3 1.如申請專利範圍第29項所述的方法，其中該主體 具有在大約5 0至1 00微米的範圍内的厚度。 32. 如申請專利範圍第29項所述的方法，其中該主體 具有在大約25至50微米的範圍内的厚度。 33. 如申請專利範圍第21項所述的方法，其中該主體 具有在大約1 00至1 20微米的範圍内的厚度。 3 4.如申請專利範圍第2 1項所述的方法，其中該主體 具有在大約5 0至1 00微米的範圍内的厚度。 35.如申請專利範圍第2 1項所述的方法，其中該主體 具有在大約25至50微米的範圍内的厚度。 3 6. —種薄化半導體工件的背側的方法，該半導體工 48 201230144 件具有厚度WPT，該方法包含以下步驟·· 將°亥半導體工件放置在一夾頭本體上成 件的該背側曝露； 為使得該工 將一扣持件附著於該夹頭本體成 定於該夾頭本體，且爷I# 于4工件被固 持件覆蓋；及 邊部份被該扣 薄化該工件的該背側的曝露部份， —主體部份，該主體部份呈 生周緣及 贈。 有小於該赠的咖的厚度 37.如申請專利範圍第刊項所述的方法， 工件的該背側的曝露部份 -/匕邊 ,, /外匕3攸g亥工件的兮北 的該曝露部份化學敍刻移去半導體材料。的…丨 38·如申請專利範圍第37項所述的方法 工件的該背側的曝露部份 '、厚化邊 的該背側的該曝露部份的步驟驟進—步包含抛光該工件 39. 一種薄化半導體工件的背側的方 件具有厚度WPT’該方法包含以下步驟： ¥體工 將該半導體工件放置在可環繞該工件 邊部份的夾頭上成為使得$ ^ 的周 曝露； ㈣工件的該背側的-主體部份 將該爽頭及該工件置入—處理容室内；及 施加處理流體於該工伴沾# + 份 以將該主體部份薄化背側的曝露的該主體部 至小於該…口丁的50%。 40. 如申請專利_39項所述的方法，其中施加處 49 201230144 理流體於曝露的該主體部份的 理流體嘴淋至該工件的該背側的該主體 理彳範圍第39項所述的方法，龙⑼加處 二：曝…主體部份的步驟包露 口 Μ刀次入一處理流體體積内。 ，路的 42.如申請專利範圍第刊項 流體為擇自由纟，過氧化氣，臭氧的方法，其令該處理 納’氣敗酸&quot;肖酸，硫酸，石夕酸，及=化卸，氣氧化 的處理流體。 &amp;馱所構成的群類 1申請專利範圍第39項所述的方 在该工件被薄化之後沖洗該步包含 44,如申請專利範圍第4 、μ主—°卩伤的步驟。 牛赚4八V- 、斤述的方法’其中該、、中 乂驟包含在該工件被薄化之 /冲洗 體部份。 复知加磷酸於該工件的該主 45·如申請專利範圍第4 乾燥該薄化的工件的步驟。、斤述的方法’進-步包含 ?.如申請專利範圍第39項 -體是以第-蝕刻率被施 ㊉ 宁。亥處理 隨後以第二㈣率被施加…：的該主體部份’然後 -如申請專利範圍第4:::Γ體部份。 餘刻率大於該第二㈣率。、4的方法，其中該第- 測量利範圍第Μ項所述的方法，進-步包含 :;件的该主體部份的該厚度的步驟。 •如申請專利範圍第Μ項所述的方法，其中該處理 50 201230144 丹鳴流量，濃度，及溫度，並且$ 該處理流體的該流量，該濃度，方法進一步包含 的步驟。 及该溫度的至少之 5 0 — 一絲&quot;丄一 —.. 流體具有流量，濃度 監控 驟： 50. 一種薄化半導體工件的背側 决，包含以下步 將該半導體工件放置在一夾頭上. 將一扣持件附著於該夾頭以將钕， ，並且該扣持杜 工件固定於分+ 符件％繞該工件的該背 疋於邊夾頭 得該工件的該择 的周邊部份KV、4 亥方側的-主體部份曝· ▼ f知成為使 將該夹頭® 硲； 人碩置入—载運器内； 將5亥载運恭λ Π戟 處理容室内； 在该處理容 在彳 中旋轉該夾頭；及 在该夹碩旋轉 及 曝露的該主體部份：a處理流體於該工件的該背側的 薄化至-厚度，且產Χ將5亥工件的該背側的該主體部份 厚度的周緣。 生具有比該主體部份的該厚度大的 51201230144 VII. Patent Application Range: 1. A method for processing a plurality of semiconductor workpieces by the same method, comprising the steps of: placing a plurality of workpieces into a carrier; loading the carrier into a processing chamber, the processing chamber comprising: a valley-to-body having a first end, a second end, an outer wall, and an opening at the first end leading into a cavity; a door assembly adjacent to the first end of the chamber body Connected to the trough body, the J*pq her J., FT I door w has a door, which is closed from the opening of the opening to the chamber of the chamber from the #0日工八The position is moved to a second position that allows the opening of the Vt to the four-day group W of the chamber body to be in and out; the spray assembly has a manifold connected to the plurality of nozzles Spraying a treatment fluid into the cavity of the body, the manifold having a first inlet port for receiving the treatment fluid and an opposite second inlet port; ^ rotating the carrier in the cavity of the processing chamber; and processing the stream The body is sprayed onto the exposed portion of the nozzle. The workpiece in the carrier 2. As claimed in the first item of the patent scope, having a plurality of methods of $ Υ π π , a spoon , wherein the carrier "has a squatting member" of the workpiece, the occupant The inside becomes its edge between the positioning members. , Rabbit 3. As in the scope of the patent application section: The method of 疋 further includes and fixes each workpiece in the chuck; 44 201230144 Into the carrying crying chamber. D. The positioning member of the carrier is 4. The method of covering the peripheral portion of the back side of the workpiece, such as the third part of the patent application garden, wherein the chuck covering area is at least 95 % becomes the second exposure: Table 5 of the back side of the workpiece. As in the scope of the patent application, the following method: The method of the following step: the step of including the carrier into the processing chamber has a motor ; &amp; ...-in the rotor assembly, the motor is rotated to rotate the rotor assembly in the processing chamber. At least 1 ^ ^ members of the method, wherein the carrier is smashed. Made of vinyl fluoride. The method of claim 1, further comprising the step of simultaneously venting and draining the cavity of the 5 liter processing chamber, the processing being allowed to extend from near the first end of the chamber body Up to: an exhaust passage at the second end of the chamber body, and the processing chamber has a second portion extending from the first end adjacent to the chamber body to the LX valley to the body The discharge chute at the end. 8 The method of claim 1, further comprising the step of rinsing and drying the workpiece after the workpiece has been thinned. The method, wherein the step of rinsing the workpiece comprises applying deionized water to the workpiece. The method of claim 8, wherein the step of drying the article comprises applying isopropyl alcohol to the workpiece ( The method of claim 1, wherein the step of spraying the treatment fluid onto the workpiece comprises rotating the workpiece in the processing chamber. When through the spray The plurality of nozzles spray the treatment fluid onto the workpiece. 1 2. The method of claim 1, wherein the treatment stream system is free of water, hydrogen peroxide, ozone, potassium hydroxide, argon. a group consisting of sodium oxide, hydrofluoric acid, nitric acid, sulfuric acid, citric acid, and phosphoric acid. 1 3. The method described in the scope of the patent application, including further recovery from the shai treatment chamber The method of treating a fluid, the method of claim 2, wherein the step of spraying the treatment fluid from the spray assembly onto the exposed portion of the workpiece in the carrier comprises the following steps : pre-cleaning the workpiece with a cleaning solution in the processing chamber to remove surface contamination; jin, the surface is chemically etched with the etching fluid in the processing chamber. The * 丛 . R R Λ 牡 牡 蚝 蚝 蚝Flush the workpiece. 15. The method of claim 14, wherein the step of the main workpiece comprises applying a cleaning solution to the workpiece. ... 1 6 · The method of claim 15, wherein the n solution comprises water (Η20), vortex window #广ϊτ ^ &quot; 虱Η虱(Η2〇2), and ΝΗ4ΝΗ) At least _. The method of claim 14, wherein the step of chemically engraving the guard in the carrier comprises the step of performing a rough chemical etching of the workpiece in the processing chamber, and A step of polishing chemical characterization of the workpiece is performed in the processing chamber. 18. The method of claim 17, wherein the crude chemical etching has a greater engraving rate than the polishing chemical etching. 19. The method of claim 14, wherein the step of chemically etching the workpiece comprises applying a solution of hydrogen (Μ), nitric acid (hno3)' and phosphoric acid (h3p〇4) to the guard. 20. The method of claim 14, wherein the step of rinsing the workpiece comprises applying a solution of phosphoric acid (H3P04) to the workpiece in the processing chamber. 2!•- a method of thinning the back side of a semiconductor workpiece, the back side of the semiconductor workpiece having a surface area BSSA, the “u 3 Μ lower step. placing the semiconductor workpiece into the chuck, the sinister chuck can Covering the peripheral portion of the back side of the cough. leaving at least 9 Λ of the workpiece state of the BSSA; and ° becoming exposed to the exposed portion of the back side of the workpiece to produce a peripheral edge of the RT and having a smaller The method of claim 21, wherein ▲ 遛 has a thickness less than about 40% of the RT. The main body 23_ as claimed in claim 21 The party of the item has a thickness of less than about 3% by weight of the RT. The method of claim 21, wherein the body 201230144 has a thickness less than about 20% of the RT. The method of claim 2, wherein the body has a thickness less than about 10% of the RT. 26. The method of claim 21, wherein at least 97% of the BSSA Become exposed. 2 7. If the patent application scope is 2 1 The method, wherein at least 99% of the BSSA is in an exposed state. 28. The method of claim 21, wherein the circumference is formed at a periphery of the workpiece. 29. The method of the present invention, wherein the RT is in the range of from 200 to 725 μm. The method of claim 29, wherein the body has a range of from about 100 to 1200 microns The method of claim 29, wherein the body has a thickness in the range of about 50 to 100 μm. 32. The method of claim 29, wherein The body has a thickness in the range of about 25 to 50 microns. The method of claim 21, wherein the body has a thickness in the range of about 100 to 1 20 microns. The method of claim 2, wherein the body has a thickness in the range of about 50 to 100 μm. 35. The method of claim 2, wherein the body has In the range of approximately 25 to 50 microns Thickness. 3 6. A method for thinning the back side of a semiconductor workpiece, the semiconductor device 48 201230144 having a thickness WPT, the method comprising the following steps: placing the semiconductor workpiece on a chuck body The back side is exposed; in order for the worker to attach a holding member to the collet body to be fixed to the collet body, and the workpiece is covered by the holding member; and the side portion is thinned by the buckle The exposed portion of the back side of the workpiece, the body portion, which is surrounded by a living edge and a gift. There is a thickness smaller than the thickness of the coffee. 37. As described in the patent application, the exposed portion of the back side of the workpiece - / 匕 ,, / / 匕 攸 攸 亥 亥 工件 工件 工件Part of the chemical exposure removes the semiconductor material. The method of the method of claim 37, wherein the exposed portion of the back side of the workpiece, and the step of the exposed portion of the back side of the thickened side, comprises the step of polishing the workpiece 39. A square member for thinning the back side of the semiconductor workpiece has a thickness WPT'. The method comprises the steps of: placing the semiconductor workpiece on a chuck that can surround the edge portion of the workpiece to cause a circumferential exposure of $^; The back side body portion of the workpiece places the tote and the workpiece into the processing chamber; and applying a treatment fluid to the worker to absorb the + + portion to thin the body portion to expose the back side of the exposure The body portion is less than 50% of the mouth. 40. The method of claim </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; The method, the dragon (9) plus two: exposure... the main part of the step of the bag is exposed to a treatment fluid volume. 42. The application of the patent scope of the first article of the fluid is a method of free enthalpy, peroxidation gas, ozone, which makes the treatment of 'depleted acid' "chaic acid, sulfuric acid, ashes acid, and = unloading , gas oxidizing treatment fluid. Groups of &amp; 驮 1 The method described in claim 39 of the patent application is to rinse the step after the workpiece has been thinned to include 44, as in the scope of the patent application 4, μ main-° bruise. The cow earns 4 8 V-, and the method described in the section, wherein the, and the intermediate steps are included in the portion of the workpiece that is thinned/rinsed. The step of drying the thinned workpiece by the addition of phosphoric acid to the main portion of the workpiece 45 as in the scope of the patent application is known. The method described in the 'step-by-step contains?. As claimed in the 39th item - the body is applied at the first etch rate. The hai processing is then applied at the second (fourth) rate of the main part of the :: then - as in the patent application section 4::: corpus part. The residual ratio is greater than the second (four) rate. The method of claim 4, wherein the method of the first measurement comprises the step of: the thickness of the body portion of the member. • The method as described in the scope of claim 2, wherein the process 50 201230144 Danming flow, concentration, and temperature, and the flow of the treatment fluid, the concentration, the method further comprises the steps. And at least 50 of the temperature - a filament &quot; 丄一—.. The fluid has a flow rate, concentration monitoring step: 50. A thinned semiconductor workpiece back side, comprising the following steps to place the semiconductor workpiece on a chuck. Attaching a fastening member to the collet to fix the crucible, and the holding de-holding workpiece is fixed to the sub-symbol member. The surrounding peripheral portion KV of the workpiece is wound around the side collet. 4, the side of the side of the side of the side of the side of the sea, the body part of the exposure, the body is exposed to the inside of the carrier; the 5 hai gong λ Π戟 Π戟 processing room; Rotating the collet in the crucible; and the main portion of the main body that rotates and exposes the a: a treatment fluid is thinned to a thickness on the back side of the workpiece, and the back of the workpiece is 5 gallons The circumference of the thickness of the body portion of the side. Produced to have a larger thickness than the body portion 51
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Applications Claiming Priority (4)

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US10/922,762 US20060040111A1 (en) 2004-08-20 2004-08-20 Process chamber and system for thinning a semiconductor workpiece
US10/923,436 US20060046499A1 (en) 2004-08-20 2004-08-20 Apparatus for use in thinning a semiconductor workpiece
US10/923,132 US7354649B2 (en) 2004-08-20 2004-08-20 Semiconductor workpiece
US10/923,363 US7288489B2 (en) 2004-08-20 2004-08-20 Process for thinning a semiconductor workpiece

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