JP2008506217A - ダミーワード線を備えたフラッシュメモリアレイの消去電圧分布の改良方法 - Google Patents
ダミーワード線を備えたフラッシュメモリアレイの消去電圧分布の改良方法 Download PDFInfo
- Publication number
- JP2008506217A JP2008506217A JP2007520416A JP2007520416A JP2008506217A JP 2008506217 A JP2008506217 A JP 2008506217A JP 2007520416 A JP2007520416 A JP 2007520416A JP 2007520416 A JP2007520416 A JP 2007520416A JP 2008506217 A JP2008506217 A JP 2008506217A
- Authority
- JP
- Japan
- Prior art keywords
- word line
- memory device
- dummy word
- erase
- operating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
Abstract
Description
Claims (10)
- 複数の動作ワード線(22)と前記動作ワード線の1つの端部に近接する少なくとも1つのダミーワード線(26)を備えたフラッシュメモリアレイ(4)のメモリデバイス(30)の消去方法であって、
前記ワード線にゲート電圧を印加するステップと、
前記ダミーワード線にバイアス電圧を印加するステップと、を含む方法。 - 前記バイアス電圧は前記ゲート電圧にほぼ等しい、請求項1に記載の方法。
- 前記バイアス電圧は、前記動作ワード線の1つの端部に対して、消去しきい電圧分布を下方にシフトさせる、請求項1〜2のいずれかに記載の方法。
- 前記動作ワード線の1つの端部に対する前記消去しきい電圧分布は、前記端部の動作ワード線間に配置された前記動作ワード線に対する消去しきい値分布とオーバーラップするようにシフトされる、請求項3記載の方法。
- 消去しきい電圧分布における前記バイアス電圧と前記シフトとはほぼ線形関係を有する、請求項3記載の方法。
- 前記メモリデバイスはフローティングゲートメモリデバイスである、請求項1〜5のいずれかに記載の方法。
- 前記メモリデバイスは複数の電荷捕獲領域を有する電荷捕獲誘電メモリである、請求項1〜5のいずれかに記載の方法。
- 前記バイアス電圧の印加ステップは、前記ダミーワード線と前記動作ワード線の1つの端部との間に電気的接続を確立するステップを含む、請求項1〜7のいずれかに記載の方法。
- 消去動作を行うために構成されたフラッシュメモリユニット(2)であって、
複数の動作ワード線(22)と複数のビット線(14)とによって形成されるメモリデバイス(30)のセクタと、
前記動作ワード線の1つの端部に近接する少なくとも1つのダミーワード線(26)と、
前記ダミーワード線と前記動作ワード線の1つの端部とを電気的に接続する論理ユニット(8)と、を含むフラッシュメモリユニット(2)。 - 前記メモリデバイスは、フローティングゲートメモリデバイスおよび電荷捕獲誘電メモリデバイスの1つから選択される、請求項9に記載のフラッシュメモリユニット。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/885,268 US6987696B1 (en) | 2004-07-06 | 2004-07-06 | Method of improving erase voltage distribution for a flash memory array having dummy wordlines |
PCT/US2005/023632 WO2006014386A1 (en) | 2004-07-06 | 2005-06-30 | Method of improving erase voltage distribution for a flash memory array having dummy wordlines |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008506217A true JP2008506217A (ja) | 2008-02-28 |
Family
ID=35058971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007520416A Pending JP2008506217A (ja) | 2004-07-06 | 2005-06-30 | ダミーワード線を備えたフラッシュメモリアレイの消去電圧分布の改良方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6987696B1 (ja) |
JP (1) | JP2008506217A (ja) |
KR (1) | KR100928736B1 (ja) |
CN (1) | CN101015020A (ja) |
DE (1) | DE112005001595B4 (ja) |
GB (1) | GB2431027B (ja) |
TW (1) | TWI367488B (ja) |
WO (1) | WO2006014386A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007200533A (ja) * | 2006-01-25 | 2007-08-09 | Samsung Electronics Co Ltd | Norフラッシュメモリ及びその消去方法 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE602004026934D1 (de) * | 2004-08-30 | 2010-06-10 | Spansion Llc | Löschverfahren für nichtflüchtige speicherung und nichtflüchtige speicherung |
US7440322B2 (en) * | 2006-04-20 | 2008-10-21 | Sandisk Corporation | Method and system for flash memory devices |
US7518911B2 (en) * | 2006-05-25 | 2009-04-14 | Sandisk Corporation | Method and system for programming multi-state non-volatile memory devices |
JP2008135100A (ja) * | 2006-11-28 | 2008-06-12 | Toshiba Corp | 半導体記憶装置及びそのデータ消去方法 |
US7535764B2 (en) * | 2007-03-21 | 2009-05-19 | Sandisk Corporation | Adjusting resistance of non-volatile memory using dummy memory cells |
KR101434401B1 (ko) | 2007-12-17 | 2014-08-27 | 삼성전자주식회사 | 집적 회로 메모리 장치 |
US7872917B2 (en) * | 2007-12-25 | 2011-01-18 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory device and memory system including the same |
KR101468098B1 (ko) | 2008-06-23 | 2014-12-04 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 포함하는 메모리 시스템 |
US7983078B2 (en) * | 2008-09-24 | 2011-07-19 | Sandisk Technologies Inc. | Data retention of last word line of non-volatile memory arrays |
US7924591B2 (en) * | 2009-02-06 | 2011-04-12 | Macronix International Co., Ltd. | Memory device with shielding plugs adjacent to a dummy word line thereof |
WO2010141419A2 (en) * | 2009-06-01 | 2010-12-09 | Raytheon Company | Non-kinematic behavioral mapping |
TWI427636B (zh) * | 2009-11-27 | 2014-02-21 | Macronix Int Co Ltd | 於一記憶積體電路上進行抹除操作之方法與裝置 |
US8259499B2 (en) | 2010-06-29 | 2012-09-04 | Macronix International Co., Ltd. | Method and apparatus of performing an erase operation on a memory integrated circuit |
US9412598B2 (en) | 2010-12-20 | 2016-08-09 | Cypress Semiconductor Corporation | Edge rounded field effect transistors and methods of manufacturing |
US8263458B2 (en) | 2010-12-20 | 2012-09-11 | Spansion Llc | Process margin engineering in charge trapping field effect transistors |
US8897070B2 (en) | 2011-11-02 | 2014-11-25 | Sandisk Technologies Inc. | Selective word line erase in 3D non-volatile memory |
US8488382B1 (en) | 2011-12-21 | 2013-07-16 | Sandisk Technologies Inc. | Erase inhibit for 3D non-volatile memory |
US8908435B2 (en) | 2011-12-21 | 2014-12-09 | Sandisk Technologies Inc. | Erase operation with controlled select gate voltage for 3D non-volatile memory |
US8787094B2 (en) | 2012-04-18 | 2014-07-22 | Sandisk Technologies Inc. | Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits |
US9019775B2 (en) | 2012-04-18 | 2015-04-28 | Sandisk Technologies Inc. | Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current |
US20130314995A1 (en) | 2012-05-24 | 2013-11-28 | Deepanshu Dutta | Controlling Dummy Word Line Bias During Erase In Non-Volatile Memory |
CN106971760A (zh) * | 2017-04-01 | 2017-07-21 | 北京兆易创新科技股份有限公司 | 基于nand闪存的阈值电压校验方法、装置和nand存储设备 |
CN110729303A (zh) * | 2018-07-17 | 2020-01-24 | 中芯国际集成电路制造(上海)有限公司 | Nand存储器及其形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61253695A (ja) * | 1985-05-07 | 1986-11-11 | Hitachi Ltd | 半導体記憶装置 |
JPS62184693A (ja) * | 1986-02-10 | 1987-08-13 | Hitachi Vlsi Eng Corp | 半導体記憶装置 |
WO2002071410A2 (en) * | 2001-02-28 | 2002-09-12 | Advanced Micro Devices, Inc. | Higher program threshold voltage and faster programming rates based on improved erase methods |
JP2004127346A (ja) * | 2002-09-30 | 2004-04-22 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JP2005063650A (ja) * | 2003-08-19 | 2005-03-10 | Samsung Electronics Co Ltd | ダミーセルを有するフラッシュメモリ素子及びその消去方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1247650B (it) * | 1990-10-31 | 1994-12-28 | Sgs Thomson Microelectronics | Memoria flash eprom con aumentata immunita' da soft programming su una linea di riferimento |
JP3348248B2 (ja) * | 1992-04-22 | 2002-11-20 | 富士通株式会社 | 半導体記憶装置及びその情報の消去・書き込み方法 |
US5559742A (en) * | 1995-02-23 | 1996-09-24 | Micron Technology, Inc. | Flash memory having transistor redundancy |
KR0170707B1 (ko) * | 1995-11-29 | 1999-03-30 | 김광호 | 비휘발성 메모리 소자 및 그 구동 방법 |
KR100190089B1 (ko) * | 1996-08-30 | 1999-06-01 | 윤종용 | 플래쉬 메모리장치 및 그 구동방법 |
US6009017A (en) * | 1998-03-13 | 1999-12-28 | Macronix International Co., Ltd. | Floating gate memory with substrate band-to-band tunneling induced hot electron injection |
US6309926B1 (en) * | 1998-12-04 | 2001-10-30 | Advanced Micro Devices | Thin resist with nitride hard mask for gate etch application |
US6278633B1 (en) * | 1999-11-05 | 2001-08-21 | Multi Level Memory Technology | High bandwidth flash memory that selects programming parameters according to measurements of previous programming operations |
US6215702B1 (en) * | 2000-02-16 | 2001-04-10 | Advanced Micro Devices, Inc. | Method of maintaining constant erasing speeds for non-volatile memory cells |
US6356482B1 (en) * | 2000-02-24 | 2002-03-12 | Advanced Micro Devices, Inc. | Using negative gate erase voltage to simultaneously erase two bits from a non-volatile memory cell with an oxide-nitride-oxide (ONO) gate structure |
US6295228B1 (en) * | 2000-02-28 | 2001-09-25 | Advanced Micro Devices, Inc. | System for programming memory cells |
US6246611B1 (en) * | 2000-02-28 | 2001-06-12 | Advanced Micro Devices, Inc. | System for erasing a memory cell |
US6331951B1 (en) * | 2000-11-21 | 2001-12-18 | Advanced Micro Devices, Inc. | Method and system for embedded chip erase verification |
DE10058969A1 (de) | 2000-11-28 | 2002-06-13 | Infineon Technologies Ag | Zellenfeld für einen Halbleiterspeicher mit funktionalen Speicherzellen und Dummy-Speicherzellen |
US6344994B1 (en) * | 2001-01-31 | 2002-02-05 | Advanced Micro Devices | Data retention characteristics as a result of high temperature bake |
US6400624B1 (en) * | 2001-02-26 | 2002-06-04 | Advanced Micro Devices, Inc. | Configure registers and loads to tailor a multi-level cell flash design |
US6442074B1 (en) * | 2001-02-28 | 2002-08-27 | Advanced Micro Devices, Inc. | Tailored erase method using higher program VT and higher negative gate erase |
US6307784B1 (en) * | 2001-02-28 | 2001-10-23 | Advanced Micro Devices | Negative gate erase |
US6522585B2 (en) * | 2001-05-25 | 2003-02-18 | Sandisk Corporation | Dual-cell soft programming for virtual-ground memory arrays |
US6370061B1 (en) * | 2001-06-19 | 2002-04-09 | Advanced Micro Devices, Inc. | Ceiling test mode to characterize the threshold voltage distribution of over programmed memory cells |
US6788602B2 (en) * | 2002-08-09 | 2004-09-07 | Macronix International Co., Ltd. | Memory device and operation thereof |
US6707078B1 (en) * | 2002-08-29 | 2004-03-16 | Fasl, Llc | Dummy wordline for erase and bitline leakage |
US6778437B1 (en) * | 2003-08-07 | 2004-08-17 | Advanced Micro Devices, Inc. | Memory circuit for providing word line redundancy in a memory sector |
-
2004
- 2004-07-06 US US10/885,268 patent/US6987696B1/en active Active
-
2005
- 2005-06-30 WO PCT/US2005/023632 patent/WO2006014386A1/en active Application Filing
- 2005-06-30 GB GB0701512A patent/GB2431027B/en not_active Expired - Fee Related
- 2005-06-30 DE DE112005001595.5T patent/DE112005001595B4/de not_active Expired - Fee Related
- 2005-06-30 JP JP2007520416A patent/JP2008506217A/ja active Pending
- 2005-06-30 CN CNA2005800227866A patent/CN101015020A/zh active Pending
- 2005-06-30 KR KR1020067027491A patent/KR100928736B1/ko active IP Right Grant
- 2005-07-01 TW TW094122266A patent/TWI367488B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61253695A (ja) * | 1985-05-07 | 1986-11-11 | Hitachi Ltd | 半導体記憶装置 |
JPS62184693A (ja) * | 1986-02-10 | 1987-08-13 | Hitachi Vlsi Eng Corp | 半導体記憶装置 |
WO2002071410A2 (en) * | 2001-02-28 | 2002-09-12 | Advanced Micro Devices, Inc. | Higher program threshold voltage and faster programming rates based on improved erase methods |
JP2004127346A (ja) * | 2002-09-30 | 2004-04-22 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JP2005063650A (ja) * | 2003-08-19 | 2005-03-10 | Samsung Electronics Co Ltd | ダミーセルを有するフラッシュメモリ素子及びその消去方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007200533A (ja) * | 2006-01-25 | 2007-08-09 | Samsung Electronics Co Ltd | Norフラッシュメモリ及びその消去方法 |
Also Published As
Publication number | Publication date |
---|---|
GB2431027A (en) | 2007-04-11 |
GB0701512D0 (en) | 2007-03-07 |
WO2006014386A1 (en) | 2006-02-09 |
TWI367488B (en) | 2012-07-01 |
CN101015020A (zh) | 2007-08-08 |
US6987696B1 (en) | 2006-01-17 |
KR20070022812A (ko) | 2007-02-27 |
KR100928736B1 (ko) | 2009-11-27 |
DE112005001595T5 (de) | 2007-05-24 |
GB2431027B (en) | 2008-12-24 |
TW200620298A (en) | 2006-06-16 |
US20060007752A1 (en) | 2006-01-12 |
DE112005001595B4 (de) | 2018-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2008506217A (ja) | ダミーワード線を備えたフラッシュメモリアレイの消去電圧分布の改良方法 | |
KR101099772B1 (ko) | 과도소거된 셀을 복원하기 위해 양의 게이트 스트레스를 사용하는 메모리 디바이스 및 방법 | |
JP4601250B2 (ja) | デュアルビットメモリ消去検証のための方法およびシステム | |
JP3540640B2 (ja) | 不揮発性半導体記憶装置 | |
US5416738A (en) | Single transistor flash EPROM cell and method of operation | |
US7773429B2 (en) | Non-volatile memory device and driving method thereof | |
US7184318B2 (en) | Semiconductor memory device | |
JP2005526341A (ja) | 相補的な二つのプログラムされたデュアルビット基準セルの電圧の平均化に基づく基準電圧発生システム及び方法 | |
JPH05258583A (ja) | 不揮発性記憶装置の制御方法 | |
JP4153499B2 (ja) | 電気的に書き込みおよび消去が可能なメモリセルの動作方法および電気的なメモリのための記憶装置 | |
EP1774530B1 (en) | Flash memory unit and method of programming a flash memory device | |
US6452840B1 (en) | Feedback method to optimize electric field during channel erase of flash memory devices | |
US6185131B1 (en) | Nonvolatile semiconductor storage device capable of electrically isolating dummy cell array region from memory cell array region | |
JP4252464B2 (ja) | 動的ページプログラムのためのリフレッシュ方法 | |
KR20060037372A (ko) | 이산 전하 저장 소자들을 갖는 메모리의 프로그래밍 | |
JP2005516330A (ja) | 電荷注入 | |
US5408430A (en) | Method for operating nonvolatile memory semiconductor devices memories | |
US7936607B2 (en) | Non-volatile memory | |
EP1254460B1 (en) | 1t flash memory recovery scheme for over-erasure | |
US6147907A (en) | Biasing scheme to reduce stress on non-selected cells during read | |
US20030039152A1 (en) | It flash memory recovery scheme for over-erasure | |
TW201541460A (zh) | 降低記憶體臨限電壓的方法、非揮發性記憶體的抹除操作方法、及使用該方法的非揮發性記憶體 | |
JP2004063966A (ja) | 不揮発性半導体記憶装置およびその駆動方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080604 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20100324 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100412 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100818 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101020 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101026 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110125 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110201 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110225 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110304 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110325 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110928 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20111005 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20111028 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120326 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120329 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120426 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120502 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20120831 |