JP2008296582A - 膜上に圧電アクチュエータの配列を形成する方法 - Google Patents
膜上に圧電アクチュエータの配列を形成する方法 Download PDFInfo
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Abstract
【解決手段】膜(18)上に、圧電アクチュエータの配列を形成する方法であって、連続する上部分により一体接続され、前記アクチュエータ(20)の圧電層(36)を形成することになる島部の配列を有する、圧電櫛状構造を調製するステップであって、前記島部は、底部側に電極(32)を有する、ステップと、その底部電極を有する前記櫛状構造を、前記膜(18)の表面に取り付けるステップと、前記櫛状構造の前記連続する上部分を除去するステップであって、これにより前記アクチュエータが相互に分離される、ステップと、前記アクチュエータの前記圧電層(36)の上部表面に、上部電極(34)を形成するステップと、を有ることを特徴とする方法が提供される。
【選択図】図7
Description
チップの最下部の3行は、圧力チャンバ16とノズル12とを有するチャンバ板14の上面図を示している。この例では、フィルタ通路は、ラビリンス70を介して、圧力チャンバ16と連通している。これらのラビリンスは、十分な流れ制限を提供する役割を果たす。図に示すように、圧力チャンバ16は、ほぼ四角形状であり、ラビリンスは、チャンバのノズル12とは対角側のコーナー部に通じている。
Claims (9)
- 共通の膜上に、圧電アクチュエータの配列を形成する方法であって、
連続する上部分により一体接続され、前記アクチュエータの圧電層を形成することになる島部の配列を有する、圧電櫛状構造を調製するステップであって、前記島部は、底部側に電極を有する、ステップと、
その底部電極を有する前記櫛状構造を、前記膜の表面に取り付けるステップと、
前記櫛状構造の前記連続する上部分を除去するステップであって、これにより前記アクチュエータが相互に分離される、ステップと、
前記アクチュエータの前記圧電層の上部表面に、上部電極を形成するステップと、
を有し、
前記膜は、まず厚い担持板として構成され、
前記膜は、前記櫛状構造が取り付けられた後、前記アクチュエータの反対の側から、材料を除去するステップにより、所望の均一な厚さにされ、
複数のアクチュエータにわたって延在する、前記膜の連続的な平坦底部表面が得られることを特徴とする方法。 - 前記担持板から材料を除去するステップは、前記上部電極が形成されてから実施されることを特徴とする請求項1に記載の方法。
- 前記担持板の材料は、エッチング処理により除去され、
前記担持板は、エッチング停止層として使用される酸化層を有するSOIウェハであることを特徴とする請求項1または2に記載の方法。 - 前記担持板には、該担持板の前記材料が除去される前に、インク供給システムおよび前記アクチュエータを収容するチャンバを定形する剛性分配板が取り付けられることを特徴とする請求項1乃至3のいずれか一つに記載の方法。
- 前記圧電櫛状構造を調製するステップは、さらに、
底部側に電極を有する圧電スラブを調製するステップと、
前記スラブの底部表面に溝を切断形成するステップと、
を有し、
これにより、連続する上部分により一体接続された、前記島部の配列が形成されることを特徴とする請求項1乃至4のいずれか一つに記載の方法。 - 前記アクチュエータは、熱圧着接合処理により、前記膜に取り付けられることを特徴とする請求項5に記載の方法。
- 前記膜に取り付けられた状態のスラブは、両側に電極を有し、
該電極は、前記熱圧着接合処理の間、短絡されることを特徴とする請求項6に記載の方法。 - 前記アクチュエータが前記膜に取り付けられている間、
各アクチュエータの上部表面の周辺部分、前記アクチュエータの側面、および前記膜上の周囲部分は、前記アクチュエータに前記上部電極が設置される前に、絶縁層で被覆されることを特徴とする請求項1乃至7のいずれか一つに記載の方法。 - 前記櫛状構造を前記膜に取り付けるステップでは、前記底部電極は、前記膜の上部表面に形成された導電性構造に接触されることを特徴とする請求項1乃至8のいずれか一つに記載の方法。
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Cited By (4)
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JP2008300838A (ja) * | 2007-05-30 | 2008-12-11 | Oce Technol Bv | 圧電アクチュエータおよびその作製方法 |
JP2011206920A (ja) * | 2010-03-26 | 2011-10-20 | Seiko Epson Corp | 液体噴射ヘッド及びその製造方法並びに液体噴射装置 |
US10319950B2 (en) | 2015-12-15 | 2019-06-11 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Evaporation method and evaporation device for organic light-emitting diode substrate |
JP2021534614A (ja) * | 2019-07-22 | 2021-12-09 | 中芯集成電路(寧波)有限公司 | 指紋認識モジュール及びその製造方法、電子機器 |
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WO2012036682A1 (en) | 2010-09-15 | 2012-03-22 | Hewlett-Packard Development Company, L.P. | Fluid nozzle array |
US10870927B2 (en) * | 2017-07-21 | 2020-12-22 | Palo Alto Research Center Incorporated | Digital electrospinning array |
IT202000010264A1 (it) * | 2020-05-07 | 2021-11-07 | St Microelectronics Srl | Attuatore piezoelettrico avente un sensore di deformazione e relativo procedimento di fabbricazione |
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JP2021534614A (ja) * | 2019-07-22 | 2021-12-09 | 中芯集成電路(寧波)有限公司 | 指紋認識モジュール及びその製造方法、電子機器 |
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Also Published As
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US20080295308A1 (en) | 2008-12-04 |
US8869362B2 (en) | 2014-10-28 |
EP1997638B1 (en) | 2012-11-21 |
EP1997638A1 (en) | 2008-12-03 |
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