JP2008274437A5 - - Google Patents
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- JP2008274437A5 JP2008274437A5 JP2008120346A JP2008120346A JP2008274437A5 JP 2008274437 A5 JP2008274437 A5 JP 2008274437A5 JP 2008120346 A JP2008120346 A JP 2008120346A JP 2008120346 A JP2008120346 A JP 2008120346A JP 2008274437 A5 JP2008274437 A5 JP 2008274437A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- chamber
- susceptor
- showerhead
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US91583307P | 2007-05-03 | 2007-05-03 | |
| US60/915,833 | 2007-05-03 | ||
| US11/775,359 | 2007-07-10 | ||
| US11/775,359 US7972470B2 (en) | 2007-05-03 | 2007-07-10 | Asymmetric grounding of rectangular susceptor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008274437A JP2008274437A (ja) | 2008-11-13 |
| JP2008274437A5 true JP2008274437A5 (cg-RX-API-DMAC7.html) | 2011-02-17 |
| JP5427367B2 JP5427367B2 (ja) | 2014-02-26 |
Family
ID=39939727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008120346A Active JP5427367B2 (ja) | 2007-05-03 | 2008-05-02 | 矩形サセプタの非対称な接地 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7972470B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5427367B2 (cg-RX-API-DMAC7.html) |
| KR (2) | KR101011407B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN101906621B (cg-RX-API-DMAC7.html) |
| TW (2) | TWI376763B (cg-RX-API-DMAC7.html) |
Families Citing this family (70)
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| US8281739B2 (en) * | 2007-03-01 | 2012-10-09 | Applied Materials, Inc. | RF shutter |
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| US7988815B2 (en) * | 2007-07-26 | 2011-08-02 | Applied Materials, Inc. | Plasma reactor with reduced electrical skew using electrical bypass elements |
| WO2009073865A1 (en) * | 2007-12-06 | 2009-06-11 | Intevac, Inc. | System and method for dual-sided sputter etch of substrates |
| EP2232958A4 (en) * | 2007-12-25 | 2011-01-19 | Applied Materials Inc | ASYMMETRIC RF CONTROL FOR THE ELECTRODE OF A PLASMA CHAMBER |
| JP5749020B2 (ja) * | 2008-01-31 | 2015-07-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Rf電力をプラズマチャンバに結合するための装置 |
| US20100136261A1 (en) * | 2008-12-03 | 2010-06-03 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
| CN102239542A (zh) * | 2008-12-03 | 2011-11-09 | 应用材料股份有限公司 | 用于均匀性控制的射频返回带的调控方法与设备 |
| KR101534024B1 (ko) * | 2008-12-10 | 2015-07-08 | 주성엔지니어링(주) | 기판처리장치 |
| KR101617781B1 (ko) * | 2009-02-13 | 2016-05-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 챔버 전극을 위한 rf 버스 및 rf 리턴 버스 |
| US8466697B2 (en) * | 2009-04-28 | 2013-06-18 | Lam Research Corporation | Arrangements for detecting discontinuity of flexible connections for current flow and methods thereof |
| KR101634714B1 (ko) * | 2009-05-13 | 2016-06-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 양극산화처리된 샤워헤드 |
| JP2010287639A (ja) * | 2009-06-10 | 2010-12-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| US8360003B2 (en) | 2009-07-13 | 2013-01-29 | Applied Materials, Inc. | Plasma reactor with uniform process rate distribution by improved RF ground return path |
| KR200476124Y1 (ko) * | 2009-09-29 | 2015-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf전력공급 샤워헤드를 위한 편심 접지 복귀 |
| KR101127757B1 (ko) * | 2009-12-02 | 2012-03-23 | 주식회사 테스 | 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버 |
| JP5782226B2 (ja) | 2010-03-24 | 2015-09-24 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP2013526778A (ja) * | 2010-05-12 | 2013-06-24 | アプライド マテリアルズ インコーポレイテッド | 限定プロセス容積pecvdチャンバ |
| JP5375763B2 (ja) * | 2010-07-27 | 2013-12-25 | 三菱電機株式会社 | プラズマ装置およびこれを用いた半導体薄膜の製造方法 |
| CN102810770B (zh) * | 2011-05-31 | 2015-03-04 | 中微半导体设备(上海)有限公司 | 实现等离子体刻蚀腔体与阴极之间电连接的接地器件 |
| JP5824330B2 (ja) * | 2011-11-07 | 2015-11-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
| US8898889B2 (en) | 2011-11-22 | 2014-12-02 | Lam Research Corporation | Chuck assembly for plasma processing |
| US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
| US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
| WO2013078098A1 (en) * | 2011-11-23 | 2013-05-30 | Lam Research Corporation | Multi zone gas injection upper electrode system |
| KR102011535B1 (ko) * | 2011-11-24 | 2019-08-16 | 램 리써치 코포레이션 | 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버 |
| CN102543641B (zh) * | 2012-01-20 | 2015-07-08 | 中微半导体设备(上海)有限公司 | 实现等离子体刻蚀腔体弹性接触的连接器件 |
| US20130206068A1 (en) * | 2012-02-13 | 2013-08-15 | Jozef Kudela | Linear pecvd apparatus |
| US8911588B2 (en) * | 2012-03-19 | 2014-12-16 | Lam Research Corporation | Methods and apparatus for selectively modifying RF current paths in a plasma processing system |
| US9245720B2 (en) * | 2012-06-12 | 2016-01-26 | Lam Research Corporation | Methods and apparatus for detecting azimuthal non-uniformity in a plasma processing system |
| KR102101192B1 (ko) * | 2012-07-27 | 2020-04-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 조면화된 기판 지지부 |
| KR102017744B1 (ko) | 2012-12-12 | 2019-10-15 | 삼성디스플레이 주식회사 | 증착 장치, 이를 이용한 박막 형성 방법 및 유기 발광 표시 장치 제조 방법 |
| TW201437423A (zh) | 2013-02-21 | 2014-10-01 | Applied Materials Inc | 用於注射器至基板的空隙控制之裝置及方法 |
| CN105143502B (zh) * | 2013-03-11 | 2017-11-14 | 应用材料公司 | 高温处理腔室盖体 |
| CN103474319B (zh) * | 2013-09-12 | 2015-11-18 | 武汉新芯集成电路制造有限公司 | 一种减少晶圆葡萄球状缺陷的离子注入机 |
| US20150211114A1 (en) * | 2014-01-30 | 2015-07-30 | Applied Materials, Inc. | Bottom pump and purge and bottom ozone clean hardware to reduce fall-on particle defects |
| JP6233209B2 (ja) * | 2014-06-30 | 2017-11-22 | 豊田合成株式会社 | サセプターとその製造方法 |
| CN104368288A (zh) * | 2014-11-25 | 2015-02-25 | 三明学院 | 低真空低温射频感性耦合等离子体反应器及其使用方法 |
| TW201629264A (zh) | 2015-01-22 | 2016-08-16 | 應用材料股份有限公司 | 用於間隙偵測的智能止動器及控制機制 |
| CN104947072B (zh) * | 2015-05-14 | 2017-12-05 | 昆山龙腾光电有限公司 | 在基板上制作氧化硅薄膜的方法以及薄膜晶体管阵列基板的制作方法 |
| JP6802191B2 (ja) | 2015-06-05 | 2020-12-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | サセプタの位置付け及び回転装置、並びに使用の方法 |
| TWI723024B (zh) | 2015-06-26 | 2021-04-01 | 美商應用材料股份有限公司 | 用於改良的氣體分配的遞迴注入設備 |
| KR102099382B1 (ko) * | 2015-10-07 | 2020-04-13 | 주식회사 원익아이피에스 | 기판처리장치 |
| KR102142557B1 (ko) * | 2016-06-21 | 2020-08-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf 리턴 스트랩 차폐 커버 |
| JP7072572B2 (ja) * | 2016-12-27 | 2022-05-20 | エヴァテック・アーゲー | Rf容量結合二重周波数エッチング反応器 |
| KR102399343B1 (ko) * | 2017-05-29 | 2022-05-19 | 삼성디스플레이 주식회사 | 화학기상 증착장치 |
| EP3588533A1 (en) * | 2018-06-21 | 2020-01-01 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Plasma source and method of operating the same |
| CN111326387B (zh) | 2018-12-17 | 2023-04-21 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体刻蚀设备 |
| CN111326389B (zh) * | 2018-12-17 | 2023-06-16 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体刻蚀设备 |
| KR102700366B1 (ko) * | 2019-01-29 | 2024-08-30 | 주성엔지니어링(주) | 샤워헤드 및 이를 포함하는 기판처리장치 |
| US12467139B2 (en) * | 2019-03-29 | 2025-11-11 | Applied Materials Inc. | Multizone flow distribution system |
| CN114008755B (zh) * | 2019-04-29 | 2024-12-20 | 应用材料公司 | 接地带组件 |
| US11549183B2 (en) * | 2019-05-24 | 2023-01-10 | Applied Materials, Inc. | Showerhead with inlet mixer |
| CN110289235B (zh) * | 2019-07-09 | 2021-07-09 | 北京北方华创微电子装备有限公司 | 开盖装置和半导体加工设备 |
| CN112447475B (zh) * | 2019-09-05 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种具有柔性电介质薄片的等离子体处理装置 |
| JP7401279B2 (ja) | 2019-12-06 | 2023-12-19 | 株式会社アドバンテック | 対象物を加熱及び冷却するためのステージ |
| JP7413099B2 (ja) * | 2020-03-16 | 2024-01-15 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| US11443921B2 (en) * | 2020-06-11 | 2022-09-13 | Applied Materials, Inc. | Radio frequency ground system and method |
| KR20220031849A (ko) * | 2020-09-04 | 2022-03-14 | 삼성디스플레이 주식회사 | 증착 장치 |
| CN114203506B (zh) * | 2020-09-18 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理装置及其方法 |
| CN114678247B (zh) * | 2020-12-24 | 2025-09-09 | 中微半导体设备(上海)股份有限公司 | 一种接地环及其调节方法及等离子体处理装置 |
| JP7458337B2 (ja) | 2021-02-09 | 2024-03-29 | 株式会社アドバンテック | 対象物を加熱及び冷却するためのステージ |
| JP7560214B2 (ja) * | 2021-03-11 | 2024-10-02 | 東京エレクトロン株式会社 | 着火方法及びプラズマ処理装置 |
| CN117355920A (zh) * | 2021-04-01 | 2024-01-05 | 应用材料公司 | 用于使用等离子体形成薄膜的接地返回 |
| US12378669B2 (en) | 2022-01-28 | 2025-08-05 | Applied Materials, Inc. | Ground return for thin film formation using plasma |
| TWI817606B (zh) * | 2022-07-13 | 2023-10-01 | 友威科技股份有限公司 | 雙電極連續式電漿製程系統 |
| USD1080812S1 (en) | 2022-08-29 | 2025-06-24 | Applied Materials, Inc. | Gas mixer |
| CN120824211A (zh) * | 2024-04-09 | 2025-10-21 | 中微半导体设备(广州)有限公司 | 半导体处理设备及其工作方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US602404A (en) * | 1898-04-12 | John mueller | ||
| JPH08306670A (ja) | 1995-05-09 | 1996-11-22 | Sony Corp | プラズマアッシング装置 |
| JPH1079350A (ja) * | 1996-09-04 | 1998-03-24 | Kokusai Electric Co Ltd | プラズマ処理装置 |
| US6024044A (en) | 1997-10-09 | 2000-02-15 | Applied Komatsu Technology, Inc. | Dual frequency excitation of plasma for film deposition |
| US6857387B1 (en) * | 2000-05-03 | 2005-02-22 | Applied Materials, Inc. | Multiple frequency plasma chamber with grounding capacitor at cathode |
| US6358376B1 (en) | 2000-07-10 | 2002-03-19 | Applied Materials, Inc. | Biased shield in a magnetron sputter reactor |
| AU2002344594B2 (en) * | 2002-10-29 | 2005-06-09 | Mitsubishi Heavy Industries, Ltd. | Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus |
| US7083702B2 (en) * | 2003-06-12 | 2006-08-01 | Applied Materials, Inc. | RF current return path for a large area substrate plasma reactor |
| US7534301B2 (en) * | 2004-09-21 | 2009-05-19 | Applied Materials, Inc. | RF grounding of cathode in process chamber |
| US7354288B2 (en) * | 2005-06-03 | 2008-04-08 | Applied Materials, Inc. | Substrate support with clamping electrical connector |
| US20070221128A1 (en) * | 2006-03-23 | 2007-09-27 | Soo Young Choi | Method and apparatus for improving uniformity of large-area substrates |
| US8004293B2 (en) * | 2006-11-20 | 2011-08-23 | Applied Materials, Inc. | Plasma processing chamber with ground member integrity indicator and method for using the same |
| US8381677B2 (en) * | 2006-12-20 | 2013-02-26 | Applied Materials, Inc. | Prevention of film deposition on PECVD process chamber wall |
| US20080179011A1 (en) * | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Plasma reactor with wide process window employing plural vhf sources |
| US8281739B2 (en) * | 2007-03-01 | 2012-10-09 | Applied Materials, Inc. | RF shutter |
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| US7964430B2 (en) * | 2007-05-23 | 2011-06-21 | Applied Materials, Inc. | Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications |
| US20080289686A1 (en) * | 2007-05-23 | 2008-11-27 | Tae Kyung Won | Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications |
| US20080302303A1 (en) * | 2007-06-07 | 2008-12-11 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
| US8142606B2 (en) * | 2007-06-07 | 2012-03-27 | Applied Materials, Inc. | Apparatus for depositing a uniform silicon film and methods for manufacturing the same |
| US20090107955A1 (en) * | 2007-10-26 | 2009-04-30 | Tiner Robin L | Offset liner for chamber evacuation |
| CN101978473B (zh) * | 2008-03-20 | 2015-11-25 | 应用材料公司 | 具有滚轧成型表面的基座和制造所述基座的方法 |
| JP5683469B2 (ja) * | 2008-10-09 | 2015-03-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 大型プラズマ処理チャンバのrf復路 |
| US9382621B2 (en) * | 2009-02-04 | 2016-07-05 | Applied Materials, Inc. | Ground return for plasma processes |
| KR102011535B1 (ko) * | 2011-11-24 | 2019-08-16 | 램 리써치 코포레이션 | 가요성 있는 대칭적 rf 복귀 스트랩을 갖는 플라즈마 프로세싱 챔버 |
-
2007
- 2007-07-10 US US11/775,359 patent/US7972470B2/en active Active
-
2008
- 2008-04-30 CN CN2010102514389A patent/CN101906621B/zh active Active
- 2008-04-30 CN CN2008100944949A patent/CN101298670B/zh active Active
- 2008-05-01 TW TW099112068A patent/TWI376763B/zh not_active IP Right Cessation
- 2008-05-01 TW TW097116076A patent/TWI377638B/zh not_active IP Right Cessation
- 2008-05-02 JP JP2008120346A patent/JP5427367B2/ja active Active
- 2008-05-06 KR KR1020080041957A patent/KR101011407B1/ko active Active
-
2010
- 2010-07-27 KR KR1020100072406A patent/KR101274659B1/ko active Active
-
2011
- 2011-06-06 US US13/153,641 patent/US8877301B2/en active Active
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