JP2008269751A - 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 - Google Patents
半導体記憶装置及び当該半導体記憶装置を具備する電子機器 Download PDFInfo
- Publication number
- JP2008269751A JP2008269751A JP2007115087A JP2007115087A JP2008269751A JP 2008269751 A JP2008269751 A JP 2008269751A JP 2007115087 A JP2007115087 A JP 2007115087A JP 2007115087 A JP2007115087 A JP 2007115087A JP 2008269751 A JP2008269751 A JP 2008269751A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- read
- power supply
- memory cell
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 228
- 230000015654 memory Effects 0.000 claims abstract description 237
- 238000003860 storage Methods 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 description 275
- 239000000758 substrate Substances 0.000 description 115
- 239000010410 layer Substances 0.000 description 89
- 238000010586 diagram Methods 0.000 description 54
- 238000000034 method Methods 0.000 description 48
- 230000006870 function Effects 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 239000003990 capacitor Substances 0.000 description 32
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 28
- 239000002585 base Substances 0.000 description 25
- 150000002500 ions Chemical class 0.000 description 24
- 239000012535 impurity Substances 0.000 description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 21
- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 239000010936 titanium Substances 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 230000005540 biological transmission Effects 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 238000004891 communication Methods 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000002356 single layer Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 230000000717 retained effect Effects 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 6
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- -1 oxygen radicals Chemical class 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000012943 hotmelt Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
Landscapes
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007115087A JP2008269751A (ja) | 2007-04-25 | 2007-04-25 | 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007115087A JP2008269751A (ja) | 2007-04-25 | 2007-04-25 | 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008269751A true JP2008269751A (ja) | 2008-11-06 |
| JP2008269751A5 JP2008269751A5 (enrdf_load_stackoverflow) | 2010-03-18 |
Family
ID=40049047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007115087A Withdrawn JP2008269751A (ja) | 2007-04-25 | 2007-04-25 | 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008269751A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011135999A1 (en) * | 2010-04-27 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| JP2012516058A (ja) * | 2009-01-22 | 2012-07-12 | クアルコム，インコーポレイテッド | デュアル技術トランジスタを用いた低リーク高性能スタティックランダムアクセスメモリセル |
| WO2012102281A1 (en) * | 2011-01-28 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2012169142A1 (en) * | 2011-06-09 | 2012-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Cache memory and method for driving the same |
| GB2500907A (en) * | 2012-04-04 | 2013-10-09 | Silicon Basis Ltd | SRAM having separate storage cells and read-write circuit |
| US8953354B2 (en) | 2011-06-09 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method of driving semiconductor memory device |
| JP2016106419A (ja) * | 2009-10-29 | 2016-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5699A (en) * | 1979-06-14 | 1981-01-06 | Mitsubishi Electric Corp | Semiconductor memory unit |
| JPH01204292A (ja) * | 1988-02-08 | 1989-08-16 | Fujitsu Ltd | 半導体記憶装置 |
| JPH03134893A (ja) * | 1989-10-20 | 1991-06-07 | Fujitsu Ltd | 半導体記憶装置 |
| JPH0562474A (ja) * | 1991-08-29 | 1993-03-12 | Nec Corp | 半導体メモリ装置 |
| JPH0869693A (ja) * | 1994-08-30 | 1996-03-12 | Mitsubishi Electric Corp | スタティック型半導体記憶装置 |
| JPH11261017A (ja) * | 1998-03-16 | 1999-09-24 | Fujitsu Ltd | 半導体記憶装置 |
| JP2001202775A (ja) * | 2000-01-19 | 2001-07-27 | Ind Technol Res Inst | 再書き込み擬似ｓｒａｍ及びその再書き込み方法 |
| JP2003288785A (ja) * | 2002-03-28 | 2003-10-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP2004241473A (ja) * | 2003-02-04 | 2004-08-26 | Renesas Technology Corp | 半導体記憶装置 |
| JP2005038557A (ja) * | 2003-07-18 | 2005-02-10 | Semiconductor Energy Lab Co Ltd | メモリ回路およびメモリ回路を有する表示装置 |
| JP2005122873A (ja) * | 2003-10-17 | 2005-05-12 | Samsung Sdi Co Ltd | 半導体記憶装置およびフラットパネル表示装置 |
| JP2006018935A (ja) * | 2004-07-02 | 2006-01-19 | Renesas Technology Corp | 半導体記憶装置 |
| JP2006059523A (ja) * | 2004-08-23 | 2006-03-02 | Seiko Epson Corp | メモリーセル |
-
2007
- 2007-04-25 JP JP2007115087A patent/JP2008269751A/ja not_active Withdrawn
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5699A (en) * | 1979-06-14 | 1981-01-06 | Mitsubishi Electric Corp | Semiconductor memory unit |
| JPH01204292A (ja) * | 1988-02-08 | 1989-08-16 | Fujitsu Ltd | 半導体記憶装置 |
| JPH03134893A (ja) * | 1989-10-20 | 1991-06-07 | Fujitsu Ltd | 半導体記憶装置 |
| JPH0562474A (ja) * | 1991-08-29 | 1993-03-12 | Nec Corp | 半導体メモリ装置 |
| JPH0869693A (ja) * | 1994-08-30 | 1996-03-12 | Mitsubishi Electric Corp | スタティック型半導体記憶装置 |
| JPH11261017A (ja) * | 1998-03-16 | 1999-09-24 | Fujitsu Ltd | 半導体記憶装置 |
| JP2001202775A (ja) * | 2000-01-19 | 2001-07-27 | Ind Technol Res Inst | 再書き込み擬似ｓｒａｍ及びその再書き込み方法 |
| JP2003288785A (ja) * | 2002-03-28 | 2003-10-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP2004241473A (ja) * | 2003-02-04 | 2004-08-26 | Renesas Technology Corp | 半導体記憶装置 |
| JP2005038557A (ja) * | 2003-07-18 | 2005-02-10 | Semiconductor Energy Lab Co Ltd | メモリ回路およびメモリ回路を有する表示装置 |
| JP2005122873A (ja) * | 2003-10-17 | 2005-05-12 | Samsung Sdi Co Ltd | 半導体記憶装置およびフラットパネル表示装置 |
| JP2006018935A (ja) * | 2004-07-02 | 2006-01-19 | Renesas Technology Corp | 半導体記憶装置 |
| JP2006059523A (ja) * | 2004-08-23 | 2006-03-02 | Seiko Epson Corp | メモリーセル |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012516058A (ja) * | 2009-01-22 | 2012-07-12 | クアルコム，インコーポレイテッド | デュアル技術トランジスタを用いた低リーク高性能スタティックランダムアクセスメモリセル |
| US8576612B2 (en) | 2009-01-22 | 2013-11-05 | Qualcomm Incorporated | Low leakage high performance static random access memory cell using dual-technology transistors |
| US10720433B2 (en) | 2009-10-29 | 2020-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9806079B2 (en) | 2009-10-29 | 2017-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2016106419A (ja) * | 2009-10-29 | 2016-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2011249782A (ja) * | 2010-04-27 | 2011-12-08 | Semiconductor Energy Lab Co Ltd | 半導体メモリ装置 |
| US8605477B2 (en) | 2010-04-27 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| WO2011135999A1 (en) * | 2010-04-27 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US8937304B2 (en) | 2011-01-28 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2012102281A1 (en) * | 2011-01-28 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9490267B2 (en) | 2011-01-28 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8908406B2 (en) | 2011-06-09 | 2014-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Cache memory and method for driving the same |
| US8953354B2 (en) | 2011-06-09 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method of driving semiconductor memory device |
| CN103597545A (zh) * | 2011-06-09 | 2014-02-19 | 株式会社半导体能源研究所 | 高速缓冲存储器及其驱动方法 |
| CN103597545B (zh) * | 2011-06-09 | 2016-10-19 | 株式会社半导体能源研究所 | 高速缓冲存储器及其驱动方法 |
| JP2013016157A (ja) * | 2011-06-09 | 2013-01-24 | Semiconductor Energy Lab Co Ltd | キャッシュメモリ、及びキャッシュメモリの駆動方法 |
| KR101933741B1 (ko) | 2011-06-09 | 2018-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 캐시 메모리 및 캐시 메모리의 구동 방법 |
| WO2012169142A1 (en) * | 2011-06-09 | 2012-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Cache memory and method for driving the same |
| GB2500907B (en) * | 2012-04-04 | 2016-05-25 | Platipus Ltd | Static random access memory devices |
| GB2500907A (en) * | 2012-04-04 | 2013-10-09 | Silicon Basis Ltd | SRAM having separate storage cells and read-write circuit |
| US10482950B2 (en) | 2012-04-04 | 2019-11-19 | Platipus Limited | Static random access memory devices including a plurality of storage cells and a read/write circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI423392B (zh) | 半導體裝置和電子裝置 | |
| JP5703358B2 (ja) | 半導体装置の作製方法 | |
| CN101047190B (zh) | 非易失性半导体存储器件及其制造方法 | |
| JP5415001B2 (ja) | 半導体装置 | |
| JP5337380B2 (ja) | 半導体装置及びその作製方法 | |
| US7851277B2 (en) | Semiconductor device and method of manufacturing same | |
| US20070180285A1 (en) | Semiconductor device | |
| JP5461788B2 (ja) | 半導体装置及びその作製方法 | |
| JP2008269751A (ja) | 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 | |
| KR20070068294A (ko) | 반도체 디바이스 및 그 제조 방법 | |
| JP5337347B2 (ja) | 半導体装置、半導体装置の作製方法 | |
| JP5063097B2 (ja) | 半導体装置およびその作製方法 | |
| JP5337346B2 (ja) | 半導体装置の作製方法 | |
| JP5183910B2 (ja) | 半導体素子の作製方法 | |
| JP5674747B2 (ja) | 半導体装置 | |
| JP5288589B2 (ja) | 無線通信方法 | |
| JP4749102B2 (ja) | 半導体装置の作製方法 | |
| JP5105915B2 (ja) | 半導体装置及びその作製方法 | |
| JP5121217B2 (ja) | 半導体装置の作製方法 | |
| JP2008034083A (ja) | 半導体装置及び電子機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100201 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100201 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120319 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120403 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20120430 |