JP2008269751A5 - - Google Patents
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- Publication number
- JP2008269751A5 JP2008269751A5 JP2007115087A JP2007115087A JP2008269751A5 JP 2008269751 A5 JP2008269751 A5 JP 2008269751A5 JP 2007115087 A JP2007115087 A JP 2007115087A JP 2007115087 A JP2007115087 A JP 2007115087A JP 2008269751 A5 JP2008269751 A5 JP 2008269751A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- electrically connected
- terminal
- line
- inverter circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007115087A JP2008269751A (ja) | 2007-04-25 | 2007-04-25 | 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007115087A JP2008269751A (ja) | 2007-04-25 | 2007-04-25 | 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008269751A JP2008269751A (ja) | 2008-11-06 |
| JP2008269751A5 true JP2008269751A5 (enrdf_load_stackoverflow) | 2010-03-18 |
Family
ID=40049047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007115087A Withdrawn JP2008269751A (ja) | 2007-04-25 | 2007-04-25 | 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2008269751A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7961499B2 (en) | 2009-01-22 | 2011-06-14 | Qualcomm Incorporated | Low leakage high performance static random access memory cell using dual-technology transistors |
| SG10201406934WA (en) * | 2009-10-29 | 2014-11-27 | Semiconductor Energy Lab | Semiconductor device |
| WO2011135999A1 (en) * | 2010-04-27 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| WO2012102281A1 (en) * | 2011-01-28 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN103597545B (zh) * | 2011-06-09 | 2016-10-19 | 株式会社半导体能源研究所 | 高速缓冲存储器及其驱动方法 |
| JP6012263B2 (ja) | 2011-06-09 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
| GB2500907B (en) | 2012-04-04 | 2016-05-25 | Platipus Ltd | Static random access memory devices |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5699A (en) * | 1979-06-14 | 1981-01-06 | Mitsubishi Electric Corp | Semiconductor memory unit |
| JP2618422B2 (ja) * | 1988-02-08 | 1997-06-11 | 富士通株式会社 | 半導体記憶装置 |
| JPH03134893A (ja) * | 1989-10-20 | 1991-06-07 | Fujitsu Ltd | 半導体記憶装置 |
| JPH0562474A (ja) * | 1991-08-29 | 1993-03-12 | Nec Corp | 半導体メモリ装置 |
| JPH0869693A (ja) * | 1994-08-30 | 1996-03-12 | Mitsubishi Electric Corp | スタティック型半導体記憶装置 |
| JPH11261017A (ja) * | 1998-03-16 | 1999-09-24 | Fujitsu Ltd | 半導体記憶装置 |
| JP2001202775A (ja) * | 2000-01-19 | 2001-07-27 | Ind Technol Res Inst | 再書き込み擬似ｓｒａｍ及びその再書き込み方法 |
| JP4294256B2 (ja) * | 2002-03-28 | 2009-07-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| JP2004241473A (ja) * | 2003-02-04 | 2004-08-26 | Renesas Technology Corp | 半導体記憶装置 |
| JP4373154B2 (ja) * | 2003-07-18 | 2009-11-25 | 株式会社半導体エネルギー研究所 | メモリ回路およびそのメモリ回路を有する表示装置、電子機器 |
| KR100551028B1 (ko) * | 2003-10-17 | 2006-02-13 | 삼성에스디아이 주식회사 | 반도체 기억 장치 및 이를 이용한 평판 표시 장치 |
| JP2006018935A (ja) * | 2004-07-02 | 2006-01-19 | Renesas Technology Corp | 半導体記憶装置 |
| GB2417588B (en) * | 2004-08-23 | 2008-06-04 | Seiko Epson Corp | Memory cell |
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2007
- 2007-04-25 JP JP2007115087A patent/JP2008269751A/ja not_active Withdrawn