JP2008254982A - 単結晶育成装置 - Google Patents
単結晶育成装置 Download PDFInfo
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- JP2008254982A JP2008254982A JP2007100911A JP2007100911A JP2008254982A JP 2008254982 A JP2008254982 A JP 2008254982A JP 2007100911 A JP2007100911 A JP 2007100911A JP 2007100911 A JP2007100911 A JP 2007100911A JP 2008254982 A JP2008254982 A JP 2008254982A
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- flow rate
- single crystal
- cooling body
- cooling
- flow meter
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- 239000013078 crystal Substances 0.000 title claims abstract description 65
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 81
- 238000001816 cooling Methods 0.000 claims abstract description 77
- 239000000498 cooling water Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000002994 raw material Substances 0.000 claims description 6
- 239000000155 melt Substances 0.000 description 10
- 238000012544 monitoring process Methods 0.000 description 8
- 239000008710 crystal-8 Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000004880 explosion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】単結晶を包囲し、内部に冷却水を流通する冷却体10において、第1流量計17により冷却体10への冷却水の流入流量L1を検出し、第2流量計18により冷却体10からの冷却水の流出流量L2を検出し、圧力計12により炉体内の圧力Pを検出する。流入流量L1及び流出流量L2より流量差ΔLを算出し、圧力Pより圧力変動ΔPを算出する。流量差ΔLと圧力変動ΔPがほぼ同時に閾値ΔLB、ΔPBを超えた場合、漏水と判断する。
【選択図】図3
Description
2 プルチャンバ
3 ルツボ
4 ヒータ
5 保温筒
6 融液
7 ワイヤ
8 単結晶
9 熱遮蔽体
10 冷却体
11 真空排気管
12 圧力計
13 支持アーム
14 給水管
15 排水管
16 分岐管
17 第1流量計
18 第2流量計
19 第1開閉弁
20 第2開閉弁
21 第3開閉弁
22 制御部
Claims (3)
- チョクラルスキー法によって炉体内で原料融液から単結晶を育成する単結晶育成装置において、
前記炉体内で原料融液から育成されている単結晶を包囲し、内部を流通する冷却水により冷却されて前記単結晶を冷却する冷却体と、
この冷却体に流入する前記冷却水の流量を検出する流入側流量計と、
前記冷却体から流出する前記冷却水の流量を検出する流出側流量計と、
前記炉体内の圧力を検出する圧力計と、
前記流入側流量計及び前記流出側流量計の検出値より両者の流量差を算出するとともに、前記圧力計の検出値より単位時間当たりの圧力変動を算出し、前記流量差及び前記圧力変動に基づいて前記冷却水の漏水の有無を判定する制御部と、を含むことを特徴とする単結晶育成装置。 - 前記制御部は、所定期間内で、前記流量差及び前記圧力変動が予め設定された閾値を超えたとき、漏水有りと判定することを特徴とする請求項1に記載の単結晶育成装置。
- 前記冷却体への前記冷却水の流入口に接続され、経路中に前記流入側流量計が設けられた給水管と、
前記冷却体からの前記冷却水の流出口に接続され、経路中に前記流出側流量計が設けられた排水管と、
前記排水管から分岐して外部に開放された分岐管と、
前記給水管の経路を開閉する給水管用弁と、
前記排水管の経路を前記分岐管への分岐点よりも下流側で開閉する排水管用弁と、
前記分岐管の経路を開閉する分岐管用弁と、を含み、
前記制御部は、漏水有りと判定した場合、前記給水管用弁及び前記排水管用弁を開状態から閉状態に切り替えるとともに、前記分岐管用弁を閉状態から開状態に切り替えることを特徴とする請求項1または請求項2に記載の単結晶育成装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007100911A JP4983354B2 (ja) | 2007-04-06 | 2007-04-06 | 単結晶育成装置 |
TW97109661A TWI444510B (zh) | 2007-04-06 | 2008-03-19 | Single crystal breeding device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007100911A JP4983354B2 (ja) | 2007-04-06 | 2007-04-06 | 単結晶育成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008254982A true JP2008254982A (ja) | 2008-10-23 |
JP4983354B2 JP4983354B2 (ja) | 2012-07-25 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007100911A Active JP4983354B2 (ja) | 2007-04-06 | 2007-04-06 | 単結晶育成装置 |
Country Status (2)
Country | Link |
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JP (1) | JP4983354B2 (ja) |
TW (1) | TWI444510B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010150070A (ja) * | 2008-12-25 | 2010-07-08 | Shin Etsu Handotai Co Ltd | 単結晶製造装置及び単結晶製造方法 |
KR20120015900A (ko) * | 2010-08-13 | 2012-02-22 | 주식회사 엘지화학 | 차량용 이차전지 배터리팩의 냉각장치 |
CN105442037A (zh) * | 2015-12-08 | 2016-03-30 | 西安交通大学 | 一种高速单晶生长装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10281914A (ja) * | 1997-04-02 | 1998-10-23 | Nippon Steel Corp | 冷却水の漏水検出方法 |
JP2001240492A (ja) * | 2000-02-29 | 2001-09-04 | Komatsu Electronic Metals Co Ltd | リチャージ・追いチャージを円滑に行うcz法単結晶引上げ装置 |
JP2002104895A (ja) * | 2000-09-26 | 2002-04-10 | Sumitomo Metal Ind Ltd | 結晶成長装置 |
-
2007
- 2007-04-06 JP JP2007100911A patent/JP4983354B2/ja active Active
-
2008
- 2008-03-19 TW TW97109661A patent/TWI444510B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10281914A (ja) * | 1997-04-02 | 1998-10-23 | Nippon Steel Corp | 冷却水の漏水検出方法 |
JP2001240492A (ja) * | 2000-02-29 | 2001-09-04 | Komatsu Electronic Metals Co Ltd | リチャージ・追いチャージを円滑に行うcz法単結晶引上げ装置 |
JP2002104895A (ja) * | 2000-09-26 | 2002-04-10 | Sumitomo Metal Ind Ltd | 結晶成長装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010150070A (ja) * | 2008-12-25 | 2010-07-08 | Shin Etsu Handotai Co Ltd | 単結晶製造装置及び単結晶製造方法 |
KR20120015900A (ko) * | 2010-08-13 | 2012-02-22 | 주식회사 엘지화학 | 차량용 이차전지 배터리팩의 냉각장치 |
KR101583679B1 (ko) | 2010-08-13 | 2016-01-08 | 주식회사 엘지화학 | 차량용 이차전지 배터리팩의 냉각장치 |
CN105442037A (zh) * | 2015-12-08 | 2016-03-30 | 西安交通大学 | 一种高速单晶生长装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200844270A (en) | 2008-11-16 |
TWI444510B (zh) | 2014-07-11 |
JP4983354B2 (ja) | 2012-07-25 |
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