JP2008244019A5 - - Google Patents

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Publication number
JP2008244019A5
JP2008244019A5 JP2007080313A JP2007080313A JP2008244019A5 JP 2008244019 A5 JP2008244019 A5 JP 2008244019A5 JP 2007080313 A JP2007080313 A JP 2007080313A JP 2007080313 A JP2007080313 A JP 2007080313A JP 2008244019 A5 JP2008244019 A5 JP 2008244019A5
Authority
JP
Japan
Prior art keywords
wafer
film
soi
manufacturing
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007080313A
Other languages
English (en)
Japanese (ja)
Other versions
JP5194508B2 (ja
JP2008244019A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007080313A priority Critical patent/JP5194508B2/ja
Priority claimed from JP2007080313A external-priority patent/JP5194508B2/ja
Priority to PCT/JP2008/000339 priority patent/WO2008117509A1/ja
Publication of JP2008244019A publication Critical patent/JP2008244019A/ja
Publication of JP2008244019A5 publication Critical patent/JP2008244019A5/ja
Application granted granted Critical
Publication of JP5194508B2 publication Critical patent/JP5194508B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007080313A 2007-03-26 2007-03-26 Ｓｏｉウエーハの製造方法 Active JP5194508B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007080313A JP5194508B2 (ja) 2007-03-26 2007-03-26 Ｓｏｉウエーハの製造方法
PCT/JP2008/000339 WO2008117509A1 (ja) 2007-03-26 2008-02-26 Ｓｏｉウエーハの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007080313A JP5194508B2 (ja) 2007-03-26 2007-03-26 Ｓｏｉウエーハの製造方法

Publications (3)

Publication Number Publication Date
JP2008244019A JP2008244019A (ja) 2008-10-09
JP2008244019A5 true JP2008244019A5 (enrdf_load_stackoverflow) 2009-10-22
JP5194508B2 JP5194508B2 (ja) 2013-05-08

Family

ID=39788251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007080313A Active JP5194508B2 (ja) 2007-03-26 2007-03-26 Ｓｏｉウエーハの製造方法

Country Status (2)

Country Link
JP (1) JP5194508B2 (enrdf_load_stackoverflow)
WO (1) WO2008117509A1 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5643488B2 (ja) * 2009-04-28 2014-12-17 信越化学工業株式会社 低応力膜を備えたｓｏｉウェーハの製造方法
JP2011071193A (ja) * 2009-09-24 2011-04-07 Sumco Corp 貼合せｓｏｉウェーハ及びその製造方法
GB2484506A (en) * 2010-10-13 2012-04-18 Univ Warwick Heterogrowth
JP5978764B2 (ja) * 2012-05-24 2016-08-24 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP6186984B2 (ja) 2013-07-25 2017-08-30 三菱電機株式会社 半導体装置の製造方法
JP7334698B2 (ja) * 2020-09-11 2023-08-29 信越半導体株式会社 Ｓｏｉウェーハの製造方法及びｓｏｉウェーハ
JP7380517B2 (ja) * 2020-10-21 2023-11-15 信越半導体株式会社 Ｓｏｉウェーハの製造方法及びｓｏｉウェーハ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186612A (ja) * 1988-01-14 1989-07-26 Fujitsu Ltd 半導体基板の製造方法
JP3237888B2 (ja) * 1992-01-31 2001-12-10 キヤノン株式会社 半導体基体及びその作製方法
JPH0837286A (ja) * 1994-07-21 1996-02-06 Toshiba Microelectron Corp 半導体基板および半導体基板の製造方法
JPH098124A (ja) * 1995-06-15 1997-01-10 Nippondenso Co Ltd 絶縁分離基板及びその製造方法
KR970052024A (ko) * 1995-12-30 1997-07-29 김주용 에스 오 아이 기판 제조방법
JPH10116897A (ja) * 1996-10-09 1998-05-06 Mitsubishi Materials Shilicon Corp 張り合わせ基板およびその製造方法
JP3395661B2 (ja) * 1998-07-07 2003-04-14 信越半導体株式会社 Ｓｏｉウエーハの製造方法
WO2005022610A1 (ja) * 2003-09-01 2005-03-10 Sumco Corporation 貼り合わせウェーハの製造方法
JP2007059704A (ja) * 2005-08-25 2007-03-08 Sumco Corp 貼合せ基板の製造方法及び貼合せ基板

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