JP2008228304A5 - - Google Patents
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- Publication number
- JP2008228304A5 JP2008228304A5 JP2008059620A JP2008059620A JP2008228304A5 JP 2008228304 A5 JP2008228304 A5 JP 2008228304A5 JP 2008059620 A JP2008059620 A JP 2008059620A JP 2008059620 A JP2008059620 A JP 2008059620A JP 2008228304 A5 JP2008228304 A5 JP 2008228304A5
- Authority
- JP
- Japan
- Prior art keywords
- amplification device
- amplifying
- amplification
- bypass capacitor
- switching elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP07004878A EP1968188B1 (de) | 2007-03-09 | 2007-03-09 | Klasse-D Verstärkeranordnung |
| EP07004878.0 | 2007-03-09 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008228304A JP2008228304A (ja) | 2008-09-25 |
| JP2008228304A5 true JP2008228304A5 (https=) | 2011-04-28 |
| JP5675033B2 JP5675033B2 (ja) | 2015-02-25 |
Family
ID=38123951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008059620A Active JP5675033B2 (ja) | 2007-03-09 | 2008-03-10 | D級増幅装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7705676B2 (https=) |
| EP (1) | EP1968188B1 (https=) |
| JP (1) | JP5675033B2 (https=) |
Families Citing this family (40)
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| DE102011087106B4 (de) * | 2011-11-25 | 2017-10-19 | TRUMPF Hüttinger GmbH + Co. KG | Hochfrequenz-Klasse-D-MOSFET-Verstärkermodul |
| US9279722B2 (en) | 2012-04-30 | 2016-03-08 | Agilent Technologies, Inc. | Optical emission system including dichroic beam combiner |
| EP2667409A1 (en) * | 2012-05-21 | 2013-11-27 | Nxp B.V. | Amplifier circuit with a low inductance bond wire arrangement |
| JP5578745B1 (ja) | 2013-08-22 | 2014-08-27 | 株式会社京三製作所 | D級増幅器 |
| DE102013226273B4 (de) * | 2013-12-17 | 2018-10-31 | Siemens Healthcare Gmbh | Leistungsverstärkereinrichtung für eine Magnetresonanzeinrichtung und Magnetresonanzeinrichtung |
| US20170170821A1 (en) * | 2015-12-11 | 2017-06-15 | Freebird Semiconductor Corporation | Voltage detection circuit |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10264663B1 (en) | 2017-10-18 | 2019-04-16 | Lam Research Corporation | Matchless plasma source for semiconductor wafer fabrication |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US10515781B1 (en) * | 2018-06-13 | 2019-12-24 | Lam Research Corporation | Direct drive RF circuit for substrate processing systems |
| WO2020036803A1 (en) * | 2018-08-17 | 2020-02-20 | Lam Research Corporation | Direct frequency tuning for matchless plasma source in substrate processing systems |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| JP6772355B1 (ja) | 2019-10-15 | 2020-10-21 | 株式会社京三製作所 | スイッチングモジュール |
| US12212287B1 (en) * | 2020-05-15 | 2025-01-28 | AmpliTech, Inc. | Low noise amplifiers/front-ends optimized for use in 5G networks |
| US12224714B1 (en) | 2020-05-15 | 2025-02-11 | AmpliTech, Inc. | Multiple transistor low noise amplifier optimized for cryogenic temperatures |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| DE202021100710U1 (de) * | 2021-02-12 | 2021-02-19 | TRUMPF Hüttinger GmbH + Co. KG | Leistungsversorgungseinrichtung und Plasmasystem |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12525433B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US12525441B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12586768B2 (en) | 2022-08-10 | 2026-03-24 | Applied Materials, Inc. | Pulsed voltage compensation for plasma processing applications |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| EP4645365A1 (en) * | 2024-05-02 | 2025-11-05 | TRUMPF Huettinger Sp. Z o. o. | Integrated power module, plasma supply unit, and plasma process |
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| DE102005036116B4 (de) * | 2005-08-01 | 2012-03-22 | Infineon Technologies Ag | Leistungshalbleitermodul |
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-
2007
- 2007-03-09 EP EP07004878A patent/EP1968188B1/de active Active
-
2008
- 2008-03-07 US US12/044,572 patent/US7705676B2/en active Active
- 2008-03-10 JP JP2008059620A patent/JP5675033B2/ja active Active
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