JP2006501678A5 - - Google Patents

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Publication number
JP2006501678A5
JP2006501678A5 JP2004541592A JP2004541592A JP2006501678A5 JP 2006501678 A5 JP2006501678 A5 JP 2006501678A5 JP 2004541592 A JP2004541592 A JP 2004541592A JP 2004541592 A JP2004541592 A JP 2004541592A JP 2006501678 A5 JP2006501678 A5 JP 2006501678A5
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JP
Japan
Prior art keywords
transistor
power device
package
individual capacitor
wire bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004541592A
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English (en)
Japanese (ja)
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JP5009500B2 (ja
JP2006501678A (ja
Filing date
Publication date
Priority claimed from US10/262,217 external-priority patent/US6822321B2/en
Application filed filed Critical
Publication of JP2006501678A publication Critical patent/JP2006501678A/ja
Publication of JP2006501678A5 publication Critical patent/JP2006501678A5/ja
Application granted granted Critical
Publication of JP5009500B2 publication Critical patent/JP5009500B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2004541592A 2002-09-30 2003-09-17 Ｒｆパワーデバイス及びｒｆパワートランジスタデバイスにおける直線性を改善する方法 Expired - Lifetime JP5009500B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/262,217 US6822321B2 (en) 2002-09-30 2002-09-30 Packaged RF power transistor having RF bypassing/output matching network
US10/262,217 2002-09-30
PCT/US2003/029719 WO2004032188A2 (en) 2002-09-30 2003-09-17 Packaged rf power transistor having rf bypassing/output matching network

Publications (3)

Publication Number Publication Date
JP2006501678A JP2006501678A (ja) 2006-01-12
JP2006501678A5 true JP2006501678A5 (https=) 2006-11-02
JP5009500B2 JP5009500B2 (ja) 2012-08-22

Family

ID=32030167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004541592A Expired - Lifetime JP5009500B2 (ja) 2002-09-30 2003-09-17 Ｒｆパワーデバイス及びｒｆパワートランジスタデバイスにおける直線性を改善する方法

Country Status (7)

Country Link
US (1) US6822321B2 (https=)
EP (1) EP1547394B1 (https=)
JP (1) JP5009500B2 (https=)
CN (1) CN1701613B (https=)
AU (1) AU2003275086A1 (https=)
TW (1) TWI318455B (https=)
WO (1) WO2004032188A2 (https=)

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US7372334B2 (en) * 2005-07-26 2008-05-13 Infineon Technologies Ag Output match transistor
US7564303B2 (en) * 2005-07-26 2009-07-21 Infineon Technologies Ag Semiconductor power device and RF signal amplifier
US7378920B2 (en) * 2006-02-14 2008-05-27 Freescale Semiconductor, Inc. Methods and apparatus for a high-frequency output match circuit
US7898338B2 (en) 2006-04-26 2011-03-01 Nxp B.V. High power integrated RF amplifier
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US8076994B2 (en) * 2007-06-22 2011-12-13 Cree, Inc. RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction
US8330265B2 (en) * 2007-06-22 2012-12-11 Cree, Inc. RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks
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WO2009130544A1 (en) * 2008-04-22 2009-10-29 Freescale Semiconductor, Inc. Wireless communication unit and semiconductor device having a power amplifier therefor
US7948312B2 (en) * 2009-05-13 2011-05-24 Qualcomm, Incorporated Multi-bit class-D power amplifier system
US8536950B2 (en) * 2009-08-03 2013-09-17 Qualcomm Incorporated Multi-stage impedance matching
US8102205B2 (en) 2009-08-04 2012-01-24 Qualcomm, Incorporated Amplifier module with multiple operating modes
US8659359B2 (en) 2010-04-22 2014-02-25 Freescale Semiconductor, Inc. RF power transistor circuit
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USD680545S1 (en) * 2011-11-15 2013-04-23 Connectblue Ab Module
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USD689053S1 (en) * 2011-11-15 2013-09-03 Connectblue Ab Module
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EP2802075B1 (en) 2013-05-07 2017-02-15 Ampleon Netherlands B.V. Dual-band semiconductor RF amplifier device
EP2830089B1 (en) * 2013-07-25 2017-07-12 Ampleon Netherlands B.V. RF power device
EP3066683B1 (en) 2013-11-07 2019-04-24 NXP USA, Inc. Bond wire arrangement with adjustable losses
JP6478253B2 (ja) * 2014-03-21 2019-03-06 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． 電力増幅回路およびトランスミッタ
US9641163B2 (en) 2014-05-28 2017-05-02 Cree, Inc. Bandwidth limiting methods for GaN power transistors
US9515011B2 (en) 2014-05-28 2016-12-06 Cree, Inc. Over-mold plastic packaged wide band-gap power transistors and MMICS
US9472480B2 (en) 2014-05-28 2016-10-18 Cree, Inc. Over-mold packaging for wide band-gap semiconductor devices
US9438184B2 (en) 2014-06-27 2016-09-06 Freescale Semiconductor, Inc. Integrated passive device assemblies for RF amplifiers, and methods of manufacture thereof
CN105322895B (zh) * 2015-05-06 2018-11-09 苏州能讯高能半导体有限公司 一种偏置自适应内匹配功放管及基于该功放管的功放模块
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
US9692363B2 (en) * 2015-10-21 2017-06-27 Nxp Usa, Inc. RF power transistors with video bandwidth circuits, and methods of manufacture thereof
US9571044B1 (en) 2015-10-21 2017-02-14 Nxp Usa, Inc. RF power transistors with impedance matching circuits, and methods of manufacture thereof
CN106206524B (zh) * 2016-07-07 2019-01-22 昆山华太电子技术有限公司 一种封装管壳体
US10270402B1 (en) * 2017-11-30 2019-04-23 Nxp Usa, Inc. Broadband input matching and video bandwidth circuits for power amplifiers
US10673386B2 (en) * 2017-12-05 2020-06-02 Nxp Usa, Inc. Wideband power amplifiers with harmonic traps
US10566938B1 (en) * 2018-12-11 2020-02-18 Nxp Usa, Inc. System and method for providing isolation of bias signal from RF signal in integrated circuit
CN111510085B (zh) * 2020-05-12 2023-06-23 苏州远创达科技有限公司 一种功率放大器的输出电路
US12417966B2 (en) * 2021-12-17 2025-09-16 Macom Technology Solutions Holdings, Inc. IPD components having SiC substrates and devices and processes implementing the same
US12183669B2 (en) 2021-12-17 2024-12-31 Macom Technology Solutions Holdings, Inc. Configurable metal—insulator—metal capacitor and devices
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