JP2008187169A - シアン−タイプとイエロータイプのカラー特性を有するピクセルを含むカラーイメージセンサ - Google Patents

シアン−タイプとイエロータイプのカラー特性を有するピクセルを含むカラーイメージセンサ Download PDF

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Publication number
JP2008187169A
JP2008187169A JP2007332350A JP2007332350A JP2008187169A JP 2008187169 A JP2008187169 A JP 2008187169A JP 2007332350 A JP2007332350 A JP 2007332350A JP 2007332350 A JP2007332350 A JP 2007332350A JP 2008187169 A JP2008187169 A JP 2008187169A
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Prior art keywords
type
pixel
image sensor
pixels
white
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Pending
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JP2007332350A
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English (en)
Japanese (ja)
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JP2008187169A5 (enExample
Inventor
Tetsuro Asaba
哲朗 浅羽
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2008187169A publication Critical patent/JP2008187169A/ja
Publication of JP2008187169A5 publication Critical patent/JP2008187169A5/ja
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    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
    • E04F21/00—Implements for finishing work on buildings
    • E04F21/165—Implements for finishing work on buildings for finishing joints, e.g. implements for raking or filling joints, jointers
    • E04F21/1655—Implements for finishing work on buildings for finishing joints, e.g. implements for raking or filling joints, jointers for finishing corner joints
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045—Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045—Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter
    • H04N2209/046—Colour interpolation to calculate the missing colour values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2007332350A 2007-01-30 2007-12-25 シアン−タイプとイエロータイプのカラー特性を有するピクセルを含むカラーイメージセンサ Pending JP2008187169A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070009202A KR100929349B1 (ko) 2007-01-30 2007-01-30 유기물 컬러 필터를 포함하지 않는 컬러 픽셀, 이미지 센서, 및 컬러 보간방법

Publications (2)

Publication Number Publication Date
JP2008187169A true JP2008187169A (ja) 2008-08-14
JP2008187169A5 JP2008187169A5 (enExample) 2011-02-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007332350A Pending JP2008187169A (ja) 2007-01-30 2007-12-25 シアン−タイプとイエロータイプのカラー特性を有するピクセルを含むカラーイメージセンサ

Country Status (5)

Country Link
US (1) US7679112B2 (enExample)
JP (1) JP2008187169A (enExample)
KR (1) KR100929349B1 (enExample)
CN (1) CN101236981B (enExample)
TW (1) TW200834899A (enExample)

Cited By (1)

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US9142580B2 (en) 2012-08-10 2015-09-22 Canon Kabushiki Kaisha Image pickup apparatus and image pickup system

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KR101534547B1 (ko) * 2008-11-24 2015-07-08 삼성전자주식회사 이미지 센서 및 이를 포함하는 시스템
JP2014187648A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 固体撮像装置
KR102219199B1 (ko) 2014-04-29 2021-02-23 삼성전자주식회사 이미지 센서의 픽셀 어레이 및 이미지 센서
US10488264B2 (en) 2014-09-11 2019-11-26 Ams Sensors Singapore Pte. Ltd. Determining spectral emission characteristics of incident radiation
KR102491497B1 (ko) * 2015-11-30 2023-01-20 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
EP3182453A1 (en) * 2015-12-17 2017-06-21 Autoliv Development AB Image sensor for a vision device and vision method for a motor vehicle
CN106162113B (zh) * 2016-08-30 2019-03-15 辽宁中蓝电子科技有限公司 彩色加黑白双色像素一体式设计的图像传感器
CN108337455B (zh) * 2017-01-18 2022-03-11 三星电子株式会社 图像传感器
KR102507474B1 (ko) 2018-01-09 2023-03-10 삼성전자주식회사 이미지 센서
CN113395497A (zh) 2019-10-18 2021-09-14 华为技术有限公司 图像处理方法、图像处理装置以及摄像装置
CN111952403B (zh) * 2020-08-26 2022-08-30 合肥工业大学 一种基于二硒化铂/n-型超薄硅肖特基结的颜色探测器及其制备方法

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Also Published As

Publication number Publication date
CN101236981A (zh) 2008-08-06
US7679112B2 (en) 2010-03-16
KR20080071247A (ko) 2008-08-04
CN101236981B (zh) 2012-09-05
TW200834899A (en) 2008-08-16
KR100929349B1 (ko) 2009-12-03
US20080179641A1 (en) 2008-07-31

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