TW200834899A - Color image sensors having pixels with cyan-type and yellow-type color characteristics therein - Google Patents

Color image sensors having pixels with cyan-type and yellow-type color characteristics therein Download PDF

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Publication number
TW200834899A
TW200834899A TW096150571A TW96150571A TW200834899A TW 200834899 A TW200834899 A TW 200834899A TW 096150571 A TW096150571 A TW 096150571A TW 96150571 A TW96150571 A TW 96150571A TW 200834899 A TW200834899 A TW 200834899A
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TW
Taiwan
Prior art keywords
image sensor
photodiode
color
image
photodetector
Prior art date
Application number
TW096150571A
Other languages
English (en)
Chinese (zh)
Inventor
Tetsuo Asaba
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200834899A publication Critical patent/TW200834899A/zh

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Classifications

    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04F—FINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
    • E04F21/00—Implements for finishing work on buildings
    • E04F21/165—Implements for finishing work on buildings for finishing joints, e.g. implements for raking or filling joints, jointers
    • E04F21/1655—Implements for finishing work on buildings for finishing joints, e.g. implements for raking or filling joints, jointers for finishing corner joints
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045—Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045—Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter
    • H04N2209/046—Colour interpolation to calculate the missing colour values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
TW096150571A 2007-01-30 2007-12-27 Color image sensors having pixels with cyan-type and yellow-type color characteristics therein TW200834899A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070009202A KR100929349B1 (ko) 2007-01-30 2007-01-30 유기물 컬러 필터를 포함하지 않는 컬러 픽셀, 이미지 센서, 및 컬러 보간방법

Publications (1)

Publication Number Publication Date
TW200834899A true TW200834899A (en) 2008-08-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW096150571A TW200834899A (en) 2007-01-30 2007-12-27 Color image sensors having pixels with cyan-type and yellow-type color characteristics therein

Country Status (5)

Country Link
US (1) US7679112B2 (enExample)
JP (1) JP2008187169A (enExample)
KR (1) KR100929349B1 (enExample)
CN (1) CN101236981B (enExample)
TW (1) TW200834899A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100870821B1 (ko) * 2007-06-29 2008-11-27 매그나칩 반도체 유한회사 후면 조사 이미지 센서
KR101534547B1 (ko) * 2008-11-24 2015-07-08 삼성전자주식회사 이미지 센서 및 이를 포함하는 시스템
US9142580B2 (en) 2012-08-10 2015-09-22 Canon Kabushiki Kaisha Image pickup apparatus and image pickup system
JP2014187648A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 固体撮像装置
KR102219199B1 (ko) 2014-04-29 2021-02-23 삼성전자주식회사 이미지 센서의 픽셀 어레이 및 이미지 센서
US10488264B2 (en) 2014-09-11 2019-11-26 Ams Sensors Singapore Pte. Ltd. Determining spectral emission characteristics of incident radiation
KR102491497B1 (ko) * 2015-11-30 2023-01-20 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
EP3182453A1 (en) * 2015-12-17 2017-06-21 Autoliv Development AB Image sensor for a vision device and vision method for a motor vehicle
CN106162113B (zh) * 2016-08-30 2019-03-15 辽宁中蓝电子科技有限公司 彩色加黑白双色像素一体式设计的图像传感器
CN108337455B (zh) * 2017-01-18 2022-03-11 三星电子株式会社 图像传感器
KR102507474B1 (ko) 2018-01-09 2023-03-10 삼성전자주식회사 이미지 센서
CN111131798B (zh) * 2019-10-18 2021-06-01 华为技术有限公司 图像处理方法、图像处理装置以及摄像装置
CN111952403B (zh) * 2020-08-26 2022-08-30 合肥工业大学 一种基于二硒化铂/n-型超薄硅肖特基结的颜色探测器及其制备方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971065A (en) * 1975-03-05 1976-07-20 Eastman Kodak Company Color imaging array
KR100310102B1 (ko) * 1998-03-05 2001-12-17 윤종용 고체 컬러 이미지 소자 및 그의 제조 방법
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
AUPQ289099A0 (en) * 1999-09-16 1999-10-07 Silverbrook Research Pty Ltd Method and apparatus for manipulating a bayer image
US6392216B1 (en) * 1999-07-30 2002-05-21 Intel Corporation Method for compensating the non-uniformity of imaging devices
US6933976B1 (en) * 1999-09-03 2005-08-23 Fuji Photo Film Co., Ltd. Solid-state image pickup device
JP4216976B2 (ja) 1999-12-06 2009-01-28 富士フイルム株式会社 固体撮像装置およびその製造方法
US6518085B1 (en) * 2000-08-09 2003-02-11 Taiwan Semiconductor Manufacturing Company Method for making spectrally efficient photodiode structures for CMOS color imagers
KR100521971B1 (ko) * 2000-10-04 2005-10-17 매그나칩 반도체 유한회사 찌꺼기 발생 및 칼라필터 간의 겹침을 방지할 수 있는이미지 센서 및 제조 방법
US6548833B1 (en) * 2000-10-26 2003-04-15 Biomorphic Vlsi, Inc. Color-optimized pixel array design
US6930336B1 (en) * 2001-06-18 2005-08-16 Foveon, Inc. Vertical-color-filter detector group with trench isolation
US7034873B2 (en) * 2001-06-29 2006-04-25 Vanguard International Semiconductor Corporation Pixel defect correction in a CMOS active pixel image sensor
KR100396898B1 (ko) * 2001-09-13 2003-09-02 삼성전자주식회사 이미지센서 출력데이터 처리장치 및 처리방법
US20030103151A1 (en) * 2001-12-03 2003-06-05 Xiaodong Luo Image sensor having photosensitive color filters
US20040178463A1 (en) * 2002-03-20 2004-09-16 Foveon, Inc. Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group
JP2003303949A (ja) * 2002-04-11 2003-10-24 Canon Inc 撮像装置
JP4190805B2 (ja) * 2002-06-12 2008-12-03 オリンパス株式会社 撮像装置
US6946715B2 (en) * 2003-02-19 2005-09-20 Micron Technology, Inc. CMOS image sensor and method of fabrication
JP3795843B2 (ja) * 2002-08-01 2006-07-12 富士通株式会社 半導体受光装置
US7236190B2 (en) * 2002-10-31 2007-06-26 Freescale Semiconductor, Inc. Digital image processing using white balance and gamma correction
US6964916B2 (en) * 2003-06-06 2005-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor fabrication method and structure
CN1661806A (zh) * 2004-02-24 2005-08-31 三洋电机株式会社 固体摄像元件和固体摄像元件的制造方法
JP2006014316A (ja) * 2004-06-22 2006-01-12 Samsung Electronics Co Ltd サブサンプリングされたアナログ信号を平均化する改善された固体撮像素子及びその駆動方法
KR100630727B1 (ko) * 2004-12-29 2006-10-02 삼성전자주식회사 Ｃｍｏｓ 이미지 센서의 광특성 테스트 패턴 및 광특성테스트 방법
KR100672664B1 (ko) * 2004-12-29 2007-01-24 동부일렉트로닉스 주식회사 버티컬 씨모스 이미지 센서의 제조방법
KR100606918B1 (ko) * 2004-12-30 2006-08-01 동부일렉트로닉스 주식회사 버티컬 씨모스 이미지 센서의 핫 픽셀 및 그 제조방법
JP4340248B2 (ja) * 2005-03-17 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体撮像装置を製造する方法
KR100672812B1 (ko) * 2005-05-02 2007-01-22 삼성전자주식회사 이미지 센서와 그 제조 방법
KR100699849B1 (ko) * 2005-06-21 2007-03-27 삼성전자주식회사 국부적인 불순물 영역을 갖는 ｃｍｏｓ 이미지 소자 및 그제조방법
KR100660549B1 (ko) * 2005-07-13 2006-12-22 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR100712524B1 (ko) * 2005-08-09 2007-04-30 삼성전자주식회사 확장된 게이트 표면적을 갖는 드라이브 트랜지스터를구비한 ｃｍｏｓ 이미지 센서 및 그 제조방법
JP2007081401A (ja) * 2005-09-12 2007-03-29 Magnachip Semiconductor Ltd 光干渉を減少させたイメージセンサ
KR100710207B1 (ko) * 2005-09-22 2007-04-20 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
KR20070087847A (ko) * 2005-12-28 2007-08-29 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7419844B2 (en) * 2006-03-17 2008-09-02 Sharp Laboratories Of America, Inc. Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer
US7608874B2 (en) * 2006-03-17 2009-10-27 Sharp Laboratories Of America, Inc. Fully isolated photodiode stack
KR20080061483A (ko) * 2006-12-28 2008-07-03 동부일렉트로닉스 주식회사 이미지 센서 및 이의 제조 방법

Also Published As

Publication number Publication date
KR100929349B1 (ko) 2009-12-03
CN101236981B (zh) 2012-09-05
US20080179641A1 (en) 2008-07-31
CN101236981A (zh) 2008-08-06
KR20080071247A (ko) 2008-08-04
US7679112B2 (en) 2010-03-16
JP2008187169A (ja) 2008-08-14

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