CN101236981B - 包含有青色型和黄色型颜色特性的像素的彩色图像传感器 - Google Patents

包含有青色型和黄色型颜色特性的像素的彩色图像传感器 Download PDF

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Publication number
CN101236981B
CN101236981B CN2007103052050A CN200710305205A CN101236981B CN 101236981 B CN101236981 B CN 101236981B CN 2007103052050 A CN2007103052050 A CN 2007103052050A CN 200710305205 A CN200710305205 A CN 200710305205A CN 101236981 B CN101236981 B CN 101236981B
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pixel
type
detector
imageing sensor
photo
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CN2007103052050A
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CN101236981A (zh
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浅羽哲朗
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • EFIXED CONSTRUCTIONS
    • E04BUILDING
    • E04FFINISHING WORK ON BUILDINGS, e.g. STAIRS, FLOORS
    • E04F21/00Implements for finishing work on buildings
    • E04F21/165Implements for finishing work on buildings for finishing joints, e.g. implements for raking or filling joints, jointers
    • E04F21/1655Implements for finishing work on buildings for finishing joints, e.g. implements for raking or filling joints, jointers for finishing corner joints
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • H10F39/1825Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00Details of colour television systems
    • H04N2209/04Picture signal generators
    • H04N2209/041Picture signal generators using solid-state devices
    • H04N2209/042Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00Details of colour television systems
    • H04N2209/04Picture signal generators
    • H04N2209/041Picture signal generators using solid-state devices
    • H04N2209/042Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/045Picture signal generators using solid-state devices having a single pick-up sensor using mosaic colour filter
    • H04N2209/046Colour interpolation to calculate the missing colour values
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
CN2007103052050A 2007-01-30 2007-12-29 包含有青色型和黄色型颜色特性的像素的彩色图像传感器 Expired - Fee Related CN101236981B (zh)

Applications Claiming Priority (2)

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KR9202/07 2007-01-30
KR1020070009202A KR100929349B1 (ko) 2007-01-30 2007-01-30 유기물 컬러 필터를 포함하지 않는 컬러 픽셀, 이미지 센서, 및 컬러 보간방법

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CN101236981A CN101236981A (zh) 2008-08-06
CN101236981B true CN101236981B (zh) 2012-09-05

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US (1) US7679112B2 (enExample)
JP (1) JP2008187169A (enExample)
KR (1) KR100929349B1 (enExample)
CN (1) CN101236981B (enExample)
TW (1) TW200834899A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100870821B1 (ko) * 2007-06-29 2008-11-27 매그나칩 반도체 유한회사 후면 조사 이미지 센서
KR101534547B1 (ko) * 2008-11-24 2015-07-08 삼성전자주식회사 이미지 센서 및 이를 포함하는 시스템
US9142580B2 (en) 2012-08-10 2015-09-22 Canon Kabushiki Kaisha Image pickup apparatus and image pickup system
JP2014187648A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 固体撮像装置
KR102219199B1 (ko) 2014-04-29 2021-02-23 삼성전자주식회사 이미지 센서의 픽셀 어레이 및 이미지 센서
US10488264B2 (en) 2014-09-11 2019-11-26 Ams Sensors Singapore Pte. Ltd. Determining spectral emission characteristics of incident radiation
KR102491497B1 (ko) * 2015-11-30 2023-01-20 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치
EP3182453A1 (en) * 2015-12-17 2017-06-21 Autoliv Development AB Image sensor for a vision device and vision method for a motor vehicle
CN106162113B (zh) * 2016-08-30 2019-03-15 辽宁中蓝电子科技有限公司 彩色加黑白双色像素一体式设计的图像传感器
CN108337455B (zh) * 2017-01-18 2022-03-11 三星电子株式会社 图像传感器
KR102507474B1 (ko) 2018-01-09 2023-03-10 삼성전자주식회사 이미지 센서
CN111131798B (zh) * 2019-10-18 2021-06-01 华为技术有限公司 图像处理方法、图像处理装置以及摄像装置
CN111952403B (zh) * 2020-08-26 2022-08-30 合肥工业大学 一种基于二硒化铂/n-型超薄硅肖特基结的颜色探测器及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1298483A (zh) * 1998-04-24 2001-06-06 福维昂公司 使用三阱结构的有源像素单元成像矩阵中的颜色分离
CN1423481A (zh) * 2001-12-03 2003-06-11 全视技术有限公司 具有光敏彩色过滤器的图像传感器
CN1661806A (zh) * 2004-02-24 2005-08-31 三洋电机株式会社 固体摄像元件和固体摄像元件的制造方法
CN1835243A (zh) * 2005-03-17 2006-09-20 富士通株式会社 Mos图像传感器

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971065A (en) * 1975-03-05 1976-07-20 Eastman Kodak Company Color imaging array
KR100310102B1 (ko) * 1998-03-05 2001-12-17 윤종용 고체 컬러 이미지 소자 및 그의 제조 방법
AUPQ289099A0 (en) * 1999-09-16 1999-10-07 Silverbrook Research Pty Ltd Method and apparatus for manipulating a bayer image
US6392216B1 (en) * 1999-07-30 2002-05-21 Intel Corporation Method for compensating the non-uniformity of imaging devices
US6933976B1 (en) * 1999-09-03 2005-08-23 Fuji Photo Film Co., Ltd. Solid-state image pickup device
JP4216976B2 (ja) 1999-12-06 2009-01-28 富士フイルム株式会社 固体撮像装置およびその製造方法
US6518085B1 (en) * 2000-08-09 2003-02-11 Taiwan Semiconductor Manufacturing Company Method for making spectrally efficient photodiode structures for CMOS color imagers
KR100521971B1 (ko) * 2000-10-04 2005-10-17 매그나칩 반도체 유한회사 찌꺼기 발생 및 칼라필터 간의 겹침을 방지할 수 있는이미지 센서 및 제조 방법
US6548833B1 (en) * 2000-10-26 2003-04-15 Biomorphic Vlsi, Inc. Color-optimized pixel array design
US6930336B1 (en) * 2001-06-18 2005-08-16 Foveon, Inc. Vertical-color-filter detector group with trench isolation
US7034873B2 (en) * 2001-06-29 2006-04-25 Vanguard International Semiconductor Corporation Pixel defect correction in a CMOS active pixel image sensor
KR100396898B1 (ko) * 2001-09-13 2003-09-02 삼성전자주식회사 이미지센서 출력데이터 처리장치 및 처리방법
US20040178463A1 (en) * 2002-03-20 2004-09-16 Foveon, Inc. Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group
JP2003303949A (ja) * 2002-04-11 2003-10-24 Canon Inc 撮像装置
JP4190805B2 (ja) * 2002-06-12 2008-12-03 オリンパス株式会社 撮像装置
US6946715B2 (en) * 2003-02-19 2005-09-20 Micron Technology, Inc. CMOS image sensor and method of fabrication
JP3795843B2 (ja) * 2002-08-01 2006-07-12 富士通株式会社 半導体受光装置
US7236190B2 (en) * 2002-10-31 2007-06-26 Freescale Semiconductor, Inc. Digital image processing using white balance and gamma correction
US6964916B2 (en) * 2003-06-06 2005-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor fabrication method and structure
JP2006014316A (ja) * 2004-06-22 2006-01-12 Samsung Electronics Co Ltd サブサンプリングされたアナログ信号を平均化する改善された固体撮像素子及びその駆動方法
KR100630727B1 (ko) * 2004-12-29 2006-10-02 삼성전자주식회사 Cmos 이미지 센서의 광특성 테스트 패턴 및 광특성테스트 방법
KR100672664B1 (ko) * 2004-12-29 2007-01-24 동부일렉트로닉스 주식회사 버티컬 씨모스 이미지 센서의 제조방법
KR100606918B1 (ko) * 2004-12-30 2006-08-01 동부일렉트로닉스 주식회사 버티컬 씨모스 이미지 센서의 핫 픽셀 및 그 제조방법
KR100672812B1 (ko) * 2005-05-02 2007-01-22 삼성전자주식회사 이미지 센서와 그 제조 방법
KR100699849B1 (ko) * 2005-06-21 2007-03-27 삼성전자주식회사 국부적인 불순물 영역을 갖는 cmos 이미지 소자 및 그제조방법
KR100660549B1 (ko) * 2005-07-13 2006-12-22 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR100712524B1 (ko) * 2005-08-09 2007-04-30 삼성전자주식회사 확장된 게이트 표면적을 갖는 드라이브 트랜지스터를구비한 cmos 이미지 센서 및 그 제조방법
JP2007081401A (ja) * 2005-09-12 2007-03-29 Magnachip Semiconductor Ltd 光干渉を減少させたイメージセンサ
KR100710207B1 (ko) * 2005-09-22 2007-04-20 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
KR20070087847A (ko) * 2005-12-28 2007-08-29 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
US7419844B2 (en) * 2006-03-17 2008-09-02 Sharp Laboratories Of America, Inc. Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer
US7608874B2 (en) * 2006-03-17 2009-10-27 Sharp Laboratories Of America, Inc. Fully isolated photodiode stack
KR20080061483A (ko) * 2006-12-28 2008-07-03 동부일렉트로닉스 주식회사 이미지 센서 및 이의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1298483A (zh) * 1998-04-24 2001-06-06 福维昂公司 使用三阱结构的有源像素单元成像矩阵中的颜色分离
CN1423481A (zh) * 2001-12-03 2003-06-11 全视技术有限公司 具有光敏彩色过滤器的图像传感器
CN1661806A (zh) * 2004-02-24 2005-08-31 三洋电机株式会社 固体摄像元件和固体摄像元件的制造方法
CN1835243A (zh) * 2005-03-17 2006-09-20 富士通株式会社 Mos图像传感器

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Publication number Publication date
KR100929349B1 (ko) 2009-12-03
US20080179641A1 (en) 2008-07-31
CN101236981A (zh) 2008-08-06
KR20080071247A (ko) 2008-08-04
US7679112B2 (en) 2010-03-16
JP2008187169A (ja) 2008-08-14
TW200834899A (en) 2008-08-16

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