JP2008185970A - パターンの形成方法、電子デバイスの製造方法および電子デバイス - Google Patents

パターンの形成方法、電子デバイスの製造方法および電子デバイス Download PDF

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Publication number
JP2008185970A
JP2008185970A JP2007021700A JP2007021700A JP2008185970A JP 2008185970 A JP2008185970 A JP 2008185970A JP 2007021700 A JP2007021700 A JP 2007021700A JP 2007021700 A JP2007021700 A JP 2007021700A JP 2008185970 A JP2008185970 A JP 2008185970A
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JP
Japan
Prior art keywords
pattern
phase shift
positive photoresist
photoresist
halftone phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007021700A
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English (en)
Japanese (ja)
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JP2008185970A5 (enExample
Inventor
Shuji Nakao
修治 中尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2007021700A priority Critical patent/JP2008185970A/ja
Priority to US12/010,780 priority patent/US7824843B2/en
Publication of JP2008185970A publication Critical patent/JP2008185970A/ja
Publication of JP2008185970A5 publication Critical patent/JP2008185970A5/ja
Priority to US12/902,996 priority patent/US20110033656A1/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007021700A 2007-01-31 2007-01-31 パターンの形成方法、電子デバイスの製造方法および電子デバイス Pending JP2008185970A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007021700A JP2008185970A (ja) 2007-01-31 2007-01-31 パターンの形成方法、電子デバイスの製造方法および電子デバイス
US12/010,780 US7824843B2 (en) 2007-01-31 2008-01-30 Pattern forming method, electronic device manufacturing method and electronic device
US12/902,996 US20110033656A1 (en) 2007-01-31 2010-10-12 Pattern forming method, electronic device manufacturing method and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007021700A JP2008185970A (ja) 2007-01-31 2007-01-31 パターンの形成方法、電子デバイスの製造方法および電子デバイス

Publications (2)

Publication Number Publication Date
JP2008185970A true JP2008185970A (ja) 2008-08-14
JP2008185970A5 JP2008185970A5 (enExample) 2010-03-04

Family

ID=39668334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007021700A Pending JP2008185970A (ja) 2007-01-31 2007-01-31 パターンの形成方法、電子デバイスの製造方法および電子デバイス

Country Status (2)

Country Link
US (2) US7824843B2 (enExample)
JP (1) JP2008185970A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016206234A (ja) * 2015-04-15 2016-12-08 大日本印刷株式会社 変形照明用アパーチャおよび露光装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010199347A (ja) * 2009-02-26 2010-09-09 Canon Inc 露光方法及びデバイス製造方法
WO2013080900A1 (en) * 2011-12-02 2013-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2613367A3 (en) 2012-01-06 2013-09-04 Imec Method for producing a led device .
CN103309165A (zh) * 2012-03-09 2013-09-18 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN107193184A (zh) * 2017-05-27 2017-09-22 中国电子科技集团公司第四十研究所 一种用于制备高精度铬版掩膜版电路图形的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095898A (ja) * 2002-08-30 2004-03-25 Sony Corp 半導体装置の製造方法
JP2004251969A (ja) * 2003-02-18 2004-09-09 Renesas Technology Corp 位相シフトマスク、位相シフトマスクを用いたパターンの形成方法および電子デバイスの製造方法
JP2005189683A (ja) * 2003-12-26 2005-07-14 Nec Electronics Corp ホールパターン設計方法、およびフォトマスク
JP2005197349A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 微細パターン形成方法及び半導体装置の製造方法
JP2005275386A (ja) * 2004-02-23 2005-10-06 Toshiba Corp マスクパターンデータ作成方法、パターン形成方法、レチクルの補正方法、レチクルの作成方法及び半導体装置の製造方法
US20060189122A1 (en) * 2005-02-22 2006-08-24 Schroeder Uwe P Method of forming isolated features of semiconductor devices
JP2006245270A (ja) 2005-03-03 2006-09-14 Canon Inc 露光装置及び露光方法
JP2007310086A (ja) * 2006-05-17 2007-11-29 Toshiba Corp 半導体装置製造におけるパターン形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2965655B2 (ja) 1990-10-08 1999-10-18 松下電器産業株式会社 パターン形成方法
JP3421466B2 (ja) 1995-03-16 2003-06-30 株式会社東芝 レジストパターン形成方法
JPH11214280A (ja) 1998-01-20 1999-08-06 Nec Corp パターン形成方法
US6680163B2 (en) * 2000-12-04 2004-01-20 United Microelectronics Corp. Method of forming opening in wafer layer
JP2004193400A (ja) 2002-12-12 2004-07-08 Toshiba Corp 半導体装置の製造方法及びフォトマスク
JP2006156422A (ja) 2002-12-27 2006-06-15 Nikon Corp パターン形成方法、電子デバイス製造方法、及び電子デバイス
US7235348B2 (en) 2003-05-22 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Water soluble negative tone photoresist
JP4347209B2 (ja) 2004-12-13 2009-10-21 東京応化工業株式会社 レジストパターンの形成方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095898A (ja) * 2002-08-30 2004-03-25 Sony Corp 半導体装置の製造方法
JP2004251969A (ja) * 2003-02-18 2004-09-09 Renesas Technology Corp 位相シフトマスク、位相シフトマスクを用いたパターンの形成方法および電子デバイスの製造方法
JP2005189683A (ja) * 2003-12-26 2005-07-14 Nec Electronics Corp ホールパターン設計方法、およびフォトマスク
JP2005197349A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 微細パターン形成方法及び半導体装置の製造方法
JP2005275386A (ja) * 2004-02-23 2005-10-06 Toshiba Corp マスクパターンデータ作成方法、パターン形成方法、レチクルの補正方法、レチクルの作成方法及び半導体装置の製造方法
US20060189122A1 (en) * 2005-02-22 2006-08-24 Schroeder Uwe P Method of forming isolated features of semiconductor devices
JP2006245270A (ja) 2005-03-03 2006-09-14 Canon Inc 露光装置及び露光方法
JP2007310086A (ja) * 2006-05-17 2007-11-29 Toshiba Corp 半導体装置製造におけるパターン形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN6011026243; Ｃｈａｒｌｅｓ　Ｃｈａｎｇ　ｅｔ　ａｌ．: 'Ｌｏｗ　Ｐｒｏｘｉｍｉｔｙ　Ｃｏｎｔａｃｔ　Ｈｏｌｅｓ　Ｆｏｒｍａｔｉｏｎ　ｂｙ　Ｕｓｉｎｇ　Ｄｏｕｂｌｅ　Ｅｘｐｏｓｕｒｅ　Ｔｅｃｈｎｏｌｏｇｙ　（ＤＥＴ）' Ｐｒｏｃｅｅｄｉｎｇｓ　ｏｆ　ＳＰＩＥ Ｖｏｌ．５０４０, 2003, ｐｐ．１２４１-１２４６, Ｔｈｅ　Ｉｎｔｅｒｎａｔｉｏｎａｌ　Ｓｏｃｉｅｔｙ　ｆｏｒ　Ｏｐｔｉｃａｌ　Ｅｎｇｉｎｅｅｒｉｎｇ *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016206234A (ja) * 2015-04-15 2016-12-08 大日本印刷株式会社 変形照明用アパーチャおよび露光装置

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Publication number Publication date
US20110033656A1 (en) 2011-02-10
US7824843B2 (en) 2010-11-02
US20080182082A1 (en) 2008-07-31

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