JP2008177554A - 多層配線基板、及び多層配線基板埋込用の給電構造体 - Google Patents
多層配線基板、及び多層配線基板埋込用の給電構造体 Download PDFInfo
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Abstract
【解決手段】多層配線基板10は、コア基板11と、コア基板11の上面12に配置されるビルドアップ層31と、コア基板11の下面13に配置されるビルドアップ層32と、コア基板11及びビルドアップ層31,32を貫通する貫通孔57に埋め込まれた給電構造体51とを備える。給電構造体51は、銅を主材料とする導体金属棒52と、銅を主材料とし、導体金属棒52と同軸上に配置された導体金属筒53と、導体金属棒52及び導体金属筒53の隙間を埋める絶縁材54とを含んで構成されている。
【選択図】図1
Description
また、ICチップ110に大電流を供給するためにスルーホール導体116,118の数を増やすことも考えられるが、その方法では信号配線用のスペースが確保できなくなる。そのため、十分な給電容量を確保するための別の方法が望まれている。
ここで、給電構造体は少なくとも上記スルーホール導体よりも低抵抗であることが要求され、具体的には抵抗率が3μΩ/cm2以下であることが好ましい。即ち、上記スルーホール導体よりも低抵抗でなければ、給電構造体を設置する意味がないからである。その点、抵抗率が3μΩ/cm2以下の給電構造体を使用した場合には、大径化を回避しつつ十分大きな電力を流すことができるという利点がある。なお、上述したように給電構造体が導体金属棒と導体金属筒とを備えている場合には、導体金属棒及び導体金属筒の各々について抵抗率が3μΩ/cm2以下になっていることが望ましい。
・上記実施の形態の多層配線基板10では、導体金属部材としての導体金属棒52及び導体金属筒53を有する二重円筒状の給電構造体51を用いてICチップ21への給電を行うようにしたが、図10に示す多層配線基板61のように、導体金属棒62のみからなる給電構造体63を用いてICチップ21への給電を行うように構成してもよい。導体金属棒62は、銅を主材料として形成され、その表面にニッケル−金めっきが施されている。この導体金属棒62は、コア基板11のスルーホール導体16よりも小径である。また、給電構造体63は、電源用とグランド用とに区分され、電源用の給電構造体63の主面側端部及び裏面側端部はパワー用の配線パターンに接続され、グランド用の給電構造体63の主面側端部及び裏面側端部はグランド用の配線パターンに接続される。このように多層配線基板61を構成しても、ICチップ21を動作させるために十分大きな電力を供給することができる。
11…コア基板
12…主面としての上面
13…裏面としての下面
16…スルーホール導体
22…素子搭載部
31…第1積層配線部としてのビルドアップ層
32…第2積層配線部としてのビルドアップ層
33…主面側絶縁層としての樹脂絶縁層
34…主面側導体層としての導体層
41…裏面側絶縁層としての樹脂絶縁層
42…裏面側導体層としての導体層
51,63…給電構造体
52,62…導体金属棒
53…導体金属筒
54…絶縁材
57…貫通孔
58…切欠部
59,64…パッド部
Claims (12)
- 主面及び裏面を有するコア基板と、
前記主面上に配置され、主面側絶縁層と主面側導体層とを交互に積層してなり、素子搭載部をその表層に有する第1積層配線部と、
前記裏面上に配置され、裏面側絶縁層と裏面側導体層とを交互に積層してなる第2積層配線部と、
前記コア基板に形成され、前記主面側導体層と前記裏面側導体層とを導通させるスルーホール導体と、
銅を主材料とする導体金属部材を構成要素として含み、前記第1積層配線部、前記コア基板及び前記第2積層配線部を貫通する貫通孔内に埋め込まれた給電構造体と
を備え、前記導体金属部材が給電用の主面側導体層及び給電用の裏面側導体層にそれぞれ電気的に接続されていることを特徴とする多層配線基板。 - 前記給電構造体は、銅を主材料とする導体金属棒を構成要素として含むことを特徴とする請求項1に記載の多層配線基板。
- 前記給電構造体は、銅を主材料とする導体金属棒と、銅を主材料とし、前記導体金属棒と同軸上に配置された導体金属筒と、前記導体金属棒及び前記導体金属筒の隙間を埋める絶縁材とを含んで構成されていることを特徴とする請求項1に記載の多層配線基板。
- 前記導体金属棒の主面側端部は、電源用の主面側導体層に電気的に接続され、前記導体金属棒の裏面側端部は、電源用の裏面側導体層に電気的に接続され、前記導体金属筒の主面側端部は、グランド用の主面側導体層に電気的に接続され、前記導体金属筒の裏面側端部は、グランド用の裏面側導体層に電気的に接続されていることを特徴とする請求項3に記載の多層配線基板。
- 前記導体金属筒は、前記主面側端部及び前記裏面側端部のうちの少なくともいずれかに切欠部を有し、その切欠部のある箇所には、前記電源用の主面側導体層及び前記電源用の裏面側導体層の少なくともいずれかが敷設されていることを特徴とする請求項3または4に記載の多層配線基板。
- 前記導体金属筒は、前記主面側端部及び前記裏面側端部のうちの少なくともいずれかに、フランジ状またはタブ状のパッド部を有し、前記パッド部には、前記グランド用の主面側導体層及び前記グランド用の裏面側導体層の少なくともいずれかが電気的に接続されていることを特徴とする請求項3乃至5のいずれか1項に記載の多層配線基板。
- 前記コア基板の略中央部に前記素子搭載部が配置され、前記コア基板の外周部における複数箇所に前記給電構造体が配置されていることを特徴とする請求項1乃至6のいずれか1項に記載の多層配線基板。
- 前記給電構造体は、抵抗率が3μΩ/cm2以下であることを特徴とする請求項1乃至7のいずれか1項に記載の多層配線基板。
- 銅を主材料とする導体金属棒と、銅を主材料とし、前記導体金属棒と同軸上に配置された導体金属筒と、前記導体金属棒及び前記導体金属筒の隙間を埋める絶縁材とを含んで構成された多層配線基板埋込用の給電構造体。
- 前記導体金属筒は、前記主面側端部及び前記裏面側端部のうちの少なくともいずれかに切欠部を有することを特徴とする請求項9に記載の多層配線基板埋込用の給電構造体。
- 前記導体金属筒は、前記主面側端部及び前記裏面側端部のうちの少なくともいずれかに、フランジ状またはタブ状のパッド部を有することを特徴とする請求項9または10に記載の多層配線基板埋込用の給電構造体。
- 抵抗率が3μΩ/cm2以下であることを特徴とする請求項9乃至11のいずれか1項に記載の多層配線基板埋込用の給電構造体。
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Cited By (4)
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WO2012150817A2 (en) * | 2011-05-03 | 2012-11-08 | Lg Innotek Co., Ltd. | Method for manufacturing printed circuit board |
WO2014034443A1 (ja) * | 2012-08-31 | 2014-03-06 | ソニー株式会社 | 配線基板及び配線基板の製造方法 |
JP2016018577A (ja) * | 2014-07-08 | 2016-02-01 | 日東電工株式会社 | 配線回路基板 |
JP2018129463A (ja) * | 2017-02-10 | 2018-08-16 | 田淵電機株式会社 | プリント回路基板及びプリント回路装置 |
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TWI368978B (en) * | 2007-09-21 | 2012-07-21 | Unimicron Technology Corp | Method for fabricating ball-implantation side surface structure of package substrate |
US20090102050A1 (en) * | 2007-10-17 | 2009-04-23 | Phoenix Precision Technology Corporation | Solder ball disposing surface structure of package substrate |
JP2009135162A (ja) * | 2007-11-29 | 2009-06-18 | Shinko Electric Ind Co Ltd | 配線基板及び電子部品装置 |
JP2010141098A (ja) * | 2008-12-11 | 2010-06-24 | Shinko Electric Ind Co Ltd | 電子部品内蔵基板及びその製造方法 |
US8400782B2 (en) * | 2009-07-24 | 2013-03-19 | Ibiden Co., Ltd. | Wiring board and method for manufacturing the same |
US8207453B2 (en) | 2009-12-17 | 2012-06-26 | Intel Corporation | Glass core substrate for integrated circuit devices and methods of making the same |
US9420707B2 (en) | 2009-12-17 | 2016-08-16 | Intel Corporation | Substrate for integrated circuit devices including multi-layer glass core and methods of making the same |
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US20080149384A1 (en) | 2008-06-26 |
US8093506B2 (en) | 2012-01-10 |
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