JP2008135731A5 - - Google Patents
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- Publication number
- JP2008135731A5 JP2008135731A5 JP2007277694A JP2007277694A JP2008135731A5 JP 2008135731 A5 JP2008135731 A5 JP 2008135731A5 JP 2007277694 A JP2007277694 A JP 2007277694A JP 2007277694 A JP2007277694 A JP 2007277694A JP 2008135731 A5 JP2008135731 A5 JP 2008135731A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- forming
- organic
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims 79
- 239000004065 semiconductor Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 12
- 229920000620 organic polymer Polymers 0.000 claims 9
- 239000012044 organic layer Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 150000001282 organosilanes Chemical class 0.000 claims 6
- 229910010272 inorganic material Inorganic materials 0.000 claims 5
- 239000011147 inorganic material Substances 0.000 claims 5
- 238000006116 polymerization reaction Methods 0.000 claims 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 3
- 238000007599 discharging Methods 0.000 claims 3
- 230000003301 hydrolyzing effect Effects 0.000 claims 3
- 229910000077 silane Inorganic materials 0.000 claims 3
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007277694A JP5210594B2 (ja) | 2006-10-31 | 2007-10-25 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006295423 | 2006-10-31 | ||
| JP2006295423 | 2006-10-31 | ||
| JP2007277694A JP5210594B2 (ja) | 2006-10-31 | 2007-10-25 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008135731A JP2008135731A (ja) | 2008-06-12 |
| JP2008135731A5 true JP2008135731A5 (cg-RX-API-DMAC7.html) | 2010-11-11 |
| JP5210594B2 JP5210594B2 (ja) | 2013-06-12 |
Family
ID=39560314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007277694A Expired - Fee Related JP5210594B2 (ja) | 2006-10-31 | 2007-10-25 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5210594B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009302441A (ja) * | 2008-06-17 | 2009-12-24 | Konica Minolta Holdings Inc | 有機ｔｆｔ |
| JP2010016072A (ja) * | 2008-07-02 | 2010-01-21 | Canon Inc | 薄膜トランジスタ |
| US8835909B2 (en) * | 2008-08-04 | 2014-09-16 | The Trustees Of Princeton University | Hybrid dielectric material for thin film transistors |
| TWI508282B (zh) * | 2008-08-08 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| KR20160063402A (ko) * | 2008-09-12 | 2016-06-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 디스플레이 장치 |
| KR101490148B1 (ko) | 2008-09-19 | 2015-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| EP2172804B1 (en) * | 2008-10-03 | 2016-05-11 | Semiconductor Energy Laboratory Co, Ltd. | Display device |
| TWI518913B (zh) * | 2008-11-07 | 2016-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
| JP5587591B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5587592B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5504633B2 (ja) * | 2009-01-26 | 2014-05-28 | 株式会社リコー | 多層配線構造体、その製造方法、および表示装置 |
| TWI511288B (zh) * | 2009-03-27 | 2015-12-01 | Semiconductor Energy Lab | 半導體裝置 |
| JP5663231B2 (ja) * | 2009-08-07 | 2015-02-04 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US8558295B2 (en) | 2009-08-25 | 2013-10-15 | Electronics And Telecommunications Research Institute | Nonvolatile memory cell and method of manufacturing the same |
| US8115883B2 (en) * | 2009-08-27 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| WO2011027701A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| WO2011027702A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
| KR20120084751A (ko) * | 2009-10-05 | 2012-07-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR101872229B1 (ko) * | 2009-10-21 | 2018-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011052382A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2012063614A1 (ja) * | 2010-11-10 | 2012-05-18 | 株式会社日立製作所 | 半導体装置 |
| CN103560211B (zh) * | 2013-11-13 | 2017-04-05 | 深圳市华星光电技术有限公司 | 有机电致发光器件的制作方法及制作的有机电致发光器件 |
| JP5997299B2 (ja) * | 2015-01-05 | 2016-09-28 | 株式会社カネカ | 薄膜トランジスタ |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003059940A (ja) * | 2001-08-08 | 2003-02-28 | Fuji Photo Film Co Ltd | ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法 |
| US7102155B2 (en) * | 2003-09-04 | 2006-09-05 | Hitachi, Ltd. | Electrode substrate, thin film transistor, display device and their production |
| JP4666999B2 (ja) * | 2003-10-28 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 配線及び薄膜トランジスタの作製方法 |
| JP4884675B2 (ja) * | 2004-01-26 | 2012-02-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5057652B2 (ja) * | 2004-03-24 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| JP4482931B2 (ja) * | 2005-03-01 | 2010-06-16 | セイコーエプソン株式会社 | 半導体素子の製造方法 |
| JP2007129007A (ja) * | 2005-11-02 | 2007-05-24 | Hitachi Ltd | 有機半導体膜を有する半導体装置の製造方法 |
| JP5036219B2 (ja) * | 2006-05-30 | 2012-09-26 | 株式会社日立製作所 | 有機薄膜トランジスタを有する半導体装置の製造方法 |
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2007
- 2007-10-25 JP JP2007277694A patent/JP5210594B2/ja not_active Expired - Fee Related