JP2008129600A - Tft−lcdアレイ基板及びその製造方法 - Google Patents
Tft−lcdアレイ基板及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000010409 thin film Substances 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 2
- 229910001151 AlNi Inorganic materials 0.000 claims 2
- 239000003990 capacitor Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000008439 repair process Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 238000003486 chemical etching Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】該TFT−LCDアレイ基板は基板と、前記基板に形成され、相互に交差し、画素領域を少なくとも1つ画成する少なくとも1本のゲートラインと少なくとも1本のデータラインと、前記画素領域に形成された画素電極と、前記画素領域におけるゲートラインとデータラインとの交差部に形成され、前記ゲートラインに接続するゲート電極と、前記データラインに接続する第1のソース・ドレイン電極と、前記画素電極に接続する第2のソース・ドレイン電極と、を有する薄膜トランジスタと、前記基板に形成され、前記データラインに平行な少なくとも1本の共通電極と、を備える。
【選択図】図3A
Description
1、ゲート電極及びそのリードを形成し、更にそれと同時に遮光板及び/又は共通電極を形成できるステップと、
2、ゲート絶縁層とアモルファスシリコン半導体層を形成するステップと、
3、ソース電極と、ドレイン電極及びデータラインのリードを形成するステップと、
4、パッシベーション保護層を形成するステップと、
5、画素電極を形成するステップ、である。
Claims (18)
- 基板と、
前記基板に形成され、相互に交差して画素領域を少なくとも1つ画成する、少なくとも1本のゲートラインと少なくとも1本のデータラインと、
前記画素領域に形成された画素電極と、
前記画素領域に形成され、前記ゲートラインに接続するゲート電極と、前記データラインに接続する第1のソース・ドレイン電極と、前記画素電極に接続する第2のソース・ドレイン電極と、を有する薄膜トランジスタと、
前記基板に形成され、前記データラインに平行な少なくとも1本の共通電極と、
を備えることを特徴とするTFT−LCDアレイ基板。 - 前記画素電極の周縁部の下方に位置する遮光板を更に備えることを特徴とする請求項1に記載のTFT−LCDアレイ基板。
- 前記遮光板と共通電極とは接続して一体構成になっていることを特徴とする請求項2に記載のTFT−LCDアレイ基板。
- 前記遮光板は前記ゲートライン、又はデータラインに平行に伸びることを特徴とする請求項3に記載のTFT−LCDアレイ基板。
- 前記遮光板は、
前記ゲートラインに平行な第1の遮光板と、
前記データラインに平行な第2の遮光板と、を備えることを特徴とする請求項2又は3に記載のTFT−LCDアレイ基板。 - 前記第1の遮光板と第2の遮光板とは接続して閉鎖された構成になっていることを特徴とする請求項5に記載のTFT−LCDアレイ基板。
- 前記ゲートラインと、データラインと、薄膜トランジスタの第1と第2のソース・ドレイン電極と、共通電極と、遮光板とは、Al、Cr、W、Ta、Ti、Mo、及びAlNiのいずれか、又はそれらの任意の組み合わせからなる単層、又は複合層の構造によって構成されることを特徴とする請求項2に記載のTFT−LCDアレイ基板。
- 前記データラインと、共通電極と、遮光板とは同じ材料によって同一の工程において形成されることを特徴とする請求項2に記載のTFT−LCDアレイ基板。
- 前記画素電極の材料は酸化インジウムスズや、酸化インジウム亜鉛、または酸化アルミニウム亜鉛であることを特徴とする請求項1に記載のTFT−LCDアレイ基板。
- 基板にゲート金属薄膜を積層してパターニングし、ゲートライン及びゲート電極を形成する工程と、
ゲート絶縁層薄膜と活性層薄膜を連続して積層し、前記活性層薄膜をパターニングして半導体活性層を形成する工程と、
ソース・ドレイン金属薄膜を積層してパターニングし、データラインと、前記データラインに平行な共通電極と、データラインに接続している第1のソース・ドレイン電極と、第1のソース・ドレイン電極から離れている第2のソース・ドレイン電極と、を形成する工程と、
パッシベーション層薄膜を積層してパターニングし、第2のソースドレイン電極の上方にパッシベーション層ビアホールを形成する工程と、
画素電極層を積層してパターニングし、前記パッシベーション層ビアホールを介して第2のソース・ドレイン電極と接続する画素電極を形成する工程と、
を有するTFT−LCDアレイ基板の製造方法。 - ゲートラインと共通電極を形成するとともに、形成しようとする画素電極の周縁部下方に位置する遮光板を形成する工程を更に有することを特徴とする請求項10に記載のTFT−LCDアレイ基板の製造方法。
- 前記遮光板と共通電極とは接続して一体構成になっていることを特徴とする請求項11に記載のTFT−LCDアレイ基板の製造方法。
- 前記遮光板は前記ゲートライン、又はデータラインに平行に伸びることを特徴とする請求項12に記載のTFT−LCDアレイ基板の製造方法。
- 前記遮光板は、
前記ゲートラインに平行な第1の遮光板と、
前記データラインに平行な第2の遮光板と、を有することを特徴とする請求項12に記載のTFT−LCDアレイ基板の製造方法。 - 前記第1の遮光板と第2の遮光板とは接続して閉鎖された構成になっていることを特徴とする請求項14に記載のTFT−LCDアレイ基板の製造方法。
- 前記ゲートラインと、データラインと、薄膜トランジスタの第1及び第2のソース・ドレイン電極と、共通電極と、遮光板とは、Al、Cr、W、Ta、Ti、Mo、及びAlNiのいずれか、又はそれらの任意組み合わせからなる単層又は積層より構成されることを特徴とする請求項11に記載のTFT−LCDアレイ基板の製造方法。
- 前記画素電極層の材料は、酸化インジウムスズ、酸化インジウム亜鉛又は酸化アルミニウム亜鉛であることを特徴とする請求項10に記載のTFT−LCDアレイ基板の製造方法。
- 前記ゲート絶縁層及びパッシベーション層の材料は、シリコン窒化物、シリコン酸化物又はシリコン窒酸化物であることを特徴とする請求項10に記載のTFT−LCDアレイ基板の製造方法。
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CN200610145218.1 | 2006-11-17 | ||
CNB2006101452181A CN100442132C (zh) | 2006-11-17 | 2006-11-17 | 一种tft lcd阵列基板结构及其制造方法 |
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US7952099B2 (en) | 2006-04-21 | 2011-05-31 | Beijing Boe Optoelectronics Technology Co., Ltd. | Thin film transistor liquid crystal display array substrate |
CN100483232C (zh) | 2006-05-23 | 2009-04-29 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
KR100846974B1 (ko) | 2006-06-23 | 2008-07-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Tft lcd 어레이 기판 및 그 제조 방법 |
JP4740203B2 (ja) | 2006-08-04 | 2011-08-03 | 北京京東方光電科技有限公司 | 薄膜トランジスタlcd画素ユニットおよびその製造方法 |
JP4823989B2 (ja) | 2006-09-11 | 2011-11-24 | 北京京東方光電科技有限公司 | Tft―lcdアレイ基板及びその製造方法 |
CN100499138C (zh) * | 2006-10-27 | 2009-06-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
CN100461432C (zh) | 2006-11-03 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种薄膜晶体管沟道结构 |
CN100423082C (zh) | 2006-11-03 | 2008-10-01 | 北京京东方光电科技有限公司 | 一种平板显示器系统内接口单元 |
KR100917654B1 (ko) | 2006-11-10 | 2009-09-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 박막트랜지스터 액정 디스플레이 화소 구조 및 그 제조방법 |
US9052550B2 (en) | 2006-11-29 | 2015-06-09 | Beijing Boe Optoelectronics Technology Co., Ltd | Thin film transistor liquid crystal display |
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CN101826532B (zh) * | 2009-03-06 | 2012-05-30 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN102650783A (zh) * | 2011-12-29 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种显示装置、tft-lcd像素结构及其制作方法 |
CN103227147B (zh) * | 2013-01-17 | 2015-10-07 | 京东方科技集团股份有限公司 | Tft-lcd阵列基板及其制造方法、液晶显示器 |
CN103474396B (zh) * | 2013-09-24 | 2015-09-02 | 深圳市华星光电技术有限公司 | Tft-lcd阵列基板的制造方法 |
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CN104617109B (zh) * | 2015-01-28 | 2018-04-20 | 昆山龙腾光电有限公司 | 薄膜晶体管阵列基板及其制作方法、液晶显示装置 |
CN104701328B (zh) * | 2015-03-25 | 2017-10-13 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示装置 |
CN105070719A (zh) * | 2015-07-10 | 2015-11-18 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其制作方法 |
US9910523B2 (en) * | 2015-12-28 | 2018-03-06 | Lg Display Co., Ltd. | Display device with connection interface for common signal lines placed under planarization layer |
US9965122B2 (en) * | 2015-12-28 | 2018-05-08 | Lg Display Co., Ltd. | Display device with light shield |
US11908911B2 (en) * | 2019-05-16 | 2024-02-20 | Intel Corporation | Thin film transistors with raised source and drain contacts and process for forming such |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05273583A (ja) * | 1992-03-25 | 1993-10-22 | Sanyo Electric Co Ltd | 液晶表示装置 |
JPH0667210A (ja) * | 1992-08-20 | 1994-03-11 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス液晶表示装置とその作製方法 |
JPH07218930A (ja) * | 1994-02-04 | 1995-08-18 | Sanyo Electric Co Ltd | 液晶表示装置 |
JPH09153617A (ja) * | 1995-11-29 | 1997-06-10 | Nec Corp | 薄膜トランジスタアレイとその製造方法 |
JP2002055656A (ja) * | 2000-08-08 | 2002-02-20 | Casio Comput Co Ltd | 液晶表示装置 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2870075B2 (ja) * | 1989-12-27 | 1999-03-10 | カシオ計算機株式会社 | 薄膜トランジスタパネル及び液晶表示装置 |
JPH0815711A (ja) * | 1994-06-28 | 1996-01-19 | Kyocera Corp | アクティブマトリクス基板 |
KR100193653B1 (ko) * | 1995-11-20 | 1999-06-15 | 김영환 | 축적 캐패시터를 구비한 스태거 tft-lcd 및 그의 제조방법 |
US6809787B1 (en) * | 1998-12-11 | 2004-10-26 | Lg.Philips Lcd Co., Ltd. | Multi-domain liquid crystal display device |
KR100301855B1 (ko) | 1998-12-11 | 2001-09-26 | 구본준, 론 위라하디락사 | 멀티도메인 액정표시소자 |
US6791647B1 (en) * | 1999-02-24 | 2004-09-14 | Lg Philips Lcd Co., Ltd. | Multi-domain liquid crystal display device |
KR100357215B1 (ko) | 1999-06-21 | 2002-10-18 | 엘지.필립스 엘시디 주식회사 | 멀티도메인 액정표시소자 |
KR100748442B1 (ko) * | 2001-02-26 | 2007-08-10 | 엘지.필립스 엘시디 주식회사 | 수평전계 구동방식 액정 표시 장치용 어레이 기판 및 그제조 방법 |
KR100672637B1 (ko) * | 2002-07-12 | 2007-01-23 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 |
KR100497569B1 (ko) * | 2002-10-04 | 2005-06-28 | 엘지.필립스 엘시디 주식회사 | 횡전계방식 액정표시장치용 어레이기판 |
KR20040087591A (ko) * | 2003-04-08 | 2004-10-14 | 엘지.필립스 엘시디 주식회사 | 횡전계방식 액정표시소자 |
JP2004325953A (ja) * | 2003-04-25 | 2004-11-18 | Nec Lcd Technologies Ltd | 液晶表示装置 |
CN1567074A (zh) * | 2003-06-20 | 2005-01-19 | 友达光电股份有限公司 | 具有遮光结构的平面显示器及其制造方法 |
KR100752876B1 (ko) * | 2004-11-30 | 2007-08-29 | 가시오게산키 가부시키가이샤 | 수직배향형의 액정표시소자 |
JP2006276160A (ja) | 2005-03-28 | 2006-10-12 | Casio Comput Co Ltd | 液晶表示素子 |
JP4665571B2 (ja) * | 2005-03-17 | 2011-04-06 | セイコーエプソン株式会社 | 液晶装置、液晶装置の製造方法、及び電子機器 |
US7952099B2 (en) | 2006-04-21 | 2011-05-31 | Beijing Boe Optoelectronics Technology Co., Ltd. | Thin film transistor liquid crystal display array substrate |
CN100483232C (zh) | 2006-05-23 | 2009-04-29 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
KR100846974B1 (ko) | 2006-06-23 | 2008-07-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Tft lcd 어레이 기판 및 그 제조 방법 |
JP4740203B2 (ja) | 2006-08-04 | 2011-08-03 | 北京京東方光電科技有限公司 | 薄膜トランジスタlcd画素ユニットおよびその製造方法 |
JP4823989B2 (ja) | 2006-09-11 | 2011-11-24 | 北京京東方光電科技有限公司 | Tft―lcdアレイ基板及びその製造方法 |
CN100499138C (zh) | 2006-10-27 | 2009-06-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
CN100463193C (zh) | 2006-11-03 | 2009-02-18 | 北京京东方光电科技有限公司 | 一种tft阵列结构及其制造方法 |
CN100461432C (zh) | 2006-11-03 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种薄膜晶体管沟道结构 |
CN1959508A (zh) | 2006-11-10 | 2007-05-09 | 京东方科技集团股份有限公司 | 一种tft lcd阵列基板结构和制造方法 |
KR100917654B1 (ko) | 2006-11-10 | 2009-09-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 박막트랜지스터 액정 디스플레이 화소 구조 및 그 제조방법 |
US9052550B2 (en) | 2006-11-29 | 2015-06-09 | Beijing Boe Optoelectronics Technology Co., Ltd | Thin film transistor liquid crystal display |
CN100432770C (zh) | 2006-11-29 | 2008-11-12 | 北京京东方光电科技有限公司 | 一种液晶显示器装置 |
CN100524781C (zh) | 2006-12-13 | 2009-08-05 | 北京京东方光电科技有限公司 | 一种薄膜晶体管液晶显示器像素结构及其制造方法 |
CN1996133A (zh) | 2006-12-13 | 2007-07-11 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器及其制造方法 |
CN100461433C (zh) | 2007-01-04 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种tft阵列结构及其制造方法 |
CN100466182C (zh) | 2007-01-04 | 2009-03-04 | 北京京东方光电科技有限公司 | 金属导线、电极及薄膜晶体管阵列基板的制造方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05273583A (ja) * | 1992-03-25 | 1993-10-22 | Sanyo Electric Co Ltd | 液晶表示装置 |
JPH0667210A (ja) * | 1992-08-20 | 1994-03-11 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス液晶表示装置とその作製方法 |
JPH07218930A (ja) * | 1994-02-04 | 1995-08-18 | Sanyo Electric Co Ltd | 液晶表示装置 |
JPH09153617A (ja) * | 1995-11-29 | 1997-06-10 | Nec Corp | 薄膜トランジスタアレイとその製造方法 |
JP2002055656A (ja) * | 2000-08-08 | 2002-02-20 | Casio Comput Co Ltd | 液晶表示装置 |
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CN100442132C (zh) | 2008-12-10 |
US20080117347A1 (en) | 2008-05-22 |
JP4767242B2 (ja) | 2011-09-07 |
KR100970669B1 (ko) | 2010-07-15 |
US7808596B2 (en) | 2010-10-05 |
CN1987624A (zh) | 2007-06-27 |
KR20080045076A (ko) | 2008-05-22 |
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