JP2008108869A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】本発明に係るSiCを用いた半導体装置の製造方法は、SiC下地であるn+型SiC基板1およびn-型SiCエピ膜2の表面上にフォトレジストよりなる第1のイオン注入マスク4を形成する工程と、第1のイオン注入マスク4を介してSiC下地の表層部にイオン注入を行い、p型ベース領域5を形成する工程と、SiC下地および第1のイオン注入マスク4の表面上にフォトレジスト膜6を形成し加熱する工程と、フォトレジスト膜6を現像して架橋層からなる第2のイオン注入マスク7を第1のイオン注入マスク4の側壁に残す工程と、第1のイオン注入マスク4および第2のイオン注入マスク7を介してp型ベース領域5の表層部にイオン注入を行い、n+型ソース領域8を形成する工程とを備える。
【選択図】図4
Description
図1乃至図5は本発明の実施の形態1に係るSiCを用いたパワーMOSFETの製造方法を工程順に示す断面図であり、以下に製造方法を説明する。
実施の形態1ではチャネル長の長さと等しい架橋層の厚さを厚くする場合には、フォトレジスト膜6を形成した後に実施するリベーク工程の加熱時間を長くしたり、加熱温度を高くしたりする必要があった。しかし、酸性物質の拡散距離は加熱時間の平方根に比例するため、チャネル長を長くするには、長時間の加熱時間が必要となり、半導体製造工程のスループットが低下するという課題が生じた。また、加熱温度が高くなるとフォトレジスト膜6が現像液に対して溶解しにくくなり、第2のイオン注入マスク7の膜厚均一性が劣化するという現象が生じた。
本実施の形態では、フォトレジスト膜6の架橋層の厚さを厚くするもう一つの方法について説明する。
Claims (5)
- (a)SiC下地の表面上にフォトレジストよりなる第1のイオン注入マスクを形成する工程と、
(b)前記第1のイオン注入マスクを介して前記SiC下地の表層部に第1の電導型不純物のイオン注入を行い、第1の不純物領域を形成する工程と、
(c)前記SiC下地および前記第1のイオン注入マスクの表面上にフォトレジスト膜を形成し加熱する工程と、
(d)前記フォトレジスト膜を現像して架橋層からなる第2のイオン注入マスクを前記第1のイオン注入マスクの側壁に残す工程と、
(e)前記第1,第2のイオン注入マスクを介して前記第1の不純物領域の表層部に第2の電導型不純物のイオン注入を行い、第2の不純物領域を形成する工程と、を備える半導体装置の製造方法。 - 前記工程(c)は、
前記フォトレジスト膜を成膜する工程と、
前記成膜時の加熱温度と同じかそれよりも高い温度で加熱処理をする工程と、を備える請求項1記載の半導体装置の製造方法。 - 前記工程(c)において、
前記フォトレジスト膜にネガ型レジストを用いることを特徴とする請求項2記載の半導体装置の製造方法。 - 前記工程(a)において、
前記フォトレジストに化学増幅型レジストを用いることを特徴とする請求項1記載の半導体装置の製造方法。 - 前記工程(a)は、
前記第1のイオン注入マスクとして、下層側が上層側よりも幅の小さい複数層のフォトレジストの積層体を形成する工程を備える請求項1記載の半導体装置の製造方法。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2482308A2 (en) | 2011-01-31 | 2012-08-01 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
WO2013099785A1 (ja) | 2011-12-26 | 2013-07-04 | 東レ株式会社 | 感光性樹脂組成物および半導体素子の製造方法 |
KR20180099658A (ko) | 2015-12-29 | 2018-09-05 | 데이진 가부시키가이샤 | 감광성 수지 조성물 및 반도체 디바이스 제조 방법 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2014203881A1 (ja) | 2013-06-21 | 2017-02-23 | 富士電機株式会社 | 炭化珪素半導体素子の製造方法 |
Citations (4)
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JPH11283910A (ja) * | 1998-03-31 | 1999-10-15 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2002134379A (ja) * | 2000-10-19 | 2002-05-10 | Sony Corp | パターン形成方法 |
JP2006128191A (ja) * | 2004-10-26 | 2006-05-18 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
JP2006237511A (ja) * | 2005-02-28 | 2006-09-07 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
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2006
- 2006-10-25 JP JP2006289618A patent/JP5014734B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11283910A (ja) * | 1998-03-31 | 1999-10-15 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2002134379A (ja) * | 2000-10-19 | 2002-05-10 | Sony Corp | パターン形成方法 |
JP2006128191A (ja) * | 2004-10-26 | 2006-05-18 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
JP2006237511A (ja) * | 2005-02-28 | 2006-09-07 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US9030877B2 (en) | 2007-08-30 | 2015-05-12 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
EP2482308A2 (en) | 2011-01-31 | 2012-08-01 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
JP2012160509A (ja) * | 2011-01-31 | 2012-08-23 | Renesas Electronics Corp | 半導体装置の製造方法 |
US8569132B2 (en) | 2011-01-31 | 2013-10-29 | Renesas Electronics Corporation | Semiconductor device and manufacturing method thereof |
KR101928577B1 (ko) * | 2011-01-31 | 2018-12-12 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
WO2013099785A1 (ja) | 2011-12-26 | 2013-07-04 | 東レ株式会社 | 感光性樹脂組成物および半導体素子の製造方法 |
KR20140109866A (ko) | 2011-12-26 | 2014-09-16 | 도레이 카부시키가이샤 | 감광성 수지 조성물 및 반도체 소자의 제조 방법 |
TWI559091B (zh) * | 2011-12-26 | 2016-11-21 | 東麗股份有限公司 | 感光性樹脂組成物及半導體元件的製造方法 |
US9704724B2 (en) | 2011-12-26 | 2017-07-11 | Toray Industries, Inc. | Photosensitive resin composition and method for producing semiconductor device |
KR20180099658A (ko) | 2015-12-29 | 2018-09-05 | 데이진 가부시키가이샤 | 감광성 수지 조성물 및 반도체 디바이스 제조 방법 |
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