JP2008098601A - 改善されたカラークロストークを有するイメージセンサ - Google Patents
改善されたカラークロストークを有するイメージセンサ Download PDFInfo
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- JP2008098601A JP2008098601A JP2007103017A JP2007103017A JP2008098601A JP 2008098601 A JP2008098601 A JP 2008098601A JP 2007103017 A JP2007103017 A JP 2007103017A JP 2007103017 A JP2007103017 A JP 2007103017A JP 2008098601 A JP2008098601 A JP 2008098601A
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- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005036 potential barrier Methods 0.000 claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims abstract description 13
- 238000005468 ion implantation Methods 0.000 claims abstract description 8
- 239000002019 doping agent Substances 0.000 claims abstract 4
- 230000031700 light absorption Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000004298 light response Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
- Facsimile Heads (AREA)
Abstract
【解決手段】本発明のイメージセンサは、第1導電型の基板と、該第1導電型の基板にアレイされた第1ピクセル及び第2ピクセルと、該第2ピクセルに該当する前記基板内には配置されることなく、前記第1ピクセルに該当する前記基板内に配置されたポテンシャル障壁とを備える。ここで、前記第2ピクセルは、前記第1ピクセルに対応するカラーよりも相対的に長波長を有するカラーに対応するものである。また、前記ポテンシャル障壁は、高エネルギーのイオン注入によるドーパントを有し、前記P型エピタキシャル層のエピタキシャル成長中にイオンの注入又は拡散により形成されたドーパントを有する。
【選択図】図2
Description
202 緑色フィルタ
203 赤色フィルタ
208 トランスファゲート
209 N+型ドープ層
211 空乏領域
212 P型ドープ層
218 P+型基板
Claims (14)
- 第1導電型の基板と、
該第1導電型の基板にアレイされた第1ピクセル及び第2ピクセルと、
該第2ピクセルに該当する前記基板内には配置されることなく、前記第1ピクセルに該当する前記基板内に配置されたポテンシャル障壁と
を備えることを特徴とするイメージセンサ。 - 前記ポテンシャル障壁が、第1導電型のドープ層であることを特徴とする請求項1に記載のイメージセンサ。
- 前記第2ピクセルが、前記第1ピクセルに対応するカラーよりも相対的に長波長を有するカラーに対応するものであることを特徴とする請求項1に記載のイメージセンサ。
- 前記第2ピクセルが、赤色を感知する第1光吸収カラーフィルタを有し、
前記第1ピクセルが、緑色又は/及び青色を感知する第2光吸収カラーフィルタを有することを特徴とする請求項1に記載のイメージセンサ。 - 前記第1ピクセル及び第2ピクセルが、光生成電荷を電気的信号として読み出すための回路を共有することを特徴とする請求項1に記載のイメージセンサ。
- 前記第1ピクセル及び第2ピクセルが、光生成電荷を収集するために、それぞれフォトダイオードを備えることを特徴とする請求項1に記載のイメージセンサ。
- 前記第1ピクセル及び第2ピクセルが、光生成電荷を検出するために、フローティング拡散ノードを備えることを特徴とする請求項1に記載のイメージセンサ。
- 前記第1ピクセル及び第2ピクセルが、フローティング拡散ノードを共有することを特徴とする請求項7に記載のイメージセンサ。
- 前記第1ピクセル及び第2ピクセルが、前記共有されたフローティング拡散ノードに光生成電荷を伝達するために、それぞれトランスファゲートを備えることを特徴とする請求項8に記載のイメージセンサ。
- 前記フォトダイオードが、ピンドフォトダイオードであることを特徴とする請求項6に記載のイメージセンサ。
- 前記第1導電型の基板が、
前記基板上に成長したP型エピタキシャル層を備え、前記基板が、高濃度のP+型基板で形成されることを特徴とする請求項1に記載のイメージセンサ。 - 前記第1ピクセルが、光生成電荷を収集するためのフォトダイオードを備え、
前記ポテンシャル障壁が、前記フォトダイオードにより生成される空乏領域の下の前記P型エピタキシャル層に形成されることを特徴とする請求項11に記載のイメージセンサ。 - 前記ポテンシャル障壁が、高エネルギーのイオン注入によるドーパントを有することを特徴とする請求項1に記載のイメージセンサ。
- 前記ポテンシャル障壁が、前記P型エピタキシャル層のエピタキシャル成長中にイオンの注入又は拡散により形成されたドーパントを有することを特徴とする請求項11に記載のイメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0099759 | 2006-10-13 | ||
KR1020060099759A KR100821469B1 (ko) | 2006-10-13 | 2006-10-13 | 개선된 컬러 크로스토크를 갖는 소형 cmos 이미지 센서및 그 제조 방법 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012223228A Division JP2013030799A (ja) | 2006-10-13 | 2012-10-05 | 改善されたカラークロストークを有するイメージセンサ |
JP2013121406A Division JP5973958B2 (ja) | 2006-10-13 | 2013-06-10 | 改善されたカラークロストークを有するイメージセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008098601A true JP2008098601A (ja) | 2008-04-24 |
JP5508665B2 JP5508665B2 (ja) | 2014-06-04 |
Family
ID=39297606
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JP2007103017A Active JP5508665B2 (ja) | 2006-10-13 | 2007-04-10 | 改善されたカラークロストークを有するイメージセンサ |
JP2012223228A Pending JP2013030799A (ja) | 2006-10-13 | 2012-10-05 | 改善されたカラークロストークを有するイメージセンサ |
JP2013121406A Expired - Fee Related JP5973958B2 (ja) | 2006-10-13 | 2013-06-10 | 改善されたカラークロストークを有するイメージセンサ |
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JP2012223228A Pending JP2013030799A (ja) | 2006-10-13 | 2012-10-05 | 改善されたカラークロストークを有するイメージセンサ |
JP2013121406A Expired - Fee Related JP5973958B2 (ja) | 2006-10-13 | 2013-06-10 | 改善されたカラークロストークを有するイメージセンサ |
Country Status (5)
Country | Link |
---|---|
US (3) | US7928478B2 (ja) |
JP (3) | JP5508665B2 (ja) |
KR (1) | KR100821469B1 (ja) |
CN (1) | CN100565896C (ja) |
TW (1) | TWI342617B (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010232539A (ja) * | 2009-03-27 | 2010-10-14 | Canon Inc | 半導体装置の製造方法、及び光電変換装置の製造方法 |
JP2011112452A (ja) * | 2009-11-25 | 2011-06-09 | Olympus Corp | カラーセンサ |
JP2014168016A (ja) * | 2013-02-28 | 2014-09-11 | Nikon Corp | 撮像素子および撮像素子を備えた撮像装置 |
JP2015050389A (ja) * | 2013-09-03 | 2015-03-16 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2015162580A (ja) * | 2014-02-27 | 2015-09-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法、ならびに半導体装置の制御方法 |
US9437644B2 (en) | 2013-11-08 | 2016-09-06 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing same |
JP2017208574A (ja) * | 2017-08-17 | 2017-11-24 | 株式会社ニコン | 撮像素子および撮像素子を備えた撮像装置 |
WO2018139154A1 (ja) | 2017-01-30 | 2018-08-02 | 株式会社ニコン | 撮像素子および撮像素子の製造方法 |
JP2020065026A (ja) * | 2018-10-19 | 2020-04-23 | キヤノン株式会社 | 光電変換装置 |
Families Citing this family (14)
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US20090108385A1 (en) * | 2007-10-29 | 2009-04-30 | Micron Technology, Inc. | Method and apparatus for improving crosstalk and sensitivity in an imager |
KR101467509B1 (ko) * | 2008-07-25 | 2014-12-01 | 삼성전자주식회사 | 이미지 센서 및 이미지 센서 동작 방법 |
US7910961B2 (en) * | 2008-10-08 | 2011-03-22 | Omnivision Technologies, Inc. | Image sensor with low crosstalk and high red sensitivity |
EP2180513A1 (en) * | 2008-10-27 | 2010-04-28 | Stmicroelectronics SA | Near infrared/color image sensor |
US8389319B2 (en) * | 2009-07-31 | 2013-03-05 | Sri International | SOI-based CMOS imagers employing flash gate/chemisorption processing |
JP5471174B2 (ja) * | 2009-08-28 | 2014-04-16 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
GB2497084A (en) * | 2011-11-29 | 2013-06-05 | Hiok Nam Tay | Image sensor array comprising two diagonal blue filters and having shallow and deep photo detector regions. |
CN104465677B (zh) * | 2013-09-17 | 2017-12-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其形成方法 |
KR102174650B1 (ko) * | 2013-10-31 | 2020-11-05 | 삼성전자주식회사 | 이미지 센서 |
TW201614817A (en) * | 2014-10-03 | 2016-04-16 | Powerchip Technology Corp | Image sensor with deep well structure and fabrication method thereof |
US9515105B2 (en) | 2015-02-18 | 2016-12-06 | Semiconductor Components Industries, Llc | Dual photodiode image pixels with preferential blooming path |
KR101679598B1 (ko) * | 2016-01-04 | 2016-11-25 | 주식회사 동부하이텍 | 이미지 센서 |
US10672810B2 (en) * | 2017-10-31 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor with shallow trench edge doping |
CN110233961B (zh) * | 2019-07-30 | 2021-03-05 | Oppo广东移动通信有限公司 | 互补金属氧化物图像传感器及终端 |
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JP2006210919A (ja) | 2005-01-24 | 2006-08-10 | Samsung Electronics Co Ltd | 光の波長に応じて異なる厚さの埋没バリヤ層を具備するイメージセンサ及びその形成方法 |
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2006
- 2006-10-13 KR KR1020060099759A patent/KR100821469B1/ko active IP Right Grant
-
2007
- 2007-03-29 US US11/730,177 patent/US7928478B2/en not_active Expired - Fee Related
- 2007-04-04 TW TW096112169A patent/TWI342617B/zh not_active IP Right Cessation
- 2007-04-10 JP JP2007103017A patent/JP5508665B2/ja active Active
- 2007-06-22 CN CNB2007101230424A patent/CN100565896C/zh active Active
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2011
- 2011-03-31 US US13/077,104 patent/US8409903B2/en active Active
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2012
- 2012-10-05 JP JP2012223228A patent/JP2013030799A/ja active Pending
-
2013
- 2013-01-10 US US13/738,678 patent/US8709852B2/en active Active
- 2013-06-10 JP JP2013121406A patent/JP5973958B2/ja not_active Expired - Fee Related
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JPS5369526A (en) * | 1976-12-03 | 1978-06-21 | Hitachi Ltd | Solid pickup unit |
JP2005209695A (ja) * | 2004-01-20 | 2005-08-04 | Toshiba Corp | 固体撮像装置およびその製造方法 |
JP2006210919A (ja) | 2005-01-24 | 2006-08-10 | Samsung Electronics Co Ltd | 光の波長に応じて異なる厚さの埋没バリヤ層を具備するイメージセンサ及びその形成方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010232539A (ja) * | 2009-03-27 | 2010-10-14 | Canon Inc | 半導体装置の製造方法、及び光電変換装置の製造方法 |
JP2011112452A (ja) * | 2009-11-25 | 2011-06-09 | Olympus Corp | カラーセンサ |
US9055180B2 (en) | 2009-11-25 | 2015-06-09 | Olympus Corporation | Color sensor for accurately detecting color components |
JP2014168016A (ja) * | 2013-02-28 | 2014-09-11 | Nikon Corp | 撮像素子および撮像素子を備えた撮像装置 |
JP2015050389A (ja) * | 2013-09-03 | 2015-03-16 | キヤノン株式会社 | 固体撮像装置の製造方法 |
US9437644B2 (en) | 2013-11-08 | 2016-09-06 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing same |
JP2015162580A (ja) * | 2014-02-27 | 2015-09-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法、ならびに半導体装置の制御方法 |
US9894293B2 (en) | 2014-02-27 | 2018-02-13 | Renesas Electronics Corporation | Semiconductor device, method of manufacturing same, and method of controlling semiconductor device |
WO2018139154A1 (ja) | 2017-01-30 | 2018-08-02 | 株式会社ニコン | 撮像素子および撮像素子の製造方法 |
US10636819B2 (en) | 2017-01-30 | 2020-04-28 | Nikon Corporation | Imaging device and manufacturing method thereof |
JP2017208574A (ja) * | 2017-08-17 | 2017-11-24 | 株式会社ニコン | 撮像素子および撮像素子を備えた撮像装置 |
JP2020065026A (ja) * | 2018-10-19 | 2020-04-23 | キヤノン株式会社 | 光電変換装置 |
JP7271127B2 (ja) | 2018-10-19 | 2023-05-11 | キヤノン株式会社 | 光電変換装置 |
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US20130130429A1 (en) | 2013-05-23 |
US8709852B2 (en) | 2014-04-29 |
JP5973958B2 (ja) | 2016-08-23 |
JP2013219382A (ja) | 2013-10-24 |
TWI342617B (en) | 2011-05-21 |
TW200818476A (en) | 2008-04-16 |
US20080087922A1 (en) | 2008-04-17 |
CN100565896C (zh) | 2009-12-02 |
CN101162724A (zh) | 2008-04-16 |
JP2013030799A (ja) | 2013-02-07 |
US8409903B2 (en) | 2013-04-02 |
US20110177646A1 (en) | 2011-07-21 |
KR100821469B1 (ko) | 2008-04-11 |
JP5508665B2 (ja) | 2014-06-04 |
US7928478B2 (en) | 2011-04-19 |
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