JP5508665B2 - 改善されたカラークロストークを有するイメージセンサ - Google Patents
改善されたカラークロストークを有するイメージセンサ Download PDFInfo
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- JP5508665B2 JP5508665B2 JP2007103017A JP2007103017A JP5508665B2 JP 5508665 B2 JP5508665 B2 JP 5508665B2 JP 2007103017 A JP2007103017 A JP 2007103017A JP 2007103017 A JP2007103017 A JP 2007103017A JP 5508665 B2 JP5508665 B2 JP 5508665B2
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- 238000005036 potential barrier Methods 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 18
- 230000004044 response Effects 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000004298 light response Effects 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
- Facsimile Heads (AREA)
Description
202 緑色フィルタ
203 赤色フィルタ
208 トランスファゲート
209 N+型ドープ層
211 空乏領域
212 P型ドープ層
218 P+型基板
Claims (13)
- 第1の色を受け取る第1フォトダイオードを備える第1ピクセルと、
前記第1の色よりも長波長の第2の色を受け取る第2フォトダイオードを備える第2ピクセルと、
前記第1フォトダイオード及び前記第2フォトダイオードの下に備わる、第1導電型のシリコン基板と、
前記第1フォトダイオードの下に備わるポテンシャル障壁と、
エピタキシャル層と、
を備え、
前記ポテンシャル障壁は、前記第1導電型のドープ層であり、
前記エピタキシャル層は、
前記ポテンシャル障壁と前記第1フォトダイオードとの間の第1領域と、
前記ポテンシャル障壁と前記シリコン基板との間の第2領域と、を含み、
前記第1領域は、前記第1の色の光子を受け、これに応じて第1電子を生じさせて、この第1電子を前記第1フォトダイオードに移動させ、
前記第2領域は、前記第2の色の光子を受け、これに応じて第2電子を生じさせて、この第2電子を前記第2フォトダイオードに移動させ、
前記第2領域及び前記ポテンシャル障壁は、前記第2電子を、前記ポテンシャル障壁を迂回させて、前記第2フォトダイオードに向かわせる、
イメージセンサ。 - 前記第2の色の光子は、赤色の光子を含む、請求項1に記載のイメージセンサ。
- 前記第1の色の光子は、青色の光子及び緑色の光子のうち少なくとも一方を含む、請求項1又は2に記載のイメージセンサ。
- 前記シリコン基板は、高濃度のP+型基板を含む、請求項1〜3のいずれか1つに記載のイメージセンサ。
- 前記第1及び第2フォトダイオードは、ピンドフォトダイオードを含む、請求項1〜4のいずれか1つに記載のイメージセンサ。
- 前記ポテンシャル障壁は、P型ドープ層を含む、請求項1〜5のいずれか1つに記載のイメージセンサ。
- 前記第1の色よりも短波長の第3の色を受け取る第3フォトダイオードを備える第3ピクセルを更に含んで構成され、
前記シリコン基板は、前記第3フォトダイオードの下に位置し、
前記ポテンシャル障壁は、前記第3フォトダイオードの下に位置し、
前記第1領域は、前記ポテンシャル障壁と前記第3フォトダイオードとの間に位置し、
前記第1領域は、前記第3の色の光子を受け、これに応じて第3電子を生じさせて、この第3電子を前記第3フォトダイオードに移動させる、
請求項1〜6のいずれか1つに記載のイメージセンサ。 - 前記第1フォトダイオードと前記ポテンシャル障壁との間の深さが、前記第3フォトダイオードと前記ポテンシャル障壁との間の深さよりも大きい、請求項7に記載のイメージセンサ。
- 第1の色を受け取る第1フォトダイオードと、
前記第1の色よりも長波長の第2の色を受け取る第2フォトダイオードと、
前記第1の色よりも短波長の第3の色を受け取る第3フォトダイオードと、
上面を有する、所定の厚さのポテンシャル障壁と、
第1導電型のシリコン基板と、
エピタキシャル層と、
を含んで構成され、
前記ポテンシャル障壁は、前記第1導電型のドープ層であり、その上面は、前記第1フォトダイオード及び前記第3フォトダイオードの下において所定の深さに位置し、前記ポテンシャル障壁は、前記第1フォトダイオード及び前記第3フォトダイオードの下にそれぞれ配置された対向する第1端部及び第2端部と、前記第1端部及び前記第2端部を相互接続しており、前記第1フォトダイオード及び前記第3フォトダイオードの下に配置された中間部とを有し、前記ポテンシャル障壁は、前記第2フォトダイオードの下に位置しないものであり、
前記ポテンシャル障壁と前記第1フォトダイオードとの間にある前記エピタキシャル層の領域は、前記第1の色の光子を受け、これに応じて第1電子を生じさせて、この第1電子を前記第1フォトダイオードに移動させ、
前記ポテンシャル障壁と前記第3フォトダイオードとの間にある前記エピタキシャル層の領域は、前記第3の色の光子を受け、これに応じて第3電子を生じさせて、この第3電子を前記第3フォトダイオードに移動させ、
前記ポテンシャル障壁と前記シリコン基板との間にある前記エピタキシャル層の領域は、前記第2の色の光子を受け、これに応じて第2電子を生じさせて、この第2電子を前記第2フォトダイオードに移動させ、
前記ポテンシャル障壁と前記シリコン基板との間にある前記エピタキシャル層の領域及び前記ポテンシャル障壁は、前記第2電子を、前記ポテンシャル障壁を迂回させて、前記第2フォトダイオードに向かわせ、
前記シリコン基板は、前記第1フォトダイオード、前記第2フォトダイオード及び前記第3フォトダイオードの下において所定の深さに位置し、
前記シリコン基板の深さは、前記第1フォトダイオード、前記第2フォトダイオード及び前記第3フォトダイオードの下における前記ポテンシャル障壁の深さとその厚さとの合計よりも大きい、
イメージセンサ。 - 前記第1及び第2フォトダイオードは、ピンドフォトダイオードを含む、請求項9に記載のイメージセンサ。
- 前記ポテンシャル障壁は、P型ドープ層を含む、請求項9又は10に記載のイメージセンサ。
- 前記第1フォトダイオード及び前記第3フォトダイオードは、緑色ピクセル及び青色ピクセルにそれぞれ備わる、請求項9〜11のいずれか1つに記載のイメージセンサ。
- 前記第2フォトダイオードは、赤色ピクセルに備わる、請求項9〜12のいずれか1つに記載のイメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060099759A KR100821469B1 (ko) | 2006-10-13 | 2006-10-13 | 개선된 컬러 크로스토크를 갖는 소형 cmos 이미지 센서및 그 제조 방법 |
KR10-2006-0099759 | 2006-10-13 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012223228A Division JP2013030799A (ja) | 2006-10-13 | 2012-10-05 | 改善されたカラークロストークを有するイメージセンサ |
JP2013121406A Division JP5973958B2 (ja) | 2006-10-13 | 2013-06-10 | 改善されたカラークロストークを有するイメージセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008098601A JP2008098601A (ja) | 2008-04-24 |
JP5508665B2 true JP5508665B2 (ja) | 2014-06-04 |
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JP2007103017A Active JP5508665B2 (ja) | 2006-10-13 | 2007-04-10 | 改善されたカラークロストークを有するイメージセンサ |
JP2012223228A Pending JP2013030799A (ja) | 2006-10-13 | 2012-10-05 | 改善されたカラークロストークを有するイメージセンサ |
JP2013121406A Expired - Fee Related JP5973958B2 (ja) | 2006-10-13 | 2013-06-10 | 改善されたカラークロストークを有するイメージセンサ |
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JP2012223228A Pending JP2013030799A (ja) | 2006-10-13 | 2012-10-05 | 改善されたカラークロストークを有するイメージセンサ |
JP2013121406A Expired - Fee Related JP5973958B2 (ja) | 2006-10-13 | 2013-06-10 | 改善されたカラークロストークを有するイメージセンサ |
Country Status (5)
Country | Link |
---|---|
US (3) | US7928478B2 (ja) |
JP (3) | JP5508665B2 (ja) |
KR (1) | KR100821469B1 (ja) |
CN (1) | CN100565896C (ja) |
TW (1) | TWI342617B (ja) |
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US20090108385A1 (en) * | 2007-10-29 | 2009-04-30 | Micron Technology, Inc. | Method and apparatus for improving crosstalk and sensitivity in an imager |
KR101467509B1 (ko) * | 2008-07-25 | 2014-12-01 | 삼성전자주식회사 | 이미지 센서 및 이미지 센서 동작 방법 |
US7910961B2 (en) * | 2008-10-08 | 2011-03-22 | Omnivision Technologies, Inc. | Image sensor with low crosstalk and high red sensitivity |
EP2180513A1 (en) * | 2008-10-27 | 2010-04-28 | Stmicroelectronics SA | Near infrared/color image sensor |
JP5594978B2 (ja) * | 2009-03-27 | 2014-09-24 | キヤノン株式会社 | 半導体装置の製造方法、及び光電変換装置の製造方法 |
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JP5471174B2 (ja) * | 2009-08-28 | 2014-04-16 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
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GB2497084A (en) * | 2011-11-29 | 2013-06-05 | Hiok Nam Tay | Image sensor array comprising two diagonal blue filters and having shallow and deep photo detector regions. |
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CN104465677B (zh) * | 2013-09-17 | 2017-12-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其形成方法 |
KR102174650B1 (ko) * | 2013-10-31 | 2020-11-05 | 삼성전자주식회사 | 이미지 센서 |
JP6302216B2 (ja) | 2013-11-08 | 2018-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2015162580A (ja) * | 2014-02-27 | 2015-09-07 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法、ならびに半導体装置の制御方法 |
TW201614817A (en) * | 2014-10-03 | 2016-04-16 | Powerchip Technology Corp | Image sensor with deep well structure and fabrication method thereof |
US9515105B2 (en) | 2015-02-18 | 2016-12-06 | Semiconductor Components Industries, Llc | Dual photodiode image pixels with preferential blooming path |
KR101679598B1 (ko) * | 2016-01-04 | 2016-11-25 | 주식회사 동부하이텍 | 이미지 센서 |
EP3576150B1 (en) * | 2017-01-30 | 2021-11-03 | Nikon Corporation | Image-capture element and method for manufacturing image-capture element |
JP2017208574A (ja) * | 2017-08-17 | 2017-11-24 | 株式会社ニコン | 撮像素子および撮像素子を備えた撮像装置 |
US10672810B2 (en) * | 2017-10-31 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor with shallow trench edge doping |
JP7271127B2 (ja) * | 2018-10-19 | 2023-05-11 | キヤノン株式会社 | 光電変換装置 |
CN110233961B (zh) * | 2019-07-30 | 2021-03-05 | Oppo广东移动通信有限公司 | 互补金属氧化物图像传感器及终端 |
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JP4857773B2 (ja) * | 2006-01-16 | 2012-01-18 | 株式会社ニコン | 固体撮像素子及びその製造方法 |
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2006
- 2006-10-13 KR KR1020060099759A patent/KR100821469B1/ko active IP Right Grant
-
2007
- 2007-03-29 US US11/730,177 patent/US7928478B2/en not_active Expired - Fee Related
- 2007-04-04 TW TW096112169A patent/TWI342617B/zh not_active IP Right Cessation
- 2007-04-10 JP JP2007103017A patent/JP5508665B2/ja active Active
- 2007-06-22 CN CNB2007101230424A patent/CN100565896C/zh not_active Expired - Fee Related
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2011
- 2011-03-31 US US13/077,104 patent/US8409903B2/en active Active
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2012
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Publication number | Publication date |
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US20110177646A1 (en) | 2011-07-21 |
KR100821469B1 (ko) | 2008-04-11 |
US20130130429A1 (en) | 2013-05-23 |
JP2008098601A (ja) | 2008-04-24 |
CN100565896C (zh) | 2009-12-02 |
JP2013030799A (ja) | 2013-02-07 |
JP2013219382A (ja) | 2013-10-24 |
US8409903B2 (en) | 2013-04-02 |
US20080087922A1 (en) | 2008-04-17 |
TW200818476A (en) | 2008-04-16 |
US8709852B2 (en) | 2014-04-29 |
CN101162724A (zh) | 2008-04-16 |
JP5973958B2 (ja) | 2016-08-23 |
US7928478B2 (en) | 2011-04-19 |
TWI342617B (en) | 2011-05-21 |
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