JP2008091880A - マイクロおよびナノ構造の作製方法 - Google Patents

マイクロおよびナノ構造の作製方法 Download PDF

Info

Publication number
JP2008091880A
JP2008091880A JP2007216427A JP2007216427A JP2008091880A JP 2008091880 A JP2008091880 A JP 2008091880A JP 2007216427 A JP2007216427 A JP 2007216427A JP 2007216427 A JP2007216427 A JP 2007216427A JP 2008091880 A JP2008091880 A JP 2008091880A
Authority
JP
Japan
Prior art keywords
layer
etching
etching process
particles
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007216427A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008091880A5 (enExample
Inventor
Benzhong Wang
ベンゾン ワン
Chua Soo Jin
スー ジン チュア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agency for Science Technology and Research Singapore
Original Assignee
Agency for Science Technology and Research Singapore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency for Science Technology and Research Singapore filed Critical Agency for Science Technology and Research Singapore
Publication of JP2008091880A publication Critical patent/JP2008091880A/ja
Publication of JP2008091880A5 publication Critical patent/JP2008091880A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00365—Production of microlenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24149—Honeycomb-like
    • Y10T428/24165—Hexagonally shaped cavities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24893—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24893—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
    • Y10T428/24909—Free metal or mineral containing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Ophthalmology & Optometry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP2007216427A 2006-08-22 2007-08-22 マイクロおよびナノ構造の作製方法 Pending JP2008091880A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200605650-1A SG140481A1 (en) 2006-08-22 2006-08-22 A method for fabricating micro and nano structures

Publications (2)

Publication Number Publication Date
JP2008091880A true JP2008091880A (ja) 2008-04-17
JP2008091880A5 JP2008091880A5 (enExample) 2012-10-18

Family

ID=39112385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007216427A Pending JP2008091880A (ja) 2006-08-22 2007-08-22 マイクロおよびナノ構造の作製方法

Country Status (4)

Country Link
US (2) US7833425B2 (enExample)
JP (1) JP2008091880A (enExample)
KR (1) KR20080018137A (enExample)
SG (1) SG140481A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146522A (ja) * 2010-01-14 2011-07-28 Panasonic Corp 基板の加工方法
JP2011526075A (ja) * 2008-06-26 2011-09-29 スリーエム イノベイティブ プロパティズ カンパニー 光抽出器の作製方法
JP2011249765A (ja) * 2010-05-27 2011-12-08 Qinghua Univ 三次元ナノ構造体アレイ及びその製造方法
JP2011258923A (ja) * 2010-06-04 2011-12-22 Qinghua Univ 発光ダイオード
WO2012141169A1 (ja) * 2011-04-15 2012-10-18 三菱化学株式会社 窒化物系発光ダイオード素子とその製造方法
JP2013511151A (ja) * 2009-11-17 2013-03-28 スリーエム イノベイティブ プロパティズ カンパニー 光吸収性基板の表面の微細構造化
US8501020B2 (en) 2010-05-27 2013-08-06 Tsinghua University Method for making three-dimensional nano-structure array
JP2015026826A (ja) * 2013-06-17 2015-02-05 王子ホールディングス株式会社 半導体発光素子用基板、半導体発光素子、半導体発光素子用基板の製造方法、および、半導体発光素子の製造方法
KR101795020B1 (ko) 2010-07-30 2017-11-07 엘지이노텍 주식회사 표면적 향상 나노 임프린트용 스탬프 및 그 제조 방법
JP2018136576A (ja) * 2014-08-29 2018-08-30 国立研究開発法人物質・材料研究機構 電磁波吸収及び輻射材料及びその製造方法並びに赤外線源

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG140481A1 (en) * 2006-08-22 2008-03-28 Agency Science Tech & Res A method for fabricating micro and nano structures
JP2011526074A (ja) * 2008-06-26 2011-09-29 スリーエム イノベイティブ プロパティズ カンパニー 半導体光変換構成体
KR20110031957A (ko) * 2008-06-26 2011-03-29 쓰리엠 이노베이티브 프로퍼티즈 컴파니 광 변환 구조물
US20110101402A1 (en) * 2008-06-26 2011-05-05 Jun-Ying Zhang Semiconductor light converting construction
TWI449658B (zh) * 2010-06-07 2014-08-21 Hon Hai Prec Ind Co Ltd 三維奈米結構陣列之製備方法
CN102097518B (zh) * 2010-12-15 2012-12-19 清华大学 太阳能电池及其制备方法
KR101340845B1 (ko) * 2011-01-13 2013-12-13 한국기계연구원 기능성 표면의 제조방법
US9515223B2 (en) 2012-08-21 2016-12-06 Oji Holdings Corporation Semiconductor light emitting device substrate including an uneven structure having convex portions, and a flat surface therebetween
US8852974B2 (en) 2012-12-06 2014-10-07 Epistar Corporation Semiconductor light-emitting device and method for manufacturing the same
CN103107251A (zh) * 2013-02-27 2013-05-15 中国科学院半导体研究所 一种具有六棱锥形p型氮化镓的发光二极管制备方法
TWI548113B (zh) 2014-03-11 2016-09-01 國立臺灣大學 半導體發光元件及其製造方法
CN107293625B (zh) * 2017-06-19 2019-02-22 南京大学 AlGaN异质结纳米柱阵列发光器件及其制备方法
JP6841198B2 (ja) * 2017-09-28 2021-03-10 豊田合成株式会社 発光素子の製造方法
US11037794B2 (en) * 2018-09-26 2021-06-15 The Regents Of The University Of California Methods for multiple-patterning nanosphere lithography for fabrication of periodic three-dimensional hierarchical nanostructures

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136460A (ja) * 1991-06-19 1993-06-01 Matsushita Electric Ind Co Ltd マイクロレンズ形成方法
JPH10320772A (ja) * 1997-05-22 1998-12-04 Hitachi Ltd 高密度磁気記録媒体作製法およびこれによる高密度磁気記録媒体
JP2000106454A (ja) * 1998-07-28 2000-04-11 Interuniv Micro Electronica Centrum Vzw 高効率で放射線を発するデバイスおよびそのようなデバイスの製造方法
JP2003218383A (ja) * 2002-01-18 2003-07-31 Toshiba Corp 半導体発光素子及びその製造方法
WO2005104253A1 (en) * 2004-04-01 2005-11-03 Cree, Inc. Laser patterning of light emitting devices and patterned light emitting devices
JP2006512781A (ja) * 2002-12-30 2006-04-13 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング ボディの表面を粗面化する方法及びオプトエレクトロニクスデバイス
JP2006261659A (ja) * 2005-02-18 2006-09-28 Sumitomo Chemical Co Ltd 半導体発光素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6504180B1 (en) 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
US6350388B1 (en) 1999-08-19 2002-02-26 Micron Technology, Inc. Method for patterning high density field emitter tips
DE19943406C2 (de) 1999-09-10 2001-07-19 Osram Opto Semiconductors Gmbh Lichtemissionsdiode mit Oberflächenstrukturierung
JP3802424B2 (ja) 2002-01-15 2006-07-26 株式会社東芝 半導体発光素子及びその製造方法
SG140481A1 (en) 2006-08-22 2008-03-28 Agency Science Tech & Res A method for fabricating micro and nano structures

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136460A (ja) * 1991-06-19 1993-06-01 Matsushita Electric Ind Co Ltd マイクロレンズ形成方法
JPH10320772A (ja) * 1997-05-22 1998-12-04 Hitachi Ltd 高密度磁気記録媒体作製法およびこれによる高密度磁気記録媒体
JP2000106454A (ja) * 1998-07-28 2000-04-11 Interuniv Micro Electronica Centrum Vzw 高効率で放射線を発するデバイスおよびそのようなデバイスの製造方法
JP2003218383A (ja) * 2002-01-18 2003-07-31 Toshiba Corp 半導体発光素子及びその製造方法
JP2006512781A (ja) * 2002-12-30 2006-04-13 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング ボディの表面を粗面化する方法及びオプトエレクトロニクスデバイス
WO2005104253A1 (en) * 2004-04-01 2005-11-03 Cree, Inc. Laser patterning of light emitting devices and patterned light emitting devices
JP2006261659A (ja) * 2005-02-18 2006-09-28 Sumitomo Chemical Co Ltd 半導体発光素子の製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011526075A (ja) * 2008-06-26 2011-09-29 スリーエム イノベイティブ プロパティズ カンパニー 光抽出器の作製方法
JP2013511151A (ja) * 2009-11-17 2013-03-28 スリーエム イノベイティブ プロパティズ カンパニー 光吸収性基板の表面の微細構造化
US9034684B2 (en) 2009-11-17 2015-05-19 3M Innovative Properties Company Texturing surface of light-absorbing substrate
JP2011146522A (ja) * 2010-01-14 2011-07-28 Panasonic Corp 基板の加工方法
JP2011249765A (ja) * 2010-05-27 2011-12-08 Qinghua Univ 三次元ナノ構造体アレイ及びその製造方法
US8501020B2 (en) 2010-05-27 2013-08-06 Tsinghua University Method for making three-dimensional nano-structure array
JP2011258923A (ja) * 2010-06-04 2011-12-22 Qinghua Univ 発光ダイオード
US8487320B2 (en) 2010-06-04 2013-07-16 Tsinghua University Light emitting diode
KR101795020B1 (ko) 2010-07-30 2017-11-07 엘지이노텍 주식회사 표면적 향상 나노 임프린트용 스탬프 및 그 제조 방법
JP2012231122A (ja) * 2011-04-15 2012-11-22 Mitsubishi Chemicals Corp 窒化物系発光ダイオード素子とその製造方法
WO2012141169A1 (ja) * 2011-04-15 2012-10-18 三菱化学株式会社 窒化物系発光ダイオード素子とその製造方法
JP2015026826A (ja) * 2013-06-17 2015-02-05 王子ホールディングス株式会社 半導体発光素子用基板、半導体発光素子、半導体発光素子用基板の製造方法、および、半導体発光素子の製造方法
JP2018136576A (ja) * 2014-08-29 2018-08-30 国立研究開発法人物質・材料研究機構 電磁波吸収及び輻射材料及びその製造方法並びに赤外線源

Also Published As

Publication number Publication date
US20080047929A1 (en) 2008-02-28
SG140481A1 (en) 2008-03-28
US8211321B2 (en) 2012-07-03
KR20080018137A (ko) 2008-02-27
US20110095324A1 (en) 2011-04-28
US7833425B2 (en) 2010-11-16

Similar Documents

Publication Publication Date Title
JP2008091880A (ja) マイクロおよびナノ構造の作製方法
TWI420690B (zh) 基板的微細加工方法、基板的製造方法及發光元件
TWI543395B (zh) 圖案化光電基板及其製作方法
KR101250450B1 (ko) 마이크로 나노 조합구조의 제조방법 및 마이크로 나노 조합구조가 집적된 광소자의 제조방법
TWI601310B (zh) 奈米線發光二極體結構及其製造方法
CN1983657B (zh) 制造具有纳米结构的衬底的方法、发光器件及其制造方法
US8466479B2 (en) Light emitting diodes (LEDs) with improved light extraction by roughening
KR101681242B1 (ko) 발광다이오드의 제조방법 및 이에 의해 제조된 발광다이오드
US9172000B2 (en) Semiconductor light emitting device and method of manufacturing the same
JP2007519214A (ja) 高輝度の窒化物マイクロ発光ダイオード及びその製造方法
TW201515091A (zh) 藉由乾式蝕刻移除３ｄ半導體結構之方法
TW201838204A (zh) 具有氮化銦鎵模板層的紅色發光二極體及其製造方法
US20090026471A1 (en) Light-scattering structure, light emitting device comprising the same and method of forming the same
TW200834987A (en) Surface textured LEDs and method for making the same
JP4481894B2 (ja) 半導体発光装置及びその製造方法
TW201515269A (zh) 用於平整化及界定奈米線裝置之活化區的絕緣層
KR101219120B1 (ko) 고효율 ｌｅｄ 소자 및 그의 제조방법
JP2010067928A (ja) 半導体発光素子及びその製造方法
US9059355B2 (en) Stopping an etch in a planar layer after etching a 3D structure
KR101221075B1 (ko) 나노 임프린트를 이용한 질화갈륨계 발광 다이오드 제조방법과 이를 통해 제조된 발광 다이오드 소자
TWI671260B (zh) 具有提升發光效率之圖案化光電基板、發光二極體及其製作方法
US7811846B2 (en) Semiconductor devices grown in spherical cavity arrays and its preparation method
Danner et al. Fabrication of efficient light-emitting diodes with a self-assembled photonic crystal array of polystyrene nanoparticles
KR20250104641A (ko) Led 소자의 제조 방법
KR20130016179A (ko) 마이크로 나노 조합구조의 제조방법 및 마이크로 나노 조합구조가 집적된 광소자의 제조방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100526

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120509

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120515

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120815

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120820

A524 Written submission of copy of amendment under section 19 (pct)

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20120905

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130312

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130612

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130617

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130917