JP2008091824A5 - - Google Patents

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Publication number
JP2008091824A5
JP2008091824A5 JP2006273865A JP2006273865A JP2008091824A5 JP 2008091824 A5 JP2008091824 A5 JP 2008091824A5 JP 2006273865 A JP2006273865 A JP 2006273865A JP 2006273865 A JP2006273865 A JP 2006273865A JP 2008091824 A5 JP2008091824 A5 JP 2008091824A5
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JP
Japan
Prior art keywords
film
manufacturing
semiconductor device
pattern
forming
Prior art date
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Application number
JP2006273865A
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English (en)
Japanese (ja)
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JP4237216B2 (ja
JP2008091824A (ja
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Publication date
Application filed filed Critical
Priority to JP2006273865A priority Critical patent/JP4237216B2/ja
Priority claimed from JP2006273865A external-priority patent/JP4237216B2/ja
Priority to US11/600,071 priority patent/US7462566B2/en
Publication of JP2008091824A publication Critical patent/JP2008091824A/ja
Publication of JP2008091824A5 publication Critical patent/JP2008091824A5/ja
Application granted granted Critical
Publication of JP4237216B2 publication Critical patent/JP4237216B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006273865A 2006-10-05 2006-10-05 半導体装置の製造方法 Active JP4237216B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006273865A JP4237216B2 (ja) 2006-10-05 2006-10-05 半導体装置の製造方法
US11/600,071 US7462566B2 (en) 2006-10-05 2006-11-16 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006273865A JP4237216B2 (ja) 2006-10-05 2006-10-05 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2008091824A JP2008091824A (ja) 2008-04-17
JP2008091824A5 true JP2008091824A5 (enExample) 2008-08-07
JP4237216B2 JP4237216B2 (ja) 2009-03-11

Family

ID=39275280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006273865A Active JP4237216B2 (ja) 2006-10-05 2006-10-05 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US7462566B2 (enExample)
JP (1) JP4237216B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091825A (ja) * 2006-10-05 2008-04-17 Nec Electronics Corp 半導体装置の製造方法
KR20090077511A (ko) * 2008-01-11 2009-07-15 삼성전자주식회사 콘택홀 형성 방법 및 이를 포함하는 반도체 소자의 제조방법.
JP2009283863A (ja) * 2008-05-26 2009-12-03 Renesas Technology Corp 半導体装置の製造方法
JP5661524B2 (ja) 2011-03-22 2015-01-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP2014239191A (ja) * 2013-06-10 2014-12-18 富士通セミコンダクター株式会社 半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257593B2 (ja) 1999-02-05 2002-02-18 日本電気株式会社 半導体装置の製造方法
DE19958904C2 (de) * 1999-12-07 2002-01-24 Infineon Technologies Ag Verfahren zur Herstellung einer Hartmaske auf einem Substrat
KR100669862B1 (ko) 2000-11-13 2007-01-17 삼성전자주식회사 반도체 장치의 미세패턴 형성방법
US6656811B2 (en) * 2001-12-21 2003-12-02 Texas Instruments Incorporated Carbide emitter mask etch stop
JP4342767B2 (ja) 2002-04-23 2009-10-14 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4193438B2 (ja) * 2002-07-30 2008-12-10 ソニー株式会社 半導体装置の製造方法
JP2004133384A (ja) 2002-08-14 2004-04-30 Sony Corp レジスト用剥離剤組成物及び半導体装置の製造方法
JP4057972B2 (ja) 2003-07-25 2008-03-05 富士通株式会社 半導体装置の製造方法
JP2005086119A (ja) 2003-09-11 2005-03-31 Matsushita Electric Ind Co Ltd 微細パターンの形成方法
JP2005203672A (ja) * 2004-01-19 2005-07-28 Sony Corp 半導体装置の製造方法
US7115993B2 (en) * 2004-01-30 2006-10-03 Tokyo Electron Limited Structure comprising amorphous carbon film and method of forming thereof
JP2006013190A (ja) * 2004-06-28 2006-01-12 Rohm Co Ltd 半導体装置の製造方法
US7407851B2 (en) * 2006-03-22 2008-08-05 Miller Gayle W DMOS device with sealed channel processing

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