JP2005530338A5 - - Google Patents

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Publication number
JP2005530338A5
JP2005530338A5 JP2004513847A JP2004513847A JP2005530338A5 JP 2005530338 A5 JP2005530338 A5 JP 2005530338A5 JP 2004513847 A JP2004513847 A JP 2004513847A JP 2004513847 A JP2004513847 A JP 2004513847A JP 2005530338 A5 JP2005530338 A5 JP 2005530338A5
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JP
Japan
Prior art keywords
layer
pattern
substrate
forming
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004513847A
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English (en)
Japanese (ja)
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JP2005530338A (ja
JP4575154B2 (ja
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Publication date
Priority claimed from US10/174,464 external-priority patent/US6852454B2/en
Application filed filed Critical
Publication of JP2005530338A publication Critical patent/JP2005530338A/ja
Publication of JP2005530338A5 publication Critical patent/JP2005530338A5/ja
Application granted granted Critical
Publication of JP4575154B2 publication Critical patent/JP4575154B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004513847A 2002-06-18 2003-06-03 多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法 Expired - Fee Related JP4575154B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/174,464 US6852454B2 (en) 2002-06-18 2002-06-18 Multi-tiered lithographic template and method of formation and use
PCT/US2003/017549 WO2003107094A1 (en) 2002-06-18 2003-06-03 Multi-tiered lithographic template

Publications (3)

Publication Number Publication Date
JP2005530338A JP2005530338A (ja) 2005-10-06
JP2005530338A5 true JP2005530338A5 (enExample) 2006-07-20
JP4575154B2 JP4575154B2 (ja) 2010-11-04

Family

ID=29733600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004513847A Expired - Fee Related JP4575154B2 (ja) 2002-06-18 2003-06-03 多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法

Country Status (6)

Country Link
US (1) US6852454B2 (enExample)
JP (1) JP4575154B2 (enExample)
KR (1) KR101018519B1 (enExample)
CN (1) CN1662852B (enExample)
AU (1) AU2003243384A1 (enExample)
WO (1) WO2003107094A1 (enExample)

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US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
CN101505974A (zh) * 2005-09-07 2009-08-12 凸版光掩膜公司 用来制作双波纹结构的光掩模及其形成方法
JP4889316B2 (ja) * 2005-09-12 2012-03-07 学校法人東京理科大学 ３次元構造物の製造方法、３次元構造物、光学素子、ステンシルマスク、微細加工物の製造方法、及び微細パターン成形品の製造方法。
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US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US20070148558A1 (en) * 2005-12-27 2007-06-28 Shahzad Akbar Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto
JP2007266193A (ja) * 2006-03-28 2007-10-11 Dainippon Printing Co Ltd インプリント用の型部材とその作製方法、およびこれらに用いられる積層基板
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US7985530B2 (en) * 2006-09-19 2011-07-26 Molecular Imprints, Inc. Etch-enhanced technique for lift-off patterning
JP5009649B2 (ja) 2007-02-28 2012-08-22 Ｈｏｙａ株式会社 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法
US8142702B2 (en) * 2007-06-18 2012-03-27 Molecular Imprints, Inc. Solvent-assisted layer formation for imprint lithography
US8753974B2 (en) * 2007-06-20 2014-06-17 Micron Technology, Inc. Charge dissipation of cavities
WO2009036215A2 (en) * 2007-09-14 2009-03-19 Qualcomm Mems Technologies, Inc. Etching processes used in mems production
JP5161017B2 (ja) 2007-09-27 2013-03-13 Ｈｏｙａ株式会社 マスクブランク、マスクブランクの製造方法、及びインプリント用モールドの製造方法
DE102007048807A1 (de) * 2007-10-10 2009-04-16 Micronas Gmbh Brennstoffzelle und Verfahren zum Herstellen einer Brennstoffzelle
US7836420B2 (en) * 2007-10-22 2010-11-16 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system with assist feature
TWI493598B (zh) * 2007-10-26 2015-07-21 應用材料股份有限公司 利用光阻模板遮罩的倍頻方法
JP5343345B2 (ja) * 2007-10-31 2013-11-13 凸版印刷株式会社 パターン形成方法、インプリントモールド、フォトマスク
US7906274B2 (en) * 2007-11-21 2011-03-15 Molecular Imprints, Inc. Method of creating a template employing a lift-off process
US8114331B2 (en) 2008-01-02 2012-02-14 International Business Machines Corporation Amorphous oxide release layers for imprint lithography, and method of use
US8029716B2 (en) * 2008-02-01 2011-10-04 International Business Machines Corporation Amorphous nitride release layers for imprint lithography, and method of use
US20090212012A1 (en) * 2008-02-27 2009-08-27 Molecular Imprints, Inc. Critical dimension control during template formation
JP5453616B2 (ja) 2010-04-16 2014-03-26 Ｈｏｙａ株式会社 インプリント用モールドの製造方法
US9586811B2 (en) 2011-06-10 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with moving members and methods for making the same
US8906583B2 (en) * 2012-12-20 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked mask
JP5619939B2 (ja) * 2013-03-01 2014-11-05 株式会社日立ハイテクノロジーズ パターン転写方法
JP5626613B2 (ja) * 2013-12-12 2014-11-19 Hoya株式会社 インプリントモールド用マスクブランク
CN106415222B (zh) 2014-04-03 2018-06-08 台湾超微光学股份有限公司 光谱仪、光谱仪的波导片的制造方法及其结构
KR102329363B1 (ko) * 2015-04-20 2021-11-19 보드 오브 레젼츠, 더 유니버시티 오브 텍사스 시스템 대면적 다단 나노구조의 제조
JP6638493B2 (ja) * 2016-03-17 2020-01-29 大日本印刷株式会社 多段構造体を有するテンプレートの製造方法
KR102336560B1 (ko) * 2016-05-25 2021-12-08 다이니폰 인사츠 가부시키가이샤 템플릿 및 템플릿 블랭크, 그리고 임프린트용 템플릿 기판의 제조 방법, 임프린트용 템플릿의 제조 방법 및 템플릿
JP6802969B2 (ja) * 2016-09-21 2020-12-23 大日本印刷株式会社 テンプレートの製造方法、及び、テンプレート
US10606170B2 (en) 2017-09-14 2020-03-31 Canon Kabushiki Kaisha Template for imprint lithography and methods of making and using the same
WO2019083247A1 (ko) * 2017-10-24 2019-05-02 주식회사 엘지화학 회절 도광판 및 회절 도광판의 제조 방법

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