JP2007522673A5 - - Google Patents

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Publication number
JP2007522673A5
JP2007522673A5 JP2006553127A JP2006553127A JP2007522673A5 JP 2007522673 A5 JP2007522673 A5 JP 2007522673A5 JP 2006553127 A JP2006553127 A JP 2006553127A JP 2006553127 A JP2006553127 A JP 2006553127A JP 2007522673 A5 JP2007522673 A5 JP 2007522673A5
Authority
JP
Japan
Prior art keywords
photoresist layer
layer
patterned
patterned photoresist
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006553127A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007522673A (ja
Filing date
Publication date
Priority claimed from US10/779,007 external-priority patent/US7157377B2/en
Application filed filed Critical
Publication of JP2007522673A publication Critical patent/JP2007522673A/ja
Publication of JP2007522673A5 publication Critical patent/JP2007522673A5/ja
Pending legal-status Critical Current

Links

JP2006553127A 2004-02-13 2005-01-12 処理済みフォトレジストを使用して半導体素子を形成する方法 Pending JP2007522673A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/779,007 US7157377B2 (en) 2004-02-13 2004-02-13 Method of making a semiconductor device using treated photoresist
PCT/US2005/000961 WO2005082122A2 (en) 2004-02-13 2005-01-12 Method of making a semiconductor device using treated photoresist

Publications (2)

Publication Number Publication Date
JP2007522673A JP2007522673A (ja) 2007-08-09
JP2007522673A5 true JP2007522673A5 (enExample) 2008-03-06

Family

ID=34838285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006553127A Pending JP2007522673A (ja) 2004-02-13 2005-01-12 処理済みフォトレジストを使用して半導体素子を形成する方法

Country Status (6)

Country Link
US (2) US7157377B2 (enExample)
EP (1) EP1719162B8 (enExample)
JP (1) JP2007522673A (enExample)
KR (1) KR101128260B1 (enExample)
CN (1) CN100487873C (enExample)
WO (1) WO2005082122A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050026084A1 (en) * 2003-07-31 2005-02-03 Garza Cesar M. Semiconductor device and method for elimination of resist linewidth slimming by fluorination
US8057143B2 (en) * 2004-10-05 2011-11-15 Fontaine Trailer Company, Inc. Trailer load securement system
US7435354B2 (en) * 2005-01-06 2008-10-14 United Microelectronic Corp. Treatment method for surface of photoresist layer and method for forming patterned photoresist layer
US8915684B2 (en) 2005-09-27 2014-12-23 Fontaine Trailer Company, Inc. Cargo deck
JP2007311508A (ja) * 2006-05-17 2007-11-29 Nikon Corp 微細パターン形成方法及びデバイス製造方法
US7703826B1 (en) * 2006-09-08 2010-04-27 German Mark K Bed liner rail system for cargo holddown
JP4638550B2 (ja) * 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
CN102573329B (zh) * 2010-12-08 2014-04-02 北大方正集团有限公司 制作电路板导电柱的方法、系统以及电路板
WO2012173698A1 (en) * 2011-06-15 2012-12-20 Applied Materials, Inc. Methods and apparatus for controlling photoresist line width roughness with enhanced electron spin control
US8647817B2 (en) * 2012-01-03 2014-02-11 Tokyo Electron Limited Vapor treatment process for pattern smoothing and inline critical dimension slimming
JP2015115599A (ja) * 2013-12-13 2015-06-22 株式会社東芝 パターン形成方法
EP3719576A1 (en) * 2019-04-04 2020-10-07 IMEC vzw Resistless pattering mask
DE102020206696A1 (de) 2020-05-28 2021-12-02 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Steuergerät zum Herstellen eines Trägerelements zum Aufnehmen einer Probenflüssigkeit, Trägerelement, Trägermodul und Verfahren zum Verwenden eines Trägerelements

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
US5332653A (en) * 1992-07-01 1994-07-26 Motorola, Inc. Process for forming a conductive region without photoresist-related reflective notching damage
JPH0669190A (ja) * 1992-08-21 1994-03-11 Fujitsu Ltd フッ素系樹脂膜の形成方法
US5912187A (en) * 1993-12-30 1999-06-15 Lucent Technologies Inc. Method of fabricating circuits
JPH0831720A (ja) * 1994-07-13 1996-02-02 Nkk Corp レジストマスクの形成方法
EP0911697A3 (en) * 1997-10-22 1999-09-15 Interuniversitair Microelektronica Centrum Vzw A fluorinated hard mask for micropatterning of polymers
JPH11251295A (ja) * 1998-02-27 1999-09-17 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2000214575A (ja) * 1999-01-26 2000-08-04 Sharp Corp クロムマスクの形成方法
US6506653B1 (en) * 2000-03-13 2003-01-14 International Business Machines Corporation Method using disposable and permanent films for diffusion and implant doping
US6815359B2 (en) * 2001-03-28 2004-11-09 Advanced Micro Devices, Inc. Process for improving the etch stability of ultra-thin photoresist
US6716571B2 (en) * 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
US6630288B2 (en) * 2001-03-28 2003-10-07 Advanced Micro Devices, Inc. Process for forming sub-lithographic photoresist features by modification of the photoresist surface
US6589709B1 (en) * 2001-03-28 2003-07-08 Advanced Micro Devices, Inc. Process for preventing deformation of patterned photoresist features
JP2002305181A (ja) * 2001-04-06 2002-10-18 Seiko Epson Corp 半導体装置の製造方法
JP4780264B2 (ja) * 2001-05-16 2011-09-28 信越化学工業株式会社 クロム系フォトマスクの形成方法
JP3725811B2 (ja) * 2001-10-11 2005-12-14 ローム株式会社 半導体装置の製造方法
US6790782B1 (en) * 2001-12-28 2004-09-14 Advanced Micro Devices, Inc. Process for fabrication of a transistor gate including high-K gate dielectric with in-situ resist trim, gate etch, and high-K dielectric removal
US6716570B2 (en) * 2002-05-23 2004-04-06 Institute Of Microelectronics Low temperature resist trimming process
US6979408B2 (en) * 2002-12-30 2005-12-27 Intel Corporation Method and apparatus for photomask fabrication
US20050026084A1 (en) * 2003-07-31 2005-02-03 Garza Cesar M. Semiconductor device and method for elimination of resist linewidth slimming by fluorination
US6849515B1 (en) * 2003-09-25 2005-02-01 Freescale Semiconductor, Inc. Semiconductor process for disposable sidewall spacers

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