JP2006072326A5 - - Google Patents

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Publication number
JP2006072326A5
JP2006072326A5 JP2005193666A JP2005193666A JP2006072326A5 JP 2006072326 A5 JP2006072326 A5 JP 2006072326A5 JP 2005193666 A JP2005193666 A JP 2005193666A JP 2005193666 A JP2005193666 A JP 2005193666A JP 2006072326 A5 JP2006072326 A5 JP 2006072326A5
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JP
Japan
Prior art keywords
deposition
coated
layer
top coat
resist
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JP2005193666A
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English (en)
Japanese (ja)
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JP2006072326A (ja
JP4989047B2 (ja
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Publication of JP2006072326A publication Critical patent/JP2006072326A/ja
Publication of JP2006072326A5 publication Critical patent/JP2006072326A5/ja
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Publication of JP4989047B2 publication Critical patent/JP4989047B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005193666A 2004-07-02 2005-07-01 浸漬リソグラフィ用の組成物及びプロセス Expired - Fee Related JP4989047B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58511904P 2004-07-02 2004-07-02
US60/585119 2004-07-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011014240A Division JP5216877B2 (ja) 2004-07-02 2011-01-26 浸漬リソグラフィ用の組成物及びプロセス

Publications (3)

Publication Number Publication Date
JP2006072326A JP2006072326A (ja) 2006-03-16
JP2006072326A5 true JP2006072326A5 (enExample) 2012-02-23
JP4989047B2 JP4989047B2 (ja) 2012-08-01

Family

ID=34941803

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2005193666A Expired - Fee Related JP4989047B2 (ja) 2004-07-02 2005-07-01 浸漬リソグラフィ用の組成物及びプロセス
JP2011014240A Expired - Fee Related JP5216877B2 (ja) 2004-07-02 2011-01-26 浸漬リソグラフィ用の組成物及びプロセス
JP2012246567A Expired - Fee Related JP5576923B2 (ja) 2004-07-02 2012-11-08 浸漬リソグラフィ用の組成物及びプロセス

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2011014240A Expired - Fee Related JP5216877B2 (ja) 2004-07-02 2011-01-26 浸漬リソグラフィ用の組成物及びプロセス
JP2012246567A Expired - Fee Related JP5576923B2 (ja) 2004-07-02 2012-11-08 浸漬リソグラフィ用の組成物及びプロセス

Country Status (6)

Country Link
US (2) US7781141B2 (enExample)
EP (1) EP1612604A3 (enExample)
JP (3) JP4989047B2 (enExample)
KR (2) KR101203218B1 (enExample)
CN (2) CN101788763B (enExample)
TW (1) TWI322334B (enExample)

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JP4558064B2 (ja) 2007-05-15 2010-10-06 富士フイルム株式会社 パターン形成方法
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
EP2157477B1 (en) 2007-06-12 2014-08-06 FUJIFILM Corporation Use of a resist composition for negative working-type development, and method for pattern formation using the resist composition
JP4590431B2 (ja) * 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
JP4617337B2 (ja) 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
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JP5045314B2 (ja) 2007-08-30 2012-10-10 富士通株式会社 液浸露光用レジスト組成物、及びそれを用いた半導体装置の製造方法
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US9529265B2 (en) * 2014-05-05 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of preparing and using photosensitive material
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JP7172975B2 (ja) * 2019-01-16 2022-11-16 信越化学工業株式会社 新規オニウム塩、化学増幅レジスト組成物、及びパターン形成方法
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KR100618909B1 (ko) * 2005-08-26 2006-09-01 삼성전자주식회사 실리콘을 함유하는 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
EP1806621A1 (en) * 2006-01-08 2007-07-11 Rohm and Haas Electronic Materials LLC Coating compositions for photoresists
KR101332227B1 (ko) * 2006-11-29 2013-11-22 주식회사 동진쎄미켐 유기 반사방지막 형성용 단량체, 중합체 및 이를 포함하는유기 조성물

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