CN1662852B - 多层光刻模板 - Google Patents

多层光刻模板 Download PDF

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Publication number
CN1662852B
CN1662852B CN038141620A CN03814162A CN1662852B CN 1662852 B CN1662852 B CN 1662852B CN 038141620 A CN038141620 A CN 038141620A CN 03814162 A CN03814162 A CN 03814162A CN 1662852 B CN1662852 B CN 1662852B
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CN
China
Prior art keywords
layer
patterning
template
patterned layer
etch stop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN038141620A
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English (en)
Chinese (zh)
Other versions
CN1662852A (zh
Inventor
戴维·P.·曼斯尼
道格拉斯·J.·瑞斯尼克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
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Publication date
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Publication of CN1662852A publication Critical patent/CN1662852A/zh
Application granted granted Critical
Publication of CN1662852B publication Critical patent/CN1662852B/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
CN038141620A 2002-06-18 2003-06-03 多层光刻模板 Expired - Fee Related CN1662852B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/174,464 US6852454B2 (en) 2002-06-18 2002-06-18 Multi-tiered lithographic template and method of formation and use
US10/174,464 2002-06-18
PCT/US2003/017549 WO2003107094A1 (en) 2002-06-18 2003-06-03 Multi-tiered lithographic template

Publications (2)

Publication Number Publication Date
CN1662852A CN1662852A (zh) 2005-08-31
CN1662852B true CN1662852B (zh) 2010-10-27

Family

ID=29733600

Family Applications (1)

Application Number Title Priority Date Filing Date
CN038141620A Expired - Fee Related CN1662852B (zh) 2002-06-18 2003-06-03 多层光刻模板

Country Status (6)

Country Link
US (1) US6852454B2 (enExample)
JP (1) JP4575154B2 (enExample)
KR (1) KR101018519B1 (enExample)
CN (1) CN1662852B (enExample)
AU (1) AU2003243384A1 (enExample)
WO (1) WO2003107094A1 (enExample)

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JP4740518B2 (ja) * 2000-07-17 2011-08-03 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 転写リソグラフィ・プロセスのための自動液体ディスペンス方法およびシステム
US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20080160129A1 (en) 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US7179079B2 (en) * 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US20040224261A1 (en) * 2003-05-08 2004-11-11 Resnick Douglas J. Unitary dual damascene process using imprint lithography
US20050018296A1 (en) * 2003-07-24 2005-01-27 Asml Holding Nv Diffractive optical element and method of making same
JP2007505747A (ja) * 2003-09-17 2007-03-15 ナノコムス・パテンツ・リミテッド マイクロ構造デバイス及びその製造方法
US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7939131B2 (en) 2004-08-16 2011-05-10 Molecular Imprints, Inc. Method to provide a layer with uniform etch characteristics
US7161730B2 (en) * 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
CN100395121C (zh) * 2004-11-19 2008-06-18 鸿富锦精密工业（深圳）有限公司 热压印方法
TWI307419B (en) * 2004-12-27 2009-03-11 Au Optronics Corp Method of preparing reflective substrate and liquid crystal display device comprising the reflective substrate preparing by the same
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
JP2009523312A (ja) * 2005-09-07 2009-06-18 トッパン、フォウタマスクス、インク デュアル・ダマシン構造を製造するためのフォトマスクおよびその形成方法
JP4889316B2 (ja) * 2005-09-12 2012-03-07 学校法人東京理科大学 ３次元構造物の製造方法、３次元構造物、光学素子、ステンシルマスク、微細加工物の製造方法、及び微細パターン成形品の製造方法。
US20100215909A1 (en) * 2005-09-15 2010-08-26 Macdonald Susan S Photomask for the Fabrication of a Dual Damascene Structure and Method for Forming the Same
US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US20070148558A1 (en) * 2005-12-27 2007-06-28 Shahzad Akbar Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto
JP2007266193A (ja) * 2006-03-28 2007-10-11 Dainippon Printing Co Ltd インプリント用の型部材とその作製方法、およびこれらに用いられる積層基板
DE102006030267B4 (de) * 2006-06-30 2009-04-16 Advanced Micro Devices, Inc., Sunnyvale Nano-Einprägetechnik mit erhöhter Flexibilität in Bezug auf die Justierung und die Formung von Strukturelementen
WO2008097278A2 (en) * 2006-09-19 2008-08-14 Molecular Imprints, Inc. Etch-enhanced technique for lift-off patterning
JP5009649B2 (ja) 2007-02-28 2012-08-22 Ｈｏｙａ株式会社 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法
US8142702B2 (en) * 2007-06-18 2012-03-27 Molecular Imprints, Inc. Solvent-assisted layer formation for imprint lithography
US8753974B2 (en) * 2007-06-20 2014-06-17 Micron Technology, Inc. Charge dissipation of cavities
WO2009036215A2 (en) * 2007-09-14 2009-03-19 Qualcomm Mems Technologies, Inc. Etching processes used in mems production
JP5161017B2 (ja) 2007-09-27 2013-03-13 Ｈｏｙａ株式会社 マスクブランク、マスクブランクの製造方法、及びインプリント用モールドの製造方法
DE102007048807A1 (de) 2007-10-10 2009-04-16 Micronas Gmbh Brennstoffzelle und Verfahren zum Herstellen einer Brennstoffzelle
US7836420B2 (en) * 2007-10-22 2010-11-16 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system with assist feature
TWI493598B (zh) * 2007-10-26 2015-07-21 Applied Materials Inc 利用光阻模板遮罩的倍頻方法
JP5343345B2 (ja) * 2007-10-31 2013-11-13 凸版印刷株式会社 パターン形成方法、インプリントモールド、フォトマスク
US7906274B2 (en) * 2007-11-21 2011-03-15 Molecular Imprints, Inc. Method of creating a template employing a lift-off process
US8114331B2 (en) 2008-01-02 2012-02-14 International Business Machines Corporation Amorphous oxide release layers for imprint lithography, and method of use
US8029716B2 (en) * 2008-02-01 2011-10-04 International Business Machines Corporation Amorphous nitride release layers for imprint lithography, and method of use
US20090212012A1 (en) * 2008-02-27 2009-08-27 Molecular Imprints, Inc. Critical dimension control during template formation
JP5453616B2 (ja) 2010-04-16 2014-03-26 Ｈｏｙａ株式会社 インプリント用モールドの製造方法
US9586811B2 (en) 2011-06-10 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with moving members and methods for making the same
US8906583B2 (en) * 2012-12-20 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked mask
JP5619939B2 (ja) * 2013-03-01 2014-11-05 株式会社日立ハイテクノロジーズ パターン転写方法
JP5626613B2 (ja) * 2013-12-12 2014-11-19 Hoya株式会社 インプリントモールド用マスクブランク
WO2015149331A1 (zh) 2014-04-03 2015-10-08 台湾超微光学股份有限公司 光谱仪、光谱仪的波导片的制造方法及其结构
WO2016172116A1 (en) * 2015-04-20 2016-10-27 Board Of Regents, The University Of Texas System Fabricating large area multi-tier nanostructures
JP6638493B2 (ja) * 2016-03-17 2020-01-29 大日本印刷株式会社 多段構造体を有するテンプレートの製造方法
CN117976523A (zh) * 2016-05-25 2024-05-03 大日本印刷株式会社 压印用模板基板的制造方法、压印用模板的制造方法、以及模板
JP6802969B2 (ja) * 2016-09-21 2020-12-23 大日本印刷株式会社 テンプレートの製造方法、及び、テンプレート
US10606170B2 (en) 2017-09-14 2020-03-31 Canon Kabushiki Kaisha Template for imprint lithography and methods of making and using the same
CN111065942B (zh) * 2017-10-24 2022-01-07 株式会社Lg化学 衍射导光板和制造衍射导光板的方法

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US4124473A (en) * 1977-06-17 1978-11-07 Rca Corporation Fabrication of multi-level relief patterns in a substrate
US4591547A (en) * 1982-10-20 1986-05-27 General Instrument Corporation Dual layer positive photoresist process and devices
US5126006A (en) * 1990-10-30 1992-06-30 International Business Machines Corp. Plural level chip masking
DE4432725C1 (de) * 1994-09-14 1996-01-11 Fraunhofer Ges Forschung Verfahren zur Herstellung eines dreidimensionalen Bauteils oder einer Bauteilgruppe
JPH09236932A (ja) 1997-03-10 1997-09-09 Agency Of Ind Science & Technol 微細パターン形成方法
US5667940A (en) * 1994-05-11 1997-09-16 United Microelectronics Corporation Process for creating high density integrated circuits utilizing double coating photoresist mask
US6013417A (en) * 1998-04-02 2000-01-11 International Business Machines Corporation Process for fabricating circuitry on substrates having plated through-holes
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use

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US6653030B2 (en) * 2002-01-23 2003-11-25 Hewlett-Packard Development Company, L.P. Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features
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US7063919B2 (en) * 2002-07-31 2006-06-20 Mancini David P Lithographic template having a repaired gap defect method of repair and use
US7083880B2 (en) * 2002-08-15 2006-08-01 Freescale Semiconductor, Inc. Lithographic template and method of formation and use

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4124473A (en) * 1977-06-17 1978-11-07 Rca Corporation Fabrication of multi-level relief patterns in a substrate
US4591547A (en) * 1982-10-20 1986-05-27 General Instrument Corporation Dual layer positive photoresist process and devices
US5126006A (en) * 1990-10-30 1992-06-30 International Business Machines Corp. Plural level chip masking
US5667940A (en) * 1994-05-11 1997-09-16 United Microelectronics Corporation Process for creating high density integrated circuits utilizing double coating photoresist mask
DE4432725C1 (de) * 1994-09-14 1996-01-11 Fraunhofer Ges Forschung Verfahren zur Herstellung eines dreidimensionalen Bauteils oder einer Bauteilgruppe
JPH09236932A (ja) 1997-03-10 1997-09-09 Agency Of Ind Science & Technol 微細パターン形成方法
US6013417A (en) * 1998-04-02 2000-01-11 International Business Machines Corporation Process for fabricating circuitry on substrates having plated through-holes
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use

Also Published As

Publication number Publication date
KR20050021980A (ko) 2005-03-07
US20030232252A1 (en) 2003-12-18
WO2003107094A1 (en) 2003-12-24
JP4575154B2 (ja) 2010-11-04
AU2003243384A1 (en) 2003-12-31
JP2005530338A (ja) 2005-10-06
CN1662852A (zh) 2005-08-31
US6852454B2 (en) 2005-02-08
KR101018519B1 (ko) 2011-03-03

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Granted publication date: 20101027

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CF01 Termination of patent right due to non-payment of annual fee