AU2003243384A1 - Multi-tiered lithographic template - Google Patents

Multi-tiered lithographic template

Info

Publication number
AU2003243384A1
AU2003243384A1 AU2003243384A AU2003243384A AU2003243384A1 AU 2003243384 A1 AU2003243384 A1 AU 2003243384A1 AU 2003243384 A AU2003243384 A AU 2003243384A AU 2003243384 A AU2003243384 A AU 2003243384A AU 2003243384 A1 AU2003243384 A1 AU 2003243384A1
Authority
AU
Australia
Prior art keywords
lithographic template
tiered lithographic
tiered
template
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003243384A
Other languages
English (en)
Inventor
David P. Mancini
Douglas J. Resnick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003243384A1 publication Critical patent/AU2003243384A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
AU2003243384A 2002-06-18 2003-06-03 Multi-tiered lithographic template Abandoned AU2003243384A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/174,464 2002-06-18
US10/174,464 US6852454B2 (en) 2002-06-18 2002-06-18 Multi-tiered lithographic template and method of formation and use
PCT/US2003/017549 WO2003107094A1 (en) 2002-06-18 2003-06-03 Multi-tiered lithographic template

Publications (1)

Publication Number Publication Date
AU2003243384A1 true AU2003243384A1 (en) 2003-12-31

Family

ID=29733600

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003243384A Abandoned AU2003243384A1 (en) 2002-06-18 2003-06-03 Multi-tiered lithographic template

Country Status (6)

Country Link
US (1) US6852454B2 (enExample)
JP (1) JP4575154B2 (enExample)
KR (1) KR101018519B1 (enExample)
CN (1) CN1662852B (enExample)
AU (1) AU2003243384A1 (enExample)
WO (1) WO2003107094A1 (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002006902A2 (en) * 2000-07-17 2002-01-24 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20080160129A1 (en) * 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US7179079B2 (en) * 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US20040224261A1 (en) * 2003-05-08 2004-11-11 Resnick Douglas J. Unitary dual damascene process using imprint lithography
US20050018296A1 (en) * 2003-07-24 2005-01-27 Asml Holding Nv Diffractive optical element and method of making same
JP2007505747A (ja) * 2003-09-17 2007-03-15 ナノコムス・パテンツ・リミテッド マイクロ構造デバイス及びその製造方法
US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7939131B2 (en) 2004-08-16 2011-05-10 Molecular Imprints, Inc. Method to provide a layer with uniform etch characteristics
US7161730B2 (en) * 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
CN100395121C (zh) * 2004-11-19 2008-06-18 鸿富锦精密工业（深圳）有限公司 热压印方法
TWI307419B (en) * 2004-12-27 2009-03-11 Au Optronics Corp Method of preparing reflective substrate and liquid crystal display device comprising the reflective substrate preparing by the same
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
WO2007030527A2 (en) * 2005-09-07 2007-03-15 Toppan Photomasks, Inc. Photomask for the fabrication of a dual damascene structure and method for forming the same
JP4889316B2 (ja) * 2005-09-12 2012-03-07 学校法人東京理科大学 ３次元構造物の製造方法、３次元構造物、光学素子、ステンシルマスク、微細加工物の製造方法、及び微細パターン成形品の製造方法。
US20100215909A1 (en) * 2005-09-15 2010-08-26 Macdonald Susan S Photomask for the Fabrication of a Dual Damascene Structure and Method for Forming the Same
US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US20070148558A1 (en) * 2005-12-27 2007-06-28 Shahzad Akbar Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto
JP2007266193A (ja) * 2006-03-28 2007-10-11 Dainippon Printing Co Ltd インプリント用の型部材とその作製方法、およびこれらに用いられる積層基板
DE102006030267B4 (de) * 2006-06-30 2009-04-16 Advanced Micro Devices, Inc., Sunnyvale Nano-Einprägetechnik mit erhöhter Flexibilität in Bezug auf die Justierung und die Formung von Strukturelementen
US7985530B2 (en) * 2006-09-19 2011-07-26 Molecular Imprints, Inc. Etch-enhanced technique for lift-off patterning
JP5009649B2 (ja) 2007-02-28 2012-08-22 Ｈｏｙａ株式会社 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法
US8142702B2 (en) * 2007-06-18 2012-03-27 Molecular Imprints, Inc. Solvent-assisted layer formation for imprint lithography
US8753974B2 (en) * 2007-06-20 2014-06-17 Micron Technology, Inc. Charge dissipation of cavities
KR20100061731A (ko) 2007-09-14 2010-06-08 퀄컴 엠이엠스 테크놀로지스, 인크. Ｍｅｍｓ 제조에 이용되는 에칭 방법
JP5161017B2 (ja) 2007-09-27 2013-03-13 Ｈｏｙａ株式会社 マスクブランク、マスクブランクの製造方法、及びインプリント用モールドの製造方法
DE102007048807A1 (de) * 2007-10-10 2009-04-16 Micronas Gmbh Brennstoffzelle und Verfahren zum Herstellen einer Brennstoffzelle
US7836420B2 (en) * 2007-10-22 2010-11-16 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system with assist feature
US8357618B2 (en) * 2007-10-26 2013-01-22 Applied Materials, Inc. Frequency doubling using a photo-resist template mask
JP5343345B2 (ja) * 2007-10-31 2013-11-13 凸版印刷株式会社 パターン形成方法、インプリントモールド、フォトマスク
US7906274B2 (en) * 2007-11-21 2011-03-15 Molecular Imprints, Inc. Method of creating a template employing a lift-off process
US8114331B2 (en) 2008-01-02 2012-02-14 International Business Machines Corporation Amorphous oxide release layers for imprint lithography, and method of use
US8029716B2 (en) * 2008-02-01 2011-10-04 International Business Machines Corporation Amorphous nitride release layers for imprint lithography, and method of use
US20090212012A1 (en) * 2008-02-27 2009-08-27 Molecular Imprints, Inc. Critical dimension control during template formation
JP5453616B2 (ja) * 2010-04-16 2014-03-26 Ｈｏｙａ株式会社 インプリント用モールドの製造方法
US9586811B2 (en) * 2011-06-10 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with moving members and methods for making the same
US8906583B2 (en) * 2012-12-20 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked mask
JP5619939B2 (ja) * 2013-03-01 2014-11-05 株式会社日立ハイテクノロジーズ パターン転写方法
JP5626613B2 (ja) * 2013-12-12 2014-11-19 Hoya株式会社 インプリントモールド用マスクブランク
US10145739B2 (en) 2014-04-03 2018-12-04 Oto Photonics Inc. Waveguide sheet, fabrication method thereof and spectrometer using the same
WO2016172116A1 (en) * 2015-04-20 2016-10-27 Board Of Regents, The University Of Texas System Fabricating large area multi-tier nanostructures
JP6638493B2 (ja) * 2016-03-17 2020-01-29 大日本印刷株式会社 多段構造体を有するテンプレートの製造方法
KR102336560B1 (ko) * 2016-05-25 2021-12-08 다이니폰 인사츠 가부시키가이샤 템플릿 및 템플릿 블랭크, 그리고 임프린트용 템플릿 기판의 제조 방법, 임프린트용 템플릿의 제조 방법 및 템플릿
JP6802969B2 (ja) * 2016-09-21 2020-12-23 大日本印刷株式会社 テンプレートの製造方法、及び、テンプレート
US10606170B2 (en) 2017-09-14 2020-03-31 Canon Kabushiki Kaisha Template for imprint lithography and methods of making and using the same
KR102068138B1 (ko) * 2017-10-24 2020-01-20 주식회사 엘지화학 회절 도광판 및 회절 도광판의 제조 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4124473A (en) 1977-06-17 1978-11-07 Rca Corporation Fabrication of multi-level relief patterns in a substrate
JPS57130430A (en) 1981-02-06 1982-08-12 Nippon Telegr & Teleph Corp <Ntt> Pattern formation
US4591547A (en) 1982-10-20 1986-05-27 General Instrument Corporation Dual layer positive photoresist process and devices
US5126006A (en) 1990-10-30 1992-06-30 International Business Machines Corp. Plural level chip masking
US5667940A (en) 1994-05-11 1997-09-16 United Microelectronics Corporation Process for creating high density integrated circuits utilizing double coating photoresist mask
DE4432725C1 (de) 1994-09-14 1996-01-11 Fraunhofer Ges Forschung Verfahren zur Herstellung eines dreidimensionalen Bauteils oder einer Bauteilgruppe
JPH09236932A (ja) 1997-03-10 1997-09-09 Agency Of Ind Science & Technol 微細パターン形成方法
US6013417A (en) 1998-04-02 2000-01-11 International Business Machines Corporation Process for fabricating circuitry on substrates having plated through-holes
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US6653030B2 (en) * 2002-01-23 2003-11-25 Hewlett-Packard Development Company, L.P. Optical-mechanical feature fabrication during manufacture of semiconductors and other micro-devices and nano-devices that include micron and sub-micron features
US6737202B2 (en) * 2002-02-22 2004-05-18 Motorola, Inc. Method of fabricating a tiered structure using a multi-layered resist stack and use
US7063919B2 (en) * 2002-07-31 2006-06-20 Mancini David P Lithographic template having a repaired gap defect method of repair and use
US7083880B2 (en) * 2002-08-15 2006-08-01 Freescale Semiconductor, Inc. Lithographic template and method of formation and use

Also Published As

Publication number Publication date
JP4575154B2 (ja) 2010-11-04
CN1662852B (zh) 2010-10-27
WO2003107094A1 (en) 2003-12-24
CN1662852A (zh) 2005-08-31
JP2005530338A (ja) 2005-10-06
US20030232252A1 (en) 2003-12-18
KR20050021980A (ko) 2005-03-07
KR101018519B1 (ko) 2011-03-03
US6852454B2 (en) 2005-02-08

Similar Documents

Publication Publication Date Title
AU2003243384A1 (en) Multi-tiered lithographic template
AU2002359600A1 (en) Lithographic template
AU2002303068A1 (en) Reversal imprint technique
AU2002335152A1 (en) Robot-phone
AU2003271134A1 (en) Sputum-collecting tool
WO2004023359A8 (en) Defined contribution benefits tool
AU2003209021A1 (en) Slot die
AU2003278355A1 (en) Process
AU2002368194A1 (en) Tool
AU2003903349A0 (en) Template system
AU2002952559A0 (en) New use
AU2002318053A1 (en) Suplier
AU2003263197A1 (en) Process
AU2003212130A1 (en) Can
AU2003205935A1 (en) Forming means
AU2002951890A0 (en) Doorway template
AU2002100186A4 (en) Fonepark advanced
AU2002245525A1 (en) Lithographic template
AU2002245322A1 (en) Lithographic template
AU2002100956A4 (en) Curved Skatedeck
AU2002100298A4 (en) The sharefarmer exchange
AU2002100739A4 (en) Neuramax
AU2002100747A4 (en) Powersell
AU2002100957A4 (en) Sluggit
AU2002100160A4 (en) Oxidirator

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase